Материал: mmg05n60drev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMG05N60D/D
Designer's Data Sheet
Insulated Gate Bipolar Transistor
N±Channel Enhancement±Mode Silicon Gate
This IGBT contains a built±in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient operation at higher frequencies.
•Built±In Free Wheeling Diode
•Built±In Gate Protection Zener Diode
•Industry Standard Package (SOT223)
•High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms
•Robust High Voltage Termination
•Robust Turn±Off SOA
C 
G
E 
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
MMG05N60D
POWERLUX
IGBT
0.5A @ 25°C
600 V
4
1
2
3
1 = G
2 = 4 = C
3 = E
CASE 318E±04
TO±261A
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Parameters |
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Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
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VCES |
600 |
Vdc |
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Collector±Gate Voltage (RGE = 1.0 MW) |
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VCGR |
600 |
Vdc |
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Gate±Emitter Voltage Ð Continuous |
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VCGR |
± 15 |
Vdc |
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Collector Current Ð |
Continuous @ T C = 25°C |
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IC25 |
0.5 |
Adc |
Ð |
Continuous @ T C = 90°C |
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IC90 |
0.3 |
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Ð Repetitive Pulsed Current (1) |
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ICM |
2.0 |
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Total Device Dissipation @ TC = 25°C |
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PD |
1.0 |
Watt |
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Operating and Storage Junction Temperature Range |
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TJ, Tstg |
± 55 to 150 |
°C |
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Thermal Resistance |
Ð Junction to Case ± IGBT |
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RqJC |
30 |
°C/W |
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Ð Junction to Ambient |
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RqJA |
150 |
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Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds |
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TL |
260 |
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UNCLAMPED DRAIN±TO±SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) |
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Single Pulse Drain±to±Source Avalanche |
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EAS |
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mJ |
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Energy ± Starting @ TC = 25°C |
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125 |
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@ TC = 125°C |
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40 |
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VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W |
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(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer's Data for ªWorst Caseº Conditions Ð The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
Designer's is a trademark of Motorola, Inc.
Motorola,IncPower. 1997 Products Division Technical Data
MMG05N60D
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±to±Emitter Breakdown Voltage |
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BVCES |
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Vdc |
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(VGE = 0 Vdc, IC = 250 μAdc) |
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600 |
680 |
Ð |
V/°C |
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Temperature Coefficient (Positive) |
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Ð |
0.7 |
Ð |
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Zero Gate Voltage Collector Current |
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μAdc |
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(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25°C) |
ICES |
Ð |
0.1 |
5.0 |
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(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125°C) |
ICES |
Ð |
5.0 |
50 |
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Gate±Body Leakage Current (VGE = ± 15 Vdc, VCE = 0 Vdc) |
IGES |
Ð |
10 |
100 |
mAdc |
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ON CHARACTERISTICS |
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Collector±to±Emitter On±State Voltage |
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VCE(on) |
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Vdc |
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(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25°C) |
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Ð |
1.6 |
2.0 |
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(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125°C) |
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Ð |
1.5 |
Ð |
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Gate Threshold Voltage |
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VGE(th) |
3.5 |
Ð |
6.0 |
Vdc |
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(VCE = VGE, IC = 250 mAdc) |
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mV/°C |
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Threshold Temperature Coefficient (Negative) |
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Ð |
6.0 |
Ð |
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Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc) |
gfe |
0.3 |
0.42 |
Ð |
Mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VCE = 20 Vdc, VGE = 0 Vdc, |
Cies |
Ð |
75 |
100 |
pF |
Output Capacitance |
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Coes |
Ð |
11 |
20 |
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f = 1.0 MHz) |
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Transfer Capacitance |
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Cres |
Ð |
1.6 |
5.0 |
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DIODE CHARACTERISTICS |
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Diode Forward Voltage Drop |
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VFEC |
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Vdc |
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(IEC = 0.3 Adc, TC = 25°C) |
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Ð |
5.0 |
6.0 |
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(IEC = 0.3 Adc, TC = 125°C) |
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Ð |
5.2 |
Ð |
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(IEC = 0.1 Adc, TC = 25°C) |
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Ð |
2.3 |
3.0 |
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(IEC = 0.1 Adc, TC = 125°C) |
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Ð |
2.3 |
Ð |
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Reverse Recovery Time @ TC = 25°C |
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trr |
Ð |
150 |
Ð |
ns |
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IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms |
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Reverse Recovery Stored Charge |
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QRR |
Ð |
35 |
Ð |
mC |
