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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BD789/D

Complementary Plastic Silicon

Power Transistors

. . . designed for low power audio amplifier and low±current, high speed switching applications.

• High Collector±Emitter Sustaining Voltage Ð

VCEO(sus) = 80 Vdc (Min) Ð BD789, BD790

VCEO(sus) = 100 Vdc (Min) Ð BD791, BD792

• High DC Current Gain @ IC = 200 mAdc

hFE = 40±250

• Low Collector±Emitter Saturation Voltage Ð

VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc

• High Current Gain Ð Bandwidth Product Ð fT = 40 MHz (Min) @ IC = 100 mAdc)

*MAXIMUM RATINGS

		BD789		BD791
Rating	Symbol	BD790		BD792	Unit

Collector±Emitter Voltage	VCEO	80		100	Vdc
Collector±Base Voltage	VCB	80		100	Vdc
Emitter±Base Voltage	VEBO		6.0		Vdc
Collector Current Ð Continuous	IC		4.0		Adc
Ð Peak			8.0

Base Current	IB		1.0		Adc
Total Power Dissipation @ TC = 25_C	PD		15		Watts
Derate above 25_C			0.12		W/_C

Operating and Storage Junction	TJ,Tstg	± 65 to +150			_C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	8.34	_C/W

NPN

BD789

BD791*

PNP

BD790

BD792*

*Motorola Preferred Device

4 AMPERE

POWER TRANSISTORS COMPLEMENTARY SILICON

80, 100 VOLTS

15 WATTS

CASE 77±08

TO±225AA TYPE

		16							1.6
	POWERDISSIPATION (WATTS)									P
										D
		12							1.2	DISSIPATION POWER ,
C		8.0							0.8		T
T		8.0							0.8		A
T		4.0							0.4		A
	,									(WATTS)
	D
	P
		0							0
		20	40	60	80	100	120	140	160

T, TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995

BD789		BD791	BD790	BD792
	*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

				Characteristic		Symbol	Min	Max	Unit

	OFF CHARACTERISTICS

	Collector±Emitter Sustaining Voltage (1)					VCEO(sus)			Vdc
	(IC = 10 mAdc, IB = 0)				BD789, BD790		80	Ð
					BD791, BD792		100	Ð

	Collector Cutoff Current					ICEO			μAdc
	(VCE = 40 Vdc, IB = 0)				BD789, BD790		Ð	100
	(VCE = 50 Vdc, IB = 0)				BD791, BD792		Ð	100
	Collector Cutoff Current					ICEX
	(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)				BD789, BD790		Ð	1.0	μAdc
	(VCE = 100 Vdc, VBE(off) = 1.5 Vdc)				BD791, BD792		Ð	1.0
	(VCE = 40 Vdc, VBE(off) = 1 5 Vdc, TC = 125_C)				BD789, BD790		Ð	0.1	mAdc
	(VCE = 50 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)				BD791, BD792		Ð	0.1
	Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)					IEBO	Ð	1.0	μAdc
	ON CHARACTERISTICS (1)

	DC Current Gain					hFE			Ð
	(IC = 200 mAdc, VCE = 3 0 Vdc)						40	250
	(IC = 1.0 Adc, VCE = 3.0 Vdc)						20	Ð
	(IC = 2.0 Adc, VCE = 3.0 Vdc)						10	Ð
	(IC = 4.0 Adc, VCE = 3.0 Vdc)						5.0	Ð
	Collector Emitter Saturation Voltage					VCE(sat)			Vdc
	(IC = 500 mAdc, IB = 50 mAdc)						Ð	0.5
	(IC = 1.0 Adc, IB = 100 mAdc)						Ð	1.0
	(IC = 2.0 Adc, IB = 200 mAdc)						Ð	2.5
	(IC = 4.0 Adc, IB = 800 mAdc)						Ð	3.0
	Base±Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc)					VBE(sat)	Ð	1.8	Vdc
						VBE(sat)	Ð	1.8	Vdc
	Base±Emitter On Voltage (IC = 200 mAdc, VCE = 3.0 Vdc)					VBE(on)	Ð	1.5	Vdc
	DYNAMIC CHARACTERISTICS

