Материал: BUH100RE

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BUH100

TYPICAL SWITCHING CHARACTERISTICS

 

2500

 

 

 

 

 

 

 

 

IB1 = IB2

 

 

 

 

 

2000

VCC = 300 V

 

 

 

 

 

PW = 40

μs

 

 

 

 

 

 

 

 

 

 

 

1500

 

°

 

 

IC/IB = 10

 

(ns)

 

TJ = 125 C

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

t, TIME

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

 

 

125°C

 

 

500

 

 

 

 

 

 

 

 

 

 

 

25°C

IC/IB = 5

 

 

0

0

2

4

6

8

10

 

 

IC, COLLECTOR CURRENT (AMPS)

 

10

 

 

 

 

 

 

 

 

TJ = 125°C

 

IB1 = IB2

 

 

8

 

TJ = 25°C

 

VCC = 300 V

 

 

 

 

 

 

PW = 20 μs

 

( μs)

6

 

IC/IB

= 5

 

 

 

 

t, TIME

4

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

0

 

 

 

 

 

 

0

2

4

6

8

10

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Resistive Switching Time, ton

Figure 12. Resistive Switch Time, toff

 

7

 

 

 

6

 

 

IC/IB = 5

IB1 = IB2

 

5

 

 

VCC = 15 V

 

 

 

 

VZ = 300 V

 

 

μs)

5

 

LC = 200 μH

μs)

4

(

 

 

 

(

 

t, TIME

 

 

 

t, TIME

3

 

 

 

 

 

3

 

 

 

2

 

 

TJ = 125°C

 

 

1

 

 

TJ = 25°C

 

 

 

 

1

 

 

 

0

 

1

4

7

10

 

 

 

IC/IB = 10

IB1 = IB2

 

 

VCC = 15 V

 

 

 

VZ = 300 V

 

 

 

LC = 200 μH

 

TJ = 125°C

 

 

 

TJ = 25°C

 

 

1

4

7

10

IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, tsi

Figure 13 Bis. Inductive Storage Time, tsi

600

 

 

 

IB1 = IB2

 

TJ = 125°C

 

VCC = 15 V

 

TJ = 25°C

 

VZ = 300 V

 

 

 

LC = 200 μH

 

 

tc

400

 

 

t, TIME (ns)

 

 

tfi

200

 

 

 

0

 

 

 

1

4

7

10

IC, COLLECTOR CURRENT (AMPS)

Figure 14. Inductive Storage Time,

tc & tfi @ IC/IB = 5

 

800

 

 

 

 

 

 

 

TJ = 125°C

I

= I

B2

 

 

TJ = 25°C

B1

 

 

 

 

V

 

= 15 V

 

 

 

CC

 

 

 

600

 

VZ = 300 V

 

 

 

LC = 200 μH

(ns)

 

 

tc

 

 

 

 

 

 

 

 

 

t, TIME

400

 

 

 

 

 

 

 

tfi

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

0

4

 

 

 

 

 

1

7

 

 

10

IC, COLLECTOR CURRENT (AMPS)

Figure 15. Inductive Storage Time,

tc & tfi @ IC/IB = 10

6

Motorola Bipolar Power Transistor Device Data

BUH100

TYPICAL SWITCHING CHARACTERISTICS

 

4

 

 

 

 

 

 

 

200

s)

3

 

 

 

IC = 5 A

 

 

150

TIME (μ

2

 

 

 

 

 

 

 

TIME(ns)

STORAGE

 

 

 

 

 

 

 

100

I

 

= 7.5 A

 

 

 

 

 

, FALL

C

 

 

 

 

 

fi

,

 

 

 

I

= I

 

 

t

si

1

 

 

 

 

 

t

 

 

 

B1

B2

 

 

50

 

 

 

TJ = 125°C

 

VCC = 15 V

 

 

 

 

 

VZ

= 300 V

 

 

 

 

 

TJ = 25°C

 

LC = 200

μ

H

 

 

0

 

 

 

 

0

 

2

 

4

6

8

 

 

 

10

hFE, FORCED GAIN

 

 

 

IC = 7.5 A

 

 

 

 

 

IBoff = IB2

 

 

IC = 5 A

 

 

 

 

VCC = 15 V

 

 

 

 

 

125°C

 

VZ = 300 V

 

 

 

 

TJ =

 

LC = 200 μH

 

 

 

 

TJ =

25°C

3

4

5

6

7

8

9

10

 

 

 

hFE, FORCED GAIN

 

 

 

Figure 16. Inductive Storage Time

Figure 17. Inductive Fall Time

 

800

 

 

 

 

 

 

 

 

700

IB1 = IB2

 

 

 

 

 

 

 

VCC = 15 V

 

 

 

 

 

 

(ns)

 

VZ = 300 V

 

 

 

 

 

 

600

LC = 200 μH

 

 

 

 

 

 

TIME

 

 

 

 

 

 

500

 

 

 

 

 

IC = 7.5 A

 

, CROSSOVER

 

 

 

 

 

 

 

400

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

c

 

 

 

 

 

 

 

 

t

 

 

 

 

 

 

 

 

 

200

 

 

 

°

 

IC = 5 A

 

 

 

 

 

TJ = 125 C

 

 

 

 

100

 

 

TJ = 25°C

 

 

 

 

3

4

5

6

7

8

9

10

hFE, FORCED GAIN

Figure 18. Inductive Crossover Time, tc

Motorola Bipolar Power Transistor Device Data

7

BUH100

TYPICAL SWITCHING CHARACTERISTICS

 

VCE

 

 

dyn 1 μs

 

 

dyn 3 μs

0 V

 

