Материал: BUL147RE
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BUL147/D
Designer's Data Sheet
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The BUL147/BUL147F have an applications specific state±of±the±art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment. These high±voltage/high±speed transistors offer the following:
•Improved Efficiency Due to Low Base Drive Requirements:
ÐHigh and Flat DC Current Gain
ÐFast Switching
ÐNo Coil Required in Base Circuit for Turn±Off (No Current Tail)
•Parametric Distributions are Tight and Consistent Lot±to±Lot
•Two Package Choices: Standard TO±220 or Isolated TO±220
•BUL147F, Isolated Case 221D, is UL Recognized to 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating |
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Symbol |
BUL147 |
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BUL147F |
Unit |
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Collector±Emitter Sustaining Voltage |
VCEO |
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400 |
Vdc |
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Collector±Emitter Breakdown Voltage |
VCES |
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700 |
Vdc |
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Emitter±Base Voltage |
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VEBO |
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9.0 |
Vdc |
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Collector Current Ð Continuous |
IC |
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8.0 |
Adc |
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Ð Peak(1) |
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ICM |
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16 |
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Base Current Ð Continuous |
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IB |
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4.0 |
Adc |
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Ð Peak(1) |
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IBM |
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8.0 |
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RMS Isolated Voltage(2) |
Test No. 1 Per Fig. 22a |
VISOL |
Ð |
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4500 |
Volts |
(for 1 sec, R.H. < 30%, |
Test No. 2 Per Fig. 22b |
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Ð |
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3500 |
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TC = 25°C) |
Test No. 3 Per Fig. 22c |
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Ð |
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1500 |
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Total Device Dissipation |
(TC = 25°C) |
PD |
125 |
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45 |
Watts |
Derate above 25°C |
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1.0 |
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0.36 |
W/°C |
Operating and Storage Temperature |
TJ, Tstg |
± 65 to 150 |
°C |
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THERMAL CHARACTERISTICS |
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Rating |
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Symbol |
BUL44 |
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BUL44F |
Unit |
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Thermal Resistance Ð Junction to Case |
RqJC |
1.0 |
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2.78 |
°C/W |
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Ð Junction to Ambient |
RqJA |
62.5 |
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62.5 |
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Maximum Lead Temperature for Soldering |
TL |
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260 |
°C |
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Purposes: 1/8″ from Case for 5 Seconds |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
BUL147* BUL147F*
*Motorola Preferred Device
POWER TRANSISTOR
8.0 AMPERES
700 VOLTS
45 and 125 WATTS
BUL147
CASE 221A±06
TO±220AB
BUL147F
CASE 221D±02
ISOLATED TO±220 TYPE
UL RECOGNIZED
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) |
VCEO(sus) |
400 |
Ð |
Ð |
Vdc |
Collector Cutoff Current (VCE = Rated VCEO, IB = 0) |
ICEO |
Ð |
Ð |
100 |
mAdc |
Collector Cutoff Current (VCE = Rated VCES, VEB = 0) |
ICES |
Ð |
Ð |
100 |
mAdc |
(TC = 125°C) |
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Ð |
Ð |
500 |
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Collector Cutoff Current (VCE = 500 V, VEB = 0) (TC = 125°C) |
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Ð |
Ð |
100 |
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Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) |
IEBO |
Ð |
Ð |
100 |
mAdc |
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. |
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(continued) |
(2) Proper strike and creepage distance must be provided.
Designer's and SWITCHMODE are trademarks of Motorola, Inc.
Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
BUL147 BUL147F
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)
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Characteristic |
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Typ |
Max |
Unit |
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ON CHARACTERISTICS |
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Base±Emitter Saturation Voltage |
(IC = 2.0 Adc, IB = 0.2 Adc) |
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VBE(sat) |
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Ð |
0.82 |
1.1 |
Vdc |
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Base±Emitter Saturation Voltage |
(IC = 4.5 Adc, IB = 0.9 Adc) |
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Ð |
0.92 |
1.25 |
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Collector±Emitter Saturation Voltage |
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VCE(sat) |
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Vdc |
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(IC = 2.0 Adc, IB = 0.2 Adc) |
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(TC = 125°C) |
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Ð |
0.25 |
0.5 |
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(IC = 4.5 Adc, IB = 0.9 Adc) |
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Ð |
0.3 |
0.5 |
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(TC = 125°C) |
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Ð |
0.35 |
0.7 |
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Ð |
0.35 |
0.8 |
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DC Current Gain |
(IC = 1.0 Adc, VCE = 5.0 Vdc) |
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(TC = 125°C) |
hFE |
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14 |
Ð |
34 |
Ð |
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Ð |
30 |
Ð |
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DC Current Gain |
(IC = 4.5 Adc, VCE = 1.0 Vdc) |
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(TC = 125°C) |
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8.0 |
12 |
Ð |
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7.0 |
11 |
Ð |
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DC Current Gain |
(IC = 2.0 Adc, VCE = 1.0 Vdc) |
(TC = 25°C to 125°C) |
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10 |
18 |
Ð |
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DC Current Gain |
(IC = 10 mAdc, VCE = 5.0 Vdc) |
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10 |
20 |
Ð |
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DYNAMIC CHARACTERISTICS |
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Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) |
fT |
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Ð |
14 |
Ð |
MHz |
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Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
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Cob |
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Ð |
100 |
175 |
pF |
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Input Capacitance (VEB = 8.0 V) |
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Cib |
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Ð |
1750 |
2500 |
pF |
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(IC = 2.0 Adc |
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1.0 μs |
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Ð |
3.0 |
Ð |
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(T |
= 125°C) |
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Ð |
5.5 |
Ð |
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Dynamic Saturation Voltage: |
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IB1 = 200 mAdc |
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C |
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Ð |
0.8 |
Ð |
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Determined 1.0 μs and |
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VCC = 300 V) |
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3.0 μs |
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(TC = 125°C) |
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Ð |
1.4 |
Ð |
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3.0 μs respectively after |
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VCE(dsat) |
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Volts |
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rising IB1 reaches 90% of |
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(IC = 5.0 Adc |
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1.0 μs |
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Ð |
3.3 |
Ð |
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final IB1 |
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(T |
= 125°C) |
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Ð |
8.5 |
Ð |
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(see Figure 18) |
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IB1 = 0.9 Adc |
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C |
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Ð |
0.4 |
Ð |
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VCC = 300 V) |
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3.0 μs |
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(TC = 125°C) |
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Ð |
1.0 |
Ð |
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SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μs) |
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Turn±On Time |
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(IC = 2.0 Adc, IB1 = 0.2 Adc |
(TC = 125°C) |
ton |
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Ð |
200 |
350 |
ns |
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IB2 = 1.0 Adc, VCC = 300 V) |
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Ð |
190 |
Ð |
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Turn±Off Time |
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toff |
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Ð |
1.0 |
2.5 |
μ |
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(TC = 125°C) |
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s |
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Ð |
1.6 |
Ð |
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Turn±On Time |
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(IC = 4.5 Adc, IB1 = 0.9 Adc |
(TC = 125°C) |
ton |
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Ð |
85 |
150 |
ns |
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IB1 = 2.25 Adc, VCC = 300 V) |
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Ð |
100 |
Ð |
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Turn±Off Time |
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(TC = 125°C) |
toff |
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Ð |
1.5 |
2.5 |
μs |
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Ð |
2.0 |
Ð |
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SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 μH) |
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Fall Time |
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(IC = 2.0 Adc, IB1 = 0.2 Adc |
(TC = 125°C) |
tfi |
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Ð |
100 |
180 |
ns |
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IB2 = 1.0 Adc) |
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Ð |
120 |
Ð |
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Storage Time |
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(TC = 125°C) |
tsi |
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Ð |
1.3 |
2.5 |
μs |
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Ð |
1.9 |
Ð |
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Crossover Time |
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(TC = 125°C) |
tc |
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Ð |
210 |
350 |
ns |
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Ð |
230 |
Ð |
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Fall Time |
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(IC = 4.5 Adc, IB1 = 0.9 Adc |
(TC = 125°C) |
tfi |
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Ð |
80 |
150 |
ns |
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IB2 = 2.25 Adc) |
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Ð |
100 |
Ð |
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Storage Time |
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(TC = 125°C) |
tsi |
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Ð |
1.6 |
3.2 |
μs |
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Ð |
2.1 |
Ð |
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Crossover Time |
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(TC = 125°C) |
tc |
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Ð |
170 |
300 |
ns |
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Ð |
200 |
Ð |
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Fall Time |
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(IC = 4.5 Adc, IB1 = 0.9 Adc |
(TC = 125°C) |
tfi |
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60 |
Ð |
180 |
ns |
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IB2 = 0.9 Adc) |
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Ð |
150 |
Ð |
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Storage Time |
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(TC = 125°C) |
tsi |
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2.6 |
Ð |
3.8 |
μs |
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Ð |
4.3 |
Ð |
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Crossover Time |
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(TC = 125°C) |
tc |
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Ð |
200 |
350 |
ns |
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Ð |
330 |
Ð |
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3±2 |
Motorola Bipolar Power Transistor Device Data |
BUL147 BUL147F
TYPICAL STATIC CHARACTERISTICS
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100 |
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° |
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V |
CE |
= 1 V |
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TJ = 125 C |
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GAIN |
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TJ = 25°C |
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, DC CURRENT |
10 |
TJ = ± 20°C |
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FE |
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h |
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1 |
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1 |
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10 |
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0.01 |
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0.1 |
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IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
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100 |
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TJ = 125°C |
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VCE = 5 V |
GAIN |
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TJ = 25°C |
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, DC CURRENT |
10 |
TJ = ± 20°C |
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FE |
