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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by BUH100/D

BUH100

Designer's Data Sheet

SWITCHMODE NPN Silicon

Planar Power Transistor

POWER TRANSISTOR

10 AMPERES

700 VOLTS

100 WATTS

The BUH100 has an application specific state±of±art die designed for use in 100 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current during either the start±up conditions or under a short circuit across the load.

This High voltage/High speed product exhibits the following main features:

•Improved Efficiency Due to the Low Base Drive Requirements:

ÐHigh and Flat DC Current Gain h FE

ÐFast Switching

•Robustness Thanks to the Technology Developed to Manufacture this Device

•Motorola ª6 SIGMAº Philosophy Provides Tight and Reproducible Parametric Distributions

MAXIMUM RATINGS

CASE 221A±06

TO±220AB

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Sustaining Voltage

VCEO

400

Vdc

Collector±Base Breakdown Voltage

VCBO

700

Vdc

Collector±Emitter Breakdown Voltage

VCES

700

Vdc

Emitter±Base Voltage

VEBO

10

Vdc

Collector Current Ð Continuous

IC

10

Adc

Ð Peak (1)

ICM

20

 

Base Current Ð Continuous

IB

4

Adc

Base Current Ð Peak (1)

IBM

10

 

*Total Device Dissipation @ TC = 25_C

PD

100

Watt

*Derate above 25°C

 

0.8

W/_C

 

 

 

 

Operating and Storage Temperature

TJ, Tstg

± 65 to 150

_C

THERMAL CHARACTERISTICS

Thermal Resistance

 

 

_C/W

Ð Junction to Case

RqJC

1.25

 

Ð Junction to Ambient

RqJA

62.5

 

Maximum Lead Temperature for Soldering Purposes:

TL

260

_C

1/8″ from case for 5 seconds

 

 

 

 

 

 

 

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

 

 

 

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Motorola, Inc. 1995

BUH100

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

Characteristic

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Sustaining Voltage

 

VCEO(sus)

400

460

 

Vdc

(IC = 100 mA, L = 25 mH)

 

 

 

 

 

 

Collector±Base Breakdown Voltage

 

VCBO

700

860

 

Vdc

(ICBO = 1 mA)

 

 

 

 

 

 

 

Emitter±Base Breakdown Voltage

 

VEBO

10

12.5

 

Vdc

(IEBO = 1 mA)

 

 

 

 

 

 

 

Collector Cutoff Current

 

 

ICEO

 

 

100

μAdc

(VCE = Rated VCEO, IB = 0)

 

 

 

 

 

 

Collector Cutoff Current

 

@ TC = 25°C

ICES

 

 

100

μAdc

(VCE = Rated VCES, VEB = 0)

@ TC = 125°C

 

 

 

1000

 

Collector Base Current

 

@ TC = 25°C

ICBO

 

 

100

μAdc

(VCB = Rated VCBO, VEB = 0)

@ TC = 125°C

 

 

 

1000

 

Emitter±Cutoff Current

 

 

IEBO

 

 

100

μAdc

(VEB = 9 Vdc, IC = 0)

 

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base±Emitter Saturation Voltage

@ TC = 25°C

VBE(sat)

 

1

1.1

Vdc

(IC = 5 Adc, IB = 1 Adc)

 

 

 

 

 

 

 

Collector±Emitter Saturation Voltage

@ TC = 25°C

VCE(sat)

 

0.37

0.6

Vdc

(IC = 5 Adc, IB = 1 Adc)

 

@ TC = 125°C

 

 

0.37

0.6

 

(IC = 7 Adc, IB = 1.5 Adc)

@ TC = 25°C

 

 

0.5

0.75

Vdc

 

 

 

@ TC = 125°C

 

 

0.6

1.5

 

DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)

@ TC = 25°C

hFE

15

24

 

Ð

 

 

 

@ TC = 125°C

 

16

28

 

 

DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)

