Материал: mrf897rev6
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF897/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large±signal, common emitter, class±AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800±970 MHz.
•Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts
Minimum Gain = 10 dB @ 900 MHz, class±AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion ±30 dBc @ 30 Watts (PEP)
•Characterized with Series Equivalent Large±Signal Parameters from 800 to 960 MHz
•Silicon Nitride Passivated
•100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power
•Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal± Migration
•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
MRF897
30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON
CASE 395B±01, STYLE 1
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
30 |
Vdc |
Collector±Emitter Voltage |
VCES |
60 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector±Current Ð Continuous |
IC |
4.0 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
105 |
Watts |
Derate above 25°C |
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0.60 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.67 |
°C/W |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) |
V(BR)CEO |
30 |
33 |
Ð |
Vdc |
Collector±Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) |
V(BR)CES |
60 |
80 |
Ð |
Vdc |
Emitter±Base Breakdown Voltage (IE = 5 mAdc, IC = 0) |
V(BR)EBO |
4.0 |
4.7 |
Ð |
Vdc |
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) |
ICES |
Ð |
Ð |
10.0 |
mAdc |
ON CHARACTERISTICS |
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DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) |
hFE |
30 |
80 |
120 |
Ð |
DYNAMIC CHARACTERISTICS |
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Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) |
Cob |
14 |
21 |
28 |
pF |
(continued)
REV 6
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
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Max |
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FUNCTIONAL CHARACTERISTICS |
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Common±Emitter Amplifier Power Gain |
Gpe |
10.0 |
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12.0 |
Ð |
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dB |
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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f2 = 900.1 MHz) |
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Collector Efficiency |
h |
35 |
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38 |
Ð |
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% |
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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f2 = 900.1 MHz) |
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Intermodulation Distortion |
IMD |
Ð |
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±37 |
±30 |
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dBc |
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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f2 = 900.1 MHz) |
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Output Mismatch Stress |
y |
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No Degradation in Output Power |
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(VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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Before and After Test |
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f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles)) |
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Q1 |
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C11 |
C13 |
C18 |
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VCC |
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R1 |
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+ |
+ |
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VBB |
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+ |
L5 |
R5 |
C21 |
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COAX 1 |
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R3 |
L3 |
C6 |
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C4 |
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B3 |
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BALUN 2 |
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B1 |
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C16 |
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TL9 |
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TL3 |
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C8 |
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L7 |
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L1 |
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TL2 |
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TL7 |
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OUTPUT |
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INPUT |
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TL5 |
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C23 |
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TL11 |
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C2 |
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TL1 |
C10 |
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C15 |
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C20 |
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C1 |
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TL6 |
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TL8 |
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C24 |
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C3 |
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D.U.T. |
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L2 |
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L8 |
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TL4 |
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BALUN 1 |
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B2 |
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TL10 |
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C9 |
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B4 |
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C17 |
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C5 |
R4 |
L4 |
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COAX 2 |
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R2 |
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L6 |
R6 |
C22 |
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VBB |
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+ |
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C7 |
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VCC |
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Q2 |
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+ |
+ |
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C12 |
C14 |
C19 |
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B1, B2, B3, B4 Ð Ferrite Bead, Fair Rite #2743019447 |
N1, N2 Ð T ype N Flange Mount, Omni Spectra 3052±1648±10 |
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C1 Ð 0.8± 8.0 pF Trimmer Capacitor, Johanson |
Q1 Ð Bias Transistor BD136 PNP |
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C2, C3, C23, C24 Ð 43 pF, 100 mil, ATC Chip Capacitor |
R1, R12 Ð 39 Ohm, 2.0 W |
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C4, C5, C18, C19, C21, C22 Ð 820 pF , 100 mil, Chip Capacitor, Kemet |
R3, R4, R5, R6 |
Ð 4.0 x 39 Ohm, 1/8 W, Chips in Parallel, |
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C6, C7, C11, C12 Ð 10 mF, Lytic Capacitor, Panasonic |
R3, R4, R5, R6 |
Ð Rohm 390±J |
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C8, C9, C16, C17 Ð 100 pF, 100 mil, Chip Capacitor, Murata Erie |
TL1± TL11 Ð See Photomaster |
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C10 Ð 13 pF, 50 mil, ATC Chip Capacitor |
Balun1, Balun2, Coax 1, Coax 2 Ð 2.20 ″ 50 Ohm, 0.088″ o.d. |
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C13, C14 Ð 250 mF Lytic Capacitor, Mallory |
Balun1, Balun2, Coax 1, Coax 2 Ð |
semi±rigid coax, Micro Coax |
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C15 Ð 1.1 pF, 50 mil, ATC Chip Capacitor |
Balun1, Balun2, Coax 1, Coax 2 Ð |
UT±85±M17 |
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C20 Ð 6.8 pF, 100 mil, ATC Chip Capacitor |
Board Ð 1/32 ″ Glass Teflon, Arlon GX±0300±55±22, er = 2.55 |
L1, L2, L3, L4, L5, L6 Ð 5 T urns 20 AWG, IDIA 0.126″ choke |
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Figure 1. MRF897 Broadband Test Circuit |
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MRF897 |
MOTOROLA RF DEVICE DATA |
2 |
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45 |
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45 |
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PIN = 3 W |
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40 |
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40 |
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f = 800 MHz |
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(WATTS) |
35 |
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(WATTS) |
35 |
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2.5 W |
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2 W |
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30 |
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30 |
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900 MHz |
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POWER |
25 |
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POWER |
25 |
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1.5 W |
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960 MHz |
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20 |
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20 |
