Материал: 9001
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
BU1706AX |
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GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1750 |
V |
VCEO |
Collector-emitter voltage (open base) |
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- |
850 |
V |
IC |
Collector current (DC) |
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- |
5 |
A |
ICM |
Collector current peak value |
Ths ≤ 25 ˚C |
- |
8 |
A |
Ptot |
Total power dissipation |
- |
32 |
W |
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VCEsat |
Collector-emitter saturation voltage |
IC = 1.5 A; IB = 0.3 A |
- |
1.0 |
V |
ICsat |
Collector saturation current |
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1.5 |
- |
A |
tf |
Fall time |
ICM = 1.5 A; IB(on) = 0.3 A |
0.25 |
0.6 |
μs |
PINNING - SOT186A |
PIN CONFIGURATION |
SYMBOL |
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PIN |
DESCRIPTION |
case |
c |
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1 |
base |
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2 |
collector |
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b |
3 |
emitter |
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case |
isolated |
1 2 3 |
e |
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LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VCESM |
Collector-emitter voltage peak value |
VBE = 0 V |
- |
1750 |
V |
VCEO |
Collector-emitter voltage (open base) |
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850 |
V |
IC |
Collector current (DC) |
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5 |
A |
ICM |
Collector current peak value |
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- |
8 |
A |
IB |
Base current (DC) |
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3 |
A |
IBM |
Base current peak value |
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5 |
A |
-IB(AV) |
Reverse base current |
average over any 20ms period |
- |
100 |
mA |
-IBM |
Reverse base current peak value |
Ths ≤ 25 ˚C |
- |
4 |
A |
Ptot |
Total power dissipation |
- |
32 |
W |
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Tstg |
Storage temperature |
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-40 |
150 |
˚C |
Tj |
Junction temperature |
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- |
150 |
˚C |
THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
Rth j-hs |
Junction to heatsink |
with heatsink compound |
- |
4.0 |
K/W |
Rth j-a |
Junction to ambient |
in free air |
55 |
- |
K/W |
April 1994 |
1 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU1706AX |
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ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
R.M.S. isolation voltage from all |
f = 50-60 Hz; sinusoidal |
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2500 |
V |
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three terminals to external |
waveform; |
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heatsink |
R.H. ≤ 65% ; clean and dustfree |
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Cisol |
Capacitance from T2 to external |
f = 1 MHz |
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10 |
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pF |
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heatsink |
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STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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I |
Collector cut-off current 1 |
V = |
0 |
V; V |
CE |
= V |
CESMmax |
- |
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1.0 |
mA |
CES |
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BE |
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μA |
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ICES |
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VBE = |
0 |
V; VCE = 1500 V |
- |
- |
20 |
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ICES |
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VBE = |
0 |
V; VCE = VCESMmax; |
- |
- |
2.0 |
mA |
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IEBO |
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Tj = 125 ˚C |
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Emitter cut-off current |
VEB = |
12 V; IC = 0 A |
- |
- |
1 |
mA |
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VCEOsust |
Collector-emitter sustaining voltage |
IB = 0 A; IC = 100 mA; |
750 |
- |
- |
V |
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L = 25 mH |
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VCEsat |
Collector-emitter saturation voltage |
IC = 1.5 A; IB = 0.3 |
A |
- |
- |
1.0 |
V |
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VBEsat |
Base-emitter saturation voltage |
IC = 1.5 A; IB = 0.3 |
A |
- |
- |
1.3 |
V |
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hFE |
DC current gain |
IC = 5 mA; VCE = 10 V |
8 |
- |
- |
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hFE |
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IC = 400 mA; VCE = 3 V |
12 |
18 |
35 |
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hFE |
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IC = 1.5 A; VCE = 1 |
V |
5 |
7 |
- |
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DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
TYP. |
MAX. |
UNIT |
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ton |
Switching times (resistive load) |
ICon = 1.5 |
A; IBon = -IBoff = 0.3 A |
1.1 |
1.5 |
μs |
Turn-on time |
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ts |
Turn-off storage time |
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5 |
6.5 |
μs |
tf |
Turn-off fall time |
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0.75 |
1.0 |
μs |
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Switching times (inductive load) |
ICon = 1.5 |
A; IBon = 0.3 A; LB = 1 μH; |
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ts |
Turn-off storage time |
-VBB = 5 V |
2.0 |
3.0 |
μs |
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tf |
Turn-off fall time |
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0.25 |
0.6 |
μs |
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Switching times (inductive load) |
ICon = 1.5 |
A; IBon = 0.3 A; LB = 1 μH; |
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ts |
Turn-off storage time |
-VBB = 5 V; Tj = 100 ˚C |
2.2 |
3.3 |
μs |
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tf |
Turn-off fall time |
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0.2 |
0.7 |
μs |
1 Measured with half sine-wave voltage (curve tracer).
April 1994 |
2 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
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Silicon Diffused Power Transistor |
BU1706AX |
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+ 50v 100-200R
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Horizontal |
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Oscilloscope |
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Vertical |
300R |
1R |
6V
30-60 Hz
Fig.1. Test circuit for VCEOsust.