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IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/ms |
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SWITCHING CHARACTERISTICS (1) |
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Turn±Off Delay Time |
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(VCC = 300 Vdc, IC = 0.4 Adc, |
td(off) |
Ð |
28 |
Ð |
ns |
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VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω, |
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Fall Time |
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tf |
Ð |
150 |
Ð |
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TC = 25°C, dV/dt = 1000 V/ms) |
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Turn±Off Switching Loss |
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Eoff |
Ð |
3.25 |
4.25 |
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Energy losses include ªtailº |
mJ |
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Turn±Off Delay Time |
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(VCC = 300 Vdc, IC = 0.4 Adc, |
td(off) |
Ð |
21 |
Ð |
ns |
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VGE = 15 Vdc, L = 3.0 mH, RG = 25 Ω, |
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Fall Time |
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tf |
Ð |
280 |
Ð |
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TC = 125°C, dV/dt = 1000 V/ms) |
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Turn±Off Switching Loss |
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Eoff |
Ð |
8.0 |
10 |
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Energy losses include ªtailº |
mJ |
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Gate Charge |
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(VCC = 300 Vdc, IC = 0.3 Adc, |
QT |
Ð |
6.4 |
Ð |
nC |
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VGE = 15 Vdc) |
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(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2 |
Motorola Power Products Division Technical Data |
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2.5 |
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2.5 |
(A) |
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TC = 25°C |
VGE = 15 V |
12.5 V |
10 V |
(A) |
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CURRENT |
2.0 |
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CURRENT |
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2.0 |
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, COLLECTOR±EMITTER |
1.5 |
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, COLLECTOR±EMITTER |
1.5 |
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8.0 V |
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1.0 |
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1.0 |
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0.5 |
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0.5 |
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C |
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C |
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I |
0 |
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I |
0 |
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1.0 |
2.0 |
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3.0 |
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4.0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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MMG05N60D |
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TC = 150°C |
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VGE = 15 V |
12.5 V |
10 V |
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8.0 V |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
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5.0 |
6.0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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Figure 1. Saturation Characteristics |
Figure 2. Saturation Characteristics |
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2.5 |
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12.5 V |
10 V |
(V) |
2.0 |
COLLECTOR±EMITTER CURRENT (A) |
TC = ±20°C |
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COLLECTOR±TO±EMITTER VOLTAGE |
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VGE = 15 V |
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2.0 |
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1.9 |
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1.8 |
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1.5 |
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8.0 V |
1.7 |
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1.0 |
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1.6 |
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0.5 |
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1.5 |
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, |
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, |
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C |
0 |
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CE |
1.4 |
I |
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V |
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1.0 |
2.0 |
3.0 |
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4.0 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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IC = 700 m |
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IC = 500 mA |
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IC = 300 mA |
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VG = 15 V |
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±25 |
0 |
25 |
50 |
75 |
100 |
125 |
150 |
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TC, CASE TEMPERATURE (°C) |
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Figure 3. Saturation Characteristics |
Figure 4. Collector±To±Emitter Saturation |
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Voltage versus Case Temperature |
(V) |
22 |
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TC = 150°C |
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VOLTAGE |
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±20°C |
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17 |
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, EMITTER±TO±COLLECTOR |
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25°C |
12 |
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7.0 |
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FEC |
2.0 |
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V |
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2.0 |
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0 |
0.5 |
1.0 |
1.5 |
IF, COLLECTOR CURRENT (AMPS)
Figure 5. Diode Forward Voltage
(V) |
10 |
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VOLTAGE |
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IC = 500 m |
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8.0 |
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, COLLECTOR±TO±EMITTER |
6.0 |
IC = 300 mA |
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4.0 |
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IC = 100 mA |
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2.0 |
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FEC |
0 |
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V |
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25 |
50 |
75 |
100 |
125 |
150 |
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TC, CASE TEMPERATURE (°C) |
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Figure 6. Diode Forward Voltage versus Case Temperature
