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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF8372/D

The RF Line

NPN Silicon

RF Low Power Transistor

Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.

•Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW

Minimum Gain = 8.0 dB Efficiency 60% (Typ)

•State±of±the±Art Technology

Fine Line Geometry

Gold Top Metal and Wires

Silicon Nitride Passivated

Ion Implanted Arsenic Emitters

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

•Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix = 500 units per reel

R2 suffix = 2,500 units per reel

MAXIMUM RATINGS

MRF8372R1, R2

750 mW, 870 MHz RF LOW POWER TRANSISTOR NPN SILICON

CASE 751±05, STYLE 1

SORF (SO±8)

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	16	Vdc
Collector±Base Voltage	VCBO	36	Vdc
Emitter±Base Voltage	VEBO	4.0	Vdc
Collector Current Ð Continuous	IC	200	mAdc
Total Device Dissipation @ TC = 75°C (1)	PD	1.67	Watts
Derate above 75°C		22.2	mW/°C

Storage Temperature Range	TJ, Tstg	± 55 to +150	°C
Maximum Junction Temperature	TJmax	150	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	45	°C/W

DEVICE MARKING

MRF8372 = 8372

NOTE:

1. Case temperature measured on collector lead immediately adjacent to body of package.

	(Replaces MRF837/D)
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF8372R1, R2
	1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	16	Ð	Ð	Vdc
(IC = 5.0 mAdc, IB = 0)
Collector±Emitter Breakdown Voltage	V(BR)CES	36	Ð	Ð	Vdc
(IC = 5.0 mAdc, VBE = 0)
Emitter±Base Breakdown Voltage	V(BR)EBO	4.0	Ð	Ð	Vdc
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current	ICES	Ð	Ð	0.1	mAdc
(VCE = 15 Vdc, VBE = 0, TC = 25°C)
ON CHARACTERISTICS

DC Current Gain	hFE	30	90	200	Ð
(IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS

Output Capacitance	Cob	Ð	1.8	2.5	pF
(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS

Common±Emitter Amplifier Power Gain	Gpe	8.0	10	Ð	dB
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)
Collector Efficiency	η	55	60	Ð	%
(VCC = 12.5 Vdc, Pout = 0.75 W, f = 870 MHz)

MRF8372R1, R2	MOTOROLA RF DEVICE DATA
2

				C6	L3		+
			B		B		+
							+
					C7	C8	VCC
		L1			L2		±
							±
					C4
				Z5	Z6
Z1	Z2	Z3	Z4	DUT
					C5
C1	C2		C3


C1, C5 Ð 0.8 ± 8.0 pF Johanson Gigatrim		L1, L2	Ð 4 Turns, #21 AWG, 5/32 ″ ID
C2, C3 Ð 10 pF Ceramic Chip Capacitor		L3 Ð 7	Turns, #21 AWG, 5/32 ″ ID
C6	Ð 91 pF Clamped Mica, Mini±Underwood	Z1, Z2 Ð 1 ″ x 0.078″ Microstrip, Zo = 50 Ohms
C4	Ð 47 pF Ceramic Chip Capacitor	Z3 Ð 0.25		″	x 0.078″	Microstrip, Zo = 50 Ohms
C7	Ð 91 pF Clamped Mica, Mini±Underwood	Z4 Ð 0.15		″	x 0.078″	Microstrip, Zo = 50 Ohms
C8	Ð 1.0 mF 25 V Tantalum	Z5 Ð 0.30		″	x 0.078″	Microstrip, Zo = 50 Ohms
B Ð Bead, Ferroxcube 56±590±65/3B		Z6 Ð 1.63		″	x 0.078″	Microstrip, Zo = 50 Ohms
		PCB Ð 1/32 ″ Glass Teflon, er = 2.56

Figure 1. 800 ± 900 MHz Broadband Circuit

800/900 MHz BAND DATA

					Pout = 750 mW
	12				VCC = 12.5 Vdc
	10		GPE
, GAIN (dB)	10					70	,COLLECTOR	(%)
						70
	8		hc
			hc			60
	6
PE						50	c
G						50	η EFFICIENCY
	4							(dB)
						10	IRL, INPUT	(dB)
						10		RETURN LOSS
	2		IRL			15
			IRL			20
						20
	800	820	840	860	880	25
	800	820	840	860	880	900
			f, FREQUENCY (MHz)
			f, FREQUENCY (MHz)

