Материал: TIP31ARE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP31A/D
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
• Collector±Emitter Saturation Voltage Ð
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector±Emitter Sustaining Voltage Ð
VCEO(sus) = 60 Vdc (Min) Ð TIP31A, TIP32A
VCEO(sus) = 80 Vdc (Min) Ð TIP31B, TIP32B
VCEO(sus) = 100 Vdc (Min) Ð TIP31C, TIP32C
•High Current Gain Ð Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
•Compact TO±220 AB Package
*MAXIMUM RATINGS
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TIP31A |
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TIP318 |
TIP31C |
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Rating |
Symbol |
TIP32A |
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TIP32B |
TIP32C |
Unit |
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Collector±Emitter Voltage |
VCEO |
60 |
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80 |
100 |
Vdc |
Collector±Base Voltage |
VCB |
60 |
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80 |
100 |
Vdc |
Emitter±Base Voltage |
VEB |
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5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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3.0 |
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Adc |
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Peak |
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5.0 |
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Base Current |
IB |
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1.0 |
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Adc |
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Total Power Dissipation |
PD |
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@ TC = 25_C |
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40 |
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Watts |
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Derate above 25_C |
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0.32 |
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W/_C |
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Total Power Dissipation |
PD |
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@ TA = 25_C |
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2.0 |
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Watts |
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Derate above 25_C |
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0.016 |
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W/_C |
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Unclamped Inductive |
E |
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32 |
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mJ |
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Load Energy (1) |
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Operating and Storage Junction |
TJ, Tstg |
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± 65 to +150 |
_C |
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Temperature Range |
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THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
Thermal Resistance, Junction to Case |
RθJC |
3.125 |
_C/W |
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 Ω..
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
NPN
TIP31A TIP31B*
TIP31C*
PNP
TIP32A TIP32B* TIP32C*
*Motorola Preferred Device
3 AMPERE
POWER TRANSISTORS COMPLEMENTARY SILICON
60 ± 80 ± 100 VOLTS
40 WATTS
CASE 221A±06
TO±220AB
Motorola, Inc. 1995
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
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Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (1) |
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VCEO(sus) |
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Vdc |
(IC = 30 mAdc, IB = 0) |
TIP31A, TIP32A |
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60 |
Ð |
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TIP31B, TIP32B |
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80 |
Ð |
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TIP31C, TIP32C |
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100 |
Ð |
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Collector Cutoff Current (VCE = 30 Vdc, IB = 0) |
TIP31A, TIP32A |
ICEO |
Ð |
0.3 |
mAdc |
Collector Cutoff Current (VCE = 60 Vdc, IB = 0) |
TIP31B, TIP31C |
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Ð |
0.3 |
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TIP32B, TIP32C |
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Ð |
0.3 |
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Collector Cutoff Current |
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ICES |
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μAdc |
(VCE = 60 Vdc, VEB = 0) |
TIP31A, TIP32A |
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Ð |
200 |
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(VCE = 80 Vdc, VEB = 0) |
TIP31B, TIP32B |
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Ð |
200 |
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(VCE = 100 Vdc, VEB = 0) |
TIP31C, TIP32C |
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Ð |
200 |
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Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) |
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IEBO |
Ð |
1.0 |
mAdc |
ON CHARACTERISTICS (1) |
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DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) |
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hFE |
25 |
Ð |
Ð |
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) |
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10 |
50 |
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Collector±Emitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc) |
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VCE(sat) |
Ð |
1.2 |
Vdc |
Base±Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) |
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VBE(on) |
Ð |
1.8 |
Vdc |
DYNAMIC CHARACTERISTICS |
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Current±Gain Ð Bandwidth Product (I C = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) |
fT |
3.0 |
Ð |
MHz |
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Small±Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
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hfe |
20 |
Ð |
Ð |
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%. |
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TC |
TA |
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40 |
4.0 |
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(WATTS) |
30 |
3.0 |
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TC |
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DISSIPATION |
20 |
2.0 |
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, POWER |
10 |
1.0 |
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TA |
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D |
