Материал: 74HC32A

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Quad 2-Input OR Gate

High±Performance Silicon±Gate CMOS

The MC54/74HC32A is identical in pinout to the LS32. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

•Output Drive Capability: 10 LSTTL Loads

•Outputs Directly Interface to CMOS, NMOS and TTL

•Operating Voltage Range: 2 to 6V

•Low Input Current: 1μA

•High Noise Immunity Characteristic of CMOS Devices

•In Compliance With the JEDEC Standard No. 7A Requirements

•Chip Complexity: 48 FETs or 12 Equivalent Gates

LOGIC DIAGRAM

A1

1

3

Y1

 

2

B1

 

 

 

A2

4

6

 

 

Y2

B2

5

 

 

 

 

9

 

Y = A+B

A3

8

 

 

Y3

B3

10

 

 

 

A4

12

11

Y4

 

13

B4

 

 

 

PIN 14 = VCC

PIN 7 = GND

Pinout: 14±Lead Packages (Top View)

VCC

B4

 

A4

 

Y4

 

B3

 

A3

 

Y3

 

 

14

 

13

 

12

 

11

 

10

 

9

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MC54/74HC32A

 

J SUFFIX

CERAMIC PACKAGE

14

CASE 632±08

1

 

 

N SUFFIX

PLASTIC PACKAGE

14

CASE 646±06

1

 

 

D SUFFIX

14

SOIC PACKAGE

1

CASE 751A±03

 

DT SUFFIX

14

TSSOP PACKAGE

1

CASE 948B±03

ORDERING INFORMATION

MC54HCXXAJ

Ceramic

MC74HCXXAN

Plastic

MC74HCXXAD

SOIC

MC74HCXXADT TSSOP

FUNCTION TABLE

 

Inputs

Output

 

 

 

 

A

 

B

Y

 

 

 

 

L

 

L

L

L

 

H

H

H

 

L

H

H

 

H

H

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

3

 

4

 

5

 

6

 

7

 

 

A1

B1

 

Y1

 

A2

 

B2

 

Y2

GND

10/95

Motorola, Inc. 1995

REV 6

MC54/74HC32A

MAXIMUM RATINGS*

Symbol

Parameter

Value

Unit

 

 

 

 

VCC

DC Supply Voltage (Referenced to GND)

± 0.5 to + 7.0

V

Vin

DC Input Voltage (Referenced to GND)

± 0.5 to VCC + 0.5

V

Vout

DC Output Voltage (Referenced to GND)

± 0.5 to VCC + 0.5

V

Iin

DC Input Current, per Pin

± 20

mA

Iout

DC Output Current, per Pin

± 25

mA

ICC

DC Supply Current, VCC and GND Pins

± 50

mA

PD

Power Dissipation in Still Air, Plastic or Ceramic DIP²

750

mW

 

SOIC Package²

500

 

 

TSSOP Package²

450

 

 

 

 

 

Tstg

Storage Temperature

± 65 to + 150

_C

TL

Lead Temperature, 1 mm from Case for 10 Seconds

 

_C

 

Plastic DIP, SOIC or TSSOP Package

260

 

 

Ceramic DIP

300

 

 

 

 

 

This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high±impedance circuit. For proper operation, Vin and

Vout should be constrained to the

range GND v (Vin or Vout) v VCC. Unused inputs must always be

tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open.

*Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions.