@ TC = 25°C

 

10

15

 

Ð

 

 

 

@ TC = 125°C

 

10

14.5

 

 

DC Current Gain (IC = 7 Adc, VCE = 5 Vdc)

@ TC = 25°C

 

8

12

 

Ð

 

 

 

@ TC = 125°C

 

7

10.5

 

 

DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)

@ TC = 25°C

 

6

9.5

 

Ð

 

 

 

@ TC = 125°C

 

4

8

 

 

DYNAMIC SATURATION VOLTAGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Dynamic Saturation

 

IC = 5 Adc, IB1 = 1 Adc

@ TC = 25°C

VCE(dsat)

 

1.1

 

V

Voltage:

 

VCC = 300 V

 

 

 

 

 

 

 

@ TC = 125°C

 

 

2.1

 

V

μ

 

 

 

 

Determined 3 s after

 

 

 

 

 

 

 

 

rising IB1 reaches

 

IC = 7.5 Adc, IB1 = 1.5 Adc

@ TC = 25°C

 

 

1.7

 

V

90% of final IB1

 

 

 

 

 

 

 

 

VCC = 300 V

°

 

 

5

 

V

(See Figure 19)

 

 

 

 

 

 

@ TC = 125 C

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current Gain Bandwidth

 

 

fT

 

23

 

MHz

(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)

 

 

 

 

 

 

Output Capacitance

 

 

Cob

 

100

150

pF

(VCB = 10 Vdc, IE = 0, f = 1 MHz)

 

 

 

 

 

 

Input Capacitance

 

 

Cib

 

1300

1750

pF

(VEB = 8 Vdc, f = 1 MHz)

 

 

 

 

 

 

 

2

Motorola Bipolar Power Transistor Device Data

 

 

 

 

 

 

 

 

 

 

 

BUH100

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

 

 

Symbol

 

Min

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 μs)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn±on Time

I = 1 Adc, I

= 0.2 Adc

@ TC = 25°C

ton

 

 

130

200

 

ns

 

°

 

 

 

140

 

 

 

 

C

B1

 

 

@ TC = 125 C

 

 

 

 

 

 

 

IB2 = 0.2 Adc

 

 

 

 

 

 

 

 

Turn±off Time

@ TC = 25°C

toff

 

 

6.8

8

 

μs

VCC

= 300 Vdc

 

 

 

 

 

 

 

 

@ TC = 125°C

 

 

 

8.5

 

 

 

Turn±on Time

I = 1 Adc, I

= 0.2 Adc

@ TC = 25°C

ton

 

 

140

200

 

ns

 

°

 

 

 

150

 

 

 

 

C

B1

 

 

@ TC = 125 C

 

 

 

 

 

 

 

IB2 = 0.4 Adc

 

 

 

 

 

 

 

 

Turn±off Time

@ TC = 25°C

toff

 

 

3.4

4

 

μs

VCC

= 300 Vdc

 

 

 

 

 

 

 

 

@ TC = 125°C

 

 

 

4.3

 

 

 

Turn±on Time

I = 5 Adc, I

 

= 1 Adc

@ TC = 25°C

ton

 

 

250

500

 

ns

 

 

°

 

 

 

800

 

 

 

 

C

B1

 

@ TC = 125 C

 

 

 

 

 

 

 

IB2 = 1 Adc

 

 

 

 

 

 

 

 

Turn±off Time

@ TC = 25°C

toff

 

 

2.9

3.5

 

μs

VCC

= 300 Vdc

 

 

 

 

 

 

 

 

@ TC = 125°C

 

 

 

3.6

 

 

 

Turn±on Time

I = 7.5 Adc, I

 

= 1.5 Adc

@ TC = 25°C

ton

 

 

500

700

 

ns

 

 

°

 

 

 

900

 

 

 

 

C

B1

 

@ TC = 125 C

 

 

 

 

 

 

 

