Материал: 9044
Philips Semiconductors |
Product Specification |
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PowerMOS transistor |
BUK452-100A/B |
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GENERAL DESCRIPTION |
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QUICK REFERENCE DATA |
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N-channel enhancement mode |
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SYMBOL |
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PARAMETER |
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MAX. |
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MAX. |
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UNIT |
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field-effect power transistor in a |
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BUK452 |
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-100A |
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-100B |
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plastic envelope. |
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The device is intended for use in |
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VDS |
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Drain-source voltage |
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100 |
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100 |
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V |
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Switched Mode Power Supplies |
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ID |
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Drain current (DC) |
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11 |
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10 |
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A |
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(SMPS), motor control, welding, |
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Ptot |
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Total power dissipation |
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60 |
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60 |
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DC/DC and AC/DC converters, and |
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Tj |
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Junction temperature |
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175 |
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175 |
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˚C |
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in general purpose switching |
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RDS(ON) |
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Drain-source on-state |
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0.25 |
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0.3 |
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Ω |
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applications. |
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resistance |
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PINNING - TO220AB |
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PIN CONFIGURATION |
SYMBOL |
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PIN DESCRIPTION
1gate
2drain
3source tab drain
d
tab |
g
1 2 3 |
s |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VDS |
Drain-source voltage |
- |
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100 |
V |
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VDGR |
Drain-gate voltage |
RGS = 20 kΩ |
- |
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100 |
V |
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±VGS |
Gate-source voltage |
- |
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30 |
V |
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-100A |
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-100B |
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ID |
Drain current (DC) |
Tmb = |
25 ˚C |
- |
11 |
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10 |
A |
ID |
Drain current (DC) |
Tmb = 100 ˚C |
- |
7.7 |
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7 |
A |
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IDM |
Drain current (pulse peak value) |
Tmb = |
25 ˚C |
- |
44 |
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40 |
A |
Ptot |
Total power dissipation |
Tmb = |
25 ˚C |
- |
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60 |
W |
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Tstg |
Storage temperature |
- |
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- 55 |
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175 |
˚C |
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Tj |
Junction Temperature |
- |
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175 |
˚C |
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THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-mb |
Thermal resistance junction to |
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2.5 |
K/W |
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mounting base |
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Rth j-a |
Thermal resistance junction to |
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60 |
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K/W |
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ambient |
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April 1993 |
1 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
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PowerMOS transistor |
BUK452-100A/B |
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STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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V(BR)DSS |
Drain-source breakdown |
VGS = 0 V; ID = 0.25 mA |
100 |
- |
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V |
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voltage |
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VGS(TO) |
Gate threshold voltage |
VDS = VGS; ID = 1 mA |
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2.1 |
3.0 |
4.0 |
V |
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IDSS |
Zero gate voltage drain current |
VDS = 100 |
V; VGS = 0 |
V; Tj = 25 ˚C |
- |
1 |
10 |
μA |
IDSS |
Zero gate voltage drain current |
VDS = 100 |
V; VGS = 0 |
V; Tj =125 ˚C |
- |
0.1 |
1.0 |
mA |
IGSS |
Gate source leakage current |
VGS = ±30 V; VDS = 0 |
V |
- |
10 |
100 |
nA |
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RDS(ON) |
Drain-source on-state |
VGS = 10 V; |
BUK452-100A |
- |
0.22 |
0.25 |
Ω |
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resistance |
ID = 5.5 A |
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BUK452-100B |
- |
0.25 |
0.3 |
Ω |
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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gfs |
Forward transconductance |
VDS = 25 V; ID = 5.5 A |
3 |
4.2 |
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S |
Ciss |
Input capacitance |
VGS = 0 V; VDS = 25 V; f = 1 MHz |
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400 |
500 |
pF |
Coss |
Output capacitance |
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90 |
120 |
pF |
Crss |
Feedback capacitance |
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35 |
50 |
pF |
td on |
Turn-on delay time |
VDD = 30 V; ID = 3 A; |
- |
9 |
14 |
ns |
tr |
Turn-on rise time |
VGS = 10 V; RGS = 50 Ω; |
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25 |
40 |
ns |
td off |
Turn-off delay time |
Rgen = 50 Ω |
- |
30 |
45 |
ns |
tf |
Turn-off fall time |
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20 |
40 |
ns |
Ld |
Internal drain inductance |
Measured from contact screw on |
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3.5 |
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nH |
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tab to centre of die |
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Ld |
Internal drain inductance |
Measured from drain lead 6 mm |
- |
4.5 |
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nH |
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from package to centre of die |
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Ls |
Internal source inductance |
Measured from source lead 6 mm |
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7.5 |
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nH |
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from package to source bond pad |
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REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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IDR |
Continuous reverse drain |
- |
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11 |
A |
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current |
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IDRM |
Pulsed reverse drain current |
- |
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44 |
A |
VSD |
Diode forward voltage |
IF = 11 |
A ; VGS = 0 V |
- |
1.2 |
1.5 |
V |
trr |
Reverse recovery time |
IF = 11 |
A; -dIF/dt = 100 A/μs; |
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90 |
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ns |
Qrr |
Reverse recovery charge |
VGS = 0 V; VR = 30 V |
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0.35 |
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μC |
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AVALANCHE LIMITING VALUE
Tmb = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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WDSS |
Drain-source non-repetitive |
ID = 11 A ; VDD ≤ 50 V ; |
- |
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35 |
mJ |
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unclamped inductive turn-off |
VGS = 10 V ; RGS = 50 |
Ω |
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energy |
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April 1993 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
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PowerMOS transistor |
BUK452-100A/B |
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120 |
PD% |
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Normalised Power Derating |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
180 |
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Tmb / C |
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Fig.1. |
Normalised power dissipation. |
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PD% = 100×PD/PD 25 ˚C = f(Tmb) |
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ID% |
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Normalised Current Derating |
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120 |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
180 |
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Tmb / C |
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Fig.2. Normalised continuous drain current. |
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ID% = 100×ID/ID 25 ˚C = f(Tmb); conditions: VGS |
³ 10 V |
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100 |
ID / A |
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A |
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BUK452-100 |
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VDS/ID |
B |
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= |
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RDS(ON) |
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tp = 10 us |
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10 |
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100 us
DC |
1 ms |
1 |
10 ms |
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100 ms |
0.1 |
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10 |
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1 |
100 |
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VDS / V |
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Fig.3. |
Safe operating area. Tmb = 25 ˚C |
