Материал: BAS16
DISCRETE SEMICONDUCTORS
book, halfpage
M3D088
BAS16
High-speed diode
Product specification |
1996 Sep 10 |
Supersedes data of April 1996
File under Discrete Semiconductors, SC01
Philips Semiconductors |
Product specification |
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High-speed diode |
BAS16 |
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FEATURES
∙Small plastic SMD package
∙High switching speed: max. 4 ns
∙Continuous reverse voltage: max. 75 V
∙Repetitive peak reverse voltage: max. 85 V
∙Repetitive peak forward current: max. 500 mA.
APPLICATIONS
∙High-speed switching in hybrid thick and thin-film circuits.d
LIMITING VALUES
DESCRIPTION
The BAS16 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small plastic SMD SOT23 package.
PINNING
PIN |
DESCRIPTION |
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anode |
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2 |
not connected |
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3 |
cathode |
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handbook, halfpage2 |
1 |
2 
1 n.c.
3
3 |
MAM185 |
Marking code: A6p.
Fig.1 Simplified outline (SOT23) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VRRM |
repetitive peak reverse voltage |
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85 |
V |
VR |
continuous reverse voltage |
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75 |
V |
IF |
continuous forward current |
see Fig.2; note 1 |
− |
215 |
mA |
IFRM |
repetitive peak forward current |
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500 |
mA |
IFSM |
non-repetitive peak forward current |
square wave; Tj = 25 °C prior to |
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surge; see Fig.4 |
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t = 1 μs |
− |
4 |
A |
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t = 1 ms |
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1 |
A |
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t = 1 s |
− |
0.5 |
A |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
Tj |
junction temperature |
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− |
150 |
°C |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 |
2 |
Philips Semiconductors |
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Product specification |
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High-speed diode |
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BAS16 |
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ELECTRICAL CHARACTERISTICS |
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Tj = 25 °C; unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VF |
forward voltage |
see Fig.3 |
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IF = 1 mA |
− |
715 |
mV |
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IF = 10 mA |
− |
855 |
mV |
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IF = 50 mA |
− |
1 |
V |
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IF = 150 mA |
− |
1.25 |
V |
IR |
reverse current |
see Fig.5 |
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VR = 25 V |
− |
30 |
nA |
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VR = 75 V |
− |
1 |
μA |
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VR = 25 V; Tj = 150 °C |
− |
30 |
μA |
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VR = 75 V; Tj = 150 °C |
− |
50 |
μA |
Cd |
diode capacitance |
f = 1 MHz; VR = 0; see Fig.6 |
− |
1.5 |
pF |
trr |
reverse recovery time |
when switched from IF = 10 mA to |
− |
4 |
ns |
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IR = 10 mA; RL = 100 Ω; |
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measured at IR = 1 mA; see Fig.7 |
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Vfr |
forward recovery voltage |
when switched from IF = 10 mA; |
− |
1.75 |
V |
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tr = 20 ns; see Fig.8 |
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THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
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CONDITIONS |
VALUE |
UNIT |
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Rth j-tp |
thermal resistance from junction to tie-point |
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330 |
K/W |
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
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500 |
K/W |
Note
1. Device mounted on an FR4 printed-circuit board.
1996 Sep 10 |
3 |
Philips Semiconductors |
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Product specification |
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High-speed diode |
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BAS16 |
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GRAPHICAL DATA |
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250 |
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MSA562 -1 |
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300 |
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MBG382 |
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handbook, halfpage |
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IF |
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IF |
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(mA) |
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(mA) |
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(1) |
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(2) |
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(3) |
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150 |
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0 |
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50 |
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100 |
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150 |
200 |
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0 |
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VF (V) |
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Tamb (oC) |
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(1) Tj = 150 °C; typical values. |
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(2) Tj = 25 °C; typical values. |
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Device mounted on an FR4 printed-circuit board. |
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(3) Tj = 25 °C; maximum values. |
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Fig.2 Maximum permissible continuous forward |
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Fig.3 |
Forward current as a function of |
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current as a function of ambient temperature. |
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forward voltage. |
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MBG704 |
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handbook, full |
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(A) |
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10−1 |
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102 |
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tp (μs) |
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Based on square wave currents. |
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Tj = 25 °C prior to surge. |
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Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 10 |
4 |
Philips Semiconductors |
Product specification |
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High-speed diode |
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105 |
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handbook, halfpage |
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IR |
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(nA) |
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104 |
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VR = 75 V |
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0.6 |
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0.4 |
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102 |
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25 V |
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0.2 |
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10 |
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0 |
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100 |
Tj ( o C) |
200 |
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0 |
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4 |
8 |
12 VR (V) 16 |
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f = 1 MHz; Tj = 25 °C. |
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Fig.5 |
Reverse current as a function of |
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Fig.6 Diode capacitance as a function of reverse |
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junction temperature. |
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voltage; typical values. |
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1996 Sep 10 |
5 |