 

 

90% IB

 

 

1 μs

 

IB

3

μs

 

 

 

TIME

Figure 19. Dynamic Saturation Voltage

Measurements

10

 

 

 

 

 

 

 

 

9

IC

 

 

 

 

90% IC

 

 

8

 

 

tsi

 

 

tfi

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

5

Vclamp

 

10% Vclamp

 

 

 

10% IC

 

 

 

 

tc

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

IB

90% IB1

 

 

 

 

 

2

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

0

1

2

3

4

5

6

7

8

 

 

 

 

TIME

 

 

 

 

Figure 20. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V

 

 

 

 

 

1 μF

150 Ω

100 Ω

MTP8P10

100 μF

 

 

 

 

3 W

3 W

 

 

 

 

 

 

 

 

MPF930

 

 

MTP8P10

RB1

VCE

 

 

MUR105

IB1

 

MPF930

 

 

+10 V

 

 

Iout

I

 

 

 

 

 

B

 

 

 

 

A

 

50 Ω

 

 

MJE210

RB2

 

 

 

 

 

 

 

 

 

 

COMMON

 

150 Ω

MTP12N10

 

 

 

 

 

V(BR)CEO(sus)

 

500 μF

3 W

 

 

 

 

 

 

L = 10 mH

 

 

 

 

 

 

 

 

 

1 μF

RB2 = ∞

 

 

 

 

VCC = 20 Volts

 

 

 

 

 

±Voff

 

 

 

 

IC(pk) = 100 mA

IC PEAK

VCE PEAK

IB2

 

Inductive Switching

RBSOA

L = 200 μH

L = 500 μH

RB2 = 0

RB2 = 0

VCC = 15 Volts

VCC = 15 Volts

RB1 selected for

RB1 selected for

desired IB1

desired IB1

TYPICAL THERMAL RESPONSE

 

1

 

 

 

 

 

 

 

 

 

 

 

 

SECOND BREAKDOWN

 

 

FACTOR

0.8

 

 

 

DERATING

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

DERATING

 

 

 

 

 

 

 

 

THERMAL DERATING

 

 

 

 

0.4

 

 

 

 

 

 

 

POWER

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

40

60

80

 

120

140

 

 

20

100

160

 

 

 

TC, CASE TEMPERATURE (°C)

 

 

Figure 21. Forward Bias Power Derating

8

Motorola Bipolar Power Transistor Device Data

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ±VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 22 is based

on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to

10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21.

BUH100

TJ(pk) may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.

 

100

 

 

 

 

(AMPS)

10

1 ms

10

μ

1 μs

 

s

 

CURRENT

 

5 ms

EXTENDED

 

 

 

 

1

DC

 

SOA

 

, COLLECTOR

 

 

 

0.1

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

I

 

 

 

 

 

 

0.01

 

 

 

 

 

10

100

 

 

1000

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 22. Forward Bias Safe Operating Area

 

12

 

 

 

 

 

 

 

(AMPS)

10

 

 

GAIN ≥

5

 

TC ≤ 125°C

 

 

 

 

 

 

LC = 2 mH

 

CURRENT

8

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

COLLECTOR

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

± 5 V

 

,

2

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

0 V

 

±1.5 V

 

 

 

0

300

400

 

 

600

700

 

 

200

500

 

800

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 23. Reverse Bias Safe Operating Area

TYPICAL THERMAL RESPONSE

 

 

1

 

 

 

 

 

TRANSIENT THERMAL RESISTANCE

 

 

0.5

 

 

 

 

 

 

0.2

 

 

 

 

(NORMALIZED)

0.1

0.1

 

P(pk)

RθJC(t) = r(t) RθJC

 

 

 

 

 

0.05

 

 

RθJC = 1.25°C/W MAX

 

 

 

 

 

D CURVES APPLY FOR POWER

 

 

 

 

t1

PULSE TRAIN SHOWN

 

 

0.02

 

READ TIME AT t1

 

 

 

t

 

 

 

 

2

TJ(pk) ± TC = P(pk) RθJC(t)

 

 

SINGLE PULSE

 

DUTY CYCLE, D = t1/t2

 

r(t),

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

0.01

0.1

1

10

100

1000

t, TIME (ms)

Figure 24. Typical Thermal Response (ZθJC(t)) for BUH100

Motorola Bipolar Power Transistor Device Data

9

BUH100

PACKAGE DIMENSIONS

 

 

 

 

±T±

 

B

 

F

C

 

 

 

T

S

4

 

 

 

 

Q

 

 

A

 

1

2

3

U

 

H

 

 

 

 

Z

 

 

K

 

 

 

 

 

L

 

 

 

R

V

 

 

 

J

G

 

 

 

 

 

 

 

D

 

 

N

 

 

 

SEATING PLANE

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.570

0.620

14.48

15.75

B

0.380

0.405

9.66

10.28

C

0.160

0.190

4.07

4.82

D

0.025

0.035

0.64

0.88

F

0.142

0.147

3.61

3.73

G

0.095

0.105

2.42

2.66

H

0.110

0.155

2.80

3.93

J

0.018

0.025

0.46

0.64

K

0.500

0.562

12.70

14.27

L

0.045

0.060

1.15

1.52

N

0.190

0.210

4.83

5.33

Q

0.100

0.120

2.54

3.04

R

0.080

0.110

2.04

2.79

S

0.045

0.055

1.15

1.39

T

0.235

0.255

5.97

6.47

U

0.000

0.050

0.00

1.27

V

0.045

±±±

1.15

±±±

Z

±±±

0.080

±±±

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 221A±06

TO±220AB

ISSUE Y

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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