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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6487/D

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general±purpose amplifier and switching applications.

•DC Current Gain Specified to 15 Amperes Ð

hFE = 20±150 @ IC = 5.0 Adc hFE = 5.0 (Min) @ IC = 15 Adc

•Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 60 Vdc (Min) ± 2N6487, 2N6490

VCEO(sus) = 80 Vdc (Min) ± 2N6488, 2N6491

•High Current Gain Ð Bandwidth Product fT = 5.0 MHz (Min) @ IC = 1.0 Adc

•TO±220AB Compact Package

MAXIMUM RATINGS (1)

		2N6487		2N6488
Rating	Symbol	2N6490		2N6491	Unit

Collector±Emitter Voltage	VCEO	60		80	Vdc
Collector±Base Voltage	VCB	70		90	Vdc
Emitter±Base Voltage	VEB		5.0		Vdc
Collector Current Ð Continuous	IC		15		Adc
Base Current	IB		5.0		Adc
Total Power Dissipation @ TC = 25_C	PD		75		Watts
Derate above 25_C			0.6		W/_C

Total Power Dissipation @ TA = 25_C	PD		1.8		Watts
Derate above 25_C			0.014		W/_C

Operating and Storage Junction	TJ, Tstg	± 65 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	1.67	_C/W
Thermal Resistance, Junction to Ambient	RθJA	70	_C/W

(1) Indicates JEDEC Registered Data.

NPN

2N6487

2N6488*

PNP

2N6490

2N6491*

*Motorola Preferred Device

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 ± 80 VOLTS

75 WATTS

CASE 221A±06

TO±220AB

	TA	TC
	4.0	80
(WATTS)	3.0	60
(WATTS)
DISSIPATION						TC
	2.0	40
					TA
POWER	1.0	20
,
D
P
	0	0	20	40	60	80	100	120	140	160
		0	20	40	60	80	100	120	140	160
					TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

2N6487		2N6488	2N6490	2N6491
	*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

			Characteristic			Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)					VCEO(sus)			Vdc
	(IC = 200 mAdc, IB = 0)				2N6487, 2N6490		60	Ð
					2N6488, 2N6491		80

	Collector±Emitter Sustaining Voltage (1)					VCEX			Vdc
	(IC = 200 mAdc, VBE = 1.5 Vdc)				2N6487, 2N6490		70	Ð
					2N6488, 2N6491		90	Ð

	Collector Cutoff Current					ICEO			mAdc
	Collector Cutoff Current					ICEO			mAdc
	(VCE = 30 Vdc, IB = 0)				2N6487, 2N6490		Ð	1.0
	(VCE = 40 Vdc, IB = 0)				2N6488, 2N6491		Ð	1.0
	Collector Cutoff Current					ICEX			μAdc
	(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)				2N6487, 2N6490		Ð	500
	(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)				2N6488, 2N6491		Ð	500
	(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)				2N6487, 2N6490		Ð	5.0
	(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)				2N6488, 2N6491		Ð	5.0
	Emitter Cutoff Current					IEBO	Ð	1.0	mAdc
	(VBE = 5.0 Vdc, IC = 0)
	ON CHARACTERISTICS

	DC Current Gain					hFE			Ð
	(IC = 5.0 Adc, VCE = 4.0 Vdc)						20	150
	(IC = 15 Adc, VCE = 4.0 Vdc)						5.0	Ð
	Collector±Emitter Saturation Voltage					VCE(sat)			Vdc
	(IC = 5.0 Adc, IB = 0.5 Adc)						Ð	1.3
	(IC = 15 Adc, IB = 5.0 Adc)						Ð	3.5
	Base±Emitter On Voltage					VBE(on)			Vdc
	(IC = 5.0 Adc, VCE = 4.0 Vdc)						Ð	1.3
	(IC = 15 Adc, VCE = 4.0 Vdc)						Ð	3.5
	DYNAMIC CHARACTERISTICS

	Current±Gain Ð Bandwidth Product (2)					fT	5.0	Ð	MHz
	(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
	Small±Signal Current Gain					hfe	25	Ð	Ð
	(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

* Indicates JEDEC Registered Data.

