Материал: 9074
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ΔΧ/ΔΧ ανδ ΑΧ/ΔΧ χονϖερτερσ, ανδ |
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ρεσιστανχε; |
ς 5 ς |
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Ω |
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ιν αυτομοτιϖε ανδ γενεραλ πυρποσε |
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ΓΣ |
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σωιτχηινγ αππλιχατιονσ. |
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ΠΙΝΝΙΝΓ − ΣΟΤ186 |
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ΠΙΝ ΧΟΝΦΙΓΥΡΑΤΙΟΝ |
ΣΨΜΒΟΛ |
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ΠΙΝ |
ΔΕΣΧΡΙΠΤΙΟΝ |
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χασε |
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1γατε
2 |
δραιν |
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3 |
σουρχε |
γ |
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χασε |
ισολατεδ |
σ |
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1 2 3 |
ΛΙΜΙΤΙΝΓ ςΑΛΥΕΣ Λιμιτινγ ϖαλυεσ ιν αχχορδανχε ωιτη τηε Αβσολυτε Μαξιμυμ Σψστεμ (ΙΕΧ 134)
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
ΜΙΝ. |
ΜΑΞ. |
ΥΝΙΤ |
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ς |
ΔΣ |
Δραιν−σουρχε ϖολταγε |
− |
− |
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60 |
ς |
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ς |
ΔΓΡ |
Δραιν−γατε ϖολταγε |
Ρ = 20 κ Ω |
− |
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60 |
ς |
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ΓΣ |
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±ς |
ΓΣ |
Γατε−σουρχε ϖολταγε |
− |
− |
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15 |
ς |
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±ς |
ΓΣΜ |
Νον−ρεπετιτιϖε γατε−σουρχε ϖολταγε≤ 50τ μσ |
− |
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20 |
ς |
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π |
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−60Α |
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−60Β |
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Ι |
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Δραιν χυρρεντ (ΔΧ) |
Τ = 25 Χ |
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13 |
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12 |
Α |
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ησ |
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Ι |
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Δραιν χυρρεντ (ΔΧ) |
Τ = 100 Χ |
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8.2 |
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7.6 |
Α |
Ι |
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Δραιν χυρρεντ (πυλσε πεακ ϖαλυε) |
ησ =Τ 25 Χ |
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52 |
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48 |
Α |
ΔΜ |
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ησ |
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Πτοτ |
Τοταλ ποωερ δισσιπατιον |
ησΤ= 25 Χ |
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25 |
Ω |
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Τστγ |
Στοραγε τεμπερατυρε |
− |
− 55 |
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150 |
Χ |
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Τϕ |
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ϑυνχτιον Τεμπερατυρε |
− |
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150 |
Χ |
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ΤΗΕΡΜΑΛ ΡΕΣΙΣΤΑΝΧΕΣ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
ΜΙΝ. |
ΤΨΠ. |
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ΜΑΞ. |
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ΥΝΙΤ |
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Ρ τη ϕ−ησ |
Τηερμαλ ρεσιστανχε ϕυνχτιον το |
ωιτη ηεατσινκ χομπουνδ |
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− |
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5.0 |
Κ/Ω |
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ηεατσινκ |
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Ρ τη ϕ−α |
Τηερμαλ ρεσιστανχε ϕυνχτιον το |
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55 |
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Κ/Ω |
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αμβιεντ |
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Απριλ 1993 |
1 |
Ρεϖ 1.100 |
ΙΔΣΣ ΙΓΣΣ Ρ ΔΣ(ΟΝ)
Ζερο γατε ϖολταγε δραιν χυρρεντ Γατε σουρχε λεακαγε χυρρεντ Δραιν−σουρχε ον−στατε ρεσιστανχε
ΔΣς= 60 ς; ς |
ΓΣ = 0 ς; Τ ϕ=125 Χ |
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ς = ±15 ς; ς |
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= 0 ς |
ΓΣΓΣς= 5 ς; |
ΔΣ |
ΒΥΚ543−60Α |
Ι= 10 Α |
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ΒΥΚ543−60Β |
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μΑ |
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0.1 |
1.0 |
μΑ |
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10 |
100 |
νΑ |
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0.075 |
0.085 |
Ω |
− |
0.08 |
0.10 |
Ω |
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ΔΨΝΑΜΙΧ ΧΗΑΡΑΧΤΕΡΙΣΤΙΧΣ Τησ = 25 Χ υνλεσσ οτηερωισε σπεχιφιεδ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
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ΜΙΝ. |
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ΤΨΠ. |
ΜΑΞ. |
ΥΝΙΤ |
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γ φσ |
Φορωαρδ τρανσχονδυχτανχε |
ΔΣς = 25 ς; Ι |
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= 10 Α |
7 |
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10 |
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Σ |
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Χ |
Ινπυτ χαπαχιτανχε |
ς = 0 ς; ς |
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= 25 ς; φ = 1 ΜΗζ |
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700 |
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825 |
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πΦ |
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Χοσσισσ |
Ουτπυτ χαπαχιτανχε |
ΓΣ |
ΔΣ |
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240 |
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350 |
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πΦ |
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Χρσσ |
Φεεδβαχκ χαπαχιτανχε |
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130 |
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160 |
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πΦ |
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τδ ον |
Τυρν−ον δελαψ τιμε |
ς = 30 ς; Ι |
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= 3 Α; |
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30 |
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νσ |
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τ |
Τυρν−ον ρισε τιμε |
ς = 5 ς; Ρ |
ΓΣ |
= 50 Ω; |
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95 |
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120 |
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νσ |
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ρ |
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ΓΣ |