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P |
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0 |
0 |
20 |
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120 |
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0 |
40 |
60 |
80 |
100 |
140 |
160 |
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T, TEMPERATURE (°C) |
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Figure 1. Power Derating
TURN±ON PULSE |
VCC |
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2.0 |
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APPROX |
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RC |
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+11 V |
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IC/IB = 10 |
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1.0 |
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TJ = 25°C |
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Vin |
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SCOPE |
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0.7 |
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Vin 0 |
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t @ V |
CC |
= 30 V |
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VEB(off) |
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RB |
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0.5 |
r |
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t1 |
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(μs) |
0.3 |
tr @ VCC = 10 V |
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Cjd << Ceb |
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APPROX |
t3 |
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TIMEt, |
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± 4.0 V |
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+11 V |
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t1 ≤ 7.0 ns |
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0.1 |
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100 < t2 < 500 μs |
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0.07 |
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td @ VEB(off) = 2.0 V |
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Vin |
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t3 < 15 ns |
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0.05 |
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t2 |
DUTY CYCLE ≈ 2.0% |
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0.03 |
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0.02 |
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TURN±OFF PULSE |
APPROX ±9.0 V |
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0.05 0.07 0.1 |
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0.5 0.7 1.0 |
3.0 |
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0.03 |
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0.3 |
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RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 2. Switching Time Equivalent Circuit |
Figure 3. Turn±On Time |
3±2 |
Motorola Bipolar Power Transistor Device Data |
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TIP31A |
TIP31B |
TIP31C |
TIP32A |
TIP32B |
TIP32C |
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(NORMALIZED) |
1.0 |
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0.7 |
D = 0.5 |
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0.5 |
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RESISTANCE |
0.3 |
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0.2 |
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0.2 |
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0.1 |
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0.1 |
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P(pk) |
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THERMAL |
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0.05 |
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ZqJC(t) = r(t) RqJC |
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0.07 |
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RqJC(t) = 3.125°C/W MAX |
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0.05 |
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0.02 |
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D CURVES APPLY FOR POWER |
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PULSE TRAIN SHOWN |
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t1 |
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TRANSIENT |
0.03 |
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0.02 |
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READ TIME AT t1 |
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t2 |
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0.01 |
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TJ(pk) ± TC = P(pk) ZqJC(t) |
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SINGLE PULSE |
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DUTY CYCLE, D = t1/t2 |
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0.01 |
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r(t), |
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1.0 |
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1.0 |
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100 |
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1.0 k |
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0.01 |
0.02 |
0.05 |
0.2 |
0.5 |
2.0 |
5.0 |
10 |
20 |
50 |
200 |
500 |
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t, TIME (ms)
Figure 4. Thermal Response
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10 |
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(AMP) |
5.0 |
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100 ms |
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5.0 ms |
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CURRENT |
2.0 |
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SECONDARY BREAKDOWN |
1.0 ms |
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1.0 |
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COLLECTOR |
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LIMITED @ TJ ≤ 150°C |
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0.5 |
THERMAL LIMIT @ TC = 25°C |
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(SINGLE PULSE) |
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BONDING WIRE LIMIT |
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, |
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TIP31A, TIP32A |
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C |
0.2 |
CURVES APPLY |
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I |
TIP31B, TIP32B |
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BELOW RATED VCEO |
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TIP31C, TIP32C |
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0.1 |
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5.0 |
10 |
20 |
50 |
100 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the limitations imposed by second breakdown.
