Материал: mrf15090rev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF15090/D
Advance Information
The RF Line
NPN Silicon
RF Power Transistor
Designed for 26 volts microwave large±signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400±1600 MHz.
•Specified 26 Volts, 1490 MHz, Class AB Characteristics Output Power Ð 90 Watts (PEP)
Gain Ð 7.5 dB Min @ 90 Watts (PEP)
Collector Efficiency Ð 30% Min @ 90 Watts (PEP) Intermodulation Distortion Ð ±28 dBc Max @ 90 Watts (PEP)
•Third Order Intercept Point Ð 56.5 dBm Typ @ 1490 MHz, V CE = 24 Vdc, IC = 5 Adc
•Characterized with Series Equivalent Large±Signal Parameters from 1400±1600 MHz
•Characterized with Small±Signal S±Parameters from 1000±2000 MHz
•Silicon Nitride Passivated
•100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
MRF15090
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 375A±01, STYLE 1
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
25 |
Vdc |
Collector±Emitter Voltage |
VCES |
60 |
Vdc |
Emitter±Base Voltage |
VEBO |
4 |
Vdc |
Collector±Current Ð Continuous @ T J(max) = 150°C |
IC |
15 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
250 |
Watts |
Derate above 25°C |
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1.43 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
0.70 |
°C/W |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector±Emitter Breakdown Voltage |
V(BR)CEO |
25 |
28 |
Ð |
Vdc |
(IC = 50 mAdc, IB = 0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CES |
60 |
65 |
Ð |
Vdc |
(IC = 50 mAdc, VBE = 0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CER |
30 |
Ð |
Ð |
Vdc |
(IC = 50 mAdc, RBE = 100 Ω) |
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(continued) |
This document contains information on a new product. Specifications and information herein are subject to change without notice. |
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Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
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Max |
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OFF CHARACTERISTICS Ð continued |
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Emitter±Base Breakdown Voltage |
V(BR)EBO |
4 |
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4.8 |
Ð |
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Vdc |
(IE = 5 mAdc, IC = 0) |
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Collector Cutoff Current |
ICES |
Ð |
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Ð |
10 |
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mAdc |
(VCE = 30 Vdc, VBE = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
20 |
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40 |
80 |
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Ð |
(ICE = 1 Adc, VCE = 5 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
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52 |
Ð |
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pF |
(VCB = 26 Vdc, IE = 0, f = 1 MHz) ± |
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For Information Only. This Part Is Collector Matched. |
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FUNCTIONAL TESTS (Figure 12) |
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Common±Emitter Amplifier Power Gain |
Gpe |
7.5 |
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8.3 |
Ð |
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dB |
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, |
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f1 = 1490 MHz, f2 = 1490.1 MHz) |
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Collector Efficiency |
η |
30 |
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36 |
Ð |
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% |
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, |
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f1 = 1490 MHz, f2 = 1490.1 MHz) |
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Intermodulation Distortion |
IMD |
Ð |
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± 32 |
± 28 |
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dBc |
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, |
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f1 = 1490 MHz, f2 = 1490.1 MHz) |
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Input Return Loss |
IRL |
12 |
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15 |
Ð |
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dB |
(VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, |
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f1 = 1490 MHz, f2 = 1490.1 MHz) |
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Load Mismatch |
ψ |
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(VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, |
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No Degradation in Output Power |
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f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase |
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Angles at Frequency of Test) |
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MRF15090 |
MOTOROLA RF DEVICE DATA |
2 |
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TYPICAL CHARACTERISTICS |
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120 |
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9.0 |
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100 |
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100 |
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Pin = 15 W |
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POWER (WATTS) |
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Gpe |
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P |
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POWER (WATTS) |
80 |
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out |
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80 |
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8.5 |
GAIN (dB) |
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10 W |
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60 |
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60 |
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OUTPUT |
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, |
OUTPUT |
40 |
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pe |
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5 W |
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40 |
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8.0 |
G |
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VCC = 26 Vdc |
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VCC = 26 Vdc |
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, |
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, |
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out |
20 |
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out 20 |
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P |
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ICQ = 250 mA |
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P |
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ICQ = 250 mA |
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f = 1490 MHz Single Tone |
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Single Tone |
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0 |
4 |
8 |
12 |
16 |
7.5 |
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0 |
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1520 |
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1560 |
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0 |
20 |
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1400 |
1420 |
1440 |
1460 |
1480 |
1500 |
1540 |
1580 |
1600 |
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Pin, INPUT POWER (WATTS) |
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f, FREQUENCY (MHz) |
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Figure 1. Output Power & Power Gain |
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Figure 2. Output Power versus Frequency |
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versus Input Power |
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COLLECTOR,η EFFICIENCY(%) |
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(dBc) |
± 20 |
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10 |
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50 |
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9 |
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Gpe |
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DISTORTION |
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3rd Order |
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(dB)GAIN |
6 |
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30 |
3.0 |
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5th |
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± 30 |
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8 |
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40 |
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7 |
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η |