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τ |
Τυρν−οφφ δελαψ τιμε |
Ρ = 50 Ω |
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80 |
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110 |
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νσ |
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τφδ οφφ |
Τυρν−οφφ φαλλ τιμε |
γεν |
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65 |
85 |
νσ |
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Λδ |
Ιντερναλ δραιν ινδυχτανχε |
Μεασυρεδ φρομ δραιν λεαδ 6 μμ |
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4.5 |
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νΗ |
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φρομ παχκαγε το χεντρε οφ διε |
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Λσ |
Ιντερναλ σουρχε ινδυχτανχε |
Μεασυρεδ φρομ σουρχε λεαδ 6 μμ |
− |
7.5 |
− |
νΗ |
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φρομ παχκαγε το σουρχε βονδ παδ |
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ΙΣΟΛΑΤΙΟΝ Τησ = 25 Χ υνλεσσ οτηερωισε σπεχιφιεδ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
ΜΙΝ. |
ΤΨΠ. |
ΜΑΞ. |
ΥΝΙΤ |
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ς ισολ |
Ρεπετιτιϖε πεακ ϖολταγε φρομ αλλ |
Ρ.≤Η.65% ; χλεαν ανδ δυστφρεε |
− |
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1500 |
ς |
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τηρεε τερμιναλσ το εξτερναλ |
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ηεατσινκ |
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Χισολ |
Χαπαχιτανχε φρομ Τ2 το εξτερναλ |
φ = 1 ΜΗζ |
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12 |
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πΦ |
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ηεατσινκ |
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ΡΕςΕΡΣΕ ΔΙΟΔΕ ΛΙΜΙΤΙΝΓ ςΑΛΥΕΣ ΑΝΔ ΧΗΑΡΑΧΤΕΡΙΣΤΙΧΣ Τησ = 25 Χ υνλεσσ οτηερωισε σπεχιφιεδ
ΣΨΜΒΟΛ |
ΠΑΡΑΜΕΤΕΡ |
ΧΟΝΔΙΤΙΟΝΣ |
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ΜΙΝ. |
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ΤΨΠ. |
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ΜΑΞ. |
ΥΝΙΤ |
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ΙΔΡ |
Χοντινυουσ ρεϖερσε δραιν |
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− |
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13 |
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Α |
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χυρρεντ |
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ΙΔΡΜ |
Πυλσεδ ρεϖερσε δραιν χυρρεντ |
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Α |
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ς ΣΔ |
Διοδε φορωαρδ ϖολταγε |
Φ =Ι |
13 |
Α ; ς ΓΣ = 0 ς |
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1.1 |
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1.3 |
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τ |
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Ρεϖερσε ρεχοϖερψ τιμε |
Ι= |
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Α; −δΙ /δτ = 100 Α/μσ; |
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60 |
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νσ |
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ρρ |
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Φ |
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Φ |
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Θ |
ρρ |
Ρεϖερσε ρεχοϖερψ χηαργε |
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ς = 0 ς; ς |
Ρ |
= 30 ς |
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0.20 |
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μΧ |
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ΓΣ |
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Απριλ 1993 |
2 |
Ρεϖ 1.100 |
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unclamped inductive turn-off |
ΓΣ V= 5 V ; R |
£ 25 V ; |
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45 |
mJ |
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ΓΣ = 50 W |
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energy |
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120 |
PD% |
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Normalised Power Derating |
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with heatsink compound |
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100 |
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Ths / C |
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Fig.1. |
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Normalised power dissipation. |
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PD% = 100×PD/PD 25 ˚C = f(Ths) |
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ID% |
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Normalised Current Derating |
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120 |
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with heatsink compound |
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100 |
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Ths / C |
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Fig.2. Normalised continuous drain current. |
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ID% = 100×ID/ID 25 ˚C = f(Ths); conditions: VGS ³ 5 V |
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100 |
ID / A |
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A |
BUK543-60 |
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VDS/ID |
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tp = 10 us |
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RDS(ON) |
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10 |
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100 us |
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1 ms |
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DC |
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10 ms |
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100 ms |
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0.1 |
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VDS / V |
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Fig.3. |
Safe operating area. Ths = 25 ˚C |
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ID & IDM = f(VDS); IDM single pulse; parameter tp |
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1E+01 |
Zth j-hs / (K/W) |
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ZTHX43 |
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0.5 |
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1E+00 |
0.2 |
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0.1 |
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0.05 |
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1E-01 |
0.02 |
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tp |
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tp |
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PD |
D = |
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T |
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T |
t |
1E-02 |
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1E-05 |
1E-03 |
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1E-01 |
1E+01 |
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1E-07 |
