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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF650/D

The RF Line

NPN Silicon

RF Power Transistor

Designed for 12.5 Volt UHF large±signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz.

•Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts

Minimum Gain = 5.2 dB @ 440, 470 MHz Efficiency = 55% @ 440, 470 MHz

IRL = 10 dB

•Characterized with Series Equivalent Large±Signal Impedance Parameters from 400 to 520 MHz

•Built±In Matching Network for Broadband Operation

•Triple Ion Implanted for More Consistent Characteristics

•Implanted Emitter Ballast Resistors

•Silicon Nitride Passivated

•100% Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc, 2.0 dB Overdrive

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

MRF650

50 W, 512 MHz RF POWER TRANSISTOR NPN SILICON

CASE 316±01, STYLE 1

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	16.5	Vdc
Collector±Emitter Voltage	VCES	38	Vdc
Emitter±Base Voltage	VEBO	4.0	Vdc
Collector Current Ð Continuous	IC	12	Adc
Total Device Dissipation @ TC = 25°C	PD	135	Watts
Derate above 25°C		0.77	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Junction Temperature	TJ	200	°C
THERMAL CHARACTERISTICS

Characteristic		Symbol		Max		Unit

Thermal Resistance, Junction to Case		RθJC		1.3		°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ		Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)	V(BR)CEO	16.5	Ð		Ð	Vdc
Collector±Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)	V(BR)CES	38	Ð		Ð	Vdc
Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0)	V(BR)EBO	4.0	Ð		Ð	Vdc
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C)	ICES	Ð	Ð		5.0	mAdc
ON CHARACTERISTICS

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)	hFE	20	70		120	Ð
DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)	Cob	Ð	135		170	pF
						(continued)
REV 8

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA						MRF650
						1

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min		Typ	Max	Unit

FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.)

Common±Emitter Amplifier Power Gain	Gpe	5.2		6.1	Ð	dB
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz)
Common±Emitter Amplifier Power Gain	Gpe	5.0		5.9	Ð	dB
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz)
Input Return Loss	IRL	10		15	Ð	dB
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470, 512 MHz)
Collector Efficiency	h	55		65	Ð	%
(VCC = 12.5 Vdc, Pout = 50 W, f = 440, 470 MHz)
Collector Efficiency	Ð	50		60	Ð	%
(VCC = 12.5 Vdc, Pout = 50 W, f = 512 MHz)
Output Mismatch Stress	y (2)
(VCC = 15.5 V, 2.0 dB Overdrive, f = 470 MHz,			No Degradation in Output Power
VSWR = 20:1, All Phase Angles) (1)

NOTES:

1.Pin = 2.0 dB above drive requirement for 50 W output at 12.5 Vdc.

2.y = Mismatch stress factor Ð the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.

D VRE

PORT

+12.5 Vdc

SOCKET

D.U.T.

OUTPUT

RF INPUT

TL7

TL8

TL9

TL10

C16

TL12

50 W

TL1

TL3

TL4

TL5

TL6

C12

C13

TL2

C10

C11

C14

C15

TL11

B1, B8 Ð Ferrite Bead Ferroxcube VK200 20±4B

B2, B3, B4, B5, B6, B7 Ð Ferrite Bead Ferroxcube #56±590±3B

C1, C8 Ð 10 mF, 25 V, 25%, Electrolytic, ECS TE±1204 C2, C7 Ð 1000 pF, Chip Cap, 5%, ATC 100B102JC50

C3, C6 Ð 91 pF, 5%, Mica, SAHA 3HS0006±91

C4, C5, C12, C13 Ð 36 pF, 5%, SAHA 3HS0006±36 C9, C16 Ð 220 pF, Chip Cap, 5%, ATC 100B221JC200

C10, C11, C15 Ð 0.8 ± 10 pF, Variable, Johanson JMC501 PG26J200 C14 Ð 1.0 ± 20 pF, Variable, Johanson JMC5501 PG26J200

L1, L2 Ð 3 Turns, 18 AWG, 0.19 ″ ID Ð Total Length 3.5 ″

N1, N2 Ð N Coaxial Conn., Omni±Spectra 3052±1648±10

R1, R2 Ð 10 Ohm, 10%, 1.0 W, Carbon, RCA 831010

TL1, TL12 Ð Z o = 50 Ohm

TL2 Ð See Photomaster

TL3 Ð See Photomaster

TL4 Ð See Photomaster

TL5 Ð See Photomaster

TL6 Ð See Photomaster

TL7 Ð See Photomaster

TL8 Ð See Photomaster

TL9 Ð See Photomaster

TL10 Ð See Photomaster

TL11 Ð See Photomaster

Transmission Line Boards: 1/16″ Glass±Teflon

Keene GX±0600±55±22

2 oz. Cu Clad Both Sides er = 2.55

Bias Boards: 1/16″ G10 or Equivalent

2 oz. Cu Clad Double Sided

	Figure 1. 440 to 512 MHz Broadband Test Circuit Schematic

MRF650	MOTOROLA RF DEVICE DATA
2

Po, OUTPUT POWER (WATTS)

90									80
80						f = 400			70
80						MHz			70						Pin = 17 W
70						470 MHz		(WATTS)							Pin = 17 W
70						512 MHz		(WATTS)	60						15 W
60						520 MHz									15 W
60								POWER	40						13 W
50									50						11 W
															11 W

40								OUTPUT,
30								OUTPUT,	30
									30

20								o	20
20						VCC = 12.5 Vdc		P						VCC = 12.5 Vdc
10						VCC = 12.5 Vdc			10					VCC = 12.5 Vdc
10									10
0	4	8	12	16	20	24	28	32	0	420	440	460	480	500	520
0	4	8	12	16	20	24	28	32	400	420	440	460	480	500	520

Pin, INPUT POWER (WATTS)	f, FREQUENCY (MHz)
Figure 2. Output Power versus Input Power	Figure 3. Output Power versus Frequency

	90												16
	80								Pin = 17 W				14				P	o	= 50 W
	80									15 W			14				VCC = 12.5 Vdc
(WATTS)POWEROUTPUT,												(WATTS)POWERINPUT,					VCC = 12.5 Vdc
	30												4
	30												4			Pin
	70									13 W			12			Pin
	60									11 W			10
	60												10
	50												8			ηc
	40												6
o												in
P	20								f = 512 MHz			P	2			VSWR
									f = 512 MHz

	10 7	8	9	10	11	12	13	14	15	16	17		0	440	460	480	500		520
				VCC, SUPPLY VOLTAGE (VOLTS)												f, FREQUENCY (MHz)

		(%)
	90	EFFICIENCY
	90
	80	COLLECTOR
	60	COLLECTOR
	70
		,
		c
	η
	2.0:1
	1.5:1	VSWR
	1.0:1	VSWR
	1.0:1

Figure 4. Output Power versus Supply Voltage

Figure 5. Broadband Performance for Po = 50 W

		Pout = 50 W, VCC = 12.5 Vdc
			TUNED FOR MAXIMUM
			GAIN AT Po = 50 W
	Zin	f	Zin	ZOL*		ZOL*
470		f	Zin	ZOL*		ZOL*
470	512	(MHz)	Ω	Ω	520
440		(MHz)	Ω	Ω		512

	520	400	0.7 + j2.8	1.4 + j2.3
f = 400 MHz	520	400	0.7 + j2.8	1.4 + j2.3	470	440
f = 400 MHz		440	0.7 + j3.2	1.1 + j2.6	470	440
		440	0.7 + j3.2	1.1 + j2.6
		470	0.8 + j3.3	0.8 + j2.7		f = 400 MHz
		512	0.8 + j3.2	0.7 + j2.9
		520	0.7 + j3.0	0.6 + j3.0

NOTE: Zin & ZOL* are given from base±to±base and collector±to±collector respectively.

ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given

ZOL* = output power, voltage and frequency.

Figure 6. Input and Output Impedance Normalized to 10 Ohms

Circuit Tuned for Maximum Gain @ Po = 50 W

MOTOROLA RF DEVICE DATA	MRF650
	3

				R1, R2, R3, R4
B1	L1	(440± 512 MHz)	L2	B3
B1				B3

+12.5 Vdc

TL4

TL11

C10

C11

C13

D.U.T.

TL8

TL9 TL10

TL12

TL13 C12

TL14

TL1 C1

TL2

TL3

TL5

TL6 TL7

B1, B2 Ð Ferrite Bead Fair Rite Products Corp.

