Материал: 9735
DISCRETE SEMICONDUCTORS
book, halfpage
M3D088
BAL99
High-speed diode
Product specification |
1996 Apr 03 |
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed diode |
BAL99 |
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FEATURES
∙Small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 70 V
∙Repetitive peak reverse voltage: max. 70 V
∙Repetitive peak forward current: max. 500 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAL99 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package.
PINNING
PIN |
DESCRIPTION |
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1 |
not connected |
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2 |
cathode |
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3 |
anode |
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handbook, |
2 |
1 |
2 
1 n.c.
3
3 |
MAM231 |
Marking code: JFp.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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70 |
V |
VR |
continuous reverse voltage |
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70 |
V |
IF |
continuous forward current |
see Fig.2; note 1 |
− |
215 |
mA |
IFRM |
repetitive peak forward current |
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− |
500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
− |
4 |
A |
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t = 1 ms |
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1 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 03 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed diode |
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BAL99 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
− |
715 |
mV |
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IF = 10 mA |
− |
855 |
mV |
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IF = 50 mA |
− |
1 |
V |
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IF = 150 mA |
− |
1.25 |
V |
IR |
reverse current |
see Fig.5 |
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VR = 25 V |
− |
30 |
nA |
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VR = 70 V |
− |
1 |
μA |
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VR = 25 V; Tj = 150 °C |
− |
30 |
μA |
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VR = 70 V; Tj = 150 °C; |
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50 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
− |
1.5 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
− |
4 |
ns |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 10 mA; |
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1.75 |
V |
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tr = 20 ns; see Fig.8 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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360 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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500 |
K/W |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 03 |
3 |
Philips Semiconductors |
Product specification |
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High-speed diode |
BAL99 |
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GRAPHICAL DATA |
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MSA562 -1
250
IF (mA)
200
150
100
50
0
0 |
50 |
100 |
150 |
200 |
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Tamb (oC) |
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Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
MBG382
300 handbook, halfpage
IF (mA)
(1) |
(2) |
(3) |
200
100
0
0 |
1 |
VF |
(V) |
2 |
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(1)Tj = 150 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage.
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 03 |
4 |
Philips Semiconductors |
Product specification |
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High-speed diode |
BAL99 |
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105 |
MBH182 |
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IR (nA)
104 |
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(1) |
(2) |
(3) |
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103 |
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102
10
0 |
100 |
Tj (oC) |
200 |
(1)VR = 70 V; maximum values.
(2)VR = 70 V; typical values.
(3)VR = 25 V; typical values.
Fig.5 Reverse current as a function of junction temperature.
MBG446
0.8 handbook, halfpage
Cd (pF)
0.6
0.4
0.2
0
0 |
4 |
8 |
12 VR (V) 16 |
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse voltage; typical values.
1996 Apr 03 |
5 |