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t / s |
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Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
April 1993 |
3 |
Rev 1.100 |
ID / A |
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BUK553-50A |
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40 |
10 |
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VGS / V = |
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30 |
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VDS / V |
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Fig.5. Typical output characteristics, Tj = 25 ˚C. |
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ID = f(VDS); parameter VGS |
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0.5 |
RDS(ON) / Ohm |
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BUK553-50A |
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VGS / V = |
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0.4 |
2.5 |
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3.5 |
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4.5 |
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0.3 |
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0.2 |
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0.1 |
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ID / A |
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Fig.6. |
Typical on-state resistance, Tj = 25 ˚C. |
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RDS(ON) = f(ID); parameter VGS |
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ID / A |
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BUK553-50A |
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40 |
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Tj / C = |
25 |
150 |
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20 |
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VGS / V |
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Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
gfs / S |
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BUK 553-50A |
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10 |
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ID / A |
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Fig.8. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V
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Normalised RDS(ON) = f(Tj) |
1.5 |
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1.0 |
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Tj / |
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Fig.9. Normalised drain-source on-state resistance. |
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a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 10 A; VGS = 5 V |
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VGS(TO) / V |
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2 |
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max. |
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typ. |
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min. |
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Tj / |
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Fig.10. |
Gate threshold voltage. |
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VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS |
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April 1993 |
4 |
Rev 1.100 |
ID / A |
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SUB-THRESHOLD CONDUCTION |
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1E-01 |
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1E-02 |
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1E-03 |
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2 % |
typ |
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98 % |
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1E-04 |
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1E-05 |
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1E-06 |
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0.8 |
1.2 |
1.6 |
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2.4 |
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VGS / V |
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Fig.11. Sub-threshold drain current. |
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ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS |
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C / pF |
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BUK5y3-50 |
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10000 |
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1000 |
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Ciss |
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Coss |
100 |
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Crss |
10 |
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VDS / V |
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Fig.12. |
Typical capacitances, Ciss, Coss, Crss. |
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C = f(VDS); conditions: VGS = 0 V; f = 1 MHz |
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12 |
VGS / V |
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BUK553-60 |
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10 |
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VDS / V = 12 |
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48 |
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QG / nC |
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Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 20 A; parameter VDS
IF / A |
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BUK553-50A |
50 |
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40 |
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Tj / C = 150 |
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VSDS / V |
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Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS% |
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120 |
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110 |
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100 |
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70 |
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60 |
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40 |
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30 |
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20 |
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10 |
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0 |
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20 |
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140 |
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Ths / |
C |
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Fig.15. Normalised avalanche energy rating. |
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WDSS% = f(Ths); conditions: ID = 20 A |
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+ VDD
L
VDS
-
VGS
-ID/100
0 |
T.U.T. |
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RGS
R 01 shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 × LID2 × BVDSS/(BVDSS - VDD)
Απριλ 1993 |
5 |
Ρεϖ 1.100 |