	Current±Gain Ð Bandwidth Product					fT	40	Ð	MHz
	(IC = 100 mAdc, VCE = 10 Vdc, f = 10 MHz)
	Output Capacitance					Cob			pF
	(VCB = 10 Vdc, IC = 0, f = 0.1 MHz)				BD789, BD791		Ð	50
					BD790, BD792		Ð	70

	Small±Signal Current Gain					hfe	10	Ð	Ð
	(IC = 200 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

* Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

+ 30 V

500

25 μs

VCC

300

TJ = 25°C

200

= 30 V

+ 11 V

SCOPE

IC/IB = 10

100

(ns)

± 9.0 V

TIMEt,

tr, tf v 10 ns

DUTY CYCLE = 1.0%

± 4 V

td @ VBE(off) = 5.0 V

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

BD789, 791 (NPN)

D1 MUST BE FAST RECOVERY TYPE, eg

7.0

BD790, 792 (PNP)

MBR340 USED ABOVE IB [ 100 mA

5.0

MSD6100 USED BELOW IB [ 100 mA

0.04

0.06 0.1

0.2

0.4

0.6

1.0

2.0

4.0

FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.

IC, COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Turn±On Time

2	Motorola Bipolar Power Transistor Device Data

TRANSIENT THERMAL RESISTANCE	(NORMALIZED)
r(t),

								BD789		BD791	BD790	BD792
1.0
0.7	D = 0.5
0.5
0.3	0.2
0.2	0.1
	0.1
0.1	0.05						P(pk)		RθJC(t) = r(t) RθJC
0.07									RθJC = 8.34°C/W MAX
0.05	0.02						t1		D CURVES APPLY FOR POWER
0.03	0.01						t1		PULSE TRAIN SHOWN
	0.01						t2		READ TIME AT t1
							t2		READ TIME AT t1
0.02	0 (SINGLE PULSE)						DUTY CYCLE, D = t1/t2		TJ(pk) ± TC = P(pk) RθJC(t)
							DUTY CYCLE, D = t1/t2
0.01	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200
0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200
						t, TIME (ms)

Figure 4. Thermal Response

	10
	5.0									100 μs
(AMP)	5.0						1.0 ms
							1.0 ms
	2.0					dc				500 μs
CURRENT	1.0					dc
	1.0		TJ = 150°C
	0.5		TJ = 150°C
				BONDING WIRE LIMITED					5.0 ms
, COLLECTOR				BONDING WIRE LIMITED
				THERMALLY LIMITED @ TC = 25°C
	0.1			(SINGLE PULSE)
	0.1			SECOND BREAKDOWN LIMITED
	0.05			SECOND BREAKDOWN LIMITED
	0.05	CURVES APPLY BELOW RATED VCEO
		CURVES APPLY BELOW RATED VCEO
C
I					BD789 (NPN) BD790 (PNP)
	0.02				BD789 (NPN) BD790 (PNP)
	0.02				BD791 (NPN) BD792 (PNP)
	0.01	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
		1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150_C: TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the limitations imposed by second breakdown.

	2000										200
								°										T	J	= 25°C
	1000							TJ = 25 C											J
	1000							VCC = 30 V			100
	700							IC/IB = 10		(pF)	100				Cib
	500			ts				IB1 = IB2		(pF)					Cib
(ns)TIMEt,				ts						CAPACITANCE	70
(ns)TIMEt,	300									CAPACITANCE


	200										50
											50
	100									C,
	70									C,						Cob
	70					tf					30
	50					tf					30		BD789, 791 (NPN)
	50		BD789, 791 (NPN)								20
			BD789, 791 (NPN)								20
	30		BD790, 792 (PNP)								10		BD790, 792 (PNP)
	20										10	2.0	3.0	5.0	7.0	10	20	30		50	70	100
	0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0		1.0	2.0	3.0	5.0	7.0	10	20	30		50	70	100
	0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0				VR, REVERSE VOLTAGE (VOLTS)
				IC, COLLECTOR CURRENT (AMP)									VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Turn±Off Time

