Материал: 9862
DISCRETE SEMICONDUCTORS
book, halfpage
M3D122
BAS11; BAS12
Controlled avalanche rectifiers
Product specification |
1996 Jun 11 |
Supersedes data of April 1992
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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Controlled avalanche rectifiers |
BAS11; BAS12 |
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FEATURES
·Glass passivated
·High maximum operating temperature
·Low leakage current
·Excellent stability
·Available in ammo-pack.
DESCRIPTION
Rectifier diodes in cavity free cylindrical SOD91 glass packages, incorporating Implotecä(1) technology.
(1) Implotec is a trademark of Philips.
These packages are hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
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k |
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a |
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MAM196 |
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Marking code BAS11: S11. |
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Marking code BAS12: S12. |
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Fig.1 Simplified outline (SOD91) and symbol. |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
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MAX. |
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UNIT |
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VRRM |
repetitive peak reverse voltage |
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BAS11 |
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- |
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300 |
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V |
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BAS12 |
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- |
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400 |
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V |
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VRWM |
working reverse voltage |
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BAS11 |
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- |
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300 |
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V |
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BAS12 |
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- |
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400 |
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V |
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VR |
continuous reverse voltage |
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BAS11 |
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300 |
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V |
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BAS12 |
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400 |
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V |
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IF(AV) |
average forward current |
averaged over any 20 ms period; |
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350 |
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mA |
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Ttp = 75 °C; lead length = 10 mm; |
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see Figs 2 and 4 |
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averaged over any 20 ms period; |
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300 |
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mA |
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Tamb = 30 °C; PCB mounting |
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(see Fig.8); see Figs 3 and 4 |
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IFSM |
non-repetitive peak forward current |
t = 10 ms half sinewave; |
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4 |
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A |
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Tj = Tj max prior to surge; |
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VR = VRRMmax |
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PRRM |
repetitive peak reverse power |
t = 10 ms square wave; f = 50 Hz; |
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75 |
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W |
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dissipation |
Tamb = 25 °C |
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Tstg |
storage temperature |
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-65 |
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+150 |
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°C |
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Tj |
junction temperature |
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-65 |
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+150 |
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°C |
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1996 Jun 11 |
2 |
Philips Semiconductors |
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Product specification |
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Controlled avalanche rectifiers |
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BAS11; BAS12 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
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MAX. |
UNIT |
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VF |
forward voltage |
IF = 300 mA; Tj = Tjmax; see Fig.5 |
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1.0 |
V |
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IF = 300 mA; see Fig.5 |
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1.1 |
V |
V(BR)R |
reverse avalanche |
IR = 0.1 mA |
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breakdown voltage |
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BAS11 |
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330 |
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V |
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BAS12 |
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440 |
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V |
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IR |
reverse current |
VR = VRRMmax; see Fig.6 |
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250 |
nA |
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VR = VRRMmax; Tj = 125 °C; see Fig.6 |
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10 |
mA |
trr |
reverse recovery time |
when switched from IF = 0.5 A to |
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1 |
ms |
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IR = 1 A; measured at IR = 0.25 A; |
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see Fig.9 |
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Cd |
diode capacitance |
VR = 0 V; f = 1 MHz; see Fig.7 |
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20 |
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pF |
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
lead length = 10 mm |
180 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
340 |
K/W |
Note
1.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm, see Fig.8. For more information please refer to the “General Part of Handbook SC01”.
1996 Jun 11 |
3 |
Philips Semiconductors |
Product specification |
|
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Controlled avalanche rectifiers |
BAS11; BAS12 |
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|
GRAPHICAL DATA
MGD293
0.6 handbook, halfpage
IF(AV)
(A)
0.4
0.2
0 |
40 |
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200 |
0 |
80 |
120 |
160 |
Ttp (oC)
Lead length 10 mm.
a = 1.57; VR = VRRMmax; δ = 0.5.
Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MGD295
0.4 handbook, halfpage
IF(AV)
(A)
0.3
0.2
0.1
0
0 40 80 120 160 200 Tamb (°C)
Device mounted as shown in Fig.8. a = 1.57; VR = VRRMmax; δ = 0.5.
Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
0.5 |
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MGD292 |
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handbook, halfpage |
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P |
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(W) |
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0.4 |
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a = 3 |
2.5 |
2 |
1.57 |
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1.42 |
0.3 |
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0.2 |
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0.1 |
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0 |
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0 |
0.1 |
0.2 |
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0.3 |
0.4 |
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IF(AV)(A) |
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5. |
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Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
MGD294
5 handbook, halfpage
IF
(A)
4
3
2
1
0
0 |
1 |
2 |
3 |
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VF (V) |
Solid line: Tj = 25 °C.
Dotted line: Tj = 150 °C.
Fig.5 Forward current as a function of forward voltage; maximum values.
1996 Jun 11 |
4 |
Philips Semiconductors |
Product specification |
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Controlled avalanche rectifiers |
BAS11; BAS12 |
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MGD297
102 handbook, halfpage
IR
(μA)
10
1
10−1
0 |
50 |
100 |
150 |
200 |
Tj (oC)
VR = VRRMmax.
Fig.6 Reverse current as a function of junction temperature; maximum values.
50
handbook, halfpage
25
7 
50
MGD296 - 1
10 handbook, halfpage
Cd (pF)
1 |
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10−1 |
1 |
10 |
102 |
VR(V) |
103 |
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f = 1 MHz; Tj = 25 °C.
Fig.7 Diode capacitance as a function of reverse voltage; typical values.
2
3
MGA200
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1996 Jun 11 |
5 |