Материал: 9487
DISCRETE SEMICONDUCTORS
OM2063
Wideband amplifier module
Product specification |
1995 Nov 28 |
Supersedes data of June 1991
File under Discrete Semiconductors, SC16
Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2063 |
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DESCRIPTION
A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV systems and as a general purpose amplifier for VHF and UHF applications.
PINNING |
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PIN |
DESCRIPTION |
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1 |
input |
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pin 1 identification |
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handbook, halfpage |
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2 |
common |
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3 |
common |
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1 |
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4 |
supply (+) |
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5 |
common |
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8 |
7 6 5 4 |
3 2 |
1 |
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MBA906 |
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6 |
common |
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7 |
common |
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Fig.1 |
Simplified outline. |
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8 |
output/supply (+) |
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QUICK REFERENCE DATA |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
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TYP. |
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MAX. |
UNIT |
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f |
frequency range |
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40 |
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- |
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860 |
MHz |
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ZS, ZL |
source and load impedance |
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- |
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75 |
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- |
W |
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GT |
transducer gain = ïS21ï2 |
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- |
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29 |
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- |
dB |
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DGT |
flatness of frequency response |
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- |
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1 |
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- |
dB |
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Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
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3rd order intermodulation (3-tone) |
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VHF |
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- |
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103 |
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dBmV |
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UHF |
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- |
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105 |
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- |
dBmV |
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F |
noise figure |
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- |
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3.6 |
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- |
dB |
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VB |
DC supply voltage |
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10.8 |
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12 |
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13.2 |
V |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
°C |
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1995 Nov 28 |
2 |
Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2063 |
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CIRCUIT DIAGRAM AND PRINTED-CIRCUIT BOARD
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C1 |
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C4 |
C5 |
R8 |
R10 |
R13 |
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8 |
R1 |
R3 |
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C6 |
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TR1 |
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TR2 |
TR3 |
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R4 |
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R7 |
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R9 |
R14 |
1 |
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R11 |
R12 |
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R2 |
C2 |
R5 |
R6 |
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C7 |
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2,3 |
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5,6,7 |
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C3 |
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MGD020 |
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4 |
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Fig.2 Circuit diagram.
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1 |
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8 |
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1 |
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(8x) |
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TOP VIEW |
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L |
75 Ω |
75 Ω |
track |
track |
C |
C |
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MGD061 |
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BOTTOM VIEW |
L > 5 μH; e.g. catalogue No. 3122 108 20150, or 27 turns enamelled 0.3 mm copper wire wound on a ferrite core (material 4B1; catalogue No. 3122 104 91110) with a diameter of 1.6 mm.
C > 220 pF ceramic capacitor.
Fig.3 Printed-circuit board holes and tracks.
1995 Nov 28 |
3 |
Philips Semiconductors |
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Product specification |
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Wideband amplifier module |
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OM2063 |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
MIN. |
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MAX. |
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UNIT |
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VB |
DC supply voltage |
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15 |
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V |
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PIM |
peak incident powers on pins 1 and 8 |
- |
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100 |
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mW |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
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°C |
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Tstg |
storage temperature |
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-40 |
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+125 |
°C |
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CHARACTERISTICS |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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TYP. |
MAX. |
UNIT |
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Measuring conditions |
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Tamb |
ambient operating temperature |
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- |
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25 |
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°C |
VB |
DC supply voltage |
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- |
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12 |
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V |
ZS |
source impedance |
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75 |
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W |
ZL |
load impedance |
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75 |
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W |
Z0 |
characteristic impedance of |
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75 |
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W |
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HF connections |
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f |
frequency range |
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40 |
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860 |
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MHz |
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Performance |
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IB |
supply current |
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52 |
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mA |
GT |
transducer gain = ïS21ï2 |
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29 |
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dB |
DGT |
flatness of frequency response |
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1 |
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1.5 |
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dB |
VSWRin |
individual maximum VSWR |
input; note 1 |
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2.3 |
- |
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VSWRout |
individual maximum VSWR |
output; note 1 |
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1.4 |
- |
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ïS12ï2 |
back attenuation |
f = 100 MHz |
- |
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46 |
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dB |
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f = 860 MHz |
- |
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41 |
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dB |
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Vo(rms) |
output voltage (RMS value) |
dim = -60 dB; |
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3rd order intermodulation (3-tone) |
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VHF |
- |
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103 |
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dBmV |
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UHF |
- |
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105 |
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dBmV |
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F |
noise figure |
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3.6 |
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dB |
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Operating conditions |
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Tamb |
ambient operating temperature |
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-20 |
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+70 |
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°C |
VB |
DC supply voltage |
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10.8 |
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12 |
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13.2 |
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V |
f |
frequency range |
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40 |
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860 |
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MHz |
ZS |
source impedance |
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- |
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75 |
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W |
ZL |
load impedance |
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75 |
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W |
Note
1. Highest value (for sample) occurring in the frequency range.
1995 Nov 28 |
4 |
Philips Semiconductors |
Product specification |
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Wideband amplifier module |
OM2063 |
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MEA199
34
S21 (dB)
32
30
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26
0 |
200 |
400 |
600 |
800 |
1000 |
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f |
(MHz) |
Gain over entire frequency range.
Z0 = 75 Ω.
Fig.4 Transducer gain as a function of frequency.
−41 |
MEA200 |
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S12
(dB)
−43
−45
−47
−49
0 |
200 |
400 |
600 |
800 |
1000 |
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f |
(MHz) |
Gain over entire frequency range.
Z0 = 75 Ω.
Fig.5 |
Back attenuation as a function of frequency. |
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1995 Nov 28 |
5 |