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ID & IDM = f(VDS); IDM single pulse; parameter tp
1E+01 |
Zth j-mb / (K/W) |
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BUKX52 |
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1E+00 |
0.5 |
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0.2 |
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0.1 |
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1E-01 |
0.05 |
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0.02 |
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P |
tp |
D = |
tp |
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0 |
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D |
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T |
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T |
t |
1E-02 |
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1E-05 |
1E-03 |
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1E-01 |
1E+01 |
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1E-07 |
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t / s |
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Fig.4. Transient thermal impedance. |
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Zth j-mb = f(t); parameter D = tp/T |
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ID / A |
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BUK452-100A |
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20 |
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20 |
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15 |
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VGS / V = |
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10 |
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8 |
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15 |
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7 |
10 |
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6 |
5 |
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5 |
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4 |
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0 |
2 |
4 |
6 |
8 |
10 |
0 |
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VDS / V |
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Fig.5. Typical output characteristics, Tj = 25 ˚C. |
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ID = f(VDS); parameter VGS |
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RDS(ON) / Ohm |
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BUK452-100A |
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1.0 |
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0.8 |
4.5 |
5 |
5.5 |
6 |
6.5 |
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VGS / V = |
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7 |
7.5 |
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0.6 |
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8 |
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10 |
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0.4 |
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20 |
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0.2 |
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0 |
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0 |
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4 |
6 |
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10 |
12 |
14 |
16 |
18 |
20 |
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ID / A |
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Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS
April 1993 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
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PowerMOS transistor |
BUK452-100A/B |
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ID / A |
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BUK452-100A |
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20 |
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16 |
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Tj / C = |
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25 |
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12 |
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150 |
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8 |
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4 |
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0 |
2 |
4 |
6 |
8 |
10 |
0 |
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VGS / V |
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Fig.7. |
Typical transfer characteristics. |
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ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj |
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gfs / S |
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BUK452-100A |
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5 |
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4 |
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3 |
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2 |
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1 |
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0 |
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0 |
2 |
4 |
6 |
8 |
10 |
12 |
14 |
16 |
18 |
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ID / A |
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Fig.8. |
Typical transconductance, Tj = 25 ˚C. |
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gfs = f(ID); conditions: VDS = 25 V |
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a |
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Normalised RDS(ON) = f(Tj) |
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2.4 |
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2.2 |
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2.0 |
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1.8 |
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1.6 |
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1.4 |
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1.2 |
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1.0 |
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0.8 |
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0.6 |
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0.4 |
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0.2 |
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0 |
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-60 |
-20 |
20 |
60 |
100 |
140 |
180 |
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Tj / |
C |
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Fig.9. Normalised drain-source on-state resistance. |
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a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5.5 A; VGS = 10 V |
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VGS(TO) / V |
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4 |
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max. |
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3 |
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typ. |
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min. |
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2 |
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1 |
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0 |
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-60 |
-20 |
20 |
60 |
100 |
140 |
180 |
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Tj / |
C |
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Fig.10. |
Gate threshold voltage. |
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VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS |
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ID / A |
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SUB-THRESHOLD CONDUCTION |
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1E-01 |
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1E-02 |
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1E-03 |
2 % |
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typ |
98 % |
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1E-04 |
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1E-05 |
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1E-06 |
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0 |
1 |
2 |
3 |
4 |
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VGS / V |
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Fig.11. Sub-threshold drain current. |
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ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS |
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C / pF |
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BUK4y2-100 |
10000 |
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1000 |
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Ciss |
100 |
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Coss |
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Crss |
10 |
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0 |
20 |
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40 |
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VDS / V |
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Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
April 1993 |
4 |
Rev 1.100 |
Philips Semiconductors |
Product Specification |
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PowerMOS transistor |
BUK452-100A/B |
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VGS / V |
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BUK452-100 |
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12 |
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10 |
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VDS / V =20 |
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8 |
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80 |
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6 |
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4 |
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2 |
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0 |
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0 |
2 |
4 |
6 |
8 |
10 |
QG / nC
Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 11 A; parameter VDS
IF / A |
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BUK452-100A |
20 |
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10 |
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Tj / C = |
150 |
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25 |
0 |
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0 |
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1 |
2 |
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VSDS / V |
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Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
WDSS% |
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120 |
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110 |
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100 |
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90 |
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80 |
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70 |
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60 |
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50 |
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40 |
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30 |
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20 |
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10 |
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0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
180 |
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Tmb / |
C |
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Fig.15. Normalised avalanche energy rating. |
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WDSS% = f(Tmb); conditions: ID = 11 A |
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+ VDD
L
VDS
-
VGS
-ID/100
0 |
T.U.T. |
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RGS
R 01 shunt
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 × LID2 × BVDSS/(BVDSS - VDD)
April 1993 |
5 |
Rev 1.100 |