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INTERMODULATION |
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VSWRINPUT |
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f1 |
= 1490 MHz |
7th |
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G |
4 |
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VSWR |
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20 |
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± 40 |
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5 |
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2.5 |
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pe |
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VCC = 26 Vdc |
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, |
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2.0 |
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± 50 |
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VCC = 26 Vdc |
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3 |
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ICQ = 250 mA |
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ICQ = 250 mA |
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2 |
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10 |
1.5 |
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IMD, |
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f2 = 1490.1 MHz |
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1 |
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± 60 |
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0 |
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0 |
1.0 |
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1420 |
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1460 |
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1500 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
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1400 |
1440 |
1480 |
1520 |
1540 |
1560 |
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Pout, OUTPUT POWER (WATTS) PEP |
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f, FREQUENCY (MHz) |
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Figure 3. Intermodulation Distortion |
Figure 4. Performance in Broadband Circuit |
versus Output Power
(dBc) |
± 20 |
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± 25 |
ICQ = 100 mA |
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DISTORTION |
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± 30 |
250 mA |
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± 35 |
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INTERMODULATION |
± 40 |
500 mA |
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± 45 |
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VCC = 26 Vdc |
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± 50 |
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f1 = 1490 MHz |
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± 55 |
750 mA |
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f2 = 1490.1 MHz |
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IMD, |
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± 60 |
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1 |
10 |
100 |
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0.1 |
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Pout, OUTPUT POWER (WATTS) PEP |
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Figure 5. Intermodulation Distortion
versus Output Power
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10 |
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9 |
ICQ = 750 mA |
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(dB) |
8 |
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500 mA |
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GAIN |
7 |
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POWER |
6 |
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5 |
250 mA |
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, |
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pe |
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VCC = 26 Vdc |
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G |
4 |
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f1 = 1490 MHz |
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3 |
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f2 = 1490.1 MHz |
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100 mA |
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2 |
1 |
10 |
100 |
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0.1 |
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA |
MRF15090 |
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3 |
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TYPICAL CHARACTERISTICS |
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60 |
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9 |
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50 |
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8.5 |
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(dBm)POWEROUTPUT, |
40 |
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VCC = 24 Vdc |
(dB)GAINPOWER, |
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7 |
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Gpe |
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30 |
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Fundamental |
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8 |
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20 |
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10 |
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3rd Order |
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7.5 |
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0 |
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IMD |
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pe |
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out±10 |
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IC = 5.0 Adc |
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ICQ = 250 mA |
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P |
± 20 |
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f1 = 1490 MHz |
G |
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± 30 |
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f2 = 1490.1 MHz |
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6.5 |
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f1 = 1490 MHz |
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f2 = 1490.1 MHz |
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± 40 |
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6 |
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10 |
15 |
20 |
25 |
30 |
35 |
40 |
45 |
50 |
18 |
20 |
24 |
26 |
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Pin, INPUT POWER (dBm) |
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VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) |
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Figure 7. Class A Third Order Intercept Point |
Figure 8. Power Gain and Intermodulation |
Distortion versus Supply Voltage
±10
±15
±20
±25
±30
±35
±40
28
IMD, INTERMODULATION DISTORTION (dBc)
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10 |
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109 |
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COLLECTOR CURRENT (Adc) |
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) |
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2 |
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8 |
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MTBF Limited |
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(HOURS x AMPS |
108 |
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Tflange = 75°C |
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6 |
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Tflange = 100°C |
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7 |
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10 |
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4 |
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, |
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BreakdownLimited |
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FACTORMTBF |
106 |
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C |
2 |
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I |
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TJ = 175°C |
|
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|
|
105 |
|
|
|
|
|
|
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|
||||
|
0 |
4 |
8 |
12 |
|
20 |
|
|
|
|
|
|
180 |
|
220 |
|
260 |
|
|
0 |
16 |
24 |
28 |
|
100 |
120 |
140 |
160 |
200 |
240 |
|||||||
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|
VCE, COLLECTOR VOLTAGE (Vdc) |
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|
TJ, JUNCTION TEMPERATURE (°C) |
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Figure 9. DC Safe Operating Area |
Figure 10. MTBF Factor versus |
Junction Temperature
The graph above displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application.
