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Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

MSA860

IFRM

(A)

10
10			δ = 0.05
8			δ = 0.05


6
6			0.1
4

			0.2

2			0.5



0			1


10 2	10 1	1	10	10 2	10 3	t p (ms)	10 4

BYV26A to E.

Ttp = 85°C; Rth j-tp = 46 K/W.

VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.

Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

10								MLB535
10
I FRM				δ = 0.05
(A)				δ = 0.05
8
6				0.1
6
4				0.2
4
				0.5
2
				1
0	2	10 1	1	10	10 2	10 3		10 4
10	2	10 1	1	10	10 2	10 3	t p (ms)	10 4

BYV26F and G.

Ttp = 85°C; Rth j-tp = 46 K/W.

VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.

Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 May 30 6

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

MSA859

6
6
I FRM
(A)			δ = 0.05
5
5
4

			0.1
			0.1
3
3			0.2
2			0.2

			0.5
			0.5
1			1
1
0


10 2	10 1	1	10	10 2	10 3	t p (ms)	10 4

BYV26A to E

Tamb = 60 °C; Rth j-a = 100 K/W.

VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1000 V.

Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

8								MLB536
8
I FRM
(A)
6			δ = 0.05
4			0.1
4
			0.2
2
			0.5
			1
0	2	10 1	1	10	10 2	10 3		10 4
10	2	10 1	1	10	10 2	10 3	t p (ms)	10 4
BYV26F and G
Tamb = 60 °C; Rth j-a = 100 K/W.
VRRMmax during 1 − δ; curves include derating for Tj max at VRRM = 1400 V.

Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

1996 May 30 7

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

MSA854

(W)

a = 3 2.5 2 1.57

1.42

0	0.5	I F(AV) (A)	1
		I F(AV) (A)

BYV26A to E

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.

Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

3				MLB532
3
P
(W)
2		a = 3	2.5	2
2				1.57
				1.57
				1.42
1
0
0	0.5	I F(AV) (A)		1
		I F(AV) (A)

BYV26F and G

a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.

Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.

MSA857

200 handbook, halfpage

T j (oC)

100

0	400	800	V R	(V)	1200
			V R	(V)

BYV26A to E

Solid line = VR.

Dotted line = VRRM; δ = 0.5.

Fig.12 Maximum permissible junction temperature as a function of reverse voltage.

MLB599

200 handbook, halfpage

T j ( oC)

100

F G

0	1000	VR (V)	2000
		VR (V)

BYV26F and G

Solid line = VR.

Dotted line = VRRM; δ = 0.5.

Fig.13 Maximum permissible junction temperature as a function of reverse voltage.

1996 May 30

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

8				MSA853
8
handbook, halfpage
IF
(A)
6
4
2
0
0	2	4	6	8
				VF (V)

BYV26A to E

Dotted line: Tj = 175 °C.

Solid line: Tj = 25 °C.

Fig.14 Forward current as a function of forward voltage; maximum values.

MBD427

8 handbook, halfpage

(A)

VF (V)

BYV26F and G

Dotted line: Tj = 175 °C.

Solid line: Tj = 25 °C.

Fig.15 Forward current as a function of forward voltage; maximum values.

103	MGC550

handbook, halfpage

(μA)

102

0	100	Tj (°C)	200
		Tj (°C)

VR = VRRMmax.

Fig.16 Reverse current as a function of junction temperature; maximum values.

10	2			MSA858
10	2
handbook, halfpage
Cd
(pF)
		BYV26A,B,C
10
		BYV26D,E
	1		102		103
	1	10	102	V R (V)	103
				V R (V)
BYV26A to E
f = 1 MHz; Tj = 25 °C.

Fig.17 Diode capacitance as a function of reverse voltage, typical values.

1996 May 30

Philips Semiconductors	Product speciﬁcation

Fast soft-recovery

BYV26 series

controlled avalanche rectiﬁers

10	2				MBD437	50
10	2					50
handbook, halfpage						handbook, halfpage
						handbook, halfpage
						25
C d
(pF)
						7
						50
10
						2
	1					3
	1		102	10 3		4
	1	10	102	10 3	10	4
					VR (V)	MGA200
					VR (V)

BYV26F and G
f = 1 MHz; Tj = 25 °C.
	Dimensions in mm.
Fig.18 Diode capacitance as a function of reverse
voltage, typical values.	Fig.19 Device mounted on a printed-circuit board.

handbook, full pagewidth	DUT	IF
		(A)
	+	0.5	t rr
10 Ω	25 V		t rr
		1 Ω
	50 Ω	0
		0.25	t
		0.25
		0.5
		IR
		(A)	MAM057
		1	MAM057
		1

Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.

Source impedance: 50 Ω; tr ≤ 15 ns.

Fig.20 Test circuit and reverse recovery time waveform and definition.

1996 May 30

Источник: https://studfile.net/preview/16504084/

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