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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5400/D

Amplifier Transistors

PNP Silicon

				COLLECTOR
					3
			2


			BASE

					1
						EMITTER
MAXIMUM RATINGS

Rating	Symbol	2N5400	2N5401			Unit

Collector± Emitter Voltage	VCEO	120	150			Vdc
Collector± Base Voltage	VCBO	130	160			Vdc
Emitter± Base Voltage	VEBO	5.0				Vdc
Collector Current Ð Continuous	IC	600				mAdc
Total Device Dissipation @ TA = 25°C	PD	625				mW
Derate above 25°C		5.0				mW/°C

Total Device Dissipation @ TC = 25°C	PD	1.5				Watts
Derate above 25°C		12				mW/°C

Operating and Storage Junction	TJ, Tstg	± 55 to +150				°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max				Unit

Thermal Resistance, Junction to Ambient	RqJA	200				°C/W
Thermal Resistance, Junction to Case	RqJC	83.3				°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5400

2N5401*

*Motorola Preferred Device

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)		V(BR)CEO	120	Ð	Vdc
(IC = 1.0 mAdc, IB = 0)	2N5400		120	Ð
	2N5401		150	Ð

Collector± Base Breakdown Voltage		V(BR)CBO	130	Ð	Vdc
(IC = 100 mAdc, IE = 0)	2N5400		130	Ð
	2N5401		160	Ð

Emitter± Base Breakdown Voltage		V(BR)EBO	5.0	Ð	Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current		ICBO	Ð	100	nAdc
(VCB = 100 Vdc, IE = 0)	2N5400		Ð	100	nAdc
(VCB = 120 Vdc, IE = 0)	2N5401		Ð	50
(VCB = 100 Vdc, IE = 0, TA = 100°C)	2N5400		Ð	100	μAdc
(VCB = 120 Vdc, IE = 0, TA = 100°C)	2N5401		Ð	50
Emitter Cutoff Current		IEBO	Ð	50	nAdc
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

2N5400	2N5401
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
	Characteristic		Symbol	Min	Max	Unit

ON CHARACTERISTICS(1)
DC Current Gain			hFE	30	Ð	Ð
(IC = 1.0 mAdc, VCE = 5.0 Vdc)		2N5400		30	Ð
		2N5401		50	Ð
(IC = 10 mAdc, VCE = 5.0 Vdc)		2N5400		40	180
		2N5401		60	240
(IC = 50 mAdc, VCE = 5.0 Vdc)		2N5400		40	Ð
		2N5401		50	Ð

Collector± Emitter Saturation Voltage			VCE(sat)	Ð	0.2	Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)				Ð	0.2
(IC = 50 mAdc, IB = 5.0 mAdc)				Ð	0.5
Base ± Emitter Saturation Voltage			VBE(sat)	Ð	1.0	Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)				Ð	1.0
(IC = 50 mAdc, IB = 5.0 mAdc)				Ð	1.0
SMALL± SIGNAL CHARACTERISTICS

Current± Gain Ð Bandwidth Product			fT	100	400	MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)		2N5400		100	400
		2N5401		100	300

Output Capacitance			Cobo	Ð	6.0	pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small±Signal Current Gain			hfe	30	200	Ð
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)		2N5400		30	200
		2N5401		40	200

Noise Figure			NF	Ð	8.0	dB
(IC = 250 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

												2N5400	2N5401
	200
	150
			TJ = 125°C
GAIN	100
GAIN			25°C
CURRENT	70		25°C
	70
	50
,
FE			± 55°C
h

	30									VCE = ± 1.0 V
										VCE = ± 5.0 V
	20	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100
	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

1.0
0.9
0.8
0.7
0.6		IC = 1.0 mA			10 mA	30 mA			100 mA
0.5		IC = 1.0 mA			10 mA	30 mA			100 mA
0.5
0.4
0.3
0.2
0.1
0
0.005	0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

