Материал: mrf338rev2
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF338/D
The RF Line |
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NPN Silicon RF Power Transistor |
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Designed primarily for wideband large±signal output and driver amplifier |
MRF338 |
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stages in the 400 to 512 MHz frequency range. |
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• Specified 28 Volt, 470 MHz Characteristics |
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Output Power = 80 Watts |
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Minimum Gain = 7.3 dB |
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Efficiency = 50% (Min) |
80 W, 400 to 512 MHz |
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• Built±In Matching Network for Broadband Operation |
CONTROLLED ªQº |
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BROADBAND RF POWER |
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• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR |
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TRANSISTOR |
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• Gold Metallization System for High Reliability Applications |
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NPN SILICON |
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CASE 333±04, STYLE 1
MAXIMUM RATINGS
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
30 |
Vdc |
Collector±Base Voltage |
VCBO |
60 |
Vdc |
Emitter±Base Voltage |
VEBO |
4 |
Vdc |
Collector Current Ð Continuous |
IC |
9 |
Adc |
Ð Peak |
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12 |
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Total Device Dissipation @ TC = 25°C (1) |
PD |
250 |
Watts |
Derate above 25°C |
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1.43 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Case (2) |
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RθJC |
0.7 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage |
V(BR)CEO |
30 |
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Vdc |
(IC = 80 mAdc, IB = 0) |
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Collector±Emitter Breakdown Voltage |
V(BR)CES |
60 |
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Ð |
Vdc |
(IC = 80 mAdc, VBE = 0) |
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Emitter±Base Breakdown Voltage |
V(BR)EBO |
4 |
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Ð |
Vdc |
(IE = 8 mAdc, IC = 0) |
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(1)This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2)Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 2
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
MRF338 |
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1 |
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
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Typ |
Max |
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Unit |
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OFF CHARACTERISTICS |
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Collector±Base Breakdown Voltage |
V(BR)CBO |
60 |
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Ð |
Ð |
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Vdc |
(IC = 80 mAdc, IE = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
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Ð |
5 |
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mAdc |
(VCB = 30 Vdc, IE = 0) |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
20 |
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80 |
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Ð |
(IC = 4 Adc, VCE = 5 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
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95 |
125 |
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pF |
(VCB = 28 Vdc, IE = 0, f = 1 MHz) |
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FUNCTIONAL TESTS (Figure 1) |
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Common±Emitter Amplifier Power Gain |
GPE |
7.3 |
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8.8 |
Ð |
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dB |
(VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) |
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Collector Efficiency |
h |
50 |
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60 |
Ð |
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% |
(VCC = 28 Vdc, Pout = 80 W, f = 470 MHz) |
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Load Mismatch |
y |
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(VCC = 28 Vdc, Pout = 80 W, f = 470 MHz, |
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No Degradation in Output Power |
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VSWR = 30:1, All Phase Angles at Frequency of Test) |
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RFC1 |
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L4 |
VCC |
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+ |
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C12 |
C14 |
+ |
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C15 |
28 V |
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C13 |
± |
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R2 |
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L3 |
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C11 |
L2 |
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R1 |
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C10 |
RF |
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Z2 |
Z3 |
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Z4 |
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OUTPUT |
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DUT |
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RF
Z1
INPUT
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L1 |
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C6 |
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C7 |
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C8 |
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C9 |
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C1 |
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C2 |
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C3 |
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C4 |
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BEAD |
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C5 |
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Bead |
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Ferroxcube #56±590±65/3B |
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L3 |
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3 Turns #18 AWG, 0.185″ |
ID, Close Wound |
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C1, C2, C8, C9 |
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0.8± 20 pF, Johanson (JMC 5501) |
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L4 |
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4 Turns #18 AWG, 0.185″ |
ID, Close Wound |
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C3, C4, C6, C7 |
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25 pF, 100 V, Underwood |
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RFC1 |
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Ferroxcube VK200 19/4B |
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C5, C10 |
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100 pF, 100 V, Underwood |
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R1, R2 |
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10 W, 2.0 Watt Carbon |
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C11, C13 |
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0.1 mF, Erie Redcap |
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Z1 |
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0.190″ W x 2.5″ L, Microstrip Lin |