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OUTPUT, |
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OUTPUT, |
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1 W |
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VCC = 24 Vdc |
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10 |
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10 |
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15 |
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15 |
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0.5 W |
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o |
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Icq = 125 mA |
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o |
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VCC = 24 Vdc |
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P |
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P |
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5 |
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5 |
Icq = 125 mA |
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0 |
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0 |
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2.5 |
3.0 |
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0.0 |
0.5 |
1.0 |
1.5 |
2.0 |
800 |
820 |
840 |
860 |
880 |
900 |
920 |
940 |
960 |
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PIN, INPUT POWER (WATTS) |
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f, FREQUENCY (MHz) |
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Figure 2. Output Power versus Input Power |
Figure 3. Output Power versus Frequency |
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45 |
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(dBc) |
±25 |
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40 |
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PIN = 2.5 W |
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±30 |
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DISTORTION |
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POWER(WATTS) |
35 |
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±35 |
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30 |
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1.5 W |
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±40 |
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25 |
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±45 |
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20 |
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±50 |
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OUTPUT |
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INTERMODULATION |
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15 |
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0.5 W |
±55 |
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±60 |
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, |
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o10 |
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P |
5 |
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f = 900 MHz |
±65 |
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IMD, |
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Icq = 125 mA |
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0 |
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±70 |
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16 |
18 |
20 |
22 |
24 |
26 |
28 |
30 |
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14 |
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VCC, SUPPLY VOLTAGE (VOLTS) |
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3RD ORDER |
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5TH |
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7TH |
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f1 |
= 900 MHz |
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f2 |
= 900.1 MHz |
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VCC = 24 Vdc |
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Icq = 125 mA |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
35 |
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Po, OUTPUT POWER (WATTS±PEP) |
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Figure 4. Output Power versus Supply Voltage |
Figure 5. Intermodulation versus Output Power |
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14.0 |
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12 |
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50 |
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13.5 |
Icq = 400 mA |
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GPE |
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(%) |
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(dB)GAINPOWER |
13.0 |
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(dB)GAIN |
11 |
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45 |
EFFICIENCY,η |
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12.5 |
300 mA |
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10 |
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40 |
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η |
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12.0 |
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250 mA |
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11.5 |
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9 |
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35 |
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PE |
200 mA |
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POWER, |
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11.0 |
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8 |
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30 |
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, |
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Icq = 125 mA |
G |
6 |
Icq = 125 mA |
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20 |
1.51.0 2.0 |
INPUTVSWR |
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G |
9.0 |
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10.5 |
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PE |
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INPUT VSWR |
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10.0 |
125 mA |
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f = 900 MHz |
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POUT = 30 W (PEP) |
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25 |
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9.5 |
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VCC = 24 Vdc |
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VCC = 24 Vdc |
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0.01 |
0.1 |
1 |
10 |
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840 |
850 |
860 |
870 |
880 |
890 |
900 |
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Po, OUTPUT POWER, (WATTS) |
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f, FREQUENCY (MHz) |
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Figure 6. Power Gain versus Output Power |
Figure 7. Broadband Test Fixture Performance |
MOTOROLA RF DEVICE DATA |
MRF897 |
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3 |
f |
Zin |
ZOL* |
MHz |
Ohms |
Ohms |
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800 |
1.0 + j10.3 |
5.9 ± j0.4 |
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850 |
1.5 + j10.5 |
5.7 + j2.6 |
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900 |
1.8 + j11.0 |
5.9 + j3.4 |
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960 |
2.2 + j11.4 |
6.2 + j4.4 |
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ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device operates at a given
ZOL* = output power, voltage and frequency.
NOTE: Zin & ZOL* are given from base±to±base and
collector±to±collector respectively.
f = 800 MHz
900
850
960
Zin
960
900
850 |
Zo = 10 Ohms |
ZOL*
f = 800 MHz
Po = 300 W (PEP), VCC = 24 V
Figure 8. Series Equivalent Input/Output Impedances
MRF897 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
±A± |
Q 2 PL |
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U |
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0.51 (0.020) M |
T |
A |
M |
B |
M |
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1 |
2 |
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±B± |
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3 |
4 |
5 |
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K
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G |
STYLE 1: |
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D |
PIN 1. |
BASE |
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N |
2. |
BASE |
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J |
E |
3. |
COLLECTOR |
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4. |
COLLECTOR |
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H |
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C |
5. |
EMITTER |
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±T± |
SEATING |
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PLANE |
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NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
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INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.739 |
0.750 |
18.77 |
19.05 |
B |
0.240 |
0.260 |
6.10 |
6.60 |
C |
0.165 |
0.198 |
4.19 |
5.03 |
D |
0.055 |
0.065 |
1.40 |
1.65 |
E |
0.055 |
0.070 |
1.40 |
1.78 |
G |
0.110 |
0.130 |
2.79 |
3.30 |
H |
0.079 |
0.091 |
2.01 |
2.31 |
J |
0.003 |
0.005 |
0.08 |
0.13 |
K |
0.180 |
0.220 |
4.57 |
5.59 |
N |
0.315 |
0.330 |
8.00 |
8.38 |
Q |
0.125 |
0.135 |
3.18 |
3.42 |
U |
0.560 BSC |
14.22 BSC |
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CASE 395B±01
ISSUE A
MOTOROLA RF DEVICE DATA |
MRF897 |
|
5 |