Материал: 2N3903RE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3903/D
General Purpose Transistors
NPN Silicon
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COLLECTOR |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Unit |
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Collector± Emitter Voltage |
VCEO |
40 |
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Vdc |
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Collector± Base Voltage |
VCBO |
60 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
6.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
200 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS* |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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*Indicates Data in addition to JEDEC Requirements.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N3903
2N3904*
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector± Emitter Breakdown Voltage (1) |
V |
40 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
(BR)CEO |
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Collector± Base Breakdown Voltage |
V(BR)CBO |
60 |
Ð |
Vdc |
(IC = 10 mAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
6.0 |
Ð |
Vdc |
(IE = 10 mAdc, IC = 0) |
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Base Cutoff Current |
IBL |
Ð |
50 |
nAdc |
(VCE = 30 Vdc, VEB = 3.0 Vdc) |
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Collector Cutoff Current |
ICEX |
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50 |
nAdc |
(VCE = 30 Vdc, VEB = 3.0 Vdc) |
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1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. |
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Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1996
2N3903 |
2N3904 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain(1) |
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hFE |
20 |
Ð |
Ð |
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(IC = 0.1 mAdc, VCE = 1.0 Vdc) |
2N3903 |
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2N3904 |
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40 |
Ð |
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(IC = 1.0 mAdc, VCE = 1.0 Vdc) |
2N3903 |
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35 |
Ð |
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2N3904 |
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70 |
Ð |
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(IC = 10 mAdc, VCE = 1.0 Vdc) |
2N3903 |
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50 |
150 |
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2N3904 |
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100 |
300 |
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(IC = 50 mAdc, VCE = 1.0 Vdc) |
2N3903 |
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30 |
Ð |
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2N3904 |
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60 |
Ð |
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(IC = 100 mAdc, VCE = 1.0 Vdc) |
2N3903 |
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15 |
Ð |
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2N3904 |
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30 |
Ð |
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Collector± Emitter Saturation Voltage(1) |
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VCE(sat) |
Ð |
0.2 |
Vdc |
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(IC = 10 mAdc, IB = 1.0 mAdc) |
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(IC = 50 mAdc, IB = 5.0 mAdc |
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Ð |
0.3 |
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Base ± Emitter Saturation Voltage(1) |
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VBE(sat) |
0.65 |
0.85 |
Vdc |
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(IC = 10 mAdc, IB = 1.0 mAdc) |
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(IC = 50 mAdc, IB = 5.0 mAdc) |
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Ð |
0.95 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
250 |
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MHz |
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(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) |
2N3903 |
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2N3904 |
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300 |
Ð |
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Output Capacitance |
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Cobo |
Ð |
4.0 |
pF |
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(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
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Input Capacitance |
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Cibo |
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8.0 |
pF |
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(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
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Input Impedance |
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hie |
1.0 |
8.0 |
k Ω |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N3903 |
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2N3904 |
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1.0 |
10 |
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Voltage Feedback Ratio |
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hre |
0.1 |
5.0 |
X 10± 4 |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N3903 |
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2N3904 |
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0.5 |
8.0 |
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Small±Signal Current Gain |
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hfe |
50 |
200 |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N3903 |
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2N3904 |
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100 |
400 |
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Output Admittance |
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hoe |
1.0 |
40 |
mmhos |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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Noise Figure |
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NF |
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dB |
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(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz) |
2N3903 |
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6.0 |
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2N3904 |
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5.0 |
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SWITCHING CHARACTERISTICS |
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Delay Time |
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(VCC = 3.0 Vdc, VBE = 0.5 Vdc, |
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td |
Ð |
35 |
ns |
Rise Time |
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IC = 10 mAdc, IB1 = 1.0 mAdc) |
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tr |
Ð |
35 |
ns |
Storage Time |
(VCC = 3.0 Vdc, IC = 10 mAdc, |
2N3903 |
ts |
Ð |
175 |
ns |
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IB1 = IB2 = 1.0 mAdc) |
2N3904 |
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200 |
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Fall Time |
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tf |
Ð |
50 |
ns |
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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2N3903 |
2N3904 |
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+3 V |
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10 < t1 < 500 ms |
t1 |
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+3 V |
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DUTY CYCLE = 2% |
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+10.9 V |
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300 ns |
+10.9 V |
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DUTY CYCLE = 2% |
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275 |
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275 |
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10 k |
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0 |
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10 k |
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± 0.5 V |
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CS < 4 pF* |
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CS < 4 pF* |
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< 1 ns |
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1N916 |
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± 9.1 V′ |
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< 1 ns |
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* Total shunt capacitance of test jig and connectors |
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Figure 1. Delay and Rise Time |
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Figure 2. Storage and Fall Time |
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Equivalent Test Circuit |
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Equivalent Test Circuit |
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TYPICAL TRANSIENT CHARACTERISTICS
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7.0 |
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(pF) |
5.0 |
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CAPACITANCE |
3.0 |
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Cibo |
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2.0 |
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Cobo |
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1.0 |
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30 |
40 |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 7.0 10 |
20 |
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REVERSE BIAS VOLTAGE (VOLTS) |
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Figure 3. Capacitance
TJ = 25°C |
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TJ = 125°C |
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5000 |
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3000 |
VCC = 40 V |
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IC/IB = 10 |
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2000 |
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(pC) |
1000 |
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Q, CHARGE |
700 |
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500 |
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300 |
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QT |
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200 |
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100 |
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QA |
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70 |
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50 |
2.0 |
3.0 |
5.0 7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
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1.0 |
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IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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2N3903 |
