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Philips Semiconductors	Product Specification


PowerMOS transistor	BUK455-100A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

SYMBOL

PARAMETER

MAX.

UNIT

field-effect power transistor in a

BUK455

-100A

-100B

plastic envelope.

The device is intended for use in

VDS

Drain-source voltage

100

Switched Mode Power Supplies

Drain current (DC)

(SMPS), motor control, welding,

Ptot

Total power dissipation

125

DC/DC and AC/DC converters, and

Junction temperature

175

˚C

in general purpose switching

RDS(ON)

Drain-source on-state

0.08

0.1

applications.

resistance

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1gate

2drain

3source tab drain

tab

1 2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL	PARAMETER	CONDITIONS		MIN.	MAX.			UNIT

VDS	Drain-source voltage	-		-		100		V
VDGR	Drain-gate voltage	RGS = 20 kΩ		-		100		V
±VGS	Gate-source voltage	-		-		30		V
					-100A		-100B
ID	Drain current (DC)	Tmb =	25 ˚C	-	26		23	A
ID	Drain current (DC)	Tmb = 100 ˚C		-	18		16	A
IDM	Drain current (pulse peak value)	Tmb =	25 ˚C	-	104		92	A
Ptot	Total power dissipation	Tmb =	25 ˚C	-		125		W
Tstg	Storage temperature	-		- 55		175		˚C
Tj	Junction Temperature	-		-		175		˚C

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction to		-	-	1.2	K/W
	mounting base
Rth j-a	Thermal resistance junction to		-	60	-	K/W
	ambient

April 1993

Rev 1.100

Philips Semiconductors	Product Specification

PowerMOS transistor	BUK455-100A/B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS			MIN.	TYP.	MAX.	UNIT
V(BR)DSS	Drain-source breakdown	VGS = 0 V; ID = 0.25 mA			100	-	-	V
	voltage
VGS(TO)	Gate threshold voltage	VDS = VGS; ID = 1 mA			2.1	3.0	4.0	V
IDSS	Zero gate voltage drain current	VDS = 100	V; VGS = 0	V; Tj = 25 ˚C	-	1	10	μA
IDSS	Zero gate voltage drain current	VDS = 100	V; VGS = 0	V; Tj =125 ˚C	-	0.1	1.0	mA
IGSS	Gate source leakage current	VGS = ±30 V; VDS = 0		V	-	10	100	nA
RDS(ON)	Drain-source on-state	VGS = 10 V;		BUK455-100A	-	0.07	0.08	Ω
	resistance	ID = 13 A		BUK455-100B	-	0.08	0.1	Ω

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

gfs	Forward transconductance	VDS = 25 V; ID = 13 A	7.0	13.5	-	S
Ciss	Input capacitance	VGS = 0 V; VDS = 25 V; f = 1 MHz	-	1650	2000	pF
Coss	Output capacitance		-	350	500	pF
Crss	Feedback capacitance		-	100	150	pF
td on	Turn-on delay time	VDD = 30 V; ID = 3 A;	-	15	30	ns
tr	Turn-on rise time	VGS = 10 V; RGS = 50 Ω;	-	25	40	ns
td off	Turn-off delay time	Rgen = 50 Ω	-	100	160	ns
tf	Turn-off fall time		-	50	80	ns
Ld	Internal drain inductance	Measured from contact screw on	-	3.5	-	nH
		tab to centre of die
Ld	Internal drain inductance	Measured from drain lead 6 mm	-	4.5	-	nH
		from package to centre of die
Ls	Internal source inductance	Measured from source lead 6 mm	-	7.5	-	nH
		from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT

IDR	Continuous reverse drain	-		-	-	26	A
	current
IDRM	Pulsed reverse drain current	-		-	-	104	A
VSD	Diode forward voltage	IF = 26	A ; VGS = 0 V	-	1.3	1.7	V
trr	Reverse recovery time	IF = 26	A; -dIF/dt = 100 A/μs;	-	90	-	ns
Qrr	Reverse recovery charge	VGS = 0 V; VR = 30 V		-	0.8	-	μC

