Документ: 2N6346A, страницы 1-5 | База учебных материалов

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6346A/D

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering.

•Blocking Voltage to 800 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability

•Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability

•Gate Triggering Guaranteed in Four Modes (2N6346A, 2N6347A, 2N6348A, 2N6349A)

•For 400 Hz Operation, Consult Factory

•8 Ampere Devices Available as 2N6342 thru 2N6349

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

2N6346A thru 2N6349A

TRIACs

12 AMPERES RMS

200 thru 800 VOLTS

MT1

MT2

G

CASE 221A-04 (TO-220AB)

STYLE 4

Rating		Symbol	Value	Unit

*Peak Repetitive Off-State Voltage(1)		VDRM		Volts
(Gate Open, TJ = ±40 to +110°C
1/2 Sine Wave 50 to 60 Hz, Gate Open
	2N6346A		200
	2N6347A		400
	2N6348A		600
	2N6349A		800

*RMS On-State Current	(TC = +80°C)	IT(RMS)	12	Amps
(Full Cycle Sine Wave 50 to 60 Hz)	(TC = +95°C)		6
*Peak Non-repetitive Surge Current		ITSM	120	Amps
(One Full Cycle, 60 Hz, TC = +80°C)
Preceded and Followed by Rated Current

Circuit Fusing (t = 8.3 ms)		I2t	59	A2s
*Peak Gate Power (TC = +80°C, Pulse Width = 2 μs)		PGM	20	Watts
*Average Gate Power (TC = +80°C, t = 8.3 ms)		PG(AV)	0.5	Watt
*Peak Gate Current		IGM	2	Amps
*Peak Gate Voltage		VGM	±10	Volts
*Operating Junction Temperature Range		TJ	±40 to +125	°C
*Storage Temperature Range		Tstg	±40 to +150	°C

*Indicates JEDEC Registered Data.

1.VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

REV 2

Motorola, Inc. 1995

2N6346A thru 2N6349A

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

*Thermal Resistance, Junction to Case

RθJC

2

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

*Peak Blocking Current

TJ = 25°C

IDRM

Ð

10

μA

(VD = Rated VDRM, gate open)

TJ = 110°C

Ð

2

mA

*Peak On-State Voltage (Either Direction)

VTM

Ð

1.3

1.75

Volts

(ITM =

17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)

Gate Trigger Current (Continuous dc)

IGT

mA

(VD = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

Ð

6

50

MT2(+), G(±) 2N6346A thru 2N6349A

Ð

6

75

MT2(±), G(±)

Ð

10

50

MT2(±), G(+) 2N6346A thru 2N6349A

Ð

25

75

*MT2(+), G(+); MT2(±), G(±) TC = ±40°C

Ð

100

*MT2(+), G(±); MT2(±), G(+) TC = ±40°C 2N6346A thru 2N6349A

Ð

125

Gate Trigger Voltage (Continuous dc)

VGT

Volts

(VD = 12 Vdc, RL = 100 ohms)

MT2(+), G(+)

Ð

0.9

2

MT2(+), G(±) 2N6346A thru 2N6349A

Ð

0.9

2.5

MT2(±), G(±)

Ð

1.1

2

MT2(±), G(+) 2N6346A thru 2N6349A

Ð

1.4

2.5

*MT2(+), G(+); MT2(±), G(±) TC = ±40°C

Ð

2.5

*MT2(+), G(±); MT2(±), G(+) TC = ±40°C 2N6346A thru 2N6349A

Ð

3

(VD = Rated VDRM, RL = 10 k ohms, TJ = 100°C)

*MT2(+), G(+); MT2(±), G(±)

0.2

Ð

*MT2(+), G(±); MT2(±), G(±) 2N6346A thru 2N6349A

0.2

Ð

Holding Current (Either Direction)

TC = 25°C

IH

Ð

6

40

mA

(VD = 12 Vdc, Gate Open)

(IT = 200 mA)

*TC = ±40°C

Ð

75

*Turn-On Time

tgt

Ð

1.5

2

μs

(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,

Rise Time = 0.1 μs, Pulse Width = 2 μs)

Critical Rate of Rise of Commutation Voltage

dv/dt(c)

Ð

5

Ð

V/μs

(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,

Gate Unenergized, TC = 80°C)

*Indicates JEDEC Registered Data.

FIGURE 1 ± RMS CURRENT DERATING

FIGURE 2 ± ON-STATE POWER DISSIPATION

	110				30°				20
					30°
	100					60°			16
	100					90°
						90°
							120°		12
								180°	12
	90							180°
TEMPERATURECASE C)°(	90							, AVERAGE(WATTS)POWER
				α					8.0
									8.0
	80		α

,								AV
C									4.0
C									4.0
T		α = CONDUCTION ANGLE						P
		α = CONDUCTION ANGLE
	70					dc			0
	70
	0	2.0	4.0	6.0	8.0	10	12	14
	0	2.0	4.0	6.0	8.0	10	12	14
			IT(RMS), RMS ON-STATE CURRENT, (AMP)

					dc
		α
		α
	α = CONDUCTION ANGLE
		TJ = 110°C				180°
					60° 90° 120°
				α = 30°
0	2.0	4.0	6.0	8.0	10	12	14
		IT(RMS), RMS ON-STATE CURRENT (AMP)

2	Motorola Thyristor Device Data

Vgt , GATE TRIGGER VOLTAGE (VOLTS)