2N3904 |
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500 |
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500 |
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300 |
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IC/IB = 10 |
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300 |
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200 |
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(ns) |
100 |
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70 |
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tr @ VCC = 3.0 V |
70 |
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TIME (ns) |
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RISE TIME |
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50 |
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50 |
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30 |
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40 V |
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20 |
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20 |
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t |
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15 V |
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2.0 V |
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td @ VOB = 0 V |
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5 |
2.0 |
3.0 |
5.0 7.0 10 |
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30 |
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70 |
100 |
200 |
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1.0 |
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IC, COLLECTOR CURRENT (mA) |
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VCC = 40 V |
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IC/IB = 10 |
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1.0 |
2.0 |
3.0 |
5.0 |
7.0 10 |
20 |
30 |
50 |
70 |
100 |
200 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 5. Turn ± On Time |
Figure 6. Rise Time |
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500 |
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t′ = t |
± 1/ |
t |
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300 |
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s |
s |
8 |
f |
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IC/IB = 20 |
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IC/IB = 10 |
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IB1 = IB2 |
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200 |
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(ns) |
100 |
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TIME |
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70 |
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IC/IB = 20 |
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50 |
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STORAGE |
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30 |
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IC/IB = 10 |
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20 |
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s′, |
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t |
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10 |
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5 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 10 |
20 |
30 |
50 |
70 |
100 |
200 |
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IC, COLLECTOR CURRENT (mA) |
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500 |
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300 |
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VCC = 40 V |
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200 |
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IB1 = IB2 |
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IC/IB = 20 |
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(ns) |
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100 |
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TIME |
70 |
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50 |
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, FALL |
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30 |
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IC/IB = 10 |
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f |
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t |
20 |
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10 |
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7 |
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5 |
2.0 |
3.0 |
5.0 |
7.0 10 |
20 |
30 |
50 |
70 |
100 |
200 |
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1.0 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 7. Storage Time |
Figure 8. Fall Time |
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TYPICAL AUDIO SMALL±SIGNAL CHARACTERISTICS |
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NOISE FIGURE VARIATIONS |
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(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) |
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12 |
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14 |
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SOURCE RESISTANCE = 200 W |
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f = 1.0 kHz |
IC = 1.0 mA |
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IC = 1.0 mA |
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(dB) |
8 |
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SOURCE RESISTANCE = 200 W |
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(dB) |
10 |
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IC = 0.5 mA |
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FIGURE |
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FIGURE |
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IC = 50 mA |
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IC = 0.5 mA |
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NOISE |
6 |
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SOURCE RESISTANCE = 1.0 k |
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NOISE |
6 |
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IC = 100 mA |
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IC = 50 mA |
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NF, |
4 |
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NF, |
4 |
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2 |
SOURCE RESISTANCE = 500 W |
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2 |
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0 |
IC = 100 mA |
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0.2 |
0.4 |
1.0 |
2.0 |
4.0 |
10 |
20 |
40 |
100 |
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0 |
0.2 |
0.4 |
1.0 |
2.0 |
4.0 |
10 |
20 |
40 |
100 |
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0.1 |
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0.1 |
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f, FREQUENCY (kHz) |
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RS, SOURCE RESISTANCE (k OHMS) |
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Figure 9. |
Figure 10. |
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
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300 |
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GAIN |
200 |
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, CURRENT |
100 |
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70 |
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fe |
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h |
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50 |
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30 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
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0.1 |
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
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100 |
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mhos) |
50 |
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m |
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( |
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ADMITTANCE |
20 |
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10 |
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, OUTPUT |
5 |
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oe |
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h |
2 |
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1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
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0.1 |
IC, COLLECTOR CURRENT (mA)
Figure 12. Output Admittance
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20 |
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(k OHMS) |
10 |
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5.0 |
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IMPEDANCE |
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2.0 |
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, INPUT |
1.0 |
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ie |
0.5 |
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h |
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0.2 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
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0.1 |
IC, COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
10±4 ) |
10 |
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7.0 |
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(X |
5.0 |
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RATIO |
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FEEDBACK |
3.0 |
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2.0 |
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, VOLTAGE |
1.0 |
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0.7 |
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re |
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h |
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0.5 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
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0.1 |
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
(NORMALIZED) |
2.0 |
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TJ = +125°C |
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V |
= 1.0 V |
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CE |
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1.0 |
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+25°C |
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0.7 |
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GAIN |
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0.5 |
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± 55°C |
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,DC CURRENT |
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0.3 |
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0.2 |
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FE |
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h |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
200 |
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0.1 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 15. DC Current Gain
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |