Материал: 9727
DISCRETE SEMICONDUCTORS
M3D176
1N914; 1N916
High-speed diodes
Product specification |
1996 Apr 10 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed diodes |
1N914; 1N916 |
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FEATURES
∙Hermetically sealed leaded glass SOD27 (DO-35) package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 75 V
∙Repetitive peak reverse voltage: max. 100 V
∙Repetitive peak forward current: max. 225 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙ High-speed switching.
DESCRIPTION
The 1N914; 1N916 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages.
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handbook, halfpage |
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MAM246
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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100 |
V |
VR |
continuous reverse voltage |
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75 |
V |
IF |
continuous forward current |
see Fig.2; note 1 |
− |
75 |
mA |
IFRM |
repetitive peak forward current |
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− |
225 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
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4 |
A |
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t = 1 ms |
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1 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
junction temperature |
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− |
175 |
°C |
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1996 Apr 10 |
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Philips Semiconductors |
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Product specification |
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High-speed diodes |
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1N914; 1N916 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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VF |
forward voltage |
IF = 10 mA; see Fig.3 |
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1000 |
mV |
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IR |
reverse current |
see Fig.5 |
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VR = 20 V |
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25 |
nA |
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VR = 75 V |
− |
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5 |
μA |
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VR = 20 V; Tj = 150 °C |
− |
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50 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
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1N914 |
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− |
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4 |
pF |
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1N916 |
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− |
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2 |
pF |
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trr |
reverse recovery time |
when switched from IF = 10 mA to |
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1N914 |
IR = 10 mA; RL = 100 Ω; |
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8 |
ns |
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measured at IR = 1 mA; see Fig.7 |
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reverse recovery time |
when switched from IF = 10 mA to |
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4 |
ns |
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IR = 60 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 50 mA; |
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2.5 |
V |
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tr = 20 ns; see Fig.8 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length 10 mm |
240 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
lead length 10 mm; note 1 |
500 |
K/W |
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Apr 10 |
3 |
Philips Semiconductors |
Product specification |
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High-speed diodes |
1N914; 1N916 |
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GRAPHICAL DATA |
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100 |
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MGD289 |
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MBG464 |
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600 |
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handbook, halfpage |
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IF |
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IF |
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(mA) |
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(mA) |
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400 |
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50 |
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(1) |
(2) |
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(3) |
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200 |
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0 |
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0 |
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0 |
100 |
Tamb (oC) |
200 |
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0 |
1 |
V |
F |
(V) |
2 |
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(1) |
Tj = 175 °C; typical values. |
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(2) |
Tj = 25 |
°C; typical values. |
Device mounted on an FR4 printed-circuit board; lead length 10 mm. |
(3) |
Tj = 25 |
°C; maximum values. |
Fig.2 Maximum permissible continuous forward |
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Fig.3 Forward current as a function of |
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current as a function of ambient temperature. |
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forward voltage. |
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 10 |
4 |
Philips Semiconductors |
Product specification |
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High-speed diodes |
1N914; 1N916 |
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103 |
MGD006 |
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handbook, halfpage
IR
(μA) 102
(1) |
(2) |
(3) |
10
1
10−1
10−2
0 |
100 |
200 |
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Tj |
(oC) |
(1)VR = 75 V; maximum values.
(2)VR = 75 V; typical values.
(3)VR = 20 V; typical values.
Fig.5 Reverse current as a function of junction temperature.
MGD004
1.2 handbook, halfpage
Cd (pF)
1.0
0.8
0.6
0.4
0 |
10 |
VR |
(V) |
20 |
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f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
1996 Apr 10 |
5 |