IB2 = 1.5 Adc

 

 

 

 

 

 

 

 

Turn±off Time

@ TC = 25°C

toff

 

 

2.1

2.5

 

μs

V

= 300 Vdc

 

 

 

 

CC

 

 

 

@ TC = 125°C

 

 

 

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH)

 

 

 

 

 

Fall Time

 

 

 

 

@ TC = 25°C

tfi

 

 

150

250

 

ns

 

IC

= 1 Adc

@ TC = 125°C

 

 

 

180

 

 

 

Storage Time

@ TC = 25°C

tsi

 

 

5.1

6

 

μs

IB1

= 0.2 Adc

 

 

 

 

@ TC = 125°C

 

 

 

5.8

 

 

 

 

IB2 = 0.2 Adc

 

 

 

 

 

 

Crossover Time

 

 

 

 

@ TC = 25°C

tc

 

 

230

325

 

ns

 

 

 

 

 

@ TC = 125°C

 

 

 

300

 

 

 

Fall Time

 

 

 

 

@ TC = 25°C

tfi

 

 

150

250

 

ns

 

IC

= 1 Adc

@ TC = 125°C

 

 

 

170

 

 

 

Storage Time

@ TC = 25°C

tsi

 

 

2.5

3

 

μs

IB1

= 0.2 Adc

 

 

 

 

@ TC = 125°C

 

 

 

2.8

 

 

 

 

IB2 = 0.5 Adc

 

 

 

 

 

 

Crossover Time

 

 

 

 

@ TC = 25°C

tc

 

 

260

350

 

ns

 

 

 

 

 

 

 

 

 

 

 

 

@ TC = 125°C

 

 

 

300

 

 

 

Fall Time

 

 

 

 

@ TC = 25°C

tfi

 

 

100

150

 

ns

 

IC

= 5 Adc

@ TC = 125°C

 

 

 

140

 

 

 

Storage Time

@ TC = 25°C

tsi

 

 

2.9

3.5

 

μs

IB1 = 1 Adc

 

 

 

 

@ TC = 125°C

 

 

 

4.6

 

 

 

 

IB2 = 1 Adc

 

 

 

 

 

 

Crossover Time

 

 

 

 

@ TC = 25°C

tc

 

 

220

300

 

ns

 

 

 

 

 

@ TC = 125°C

 

 

 

450

 

 

 

Fall Time

 

 

 

 

@ TC = 25°C

tfi

 

 

100

150

 

ns

 

IC = 7.5 Adc

@ TC = 125°C

 

 

 

150

 

 

 

Storage Time

@ TC = 25°C

tsi

 

 

2

2.5

 

μs

IB1

= 1.5 Adc

 

 

 

 

@ TC = 125°C

 

 

 

2.5

 

 

 

 

IB2 = 1.5 Adc

 

 

 

 

 

 

Crossover Time

 

 

 

 

@ TC = 25°C

tc

 

 

250

350

 

ns

 

 

 

 

 

@ TC = 125°C

 

 

 

475

 

 

 

Motorola Bipolar Power Transistor Device Data

3

BUH100

TYPICAL STATIC CHARACTERISTICS

 

100

 

 

 

 

 

 

 

 

 

VCE = 1 V

GAIN

 

TJ = 125°C

 

 

 

 

 

 

 

 

, DC CURRENT

10

TJ = ± 20°C

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

h

 

 

 

 

 

 

1

 

 

 

 

 

0.001

0.01

0.1

1

10

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 1. DC Current Gain @ 1 Volt

 

100

 

 

 

 

 

 

 

 

 

VCE = 5 V

GAIN

 

 

TJ = 125°C

 

 

 

 

 

 

 

, DC CURRENT

10

 

TJ = ± 20°C

TJ = 25°C

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

h

 

 

 

 

 

 

1

 

 

 

 

 

0.01

0.1

1

10

100

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 3. DC Current Gain @ 5 Volt

