Материал: 9745
DISCRETE SEMICONDUCTORS
book, halfpage
M3D088
PMBD2835; PMBD2836
High-speed double diodes
Product specification |
1996 Apr 04 |
Supersedes data of November 1993
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed double diodes |
PMBD2835; PMBD2836 |
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FEATURES
∙Small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 35 V and 75 V respectively
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 450 mA
∙Forward voltage: max. 1 V.
APPLICATIONS
∙High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The PMD2835, PMD2836 consist of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages.
MARKING
TYPE NUMBER
MARKING
CODE
PMBD2835 pA3
PMBD2836 pA2
PINNING
PIN |
DESCRIPTION |
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1 |
cathode (k1) |
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2 |
cathode (k2) |
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3 |
common anode |
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handbook, 4 columns |
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2 
1
3
3
MAM206
Top view
Fig.1 Simplified outline (SOT23) and symbol.
1996 Apr 04 |
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Philips Semiconductors |
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Product specification |
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High-speed double diodes |
PMBD2835; PMBD2836 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VRRM |
repetitive peak reverse voltage |
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PMBD2835 |
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85 |
V |
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PMBD2836 |
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85 |
V |
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VR |
continuous reverse voltage |
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PMBD2835 |
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35 |
V |
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PMBD2836 |
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75 |
V |
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IF |
continuous forward current |
single diode loaded; see Fig.2; |
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215 |
mA |
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note 1 |
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double diode loaded; see Fig.2; |
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125 |
mA |
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note 1 |
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IFRM |
repetitive peak forward current |
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450 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
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4 |
A |
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t = 1 ms |
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1 |
A |
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t = 1 s |
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0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 04 |
3 |
Philips Semiconductors |
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Product specification |
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High-speed double diodes |
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PMBD2835; PMBD2836 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
MAX. |
UNIT |
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Per diode |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
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715 |
mV |
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IF = 10 mA |
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855 |
mV |
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IF = 50 mA |
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1 |
V |
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IF = 150 mA |
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1.25 |
V |
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IR |
reverse current |
see Fig.5 |
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PMBD2835 |
VR = 30 V |
− |
100 |
nA |
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VR = 30 V; Tj = 150 °C; |
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40 |
μA |
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PMBD2836 |
VR = 50 V |
− |
100 |
nA |
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VR = 50 V; Tj = 150 °C |
− |
50 |
μA |
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Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
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2.5 |
pF |
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trr |
reverse recovery time |
when switched from IF = 10 mA to |
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4 |
ns |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 10 mA; |
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1.75 |
V |
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tr = 20 ns; see Fig.8 |
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THERMAL CHARACTERISTICS |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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360 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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500 |
K/W |
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Note
1. Device mounted on an FR4 printed-circuit board.
1996 Apr 04 |
4 |
Philips Semiconductors |
Product specification |
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High-speed double diodes |
PMBD2835; PMBD2836 |
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GRAPHICAL DATA |
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MBD033
300
I F (mA)
200
single diode loaded
double diode loaded
100
0
0 |
100 |
Tamb ( oC) |
200 |
Device mounted on an FR4 printed-circuit board.
Fig.2 Maximum permissible continuous forward current as a function of ambient temperature.
MBG382
300 handbook, halfpage
IF (mA)
(1) |
(2) |
(3) |
200
100
0
0 |
1 |
VF |
(V) |
2 |
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(1)Tj = 150 °C; typical values.
(2)Tj = 25 °C; typical values.
(3)Tj = 25 °C; maximum values.
Fig.3 Forward current as a function of forward voltage.
MBG704
102 handbook, full pagewidth
IFSM
(A)
10
1
10−1
1 |
10 |
102 |
103 |
tp (μs) |
104 |
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Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Apr 04 |
5 |