²Derating Ð Plastic DIP: ± 10 mW/ _C from 65_ to 125_C

Ceramic DIP: ± 10 mW/_C from 100_ to 125_C

SOIC Package: ± 7 mW/_C from 65_ to 125_C TSSOP Package: ± 6.1 mW/_C from 65_ to 125_C

For high frequency or heavy load considerations, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

 

Min

Max

Unit

 

 

 

 

 

 

VCC

DC Supply Voltage (Referenced to GND)

 

2.0

6.0

V

Vin, Vout

DC Input Voltage, Output Voltage (Referenced to GND)

0

VCC

V

TA

Operating Temperature, All Package Types

 

± 55

+ 125

_C

tr, tf

Input Rise and Fall Time

VCC = 2.0 V

0

1000

ns

 

(Figure 1)

VCC = 4.5 V

0

500

 

 

 

VCC = 6.0 V

0

400

 

MOTOROLA

3±2

MC54/74HC32A

DC CHARACTERISTICS (Voltages Referenced to GND)

 

 

 

 

VCC

Guaranteed Limit

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Condition

V

±55 to 25°C

≤85°C

≤125°C

Unit

 

 

 

 

 

 

 

 

 

VIH

Minimum High±Level Input Voltage

Vout = 0.1V or VCC ±0.1V

2.0

1.50

1.50

 

1.50

V

 

 

|Iout| ≤ 20μA

 

3.0

2.10

2.10

 

2.10

 

 

 

 

 

4.5

3.15

3.15

 

3.15

 

 

 

 

 

6.0

4.20

4.20

 

4.20

 

 

 

 

 

 

 

 

 

 

VIL

Maximum Low±Level Input Voltage

Vout = 0.1V or VCC ± 0.1V

2.0

0.50

0.50

 

0.50

V

 

 

|Iout| ≤ 20μA

 

3.0

0.90

0.90

 

0.90

 

 

 

 

 

4.5

1.35

1.35

 

1.35

 

 

 

 

 

6.0

1.80

1.80

 

1.80

 

 

 

 

 

 

 

 

 

 

 

VOH

Minimum High±Level Output

Vin = VIH or VIL

 

2.0

1.9

1.9

 

1.9

V

 

Voltage

|Iout| ≤ 20μA

 

4.5

4.4

4.4

 

4.4

 

 

 

 

 

6.0

5.9

5.9

 

5.9

 

 

 

 

 

 

 

 

 

 

 

 

 

Vin =VIH or VIL

|Iout| ≤ 2.4mA

3.0

2.48

2.34

 

2.20

 

 

 

 

|Iout| ≤ 4.0mA

4.5

3.98

3.84

 

3.70

 

 

 

 

|Iout| ≤ 5.2mA

6.0

5.48

5.34

 

5.20

 

VOL

Maximum Low±Level Output

Vin = VIH or VIL

 

2.0

0.1

0.1

 

0.1

V

 

Voltage

|Iout| ≤ 20μA

 

4.5

0.1

0.1

 

0.1

 

 

 

 

 

6.0

0.1

0.1

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

Vin = VIH or VIL

|Iout| ≤ 2.4mA

3.0

0.26

0.33

 

0.40

 

 

 

 

|Iout| ≤ 4.0mA

4.5

0.26

0.33

 

0.40

 

 

 

 

|Iout| ≤ 5.2mA

6.0

0.26

0.33

 

0.40

 

Iin

Maximum Input Leakage Current

Vin = VCC or GND

 

6.0

±0.1

±1.0

 

±1.0

μA

ICC

Maximum Quiescent Supply

Vin = VCC or GND

 

6.0

1.0

10

 

40

μA

 

Current (per Package)

Iout = 0μA

 

 

 

 

 

 

 

NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

AC CHARACTERISTICS (CL = 50pF, Input tr = tf = 6ns)

 

 

VCC

Guaranteed Limit

 

 

 

 

 

 

 

 

 

Symbol

Parameter

V

±55 to 25°C

≤85°C

 

≤125°C

Unit

 

 

 

 

 

 

 

 

tPLH,

Maximum Propagation Delay, Input A or B to Output Y

2.0

75

95

 

110

ns

tPHL

(Figures 1 and 2)

3.0

30

40

 

55

 

 

 

4.5

15

19

 

22

 

 

 

6.0

13

16

 

19

 

 

 

 

 

 

 

 

 

tTLH,

Maximum Output Transition Time, Any Output

2.0

75

95

 

110

ns

tTHL

(Figures 1 and 2)

3.0

27

32

 

36

 

 

 

4.5

15

19

 

22

 

 

 

6.0

13

16

 

19

 

 

 

 

 

 

 

 

 

Cin

Maximum Input Capacitance

 

10

10

 

10

pF

NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High± Speed CMOS Data Book (DL129/D).