Figure 2. Typical Broadband Performance

MOTOROLA RF DEVICE DATA	MRF8372R1, R2
	3

	Zin		ZOL*
	Ohms		Ohms

	VCC = 7.5 V	VCC = 12.5 V	VCC = 7.5 V	VCC = 12.5 V
f			Pout = 806 MHz = 820 mW	Pout = 806 MHz = 1.05 mW
Frequency			Pout = 870 MHz = 635 mW	Pout = 870 MHz = 855 mW
MHz	Pin = 150 mW	Pin = 100 mW	Pout = 960 MHz = 530 mW	Pout = 960 MHz = 580 mW
806	8.0 + j1.9	4.0 + j1.2	24.7 ± j19.2	20.9 ± j31.0
870	5.2 + j3.5	6.0 + j1.9	36.9 ± j20.5	32.1 ± j26.6
960	6.8 + j4.0	6.1 + j2.5	39.3 ± j18.5	36.3 ± j25.7

ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency.

Table 1. Series Equivalent Input/Output Impedance

TYPICAL CHARACTERISTICS

800/900 MHz BAND DATA (continued)

	1200
(mW)									VCC = 12.5 Vdc
(mW)	900
POWER	600								7.5 Vdc
, OUTPUT	600								7.5 Vdc
, OUTPUT
out	300
P	300
	0	0	15	30	45	60	75	90	105	120	135	150
						Pin, INPUT POWER (mW)

Figure 3. Output Power versus Input Power f = 870 MHz

	1200
(mW)	1200				Pin	= 150	mW
	900				Pin	= 150	mW

						100	mW
POWER						100	mW
	600

OUTPUT,
						50	mW

out	300
out
P

									f =	870 MHz
	0
	0	6	8	10				12	14		16
				VCC, COLLECTOR VOLTAGE (Vdc)

Figure 5. Output Power versus Collector Voltage

	1000
(mW)
POWER								Pin = 150 mW
POWER	500
, OUTPUT	500							100 mW
								100 mW

out								50 mW
P								50 mW
	0	820	840	860	880	900	920	940	960
	800	820	840	860	880	900	920	940	960
				f, FREQUENCY (MHz)

Figure 4. Output Power versus Frequency

				VCC = 7.5 Vdc
	1600
(mW)	1200
POWER								Pin = 150 mW
POWER	800
, OUTPUT	800							100 mW
								100 mW

out	400
P	400							50 mW
								50 mW
	0						VCC = 12.5 Vdc
	0	820	840	860	880	900	920	940	960
	800	820	840	860	880	900	920	940	960

f, FREQUENCY (MHz)

Figure 6. Output Power versus Frequency

MRF8372R1, R2	MOTOROLA RF DEVICE DATA
4

TYPICAL CHARACTERISTICS

800/900 MHz BAND DATA (continued)

	1600										1200
	1400										1000
(mW)										(mW)	1000
	1200
							VCC = 12.5 Vdc
POWER	1000						VCC = 12.5 Vdc			POWER	800					Pin = 75 mW
	1000															Pin = 75 mW
	800										600
,OUTPUT	800									,OUTPUT	600					50 mW
							7.5 Vdc									50 mW
	600						7.5 Vdc
	600										400
											400					25 mW
out	400									out						25 mW
out	400									out
P										P	200
	200										200
	200															VCC = 7.5 Vdc
	0							f = 512 MHz			0					VCC = 7.5 Vdc
	0	10	20	30	40	50	60	70	80		0	420	440	460	480	500	520
	0	10	20	30	40	50	60	70	80		400	420	440	460	480	500	520

Pin, INPUT POWER (mW)	f, FREQUENCY (MHz)
Figure 7. Output Power versus Input Power	Figure 8. Output Power versus Frequency

1400

1200

	(mW)	1000
	POWER	1000
	POWER	800
	OUTPUT,	800
	OUTPUT,	600
		600
	out	400
	out
	P
		200
		0

					1500
				(mW)	1300					Pin = 75 mW
	Pin = 75 mW			(mW)
	Pin = 75 mW			POWER	1100					50 mW
				POWER						50 mW

	50 mW			, OUTPUT	900
					900
	25 mW				700
	25 mW			out
				out
				P						25 mW
					600					25 mW
					600
			f = 512 MHz		300	VCC = 12.5 Vdc
					300
8	10	12	14	16	400	420	440	460	480	500	520
	VCC, COLLECTOR VOLTAGE (Vdc)						f, FREQUENCY (MHz)

Figure 9. Output Power versus Collector Voltage

Figure 10. Output Power versus Frequency

MOTOROLA RF DEVICE DATA	MRF8372R1, R2
	5

Источник: https://studfile.net/preview/16503553/

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