Материал: 9015

PowerMOS transistor

BUK102-50GL

Logic level TOPFET

DESCRIPTION

QUICK REFERENCE DATA

Monolithic temperature and

SYMBOL

PARAMETER

MAX.

UNIT

overload protected logic level power

MOSFET in a 3 pin plastic

VDS

Continuous drain source voltage

50

V

envelope, intended as a general

ID

Continuous drain current

45

A

purpose switch for automotive

PD

Total power dissipation

125

W

systems and other applications.

Tj

Continuous junction temperature

150

˚C

APPLICATIONS

RDS(ON)

Drain-source on-state resistance

35

mΩ

VIS = 5 V

General controller for driving

lamps

motors

solenoids

heaters

FEATURES

FUNCTIONAL BLOCK DIAGRAM

Vertical power DMOS output

stage

DRAIN

Low on-state resistance

Overload protection against

over temperature

Overload protection against

O/V

short circuit load

CLAMP

Latched overload protection

POWER

reset by input

INPUT

MOSFET

5 V input level

RIG

Low threshold voltage

also allows 5 V control

Control of power MOSFET

LOGIC AND

and supply of overload

PROTECTION

protection circuits

derived from input

ESD protection on input pin

Overvoltage clamping for turn

off of inductive loads

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

tab

D

TOPFET

1

input

2

drain

I

P

3

source

tab

drain

1 2 3

S

January 1993

1

Rev 1.200

PowerMOS transistor

BUK102-50GL

Logic level TOPFET

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDSS

Continuous off-state drain source

VIS = 0 V

-

50

V

voltage1

VIS

Continuous input voltage

-

≤ 25 ˚C; VIS = 5 V

0

6

V

ID

Continuous drain current

Tmb

-

45

A

ID

Continuous drain current

Tmb

≤ 100 ˚C; VIS = 5 V

-

28

A

IDRM

Repetitive peak on-state drain current

Tmb

≤ 25 ˚C; VIS = 5 V

-

180

A

PD

Total power dissipation

Tmb

≤ 25 ˚C

-

125

W

Tstg

Storage temperature

-

-55

150

˚C

T

Continuous junction temperature2

normal operation

-

150

˚C

j

Tsold

Lead temperature

during soldering

-

250

˚C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

Protection supply voltage3

for valid protection

4

-

V

ISP

Over temperature protection

VDDP(T)

Protected drain source supply voltage

VIS = 5

V

-

50

V

Short circuit load protection

V

Protected drain source supply voltage4

V = 5

V

-

24

V

DDP(P)

IS

PDSM

Instantaneous overload dissipation

Tmb = 25 ˚C

-

2.1

kW

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

IDROM

Repetitive peak clamping current

VIS = 0 V

-

45

A

EDSM

Non-repetitive clamping energy

Tmb

≤ 25 ˚C; IDM = 25 A;

-

1

J

VDD

≤ 25 V; inductive load

EDRM

Repetitive clamping energy

Tmb

≤ 85 ˚C; IDM = 16 A;

-

80

mJ

VDD

≤ 20 V; f = 250 Hz

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VC

Electrostatic discharge capacitor

Human body model;

-

2

kV

voltage

C = 250 pF; R = 1.5 kΩ

January 1993

2

Rev 1.200

PowerMOS transistor

BUK102-50GL

Logic level TOPFET

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

Rth j-mb

Junction to mounting base

-

-

0.8

1.0

K/W

Rth j-a

Junction to ambient

in free air

-

60

-

K/W

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(CL)DSS

Drain-source clamping voltage

VIS = 0 V; ID = 10 mA

50

-

-

V

V(CL)DSS

Drain-source clamping voltage

VIS = 0 V; IDM = 2 A; tp £ 300 ms;

-

-

70

V

d £ 0.01

mA

IDSS

Zero input voltage drain current

VDS = 12 V; VIS = 0 V

-

0.5

10

IDSS

Zero input voltage drain current

VDS = 50 V; VIS = 0 V

-

1

20

mA

IDSS

Zero input voltage drain current

VDS = 40 V; VIS = 0 V; Tj = 125 ˚C

-

10

100

mA

RDS(ON)

Drain-source on-state

IDM = 25 A; VIS = 5 V

-

30

35

mW

resistance

tp £ 300 ms; d £ 0.01

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

EDS(TO)

Short circuit load protection1

Tmb = 25 ˚C; L £ 10 mH

Overload threshold energy

VDD = 13 V; VIS = 5 V

-

1.1

-

J

td sc

Response time

VDD = 13 V; VIS = 5 V

-

0.8

-

ms

Over temperature protection

VIS = 5 V; from ID ³ 2 A2

Tj(TO)

Threshold junction temperature

150

-

-

˚C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VIS(TO)