 

 

Typical @ 25°C, VCC = 5.0 V, VEE = 0 V

 

CPD

Power Dissipation Capacitance (Per Buffer)*

20

pF

*Used to determine the no±load dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the Motorola High±Speed CMOS Data Book (DL129/D).

3±3

MOTOROLA

MC54/74HC32A

 

tr

tf

 

90%

VCC

INPUT

 

50%

 

A OR B

 

10%

GND

 

 

tPLH

tPHL

90%

OUTPUT Y 50%

10%

tTLH

tTHL

Figure 1. Switching Waveforms

 

TEST

 

POINT

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

DEVICE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

UNDER

 

 

 

 

 

 

CL*

TEST

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

*Includes all probe and jig capacitance

Figure 2. Test Circuit

A

Y

B

Figure 3. Expanded Logic Diagram

(1/4 of the Device)

MOTOROLA

3±4

MC54/74HC32A

OUTLINE DIMENSIONS

J SUFFIX

CERAMIC DIP PACKAGE

CASE 632±08

ISSUE Y

 

-A-

14

8

 

-B-

1

7

 

 

C

-T-

 

K

SEATING

 

PLANE

 

 

F

G

N

D 14 PL

0.25 (0.010) M T A S

 

 

 

 

 

NOTES:

 

 

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

 

 

 

 

3. DIMENSION L TO CENTER OF LEAD WHEN

 

 

 

 

 

FORMED PARALLEL.

 

 

 

 

 

 

 

4. DIMESNION F MAY NARROW TO 0.76 (0.030)

L

 

 

 

 

WHERE THE LEAD ENTERS THE CERAMIC

 

 

 

 

BODY.

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

DIM

MIN

MAX

MIN

MAX

 

 

 

 

 

A

0.750

0.785

19.05

19.94

 

 

 

 

 

B

0.245

0.280

6.23

7.11

 

 

 

 

 

C

0.155

0.200

3.94

5.08

 

 

 

 

 

D

0.015

0.020

0.39

0.50

 

 

 

 

 

F

0.055

0.065

1.40

1.65

M

 

 

 

 

G

0.100 BSC

2.54 BSC

 

 

 

 

J

0.008

0.015

0.21

0.38

J 14 PL

 

 

 

 

K

0.125

0.170

3.18

4.31

 

 

 

 

L

0.300 BSC

7.62 BSC

0.25 (0.010)

M

T

B

S

M

0°

15°

0°

15°

 

 

 

 

 

N

0.020

0.040

0.51

1.01

N SUFFIX

PLASTIC DIP PACKAGE

CASE 646±06

ISSUE L

14

 

8

 

 

 

 

 

B

 

1

 

7

 

 

 

A

 

 

 

 

F

 

 

L

 

 

 

 

C

 

 

 

N

J

 

 

 

 

 

 

 

SEATING

K

H

G

D

PLANE

M

 

NOTES:

1.LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION.

2.DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL.

3.DIMENSION B DOES NOT INCLUDE MOLD FLASH.

4.ROUNDED CORNERS OPTIONAL.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.715

0.770

18.16

19.56

B

0.240

0.260

6.10

6.60

C

0.145

0.185

3.69

4.69

D

0.015

0.021

0.38

0.53

F

0.040

0.070

1.02

1.78

G

0.100 BSC

2.54 BSC

H

0.052

0.095

1.32

2.41

J

0.008

0.015

0.20

0.38

K

0.115

0.135

2.92

3.43

L

0.300 BSC

7.62 BSC

M

0

10

0

10

N

0.015

0.039

0.39

1.01

3±5

MOTOROLA

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