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C12, C14 |
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680 pF, Feedthru |
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Z2 |
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0.190″ W x 0.289″ L, Microstrip Line |
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C15 |
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1.0 mF, Tantalum |
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Z3 |
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0.190″ W x 0.55″ L, Microstrip Line |
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L1 |
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0.15 mH, Molded Choke |
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Z4 |
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0.190″ W x 0.325″ L, Microstrip Line |
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L2 |
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5 Turns #20 AWG, 0.185″ ID, Close Wound |
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Board |
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Glass Teflon, t = 0.062″ , er = 2.56 |
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Figure 1. 470 MHz Test Circuit
MRF338 |
MOTOROLA RF DEVICE DATA |
2 |
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TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS)
100
80
60
40
20
0
0
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f = 470 MHz |
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(WATTS) |
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512 MHz |
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POWEROUTPUT, |
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400 MHz |
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out |
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VCC = 28 |
Vdc |
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P |
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16 |
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4 |
8 |
12 |
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20 |
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Pin, INPUT POWER (WATTS) |
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100 |
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Pin = 14 W |
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80 |
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12 W |
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60 |
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10 W |
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40 |
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20 |
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f |
= 470 MHz |
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0 |
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12 |
14 |
16 |
18 |
20 |
22 |
24 |
26 |
28 |
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VCC, SUPPLY VOLTAGE (V)
Figure 2. Output Power versus Input Power |
Figure 3. Output Power versus Supply Voltage |
GPE, POWER GAIN (dB)
10 |
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9 |
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8 |
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7 |
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6 |
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VCC = 28 |
Vdc |
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5 |
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Pout = 80 |
W |
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400 |
425 |
450 |
475 |
500 |
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525 |
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f, FREQUENCY (MHz)
Pout, OUTPUT POWER (WATTS)
100 |
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Pin = |
16 W |
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80 |
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12 |
W |
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60 |
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8.0 |
W |
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40 |
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20 |
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VCC = 28 |
Vdc |
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0 |
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400 |
425 |
450 |
475 |
500 |
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525 |
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f, FREQUENCY (MHz)
Figure 4. Power Gain versus Frequency |
Figure 5. Output Power versus Frequency |
MOTOROLA RF DEVICE DATA |
MRF338 |
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3 |
470 |
512 |
512 |
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500 |
f = 400 MHz |
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Zin |
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450 |
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500 |
450 |
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ZOL* |
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470 |
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f = 400 MHz
VCC = 28 V, Pout = 80 W
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f |
Zin |
ZOL* |
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MHz |
Ohms |
Ohms |
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512 |
0.91 + j2.61 |
1.19 + j1.34 |
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500 |
1.47 + j2.71 |
1.33 + j0.96 |
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470 |
1.53 + j2.98 |
1.60 + j0.45 |
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450 |
1.27 + j3.09 |
1.70 + j0.25 |
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400 |
0.86 + j3.01 |
2.58 ± j0.79 |
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Zo = ?? Ω
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
Figure 6. Series Equivalent Input/Output Impedance
MRF338 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
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±A± |
Q 2 PL |
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N |
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0.13 (0.005) M |
T |
A |
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B |
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D |
M |
M |
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2 |
K |
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1 |
3 |
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P |
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±B± |
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4 |
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K |
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F
G
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.965 |
0.985 |
24.51 |
25.02 |
B |
0.390 |
0.410 |
9.91 |
10.41 |
C |
0.250 |
0.290 |
6.73 |
7.36 |
D |
0.190 |
0.210 |
4.83 |
5.33 |
E |
0.095 |
0.115 |
2.42 |
2.92 |
F |
0.215 |
0.235 |
5.47 |
5.96 |
G |
0.725 BSC |
18.42 BSC |
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H |
0.155 |
0.175 |
3.94 |
4.44 |
J |
0.004 |
0.006 |
0.10 |
0.15 |
K |
0.195 |
0.205 |
4.95 |
5.21 |
L |
0.740 |
0.770 |
18.80 |
19.55 |
N |
0.415 |
0.425 |
10.54 |
10.80 |
P |
0.390 |
0.400 |
9.91 |
10.16 |
Q |
0.120 |
0.135 |
3.05 |
3.42 |
J |
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STYLE 1: |
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N |
N |
PIN 1. |
EMITTER |
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2. |
COLLECTOR |
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3. |
EMITTER |
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C |
4. |
BASE |
H |
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±T± |
SEATING |
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PLANE |
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CASE 333±04
ISSUE E
MOTOROLA RF DEVICE DATA |
MRF338 |
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5 |