	103
μA)	102	VCE = 30 V
μA)	102
(					IC = ICES
CURRENT	101				IC = ICES
	101
	100	TJ = 125°C
, COLLECTOR	100
	10±1		75°C
	10±1
	±2	REVERSE				FORWARD
C	±2		25°C
I	10		25°C
	10±3
	0.3	0.2	0.1	0	0.1	0.2	0.3	0.4	0.5	0.6	0.7
			VBE, BASE±EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Cut±Off Region

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5400		2N5401
	1.0												2.5	TJ = ± 55°C to 135°C
	TJ = 25°C											°C)	2.0	TJ = ± 55°C to 135°C
	0.9											°C)
	0.9											(mV/
(VOLTS)VOLTAGEV,	0.8											(mV/	1.5	θVB for VBE(sat)
(VOLTS)VOLTAGEV,	0.7											COEFFICIENTTEMPERATURE	1.0	θVB for VBE(sat)
	0.7												1.0
	VBE(sat) @ IC/IB = 10												0.5
	0.6												0.5	θVC for VCE(sat)
	0.5												0	θVC for VCE(sat)
	0.5												0
	0.4												±0.5
	0.3												±1.0
	0.2	VCE(sat) @ IC/IB = 10											±1.5
	0.1	VCE(sat) @ IC/IB = 10											±2.0
	0.1											V	±2.0
												,
	0											θ	±2.5
	0												±2.5
	0.1	0.2 0.3	0.5	1.0	2.0 3.0	5.0	10	20	30	50	100		0.1	0.2 0.3	0.5	1.0	2.0 3.0	5.0	10	20	30	50	100
				IC, COLLECTOR CURRENT (mA)											IC, COLLECTOR CURRENT (mA)

Figure 4. ªOnº Voltages

Figure 5. Temperature Coefficients

10.2 V

Vin

10 μs

INPUT PULSE

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

VBB	VCC
+ 8.8 V	±30 V
100	3.0 k RC

0.25 μF	RB	Vout
0.25 μF

	5.1 k
Vin	100	1N914

Values Shown are for IC @ 10 mA

	100									TJ = 25°C
	70									TJ = 25°C
	50
(pF)	30
(pF)	20							Cibo
CAPACITANCE	20							Cibo
	10
	7.0									Cobo
	5.0									Cobo
C,	3.0
	3.0
	2.0
	1.0
	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20
				VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

t, TIME (ns)

1000
700	IC/IB = 10						tr @ VCC = 120 V
500	TJ = 25°C						tr @ VCC = 120 V
300								tr @ VCC = 30 V
200								tr @ VCC = 30 V
200
100
70
50
30
20						td @ VBE(off) = 1.0 V
						VCC = 120 V
10
0.2 0.3		0.5	1.0	2.0 3.0	5.0	10	20	30	50	100	200

IC, COLLECTOR CURRENT (mA)

	2000
	1000	IC/IB = 10							tf @ VCC = 120 V
	700	IC/IB = 10							tf @ VCC = 120 V
	700	TJ = 25°C
	500
(ns)	300		tf @ VCC = 30 V
TIME	200		ts @ VCC = 120 V
TIME			ts @ VCC = 120 V
t,	100
	100
	70
	50
	30
	20
	0.2 0.3		0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200
				IC, COLLECTOR CURRENT (mA)

Figure 8. Turn±On Time

Figure 9. Turn±Off Time

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5400 2N5401

PACKAGE DIMENSIONS

	A	B
		B
	R
		P
		L
	SEATING	F
	PLANE	K
		D
	X X	J
		G
	H	SECTION X±X
	V	SECTION X±X
	V	C
	1	N
		N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.175	0.205	4.45	5.20
B	0.170	0.210	4.32	5.33
C	0.125	0.165	3.18	4.19
D	0.016	0.022	0.41	0.55
F	0.016	0.019	0.41	0.48
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.015	0.020	0.39	0.50
K	0.500	±±±	12.70	±±±
L	0.250	±±±	6.35	±±±
N	0.080	0.105	2.04	2.66
P	±±±	0.100	±±±	2.54
R	0.115	±±±	2.93	±±±
V	0.135	±±±	3.43	±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola Small±Signal Transistors, FETs and Diodes Device Data

Источник: https://studfile.net/preview/16503396/

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