AVALANCHE LIMITING VALUE

Tmb = 25 ˚C unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT

WDSS	Drain-source non-repetitive	ID = 26 A ; VDD ≤ 50 V ;		-	-	100	mJ
	unclamped inductive turn-off	VGS = 10 V ; RGS = 50	Ω
	energy

April 1993

Rev 1.100

Philips Semiconductors	Product Specification

PowerMOS transistor	BUK455-100A/B

120	PD%					Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0	0	20	40	60	80	100	120	140	160	180
	0	20	40	60	80	100	120	140	160	180
					Tmb / C
	Fig.1.		Normalised power dissipation.
		PD% = 100×PD/PD 25 ˚C = f(Tmb)

ID%						Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0	20	40	60		80	100	120	140	160	180
					Tmb / C
Fig.2. Normalised continuous drain current.
ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS										³ 10 V
1000	ID / A							BUK455-100A,B
1000
100				VDS/ID		A
100						B
			=					tp = 10 us
			=
		RDS(ON)
		RDS(ON)

100 us

1 ms

10 ms

100 ms

1	10	100	1000
		VDS / V
Fig.3.	Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter tp

10	Zth j-mb / (K/W)				BUKx55-lv
10
1	D =
1	0.5
	0.5
	0.2
0.1	0.1
0.1	0.05
	0.05
	0.02
0.01	0		P	tp	D =	tp
	0		D		D =	T
					T	t
0.001					T
0.001
1E-07		1E-05	1E-03		1E-01	1E+01
			t / s

Fig.4. Transient thermal impedance.
	Zth j-mb = f(t); parameter D = tp/T
ID / A				BUK455-100A
50		20
		20
	15			8	7
40	10				7
	10

30
				VGS / V =	6
20
10					5
0					4
0
0	2	4	6	8	10
			VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C.
	ID = f(VDS); parameter VGS
0.5	RDS(ON) / Ohm			BUK455-100A
	4.5	5	5.5
0.4				6
				6
0.3				VGS / V =
0.3				6.5
				6.5
				7
0.2				7.5
				7.5
0.1				10
0.1
				20
0	0		20	40
	0		20	40
				ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS

April 1993

Rev 1.100

Philips Semiconductors	Product Specification

PowerMOS transistor	BUK455-100A/B

ID / A				BUK455-100A
50
		Tj / C =	25		150
40
30
20
10
0	2	4	6	8	10
0	2	4	6	8	10
		VGS / V

Fig.7.	Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S		BUK455-100A
15
10
5
0
0	20	40
		ID / A

Fig.8.	Typical transconductance, Tj = 25 ˚C.
	gfs = f(ID); conditions: VDS = 25 V
a				Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
-60	-20	20	60	100	140	180
			Tj /	C
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 13 A; VGS = 10 V

VGS(TO) / V
4			max.
4
3			typ.
3
			min.
2
1
0
-60	-20	20	60	100	140	180
			Tj /	C
	Fig.10.	Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

ID / A		SUB-THRESHOLD CONDUCTION
1E-01
1E-02
1E-03	2 %		typ	98 %
1E-03
1E-04
1E-05
1E-06
0	1	2	3	4
		VGS / V
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
10000 C / pF				BUK4y5-100
				Ciss
1000
				Coss
100				Crss
				Crss
10
0	20	VDS / V		40
		VDS / V

Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

April 1993

Rev 1.100

Philips Semiconductors	Product Specification

PowerMOS transistor	BUK455-100A/B

12	VGS / V			BUK455-100
10				VDS / V =20
10
8				80
8
6
4
2
0	0	10	20	30
	0	10	20	30
			QG / nC

Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 26 A; parameter VDS

IF / A		BUK455-100A
60
50
40
30
Tj / C = 150	25
20
10
0
0	1	2
	VSDS / V

Fig.14. Typical reverse diode current.

IF = f(VSDS); conditions: VGS = 0 V; parameter Tj

WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20	40	60	80	100	120	140	160	180
				Tmb /	C
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tmb); conditions: ID = 26 A

+ VDD

VDS

VGS

-ID/100

0	T.U.T.

RGS

R 01 shunt

Fig.16. Avalanche energy test circuit.

WDSS = 0.5 × LID2 × BVDSS/(BVDSS - VDD)

April 1993

Rev 1.100

Источник: https://studfile.net/preview/16504008/

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