Figure 7. Capacitance

Motorola Bipolar Power Transistor Device Data

BD789		BD791			BD790	BD792
						NPN											NPN
					BD789, BD791											BD790, BD792
	500												200
	300	T			°			V	CE	= 1.0 V									V	CE	= 1.0 V
	300	T	J	= 150 C					CE				100		TJ	= 150°C				CE
	200		J					VCE = 3.0 V					100		TJ	= 150°C			VCE = 3.0 V
								VCE = 3.0 V					70						VCE = 3.0 V
GAIN												GAIN				25°C
																25°C
	100				25°C								50			± 55°C

CURRENT												CURRENT
													30
	70				± 55°C								30
	70
	50
	50												20
													20
DC	30											DC	10
,												,
FE	20											FE	7.0
h												h	5.0


	7.0												3.0
	5.0												2.0
	0.04	0.06	0.1		0.2	0.4	0.6	1.0	2.0		4.0		0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0		4.0
					IC, COLLECTOR CURRENT (AMP)											IC, COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

V, VOLTAGE (VOLTS)

1.4		TJ = 25°C								1.4		TJ = 25°C
1.2		TJ = 25°C										TJ = 25°C
1.2									(VOLTS)	1.2
1.0	VBE(sat) @ IC/IB = 10								(VOLTS)	1.0	VBE(sat) @ IC/IB = 10
1.0										1.0
0.8									VOLTAGE	0.8
0.6	VBE(on) @ VCE = 3.0 V								VOLTAGE	0.6	VBE(on) @ VCE = 3.0 V					IC/IB = 10
0.6	VBE(on) @ VCE = 3.0 V									0.6	VBE(on) @ VCE = 3.0 V
0.4									V,	0.4
					IC/IB = 10				V,
					IC/IB = 10												5.0
0.2							5.0			0.2		VCE(sat)					5.0
0.2	V	CE(sat)								0.2		VCE(sat)
		CE(sat)
0										0
0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0		0.04	0.06	0.1	0.2	0.4	0.6	1.0	2.0	4.0
			IC, COLLECTOR CURRENT (AMP)									IC, COLLECTOR CURRENT (AMP)

Figure 9. ªOnº Voltages

θV, TEMPERATURE COEFFICIENTS (mV/°C)

+ 2.5

(mV/°C)

+ 2.5

*APPLIES

FOR I /I

≤ h

*APPLIES

FOR I

C/IB

≤ hFE/3

+ 2.0

C B

FE/3

+ 2.0

+ 1.5

COEFFICIENTS

+ 1.5

+ 1.0

°C

150

+ 0.5

FOR

150

+ 0.5

θVC FOR

VCE(sat)

CE(sat)

55°

to 25°C

θVB FOR

VBE

55°C

to 25°C

TEMPERATURE,

± 2.0

θVB FOR

VBE

± 55°

C to 25°C

± 0.5

± 1.0

25°C to 150°C

C to

150 C

± 1.5

± 55 C to 25 C

± 2.0

± 2.5

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.04

0.06

0.1

0.2

0.4

0.6

1.0

2.0

4.0

0.04

IC, COLLECTOR CURRENT (AMP)

Figure 10. Temperature Coefficients

4	Motorola Bipolar Power Transistor Device Data

BD789 BD791 BD790 BD792

PACKAGE DIMENSIONS

±B±
U		F	C
Q			M
		±A±	M
		±A±
1	2	3
H		K
		K

V	J
G	R
S	0.25 (0.010) M A M B M
D 2 PL

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.425	0.435	10.80	11.04
B	0.295	0.305	7.50	7.74
C	0.095	0.105	2.42	2.66
D	0.020	0.026	0.51	0.66
F	0.115	0.130	2.93	3.30
G	0.094 BSC		2.39 BSC
H	0.050	0.095	1.27	2.41
J	0.015	0.025	0.39	0.63
K	0.575	0.655	14.61	16.63
M	5	TYP	5	TYP
Q	0.148	0.158	3.76	4.01
R	0.045	0.055	1.15	1.39
S	0.025	0.035	0.64	0.88
U	0.145	0.155	3.69	3.93
V	0.040	±±±	1.02	±±±

0.25 (0.010) M A	M B	M	STYLE 1:
0.25 (0.010) M A	M B	M	PIN 1.	EMITTER
			2.	COLLECTOR
			3.	BASE

CASE 77±08

TO±225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503855/

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