Материал: 9251
DISCRETE SEMICONDUCTORS
M3D102
BAW56W
High-speed double diode
Product specification |
1996 Apr 04 |
Supersedes data of December 1993
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed double diode |
BAW56W |
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FEATURES
∙Very small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 75 V
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙High-speed switching in e.g. surface mounted circuits.
LIMITING VALUES
DESCRIPTION
The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small plastic SMD SOT323 package
PINNING
PIN |
DESCRIPTION |
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1 |
cathode (k1) |
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2 |
cathode (k2) |
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3 |
common anode |
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2 |
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2 
1
3
3
MAM092
Top view
Marking code: A1.
Fig.1 Simplified outline (SOT323) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VRRM |
repetitive peak reverse voltage |
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85 |
V |
VR |
continuous reverse voltage |
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75 |
V |
IF |
continuous forward current |
single diode loaded; see Fig.2; |
− |
150 |
mA |
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note 1 |
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double diode loaded; see Fig.2; |
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130 |
mA |
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note 1 |
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IFRM |
repetitive peak forward current |
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500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
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4 |
A |
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t = 1 ms |
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1 |
A |
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t = 1 s |
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0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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200 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 04 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed double diode |
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BAW56W |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
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715 |
mV |
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IF = 10 mA |
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855 |
mV |
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IF = 50 mA |
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1 |
V |
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IF = 150 mA |
− |
1.25 |
V |
IR |
reverse current |
see Fig.5 |
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VR = 25 V |
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30 |
nA |
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VR = 75 V |
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1 |
μA |
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VR = 25 V; Tj = 150 °C |
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30 |
μA |
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VR = 75 V; Tj = 150 °C |
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50 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
− |
2.0 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
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4 |
ns |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 10 mA; |
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1.75 |
V |
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tr = 20 ns; see Fig.8 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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300 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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625 |
K/W |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 04 |
3 |
Philips Semiconductors |
Product specification |
|
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High-speed double diode |
BAW56W |
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GRAPHICAL DATA |
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200 |
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MGA889 |
300 |
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MBG382 |
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handbook, halfpage |
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IF |
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IF |
single diode loaded |
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(mA) |
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(1) |
(2) |
(3) |
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(mA) |
double diode loaded |
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200 |
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100 |
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100 |
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0 |
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0 |
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0 |
1 |
VF (V) |
2 |
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0 |
100 |
Tamb (oC) |
200 |
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(1) |
Tj = 150 °C; typical values. |
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(2) |
Tj = 25 |
°C; typical values. |
Device mounted on an FR4 printed-circuit board. |
(3) |
Tj = 25 |
°C; maximum values. |
Fig.2 Maximum permissible continuous forward |
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Fig.3 Forward current as a function of |
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current as a function of ambient temperature. |
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forward voltage. |
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 04 |
4 |
Philips Semiconductors |
Product specification |
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High-speed double diode |
BAW56W |
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10 |
5 |
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MGA884 |
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2.5 |
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MBH191 |
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handbook, halfpage |
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IR |
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(nA) |
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2.0 |
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104 |
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VR = 75 V |
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1.5 |
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103 |
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max |
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75 |
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102 |
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25 V |
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0.5 |
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Tj |
( o C) |
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VR (V) |
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f = 1 MHz; Tj = 25 °C. |
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Fig.5 |
Reverse current as a function of |
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Fig.6 |
Diode capacitance as a function of reverse |
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junction temperature. |
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voltage; typical values. |
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1996 Apr 04 |
5 |