MRF15090 |
MOTOROLA RF DEVICE DATA |
4 |
|
1.45 f = 1.4 GHz 
1.5 
1.55
Zin 1.6
|
1.6 |
1.55 |
ZOL* |
1.5 |
1.45 |
f = 1.4 GHz |
|
|
f |
Zin |
ZOL* |
|
(MHz) |
(Ω) |
(Ω) |
|
|
|
|
|
1400 |
3.28 + j9.07 |
4.62 + j2.23 |
|
|
|
|
|
1450 |
3.85 |
+ j10.4 |
4.35 + j3.41 |
|
|
|
|
1500 |
4.55 |
+ j11.4 |
4.08 + j3.60 |
|
|
|
|
1550 |
5.45 |
+ j11.9 |
3.80 + j3.78 |
|
|
|
|
1600 |
6.20 |
+ j12.2 |
3.55 + j3.84 |
|
|
|
|
Zo = 10 Ω
Zin = Input impedance is a balanced base to base measurement.
ZOL* = Conjugate of optimum load impedance collector to collector into which the device operates at a given output power, bias current, voltage and frequency.
Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 90 Watts (PEP), VCC = 26 Volts, ICQ = 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz
Table 1. Common Emitter S±Parameters (for One Side of Push±Pull MRF15090) at VCE = 24 Vdc, IC = 2.5 Adc
f |
|
S11 |
|
S21 |
|
S12 |
|
S22 |
||||
MHz |
|S11| |
|
φ |
|S21| |
|
φ |
|S12| |
|
φ |
|S22| |
|
φ |
1000 |
0.999 |
|
172 |
0.164 |
|
108 |
0.006 |
|
72 |
0.957 |
|
173 |
1050 |
0.999 |
|
171 |
0.179 |
|
103 |
0.007 |
|
69 |
0.956 |
|
172 |
1100 |
0.994 |
|
170 |
0.196 |
|
97 |
0.007 |
|
66 |
0.948 |
|
172 |
1150 |
0.992 |
|
170 |
0.216 |
|
92 |
0.008 |
|
63 |
0.940 |
|
171 |
1200 |
0.994 |
|
169 |
0.241 |
|
86 |
0.008 |
|
62 |
0.935 |
|
171 |
1250 |
0.986 |
|
168 |
0.269 |
|
80 |
0.009 |
|
57 |
0.924 |
|
170 |
1300 |
0.982 |
|
167 |
0.306 |
|
73 |
0.010 |
|
51 |
0.915 |
|
170 |
1350 |
0.973 |
|
166 |
0.351 |
|
66 |
0.011 |
|
45 |
0.905 |
|
170 |
1400 |
0.957 |
|
164 |
0.408 |
|
56 |
0.012 |
|
33 |
0.888 |
|
170 |
1450 |
0.938 |
|
163 |
0.483 |
|
44 |
0.013 |
|
22 |
0.876 |
|
170 |
1500 |
0.903 |
|
162 |
0.571 |
|
29 |
0.014 |
|
7 |
0.859 |
|
171 |
1550 |
0.857 |
|
163 |
0.651 |
|
10 |
0.014 |
|
±13 |
0.855 |
|
173 |
1600 |
0.821 |
|
165 |
0.673 |
|
±14 |
0.013 |
|
± 40 |
0.877 |
|
174 |
1650 |
0.837 |
|
169 |
0.623 |
|
± 37 |
0.011 |
|
± 67 |
0.902 |
|
174 |
1700 |
0.872 |
|
170 |
0.529 |
|
± 56 |
0.009 |
|
±104 |
0.922 |
|
173 |
1750 |
0.901 |
|
170 |
0.437 |
|
±70 |
0.008 |
|
±138 |
0.931 |
|
172 |
1800 |
0.920 |
|
170 |
0.363 |
|
± 81 |
0.007 |
|
±165 |
0.932 |
|
171 |
1850 |
0.940 |
|
169 |
0.309 |
|
± 90 |
0.008 |
|
173 |
0.930 |
|
170 |
1900 |
0.954 |
|
169 |
0.265 |
|
± 98 |
0.008 |
|
150 |
0.932 |
|
169 |
1950 |
0.965 |
|
168 |
0.232 |
|
±104 |
0.009 |
|
139 |
0.930 |
|
169 |
2000 |
0.971 |
|
167 |
0.205 |
|
±110 |
0.010 |
|
132 |
0.929 |
|
168 |
|
|
|
|
|
|
|
|
|
|
|
|
|
MOTOROLA RF DEVICE DATA |
MRF15090 |
|
5 |