R1, R2, R3, R4 Ð 39 Ohm 1/8 W 5% Rohm

B3 Ð Ferrite Bead Fair Rite Products Corp.

TL1 Ð Z o = 50 Ohm

C2, C11 Ð 820 pF, 5%

TL2 Ð Z o = 50 Ohm

C3, C10 Ð 91 pF, 5%, Mica, SAHA 3HS0006±91

TL3 Ð Z o = 50 Ohm

C1, C12 Ð 220 pF, 5%, Murata Erie

TL4 Ð See Photomaster

C4 Ð 9.1 pF, 5%, Murata Erie

TL5 Ð Z o = 50 Ohm

C5, C6, C7, C8 Ð 43 pF, 5%, Mica SAHA 3HS0006±43

TL6 Ð See Photomaster

C9 Ð 10 pF, 5%, Murata Erie

TL7 Ð See Photomaster

C13 Ð 10 mF, Electrolytic, 50 V, Panasonic

TL8 Ð See Photomaster

L1 Ð 7 Turns, 24 AWG, ID Dia. 0.116 ″

TL9 Ð See Photomaster

TL10 Ð Z o = 50 Ohm

L2 Ð 5 Turns, 18 AWG, ID Dia. 0.165 ″

TL11 Ð See Photomaster

	N1, N2 Ð SMA Flange Mount, Omni±Spectra	TL12 Ð Z o = 50 Ohm
	2052±1618±02	TL12 Ð Z o = 50 Ohm
	2052±1618±02	TL13 Ð Z o = 50 Ohm
		TL13 Ð Z o = 50 Ohm
		TL14 Ð Z o = 50 Ohm
		Board Material: 1/16″ G10, er = 4.5
		2 oz. Cu Clad Both Sides

Figure 7. Schematic of Broadband Demonstration Amplifier (3)

PERFORMANCE CHARACTERISTICS OF

BROADBAND DEMONSTRATION AMPLIFIER

Pout, OUTPUT POWER (WATTS)

100
90						f = 400
80						470MHzMHz
70						512 MHz
60
50
40
30
20
10						VCC = 12.5 Vdc
0	5	10	15	20	25	30	35	40
0	5	10	15	20	25	30	35	40

	80								Pin = 15 W			(%)
	70								Pin = 15 W			(%)
OUTPUT POWER (WATTS)	70						Po		VCC = 12.5 V			, COLLECTOR EFFICIENCY
							Po		VCC = 12.5 V
	60
	50						hc				80
	40										70
	30										60

,												c
out	20										η
out	20										2.0:1
P
	10						VSWR				1.5:1	VSWR
	0										1.0:1	VSWR
	0	440	450	460	470	480	490	500	510	520	1.0:1
	430	440	450	460	470	480	490	500	510	520	530

Pin, INPUT POWER (WATTS)	f, FREQUENCY (MHz)
Figure 8. Output Power versus Input Power	Figure 9. Po, ηc and VSWR versus Frequency

(3) Detailed design and performance information available from Motorola upon request.

MRF650	MOTOROLA RF DEVICE DATA
4

PACKAGE DIMENSIONS

D	F
D
	4
R	K
3	K
	1
Q	2
	2
	L

	B	C
	J	C
	J
	E
		N
	H
	A	U

CASE 316±01

ISSUE D

NOTES:

1. FLANGE IS ISOLATED IN ALL STYLES.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	24.38	25.14	0.960	0.990
B	12.45	12.95	0.490	0.510
C	5.97	7.62	0.235	0.300
D	5.33	5.58	0.210	0.220
E	2.16	3.04	0.085	0.120
F	5.08	5.33	0.200	0.210
H	18.29	18.54	0.720	0.730
J	0.10	0.15	0.004	0.006
K	10.29	11.17	0.405	0.440
L	3.81	4.06	0.150	0.160
N	3.81	4.31	0.150	0.170
Q	2.92	3.30	0.115	0.130
R	3.05	3.30	0.120	0.130
U	11.94	12.57	0.470	0.495

STYLE 1:

PIN 1. EMITTER

2.COLLECTOR

3.EMITTER

4.BASE

MOTOROLA RF DEVICE DATA	MRF650
	5

Источник: https://studfile.net/preview/16503569/

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