Материал: 9726
DISCRETE SEMICONDUCTORS
book, halfpage
M3D050
1N4531; 1N4532
High-speed diodes
Product specification |
1996 Apr 03 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed diodes |
1N4531; 1N4532 |
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FEATURES
∙Hermetically sealed leaded glass SOD68 (DO-34) package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 75 V
∙Repetitive peak reverse voltage: max. 75 V
∙Repetitive peak forward current: max. 450 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙High-speed switching
∙Protection diodes in reed relays.
DESCRIPTION
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
k |
a |
handbook, halfpage |
MAM156
The diodes are type branded.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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− |
75 |
V |
VR |
continuous reverse voltage |
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− |
75 |
V |
IF |
continuous forward current |
see Fig.2 |
− |
200 |
mA |
IFRM |
repetitive peak forward current |
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− |
450 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
− |
4 |
A |
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t = 1 ms |
− |
1 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C |
− |
500 |
mW |
Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
junction temperature |
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− |
200 |
°C |
1996 Apr 03 |
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Philips Semiconductors |
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Product specification |
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High-speed diodes |
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1N4531; 1N4532 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 10 mA; see Fig.3 |
− |
1000 |
mV |
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IR |
reverse current |
see Fig.5 |
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IN4531 |
VR = 20 V |
− |
25 |
nA |
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VR = 20 V; Tj = 150 °C |
− |
50 |
μA |
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IN4532 |
VR = 50 V |
− |
100 |
nA |
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VR = 50 V; Tj = 150 °C |
− |
100 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
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IN4531 |
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4 |
pF |
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IN4532 |
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2 |
pF |
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trr |
reverse recovery time |
when switched from IF = 10 mA to |
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IN4531 |
IR = 60 mA; RL = 100 Ω; |
− |
4 |
ns |
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IN4532 |
measured at IR = 1 mA; see Fig.7 |
− |
2 |
ns |
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reverse recovery time |
when switched from IF = 10 mA to |
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IN4532 |
IR = 10 mA; RL = 100 Ω; |
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4 |
ns |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 100 mA; |
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3 |
V |
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tr ≤ 30 ns; see Fig.8 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length 5 mm |
120 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
lead length 5 mm; note 1 |
350 |
K/W |
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Apr 03 |
3 |
Philips Semiconductors |
Product specification |
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High-speed diodes |
1N4531; 1N4532 |
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GRAPHICAL DATA |
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300 |
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MBG450 |
600 |
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MBG458 |
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handbook, halfpage |
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handbook, halfpage |
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IF |
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IF |
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(mA) |
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(mA) |
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200 |
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400 |
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(1) |
(2) |
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(3) |
100 |
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200 |
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0 |
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o |
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0 |
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0 |
100 |
Tamb |
C) |
200 |
0 |
1 |
VF |
(V) |
2 |
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( |
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(1) |
Tj = 175 °C; typical values. |
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(2) |
Tj = 25 |
°C; typical values. |
Lead length 5 mm. |
(3) |
Tj = 25 |
°C; maximum values. |
Fig.2 Maximum permissible continuous forward |
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Fig.3 Forward current as a function of |
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current as a function of ambient temperature. |
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forward voltage. |
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 03 |
4 |
Philips Semiconductors |
Product specification |
|
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High-speed diodes |
1N4531; 1N4532 |
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103 |
MGD010 |
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handbook, halfpage
IR
(μA) 102
10
1
10−1
10−2
0 |
100 |
200 |
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Tj |
(oC) |
VR = 50 V
Solid line; maximum values.
Dotted line; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD004
1.2 handbook, halfpage
Cd (pF)
1.0
0.8
0.6
0.4
0 |
10 |
VR |
(V) |
20 |
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f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
1996 Apr 03 |
5 |