Материал: 9871
DISCRETE SEMICONDUCTORS
k, halfpage
M3D168
BYG60 series
Fast soft-recovery
controlled avalanche rectifiers
Preliminary specification |
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1996 Jun 05 |
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File under Discrete Semiconductors, SC01 |
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Philips Semiconductors |
Preliminary specification |
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Fast soft-recovery
BYG60 series
controlled avalanche rectifiers
FEATURES
∙Glass passivated
∙High maximum operating temperature
∙Low leakage current
∙Excellent stability
∙Guaranteed avalanche energy absorption capability
∙UL 94V-O classified plastic package
∙Shipped in 12 mm embossed tape.
DESCRIPTION |
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The well-defined void-free case is of a |
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DO-214AC surface mountable |
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transfer-moulded thermo-setting |
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plastic. |
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package with glass passivated chip. |
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handbook, 4 columns |
cathode |
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band |
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Top view |
Side view |
MSA474 |
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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BYG60D |
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− |
200 |
V |
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BYG60G |
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− |
400 |
V |
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BYG60J |
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− |
600 |
V |
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BYG60K |
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− |
800 |
V |
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BYG60M |
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− |
1000 |
V |
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VR |
continuous reverse voltage |
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BYG60D |
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− |
200 |
V |
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BYG60G |
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− |
400 |
V |
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BYG60J |
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− |
600 |
V |
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BYG60K |
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− |
800 |
V |
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BYG60M |
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− |
1000 |
V |
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IF(AV) |
average forward current |
averaged over any 20 ms period; |
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1.90 |
A |
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Ttp = 100 °C; see Fig.2 |
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averaged over any 20 ms period; |
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0.90 |
A |
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Al2O3 PCB mounting (see Fig.7); |
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Tamb = 60 °C; see Fig.3 |
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averaged over any 20 ms period; |
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0.65 |
A |
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epoxy PCB mounting (see Fig.7); |
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Tamb = 60 °C; see Fig.3 |
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IFSM |
non-repetitive peak forward current |
t = 10 ms half sine wave; |
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25 |
A |
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Tj = Tj max prior to surge; |
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VR = VRRMmax |
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1996 Jun 05 |
2 |
Philips Semiconductors Preliminary specification
Fast soft-recovery |
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BYG60 series |
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controlled avalanche rectifiers |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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ERSM |
non-repetitive peak reverse |
L = 120 mH; Tj = Tj max prior to |
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avalanche energy |
surge; inductive load switched off |
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BYG60D to J |
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10 |
mJ |
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BYG60K and M |
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7 |
mJ |
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Tstg |
storage temperature |
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-65 |
+175 |
°C |
Tj |
junction temperature |
see Fig.4 |
-65 |
+175 |
°C |
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
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CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
forward voltage |
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IF = 1 A; Tj = Tj max; see Fig.5 |
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0.98 |
V |
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IF = 1 A; see Fig.5 |
- |
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1.20 |
V |
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V(BR)R |
reverse avalanche |
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IR = 0.1 mA |
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breakdown voltage |
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BYG60D |
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300 |
- |
- |
V |
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BYG60G |
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500 |
- |
- |
V |
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BYG60J |
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700 |
- |
- |
V |
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BYG60K |
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900 |
- |
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V |
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BYG60M |
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1100 |
- |
- |
V |
IR |
reverse current |
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VR = VRRMmax; |
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5 |
mA |
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see Fig.6 |
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VR = VRRMmax; Tj = 165 °C; |
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100 |
mA |
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see Fig.6 |
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trr |
reverse recovery time |
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when switched from IF = 0.5 A to |
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BYG60D to J |
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IR = 1 A; measured at IR = 0.25 A; |
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- |
250 |
ns |
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BYG60K and M |
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see Fig.8 |
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- |
300 |
ns |
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Cd |
diode capacitance |
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VR = 0 V; f = 1 MHz |
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BYG60D to J |
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30 |
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pF |
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BYG60K and M |
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25 |
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pF |
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THERMAL CHARACTERISTICS |
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SYMBOL |
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PARAMETER |
CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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25 |
K/W |
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Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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100 |
K/W |
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note 2 |
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150 |
K/W |
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Notes
1.Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ³35 mm, see Fig.7.
2.Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ³40 mm, see Fig.7. For more information please refer to the ‘General Part of Handbook SC01’.
1996 Jun 05 |
3 |
Philips Semiconductors |
Preliminary specification |
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|
Fast soft-recovery
BYG60 series
controlled avalanche rectifiers
GRAPHICAL DATA
MGD481
4 handbook, halfpage
IF(AV)
(A)
3
2
1
0
0 |
100 |
200 |
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Ttp (°C) |
VR = VRRMmax; δ = 0.5; a = 1.57.
Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MGD482
1.6 handbook, halfpage
IF(AV)
(A)
1.2
0.8
0.4
0
0 |
100 |
200 |
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Tamb (°C) |
VR = VRRMmax; δ = 0.5; a = 1.57 Device mounted as shown in Fig.7;
solid line: Al2O3 PCB; dotted line: epoxy PCB.
Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
MGD483
200 handbook, halfpage
Tj (°C)
160
120
80
D |
G |
J |
K |
M |
40
0
0 |
400 |
800 |
1200 |
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VR (V) |
Device mounted as shown in Fig.7
Solid line: Al2O3 PCB
Dotted line: epoxy PCB.
Fig.4 Maximum permissible junction temperature as a function of reverse voltage.
MGD484
10 handbook, halfpage
IF
(A)
8
6
4
2
0
0 |
1 |
2 |
3 |
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VF (V) |
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Fig.5 Forward current as a function of forward voltage; maximum values.
1996 Jun 05 |
4 |
Philips Semiconductors |
Preliminary specification |
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Fast soft-recovery
BYG60 series
controlled avalanche rectifiers
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3 |
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MGC532 |
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10 |
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handbook, halfpage |
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50 |
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IR |
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(μA) |
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10 |
2 |
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4.5 |
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50 |
10 |
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2.5 |
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1 |
0 |
100 |
1.25 |
MSB213 |
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200 |
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Tj (oC) |
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VR = VRMMmax. |
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Dimensions in mm. |
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Material: AL2O3 or epoxy-glass. |
Fig.6 Reverse current as a function of junction |
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temperature; maximum values. |
Fig.7 Printed-circuit board for surface mounting. |
handbook, full pagewidth |
DUT |
IF |
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(A) |
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0.5 |
t rr |
10 Ω |
25 V |
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1 Ω |
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50 Ω |
0 |
t |
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0.25 |
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0.5 |
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IR |
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(A) |
MAM057 |
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1 |
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Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
1996 Jun 05 |
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