IC / mA
250 
200 
100 
0
VCE / V |
min |
VCEOsust
Fig.2. Oscilloscope display for VCEOsust.
VCC
RL
VIM
RB
0 |
T.U.T. |
tp
T
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 μs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
ICon
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90 % |
90 % |
IC |
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10 % |
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ts |
ton |
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tf |
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toff |
IB |
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IBon |
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10 % |
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tr |
30ns |
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-IBoff |
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Fig.4. Switching times waveforms with resistive load. |
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VCC |
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LC |
IBon |
LB |
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T.U.T. |
-VBB
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LB = 1 uH
VCC
LC
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VCL |
IBon |
LB |
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-VBB |
T.U.T. |
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Fig.6. Test Circuit RBSOA.
VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;
LB = 1 μH
April 1994 |
3 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
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Silicon Diffused Power Transistor |
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BU1706AX |
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ICon |
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1.2 |
VBESAT / V |
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BU1706A |
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90 % |
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1.1 |
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IC |
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1 |
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Tj = 25 C |
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Tj = 125 C |
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0.9 |
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10 % |
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0.8 |
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IC/IB = |
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ts |
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tf |
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t |
0.7 |
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4 |
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toff |
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IB |
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IBon |
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0.6 |
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5 |
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6 |
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0.5 |
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t |
0.4 |
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0.1 |
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-IBoff |
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IC / A |
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Fig.7. |
Switching times waveforms with inductive load. |
Fig.10. |
Typical base-emitter saturation voltage. |
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VBEsat = f(IC); parameter IC/IB |
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120 |
PD% |
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Normalised Power Derating |
1 |
VCESAT / V |
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BU1706A |
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with heatsink compound |
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110 |
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IC/IB = |
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0.9 |
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100 |
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6 |
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0.8 |
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90 |
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5 |
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0.7 |
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80 |
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4 |
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70 |
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0.6 |
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60 |
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0.5 |
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50 |
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0.4 |
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Tj = 25 C |
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40 |
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0.3 |
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Tj = 125 C |
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30 |
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0.2 |
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20 |
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10 |
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0.1 |
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0 |
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0 |
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20 |
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Ths / C |
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IC / A |
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Fig.8. |
Normalised power dissipation. |
Fig.11. |
Typical collector-emitter saturation voltage. |
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PD% = 100×PD/PD 25 ˚C = f (Ths) |
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VCEsat = f(IC); parameter IC/IB |
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10 |
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Zth / (K/W) |
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BU1706AX |
1.2 |
VBESAT / V |
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BU1706A |
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Tj = 25 C |
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0.5 |
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1.1 |
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Tj = 125 C |
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1 |
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0.2 |
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1 |
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0.1 |
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0.05 |
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0.1 |
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0.02 |
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0.9 |
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P |
tp |
tp |
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IC = |
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D = T |
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0.8 |
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3 A |
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D |
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0.01 |
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D=0 |
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2 A |
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T |
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0.7 |
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1.5 A |
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0.5 A |
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0.001 |
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1u |
10u |
100u |
1m |
10m 100m |
1 |
10 |
100 |
0.6 |
0 |
1 |
2 |
3 |
4 |
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t / s |
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IB / A |
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Fig.9. Transient thermal impedance. |
Fig.12. Typical base-emitter saturation voltage. |
Zth j-hs = f(t); parameter D = tp/T |
VBEsat = f(IB); parameter IC |
April 1994 |
4 |
Rev 1.000 |
Philips Semiconductors |
Product specification |
|
|
Silicon Diffused Power Transistor |
BU1706AX |
|
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IC / A |
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10 |
ICM |
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ICDC |
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1 |
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Ptot |
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tp = |
0.1 |
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100 us |
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1 ms |
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10 ms |
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DC |
0.01 |
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1 |
10 VCE / V 100 |
1000 |
Fig.13. Forward bias safe operating area. Ths = 25 ˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of the envelope.
10 |
VCESAT / V |
BU1706A |
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1 |
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3A |
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2A |
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1.5 A |
0.1 |
IC = 0.5A |
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Tj = 25 C |
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Tj = 125 C |
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0.01 |
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0.01 |
0.1 |
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1 |
10 |
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IB / A
Fig.14. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC
h FE |
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BU1706A |
100 |
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5 V |
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10 |
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1 V |
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Tj = 25 C |
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1 |
Tj = 125 C |
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0.1 |
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0.01 |
0.1 |
1 |
10 |
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IC / A |
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Fig.15. Typical DC current gain. hFE = f(IC); parameter VCE
IC / A |
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BU1706A |
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6 |
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5 |
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4 |
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3 |
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2 |
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|
1 |
|
|
|
|
|
0 |
|
|
|
|
|
0 |
400 |
800 |
1200 |
1600 |
2000 |
|
|
VCE / V |
|
|
|
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
April 1994 |
5 |
Rev 1.000 |