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3.0 |
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IB1 |
= IB2 |
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300 |
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2.0 |
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TJ = + 25°C |
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ts′ |
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IC/IB = 10 |
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200 |
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1.0 |
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ts′= ts ± 1/8 tf |
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tf @ VCC = 30 V |
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0.7 |
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TJ = 25°C |
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(pF) |
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t, TIME ( μs) |
0.5 |
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CAPACITANCE |
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0.3 |
tf @ VCC = 10 V |
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100 |
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Ceb |
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0.2 |
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70 |
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0.1 |
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50 |
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0.07 |
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Ccb |
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0.05 |
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0.03 |
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30 |
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0.03 |
0.05 0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
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0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 40 |
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IC, COLLECTOR CURRENT (AMP) |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 6. Turn±Off Time |
Figure 7. Capacitance |
Motorola Bipolar Power Transistor Device Data |
3±3 |
TIP31A |
TIP31B |
TIP31C |
TIP32A |
TIP32B |
TIP32C |
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500 |
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(VOLTS) |
2.0 |
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300 |
T |
J |
= 150°C |
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V |
CE |
= 2.0 V |
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TJ = 25°C |
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VOLTAGE |
1.6 |
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CURRENT GAIN |
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100 |
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25°C |
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1.2 |
IC = 0.3 A |
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1.0 A |
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3.0 A |
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70 |
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± 55°C |
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50 |
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DC |
30 |
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COLLECTOR±EMITTER |
0.8 |
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FE |
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h |
10 |
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0.4 |
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7.0 |
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CE |
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5.0 |
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0 |
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V |
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0.03 |
0.05 |
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0.07 |
0.1 |
0.3 |
0.5 |
0.7 |
1.0 |
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3.0 |
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1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
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IC, COLLECTOR CURRENT (AMP) |
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IB, BASE CURRENT (mA) |
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Figure 8. DC Current Gain |
Figure 9. Collector Saturation Region |
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1.4 |
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TJ = 25°C |
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1.2 |
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(VOLTS) |
1.0 |
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0.8 |
VBE(sat) @ IC/IB = 10 |
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V, VOLTAGE |
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0.6 |
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VBE @ VCE = 2.0 V |
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0.4 |
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0.2 |
VCE(sat) @ IC/IB = 10 |
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0 |
0.01 |
0.02 0.03 0.05 |
0.1 |
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
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0.003 0.005 |
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IC, COLLECTOR CURRENT (AMPS) |
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Figure 10. ªOnº Voltages
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103 |
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102 |
VCE = 30 V |
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μA) |
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( |
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TJ = 150°C |
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CURRENT |
101 |
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0 |
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° |
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,COLLECTOR |
10 |
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100 C |
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10±1 |
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REVERSE |
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FORWARD |
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±2 |
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° |
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C |
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I |
10 |
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25 C |
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10±3 |
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ICES |
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± 0.3 |
± 0.2 ± 0.1 |
0 |
+ 0.1 |
+ 0.2 + 0.3 |
+ 0.4 + 0.5 |
+ 0.6 |
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± 0.4 |
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VBE, BASE±EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut±Off Region
(mV/°C) |
+ 2.5 |
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+ 2.0 |
*APPLIES FOR IC/IB ≤ hFE/2 |
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+ 1.5 |
TJ = ± 65°C TO + 150°C |
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COEFFICIENTS |
+ 1.0 |
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+ 0.5 |
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*θVC FOR VCE(sat) |
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0 |
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, TEMPERATURE |
± 0.5 |
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± 1.0 |
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± 1.5 |
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θVB FOR VBE |
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± 2.0 |
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V |
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θ |
± 2.5 |
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0.003 0.005 |
0.01 |
0.02 |
0.05 |
0.1 |
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
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IC, COLLECTOR CURRENT (AMP) |
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Figure 11. Temperature Coefficients
(OHMS) |
107 |
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RESISTANCE |
106 |
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IC = 10 x ICES |
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VCE = 30 V |
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IC ≈ ICES |
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BASE±EMITTER |
105 |
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104 |
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IC = 2 x ICES |
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,EXTERNAL |
103 |
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(TYPICAL ICES VALUES |
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OBTAINED FROM FIGURE 12) |
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102 |
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BE |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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R |
20 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 13. Effects of Base±Emitter Resistance
3±4 |
Motorola Bipolar Power Transistor Device Data |
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
PACKAGE DIMENSIONS
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±T± |
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B |
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F |
C |
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T |
S |
4 |
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Q |
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A |
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1 |
2 |
3 |
U |
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H |
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Z |
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K |
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L |
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R |
V |
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J |
G |
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D |
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N |
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SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data |
3±5 |