Motorola Power Products Division Technical Data |
3 |
MMG05N60D |
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150 |
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TC = 25°C |
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15 |
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(V) |
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(pF) |
100 |
Cies |
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VOLTAGE |
10 |
C, CAPACITANCE |
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GATE±TO±EMITTER |
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50 |
Coes |
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5.0 |
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Cres |
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, |
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GE |
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V |
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0 |
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0 |
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0 |
5.0 |
10 |
15 |
20 |
25 |
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COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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VCE = 300 V |
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VGE = 15 V |
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IC = 0.3 A |
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TC = 25°C |
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0 |
1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
6.0 |
7.0 |
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation |
Figure 8. Gate±To±Emitter Voltage versus |
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Total Charge |
J) |
60 |
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J) |
20 |
(m |
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L = 3.0 mH |
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(m |
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LOSSES |
50 |
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LOSSES |
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VCC = 300 V |
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VGE = 15 V |
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15 |
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ENERGY |
40 |
RG = 25 W |
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ENERGY |
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dV/dt = 1.0 kV/ms |
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125°C |
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30 |
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10 |
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SWITCHING |
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SWITCHING |
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20 |
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25°C |
5.0 |
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, TOTAL |
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, TOTAL |
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10 |
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off |
0 |
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off |
0 |
E |
0.5 |
1.0 |
1.5 |
E |
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0 |
2.0 |
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IC, COLLECTOR±TO±EMITTER CURRENT (AMPS) |
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L = 3.0 mH |
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0.7 A |
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VCC = 300 V |
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VGE = 15 V |
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RG = 25 W |
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dV/dt = 1.0 kV/ms |
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0.3 A |
25 |
50 |
75 |
100 |
125 |
150 |
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TC, CASE TEMPERATURE (°C) |
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Figure 9. Total Switching Losses versus |
Figure 10. Total Switching Losses versus |
Collector±To±Emitter Current |
Case Temperature |
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2.5 |
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(A) |
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CURRENT |
2.0 |
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COLLECTOR±EMITTER |
1.5 |
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1.0 |
TC = 125°C |
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0.5 |
VGE = 15 V |
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RG = 25 W |
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, |
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L = 3.0 mH |
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CE |
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I |
0 |
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400 |
500 |
600 |
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0 |
100 |
200 |
300 |
VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 11. Minimum Turn±Off
Safe Operating Area
4 |
Motorola Power Products Division Technical Data |
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MMG05N60D |
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1.0 |
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D = 0.5 |
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r(t), TRANSIENT THERMAL |
RESISTANCE (NORMALIZED) |
0.1 |
0.2 |
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0.1 |
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0.05 |
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P(pk) |
RθJC(t) = r(t) RθJC |
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0.02 |
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° |
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RθJC = 30 C/W MAX |
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0.01 |
0.01 |
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D CURVES APPLY FOR POWER |
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t1 |
PULSE TRAIN SHOWN |
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READ TIME AT t1 |
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SINGLE PULSE |
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t2 |
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DUTY CYCLE, D = t1/t2 |
TJ(pk) ± TC = P(pk) RθJC(t) |
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0.001 |
1.0E±05 |
1.0E±04 |
1.0E±03 |
1.0E±02 |
1.0E±01 |
1.0E+00 |
1.0E+01 |
1.0E+02 |
1.0E+03 |
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t, TIME (ms)
Figure 12. Typical Thermal Response
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3.8 |
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0.15 |
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2.0 |
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0.079 |
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4.6 |
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6.2 |
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0.181 |
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0.244 |
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2.3 |
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0.091 |
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2.0 |
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0.079 |
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1.5 |
1.5 |
1.5 |
mm |
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inches |
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0.059 |
0.059 |
0.059 |
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Motorola Power Products Division Technical Data |
5 |