Input threshold voltage

VDS = 5 V; ID = 1 mA

1.0

1.5

2.0

V

IIS

Input supply current

VIS = 5 V; normal operation

-

0.2

0.35

mA

V

Protection reset voltage3

2.0

2.6

3.5

V

ISR

VISR

Protection reset voltage

Tj = 150 ˚C

1.0

-

-

IISL

Input supply current

VIS = 5 V; protection latched

2

3.8

10

mA

V(BR)IS

Input clamp voltage

II = 10 mA

6

-

-

V

RIG

Input series resistance

to gate of power MOSFET

-

1.5

-

kW

January 1993

3

Rev 1.200

PowerMOS transistor

BUK102-50GL

Logic level TOPFET

TRANSFER CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

gfs

Forward transconductance

VDS = 10 V; IDM = 25 A tp ≤ 300 μs;

17

28

-

S

δ ≤

0.01

I

Drain current1

V

= 13 V; V = 5 V

-

60

-

A

D(SC)

DS

IS

SWITCHING CHARACTERISTICS

Tmb = 25 ˚C. RI = 50 Ω . Refer to waveform figures and test circuits.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

td on

Turn-on delay time

VDD = 13 V; VIS = 5 V

-

2

-

μs

tr

Rise time

resistive load RL = 1.1 Ω

-

8

-

μs

td off

Turn-off delay time

VDD = 13 V; VIS = 0 V

-

8

-

μs

tf

Fall time

resistive load RL = 1.1 Ω

-

8

-

μs

td on

Turn-on delay time

VDD = 13 V; VIS = 5 V

-

3.7

-

μs

tr

Rise time

inductive load IDM = 11 A

-

3.7

-

μs

td off

Turn-off delay time

VDD = 13 V; VIS = 0 V

-

13

-

μs

tf

Fall time

inductive load IDM = 11 A

-

1.4

-

μs

REVERSE DIODE LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

IS

Continuous forward current

Tmb ≤ 25 ˚C; VIS = 0 V

-

50

A

REVERSE DIODE CHARACTERISTICS

Tmb = 25 ˚C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VSDS

Forward voltage

IS = 50 A; VIS = 0 V; tp = 300 μs

-

1.0

1.5

V

t

Reverse recovery time

not applicable2

-

-

-

-

rr

ENVELOPE CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Ld

Internal drain inductance

Measured from contact screw on

-

3.5

-

nH

tab to centre of die

Ld

Internal drain inductance

Measured from drain lead 6 mm

-

4.5

-

nH

from package to centre of die

Ls

Internal source inductance

Measured from source lead 6 mm

-

7.5

-

nH

from package to source bond pad

January 1993

4

Rev 1.200

Philips Semiconductors

Product specification

PowerMOS transistor

BUK102-50GL

Logic level TOPFET

120

PD%

Normalised Power Derating

Zth / (K/W)

BUK102-50GL

10

110

100

90

1

D =

80

0.5

70

0.2

60

0.1

0.1

50

0.05

40

0.02

30

0.01

0

P

tp

D =

tp

20

D

T

10

T

t

0

0.001

0

20

40

60

80

100

120

140

1E-07

1E-05

1E-03

1E-01

1E+01

Tmb /

C

t / s

Fig.2.

Normalised limiting power dissipation.

Fig.5.

Transient thermal impedance.

PD% = 100×PD/PD(25 ˚C) = f(Tmb)

Zth j-mb = f(t); parameter D = tp/T

120

ID%

Normalised Current Derating

ID / A

BUK102-50GL

120

110

110

VIS / V =

100

100

90

90

6.0

80

80

5.5

70

70

5.0

60

60

4.5

50

50

4.0

40

40

3.5

30

30

20

20

3.0

10

10

2.5

0

0

20

40

60

80

100

120

140

0

0

2

4

6

8

10

12

14

16

18

20

Tmb /

C

VDS / V

Fig.3.

Normalised continuous drain current.

Fig.6.

Typical output characteristics, Tj

= 25 ˚C.

ID% = 100×ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V

ID = f(VDS); parameter VIS; tp = 250 ms

& tp < td sc

1000

ID & IDM / A

BUK102-50GL

ID / A

BUK102-50GL

100

Overload protection characteristics not shown

90

VIS / V =

tp =

80

5.0

VDS/ID

70

100

=

10 us

4.5

RDS(ON)

60

100 us

50

4.0

1 ms

40

3.5

10

DC

30

10 ms

20

3.0

100 ms

10

2.5

1

0

1

3

5

1

10

100

0

2

4

VDS / V

VDS / V

Fig.4. Safe operating area. Tmb = 25 ˚C

Fig.7. Typical on-state characteristics, Tj = 25 ˚C.

ID & IDM = f(VDS); IDM single pulse; parameter tp

ID = f(VDS); parameter VIS; tp = 250 ms

January 1993

5

Rev 1.200