(1)Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

(2)fT = |hfe| •ftest.

		VCC		1000
		+ 30 V		1000
25 μs		RC		500				tr
+ 10 V		RC
+ 10 V			SCOPE
			SCOPE	200
0		RB	(ns)	200
0		RB
	51	D1
± 10 V	51	D1	TIME	100
				100

tr, tf v 10 ns			t,	50	NPN			td @ VBE(off) [ 5.0 V
tr, tf v 10 ns				50	NPN			td @ VBE(off) [ 5.0 V
DUTY CYCLE = 1.0%		± 4 V			PNP
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.				20	TC = 25°C
FOR PNP, REVERSE ALL POLARITIES.				20	VCC = 30 V
FOR PNP, REVERSE ALL POLARITIES.					VCC = 30 V
D1 MUST BE FAST RECOVERY TYPE, e.g.:				10	IC/IB = 10
D1 MUST BE FAST RECOVERY TYPE, e.g.:				10	0.5		2.0		10
1N5825 USED ABOVE IB [ 100 mA				0.2	0.5	1.0	2.0	5.0	10	20
MSD6100 USED BELOW IB [ 100 mA						IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

										2N6487	2N6488		2N6490		2N6491
1.0
0.7	D = 0.5
0.5	D = 0.5
0.5
0.3	0.2
0.2	0.2
0.2
	0.1
0.1	0.05							ZθJC (t) = r(t) RθJC				P(pk)
0.07								ZθJC (t) = r(t) RθJC				P(pk)
								RθJC = 1.67°C/W MAX
								RθJC = 1.67°C/W MAX
0.05	0.02							D CURVES APPLY FOR POWER
	0.02							PULSE TRAIN SHOWN
0.03								PULSE TRAIN SHOWN				t1
0.03								READ TIME AT t1				t1	t2
0.02								READ TIME AT t1					t2
0.02	0.01	SINGLE PULSE						TJ(pk) ± TC = P(pk) ZθJC(t)				DUTY CYCLE, D = t1/t2
		SINGLE PULSE										DUTY CYCLE, D = t1/t2
0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k
0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k

t, TIME (ms)

Figure 4. Thermal Response

	20
(AMP)	10							100 μs
(AMP)	5.0							500 μs
CURRENT								500 μs

	2.0							1.0 ms
	2.0	TJ = 150°C

,COLLECTOR
	1.0			SECOND BREAKDOWN LIMITED				5.0 ms
	0.5			BONDING WIRE LIMITED
	0.5			THERMALLY LIMITED @ TC = 25°C
		CURVES APPLY BELOW RATED V
C		CURVES APPLY BELOW RATED V
I	0.2				CEO
	0.2				2N6487, 2N6490			dc
	0.1				2N6488, 2N6491
	0.1	2.0	4.0	10	20	40	60	80
		2.0	4.0	10	20	40	60	80
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

There are two limitations on the power handling ability of a transistors average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations imposed by second breakdown

Figure 5. Active±Region Safe Operating Area

	5000
			ts
(ns)	1000
(ns)
t, TIME	500	tf
t, TIME		NPN
	200	NPN
	200	PNP	VCC	= 30 V
		PNP

	100		IC/IB = 10
	100		IB1 = IB2
			IB1 = IB2
	50		TJ = 25°C
	50	0.5	1.0	2.0	5.0	10	20
	0.2	0.5	1.0	2.0	5.0	10	20

IC, COLLECTOR CURRENT (AMP)

Figure 6. Turn±Off Time

	1000
	700
(pF)				Cob
(pF)	300		Cib
C, CAPACITANCE	300		Cib
	200		Cob
	200
	100		NPN
	100

	70		PNP
	70	TJ = 25°C
	50	TJ = 25°C
	50	1.0	2.0	5.0	10	20	50
	0.5	1.0	2.0	5.0	10	20	50
			VR, REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitances

Motorola Bipolar Power Transistor Device Data

2N6487

2N6488

2N6490

2N6491

hFE, DC CURRENT GAIN

							NPN														PNP
					2N6487, 2N6488														2N6490, 2N6491
500													500
500													500

						TJ =	150	°C
200			25°	C		TJ =	150	°C				GAIN	200					TJ	= 150°	C
200			25°	C									200					TJ	= 150°	C

100													100			25°C
																25°C
												CURRENTDC,

															± 55°C
		± 55°		C											± 55°C
50													50


20												FE	20



10	VCE = 2.0 V											h	10
	VCE = 2.0 V

														VCE = 2.0 V
5.0													5.0



	0.5	1.0				2.0			5.0	10	20			0.5			1.0				2.0	5.0	10	20
0.2	0.5	1.0				2.0			5.0	10	20		0.2	0.5			1.0				2.0	5.0	10	20
			IC, COLLECTOR CURRENT (AMP)														IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

05.0

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.2

																			(VOLTS)	2.0
																TJ =	25°	C		2.0																	TJ =		25°	C
																TJ =	25°	C		1.8																	TJ =		25°	C

																			VOLTAGE	1.6
																				1.6
																				1.4
																				1.4
																				1.2
																			, COLLECTOR±EMITTER
		I	C = 1.0		A																		IC =			1.0		A					4.0 A		8.0	A
																				1.0			IC =			1.0		A					4.0 A		8.0	A
																				1.0
										4.0 A					8.0 A					0.8
																				0.8
																				0.6


																				0.4
																				0.4
																				0.2
																				0.2
																			CE
																			V
10				20			50		100		200	500		1000			2000 5000		V	05.0	10		20							50		100	200	500	1000			2000 5000
10				20			50		100		200	500		1000			2000 5000			05.0	10		20							50		100	200	500	1000			2000 5000
							IB, BASE CURRENT (mA)																							IB, BASE CURRENT (mA)
													Figure 9. Collector Saturation Region
																				2.8
																				2.8

				TJ = 25°C															(VOLTS)	2.4			T	J =	25		°C
				TJ = 25°C																2.4				J =	25		°C
																				2.0
																				2.0


																			VOLTAGE	1.6
																				1.6
																				1.2


																			V,
			VBE(sat) = IC				/IB	= 10											V,	0.8	VBE(sat)				@		IC		/IB =		10
			VBE(sat) = IC				/IB	= 10													VBE(sat)				@		IC		/IB =		10
		VBE @ VCE =					2.0	V

																				0.4		VBE @			VCE = 2.0						V
V	CE(sat) @ IC/IB						=	10												0.4	VCE(sat)				@ IC/IB =						10
V	CE(sat) @ IC/IB						=	10												0	VCE(sat)				@ IC/IB =						10
				0.5			1.0		2.0			5.0		10			20			0.2			0.5							1.0			2.0	5.0	10			20
						IC, COLLECTOR CURRENT (AMP)																					IC, COLLECTOR CURRENT (AMP)

Figure 10. ªOnº Voltages

4	Motorola Bipolar Power Transistor Device Data

2N6487 2N6488 2N6490 2N6491

PACKAGE DIMENSIONS

				±T±
	B		F	C
			T	S
4
Q			A
1	2	3	U
H
Z			K
Z
L				R
V				J
G
			D
	N

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.570	0.620	14.48	15.75
B	0.380	0.405	9.66	10.28
C	0.160	0.190	4.07	4.82
D	0.025	0.035	0.64	0.88
F	0.142	0.147	3.61	3.73
G	0.095	0.105	2.42	2.66
H	0.110	0.155	2.80	3.93
J	0.018	0.025	0.46	0.64
K	0.500	0.562	12.70	14.27
L	0.045	0.060	1.15	1.52
N	0.190	0.210	4.83	5.33
Q	0.100	0.120	2.54	3.04
R	0.080	0.110	2.04	2.79
S	0.045	0.055	1.15	1.39
T	0.235	0.255	5.97	6.47
U	0.000	0.050	0.00	1.27
V	0.045	±±±	1.15	±±±
Z	±±±	0.080	±±±	2.04

STYLE 1:

PIN 1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503938/

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