 

10

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

(VOLTS)

1

 

 

 

 

 

 

 

 

 

 

 

,VOLTAGE

 

T

J

= 25°C

°

 

 

 

 

TJ = ± 20 C

 

0.1

 

 

 

TJ = 125°C

 

CE

 

 

 

 

V

 

 

 

 

 

 

 

0.01

0.01

 

 

 

 

 

0.001

0.1

1

10

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 5. Collector±Emitter Saturation Voltage

 

100

 

 

 

 

 

 

 

 

 

VCE = 3 V

GAIN

 

TJ = 125°C

 

 

 

 

 

 

 

 

, DC CURRENT

10

TJ = ± 20°C

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

h

 

 

 

 

 

 

1

 

 

 

 

 

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 2. DC Current Gain @ 3 Volt

 

10

 

 

 

 

 

 

IC/IB = 5

 

 

 

(VOLTS)

1

 

 

 

 

 

 

 

 

 

,VOLTAGE

 

 

TJ = 25°C

TJ = ± 20°C

 

0.1

 

 

 

 

CE

 

 

TJ = 125°C

 

 

 

 

 

V

 

 

 

 

 

0.01

0.01

 

 

 

 

0.001

0.1

1

10

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 4. Collector±Emitter Saturation Voltage

 

1.5

 

 

 

 

 

 

 

 

IC/IB = 5

 

 

 

 

(VOLTS)

1

 

 

 

 

 

 

 

TJ = ± 20°C

 

 

 

VOLTAGE

 

 

 

 

0.5

T

J

= 25°C

 

 

 

,

 

 

 

 

 

BE

 

 

 

 

 

 

 

TJ = 125°C

 

 

 

V

 

 

 

 

 

 

 

 

 

 

0

 

 

 

0.1

 

 

 

0.001

0.01

1

10

 

 

IC, COLLECTOR CURRENT (AMPS)

 

Figure 6. Base±Emitter Saturation Region

4

Motorola Bipolar Power Transistor Device Data

BUH100

TYPICAL STATIC CHARACTERISTICS

 

1.5

 

 

 

 

 

 

IC/IB = 10

 

 

 

(VOLTS)

1

 

 

 

 

 

 

TJ = ± 20°C

 

 

VOLTAGE

 

 

 

 

0.5

 

TJ = 25°C

 

 

,

 

 

 

 

BE

 

TJ = 125°C

 

 

 

 

 

 

V

 

 

 

 

 

0

0.01

 

 

 

 

0.001

0.1

1

10

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Base±Emitter Saturation Region

 

10000

 

 

 

 

TJ = 25°C

 

 

 

f(test) = 1 MHz

 

(pF)

 

Cib

 

1000

 

 

CAPACITANCE

100

Cob

 

C,

 

 

 

 

10

 

 

 

1

10

100

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

Figure 9. Capacitance

 

2

 

 

 

 

TJ = 25°C

 

 

15 A

(VOLTS)

1.5

 

 

10 A

 

 

 

 

 

8 A

 

 

 

 

 

VOLTAGE,

1

 

5 A

 

 

 

 

 

 

 

 

 

 

 

3 A

 

CE

 

2 A

 

 

V

0.5

 

 

 

 

 

 

 

 

VCE(sat)

 

 

 

 

(IC = 1 A)

 

 

 

 

0

 

 

 

 

0.01

0.1

1

10

IB, BASE CURRENT (A)

Figure 8. Collector Saturation Region

 

900

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

800

BVCER @ 10 mA

 

 

(VOLTS)

700

 

 

 

 

 

 

 

 

 

BVCER

600

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

BVCER(sus) @ 500 mA, 25 mH

 

 

 

400

 

1000

10000

 

 

10

100

100000

 

 

 

RBE (Ω)

 

 

Figure 10. Resistive Breakdown

Motorola Bipolar Power Transistor Device Data

5
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