2N6346A thru 2N6349A

FIGURE 3 ± TYPICAL GATE TRIGGER VOLTAGE

FIGURE 4 ± TYPICAL GATE TRIGGER CURRENT

1.8											50
1.6						OFF-STATE VOLTAGE = 12 V				(mA)						OFF-STATE VOLTAGE = 12 V
										(mA)
						QUADRANT 4				CURRENT	20
						QUADRANT 4				CURRENT	20
1.4											30
1.4
1.2										TRIGGER
1.0										TRIGGER
1.0
0.8			1							GATE			1
0.8			1							GATE	QUADRANT 2
											10
	QUADRANTS		2							,			3
0.6			3							GT	7.0		4
0.6										I	7.0

0.4	±40										5.0
±60	±40	±20	0	20	40	60	80	100	120	140	±60	±40	±20	0	20	40	60	80	100	120	140
		±20	TJ, JUNCTION TEMPERATURE (°C)											TJ, JUNCTION TEMPERATURE (°C)
			TJ, JUNCTION TEMPERATURE (°C)											TJ, JUNCTION TEMPERATURE (°C)

iTM , INSTANTANEOUS ON-STATE CURRENT (AMP)

FIGURE 5 ± ON-STATE CHARACTERISTICS

100

70

50

30

20

TJ = 100°C	°
	25 C

10

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1
0.4	0.8	1.2	1.6	2.0	2.4	2.8	3.2	3.6	4.0	4.4

vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

FIGURE 6 ± TYPICAL HOLDING CURRENT

	20
	20												GATE OPEN
													GATE OPEN

(mA)									MAIN		TERMINAL #1
(mA)											POSITIVE
CURRENT	10										POSITIVE
CURRENT

HOLDING,	7.0



	5.0

				MAIN		TERMINAL #2
				MAIN		TERMINAL #2
H						POSITIVE
H
I	3.0


	2.0
	2.0
	±60	±40	±20		0		20	40		60		80	100	120	140
					TJ, JUNCTION TEMPERATURE (°C)

FIGURE 7 ± MAXIMUM NON-REPETITIVE SURGE CURRENT

	100
(AMP)	80
CURRENT	80
CURRENT	60
SURGE	40	CYCLE
, PEAK	40	CYCLE
, PEAK		TJ = 100°C
TSM	20	TJ = 100°C
	20	f = 60 Hz
		f = 60 Hz

I		Surge is preceded and followed by rated current
		Surge is preceded and followed by rated current

0

1.0

2.0

3.0

5.0

7.0

10

NUMBER OF CYCLES

Motorola Thyristor Device Data

3

2N6346A thru 2N6349A

FIGURE 8 ± TYPICAL THERMAL RESPONSE

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

1.0

0.5

0.2

ZθJC(t) = r(t) •RθJC

0.1
0.05
0.02
0.01	0.2	0.5	1.0	2.0	5.0	20	50	100	200	500	1.0 k	2.0 k	5.0 k	10 k
0.1	0.2	0.5	1.0	2.0	5.0	20	50	100	200	500	1.0 k	2.0 k	5.0 k	10 k

t,TIME (ms)

4	Motorola Thyristor Device Data

2N6346A thru 2N6349A

PACKAGE DIMENSIONS

				±T±	PLANESEATING		NOTES:
							NOTES:
	B		F	C			1. DIMENSIONING AND TOLERANCING PER ANSI
	B		F	C			Y14.5M, 1982.
			T		S		2. CONTROLLING DIMENSION: INCH.
					S		3. DIMENSION Z DEFINES A ZONE WHERE ALL
							BODY AND LEAD IRREGULARITIES ARE
							ALLOWED.
Q		4	A		STYLE 4:			INCHES		MILLIMETERS
					PIN 1. MAIN TERMINAL 1			INCHES		MILLIMETERS
					PIN 1. MAIN TERMINAL 1		DIM	MIN	MAX	MIN	MAX
					2.	MAIN TERMINAL 2	DIM	MIN	MAX	MIN	MAX
			U		2.	MAIN TERMINAL 2	A	0.570	0.620	14.48	15.75
1	2	3			3.	GATE	A	0.570	0.620	14.48	15.75
1	2	3			3.	GATE	B	0.380	0.405	9.66	10.28
H					4.	MAIN TERMINAL 2	B	0.380	0.405	9.66	10.28
					4.	MAIN TERMINAL 2	C	0.160	0.190	4.07	4.82
							C	0.160	0.190	4.07	4.82
			K				D	0.025	0.035	0.64	0.88
Z			K				F	0.142	0.147	3.61	3.73
Z							G	0.095	0.105	2.42	2.66
							H	0.110	0.155	2.80	3.93
							J	0.014	0.022	0.36	0.55
L					R		K	0.500	0.562	12.70	14.27
L					R		L	0.045	0.055	1.15	1.39
							L	0.045	0.055	1.15	1.39
V				J			N	0.190	0.210	4.83	5.33
V				J			Q	0.100	0.120	2.54	3.04
							Q	0.100	0.120	2.54	3.04
G							R	0.080	0.110	2.04	2.79
			D				S	0.045	0.055	1.15	1.39
			D				T	0.235	0.255	5.97	6.47
	N						T	0.235	0.255	5.97	6.47
	N						U	0.000	0.050	0.00	1.27
							V	0.045	±±±	1.15	±±±
							Z	±±±	0.080	±±±	2.04

CASE 221A-04 (TO±220AB)

Motorola Thyristor Device Data

5

Материал: 2N6346A

Смотрите также: