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Philips Semiconductors Product specification

Thyristors

BT168W series

logic level for RCD/ GFI applications

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass

passivated, sensitive gate

SYMBOL

PARAMETER

MAX.

UNIT

thyristors in a plastic envelope

BT168

suitable

for

surface

mounting,

intended for use in Residual Current

VDRM,

Repetitive peak

200

400

500

600

Devices/ Ground

Fault Interrupters

VRRM

off-state voltages

(RCD/ GFI)

applications

where a

IT(AV)

Average on-state

0.6

minimum IGT limit is needed. These

current

devices may be interfaced directly to

IT(RMS)

RMS on-state current

microcontrollers,

logic

integrated

ITSM

Non-repetitive peak

circuits and other low power gate

on-state current

trigger circuits.

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

gate

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL			PARAMETER	CONDITIONS	MIN.		MAX.				UNIT
						B	D		E	G
V	, V	RRM	Repetitive peak off-state		-	2001	4001		5001	6001	V
DRM		RRM	voltages
			voltages

IT(AV)			Average on-state current	half sine wave;	-		0.63				A
IT(RMS)				Tsp ≤ 112 ˚C
IT(RMS)			RMS on-state current	all conduction angles	-			1			A
ITSM			Non-repetitive peak	t = 10 ms	-			8			A
			on-state current	t = 8.3 ms	-			9			A
				half sine wave;
				Tj = 125 ˚C prior to
				surge; with reapplied
I2t			I2t for fusing	VDRM(max)	-		0.32				A2s
I2t			I2t for fusing	t = 10 ms	-		0.32				A2s
dIT/dt			Repetitive rate of rise of	ITM = 2 A; IG = 10 mA;	-			50			A/μs
			on-state current after	dIG/dt = 100 mA/μs
			triggering
IGM			Peak gate current		-			1			A
VGM			Peak gate voltage		-			5			V
VRGM			Peak reverse gate voltage		-			5			V
PGM			Peak gate power		-			2			W
PG(AV)			Average gate power	over any 20 ms period	-			0.1			W
Tstg			Storage temperature		-40		150				˚C
Tj			Operating junction		-		125				˚C
			temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

February 1996

Rev 1.000

Philips Semiconductors Product specification

Thyristors				BT168W series
logic level for RCD/ GFI Applications

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

Rth j-sp	Thermal resistance		-	-	15	K/W
	junction to solder point
Rth j-a	Thermal resistance	pcb mounted, minimum footprint	-	156	-	K/W
	junction to ambient	pcb mounted, pad area as in fig:14	-	70	-	K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

IGT	Gate trigger current	VD = 12 V; IT = 10 mA; gate open circuit	20	50	200	μA
IL	Latching current	VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ	-	2	6	mA
IH	Holding current	VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ	-	2	5	mA
VT	On-state voltage	IT = 2 A	-	1.35	1.5	V
VGT	Gate trigger voltage	VD = 12 V; IT = 10 mA; gate open circuit	-	0.5	0.8	V
		VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C;	0.2	0.3	-	V
		gate open circuit
ID, IR	Off-state leakage current	VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;	-	0.05	0.1	mA
		RGK = 1 kΩ
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

dVD/dt	Critical rate of rise of	VDM = 67% VDRM(max); Tj = 125 ˚C;	-	25	-	V/μs
	off-state voltage	exponential waveform; RGK = 1 kΩ				μs
tgt	Gate controlled turn-on	ITM = 2 A; VD = VDRM(max); IG = 10 mA;	-	2	-	μs
	time	dIG/dt = 0.1 A/μs				μs
tq	Circuit commutated	VD = 67% VDRM(max); Tj = 125 ˚C;	-	100	-	μs
	turn-off time	ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/μs;
		dVD/dt = 2 V/μs; RGK = 1 kΩ

February 1996

Rev 1.000

Philips Semiconductors	Product specification

Thyristors	BT168W series
logic level for RCD/ GFI Applications

1	Ptot / W			BT169W			Tsp(max) / C110
		conduction	form				a = 1.57
		angle	factor				a = 1.57
		degrees	a			1.9
0.8		30	4			1.9		113
0.8		60	2.8			2.2		113
		60	2.8			2.2
		90	2.2		2.8
		120	1.9		2.8
0.6		180	1.57	4				116
0.6								116

0.4								119
0.2								122
0	0	0.1	0.2	0.3	0.4	0.5	0.6	125
	0	0.1	0.2	0.3	0.4	0.5	0.6	0.7
				IF(AV) / A
Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where a = form
			factor = IT(RMS)/ IT(AV).

1000	ITSM / A		BT169
100
10	IT	ITSM
	T	time
	Tj initial = 125 C max
1		100us	1ms	10ms
10us		100us	1ms	10ms
			T / s

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms.

1.2	IT(RMS) / A		BT134W
1					112 C
1
0.8
0.6
0.4
0.2
0		0	50	100	150
-50		0	50	100	150
			Tsp / C

Fig.3. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp.

10	ITSM / A		BT169
			IT	ITSM
8			T	time
			T	time
			Tj initial = 125 C max
6
4
2
0	1	10	100	1000
		Number of half cycles at 50Hz

Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

IT(RMS) / A		BT134W
2
1.5
1
0.5
0	0.1	1	10
0.01	0.1	1	10

surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tsp ≤ 112˚C.

	VGT(Tj)		BT151
1.6	VGT(25 C)		BT151
1.4
1.2
1
0.8
0.6
0.4		0	50	100	150
-50		0	50	100	150
			Tj / C

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996

Rev 1.000

Philips Semiconductors	Product specification

Thyristors	BT168W series
logic level for RCD/ GFI Applications

	IGT(Tj)		BT169
3	IGT(25 C)		BT169
2.5
2
1.5
1
0.5
0		0	50	100	150
-50		0	50	100	150
			Tj / C

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

	IL(Tj)
3	IL(25 C)		BT169
3
2.5
2
1.5
1
0.5
0		0	50	100	150
-50		0	50	100	150
			Tj / C
Fig.8.		Normalised latching current IL(Tj)/ IL(25˚C),
	versus junction temperature Tj, RGK = 1 kΩ.
	IH(Tj)
3	IH(25 C)		BT169
2.5
2
1.5
1
0.5
0		0	50	100	150
-50		0	50	100	150
			Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj, RGK = 1 kΩ.

IT / A

BT169W

Tj = 125 C

Tj = 25 C

4Vo = 1.0 V

Rs = 0.27 Ohms

3
2		typ		max
2
1
0 0	0.5	1	1.5	2	2.5
		VT / V

Fig.10. Typical and maximum on-state characteristic.

100 Zth j-sp (K/W)			BT169W
10
1
			P	t p
			D
0.1
						t
0.01	0.1ms	1ms	10ms	0.1s	1s	10s
10us	0.1ms	1ms	10ms	0.1s	1s	10s
			tp / s

Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp.

1000	dVD/dt (V/us)
100			RGK = 1 kohms
			RGK = 1 kohms
10
1	0	50	100	150
			Tj / C

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

February 1996

Rev 1.000

Philips Semiconductors Product specification

Thyristors	BT168W series
logic level for RCD/ GFI Applications

MOUNTING INSTRUCTIONS	PRINTED CIRCUIT BOARD

	Dimensions in mm.	Dimensions in mm.
3.8		36
3.8
min
1.5		18
min		18
min
	60
	4.6	4.5
	9
2.3	6.3
1.5
min	10
	10
(3x)
1.5
min
4.6		7
		15
	50

Fig.13. soldering pattern for surface mounting	Fig.14. PCB for thermal resistance and power rating
SOT223.	for SOT223.
	PCB: FR4 epoxy glass (1.6 mm thick), copper
	laminate (35 μm thick).

February 1996

Rev 1.000

Источник: https://studfile.net/preview/16504424/

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