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h |
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1 |
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0.01 |
0.1 |
1 |
10 |
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volts
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2 |
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TJ = 25°C |
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(VOLTS) |
1.5 |
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IC = 1 A |
3 A |
5 A |
8 A |
10 A |
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, VOLTAGE |
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1 |
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CE |
0.5 |
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V |
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0 |
0.1 |
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1 |
10 |
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0.01 |
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IB, BASE CURRENT (AMPS) |
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Figure 3. Collector Saturation Region
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1.3 |
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1.2 |
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(VOLTS) |
1.1 |
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1 |
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0.9 |
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, VOLTAGE |
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0.8 |
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0.7 |
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° |
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BE |
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TJ = 25 C |
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V |
0.6 |
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0.5 |
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° |
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IC/IB = 5 |
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TJ = 125 C |
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IC/IB = 10 |
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0.4 |
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0.01 |
0.1 |
1 |
10 |
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IC, COLLECTOR CURRENT (AMPS)
Figure 5. Base±Emitter Saturation Region
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10 |
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VOLTAGE(VOLTS) |
1 |
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I |
/I |
= 10 |
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, |
0.1 |
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C B |
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CE |
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V |
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IC/IB = 5 |
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TJ = 25°C |
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0.01 |
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TJ = 125°C |
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0.1 |
1 |
10 |
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0.01 |
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IC COLLECTOR CURRENT (AMPS)
Figure 4. Collector±Emitter Saturation Voltage
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10000 |
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Cib |
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TJ = 25°C |
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f = 1 MHz |
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1000 |
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(pF) |
Cob |
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CAPACITANCE |
100 |
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10 |
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C, |
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1 |
10 |
100 |
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1 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data |
3±3 |
BUL147 BUL147F
TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)
600 |
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IB(off) = IC/2 |
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IC/IB = 5 |
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500 |
VCC = 300 V |
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IC/IB = 10 |
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PW = 20 μs |
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400 |
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TJ = 125°C |
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t, TIME (ns) |
300 |
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TJ = 25°C |
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TIMEt,(ns) |
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200 |
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100 |
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0 |
1 |
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3 |
4 |
5 |
6 |
7 |
8 |
0 |
2 |
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4000 |
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IB(off) = IC/2 |
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3500 |
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TJ = 25°C |
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TJ = 125°C |
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VCC = 300 V |
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3000 |
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PW = 20 μs |
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I |
/I |
= 5 |
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C B |
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2500 |
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2000 |
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1500 |
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1000 |
IC/IB = 10 |
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500 |
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0 |
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1 |
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2 |
3 |
4 |
5 |
6 |
7 |
8 |
IC, COLLECTOR CURRENT (AMPS) |
IC, COLLECTOR CURRENT (AMPS) |
Figure 7. Resistive Switching, ton |
Figure 8. Resistive Switching, toff |
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3500 |
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IB(off) = IC/2 |
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4000 |
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TJ = 25°C |
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3500 |
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IB(off) = IC/2 |
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3000 |
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VCC = 15 V |
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TJ = 125 |
° |
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VCC = 15 V |
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C |
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I /I |
= 5 |
VZ = 300 V |
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3000 |
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V |
Z |
= 300 V |
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2500 |
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C B |
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LC = 200 μH |
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(ns) |
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LC = 200 μH |
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TIMEt, (ns) |
2000 |
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STORAGETIME |
2500 |
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IC |
= 2 A |
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2000 |
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1500 |
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1500 |
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1000 |
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si |
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, |
1000 |
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t |
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500 |
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° |
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500 |
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TJ = 25 C |
IC/IB = 10 |
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° |
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IC = 4.5 A |
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0 |
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TJ = 125 |
C |
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0 |
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2 |
3 |
4 |
5 |
6 |
7 |
8 |
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4 |
5 |
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8 |
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10 |
11 |
12 |
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14 |
15 |
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1 |
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IC COLLECTOR CURRENT (AMPS) |
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hFE, FORCED GAIN |
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Figure 9. Inductive Storage Time, tsi |
Figure 10. Inductive Storage Time, tsi(hFE) |
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300 |
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250 |
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tc |
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200 |
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tfi |
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(ns) |
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t, TIME |
150 |
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100 |
IB(off) = IC/2 |
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50 |
VCC = 15 V |
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TJ = 25°C |
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VZ |
= 300 V |
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L |
= 200 μH |
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TJ = 125°C |
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0 |
C |
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1 |
2 |
3 |
4 |
5 |
6 |
7 |
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IC, COLLECTOR CURRENT (AMPS) |
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250 |
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TJ = 25°C |
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IB(off) = IC/2 |
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200 |
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TJ = 125°C |
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VCC = 15 V |
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tc |
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VZ = 300 V |
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L = 200 |
μH |
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C |
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t, TIME (ns) |
150 |
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100 |
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50 |
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tfi |
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0 |
2 |
3 |
4 |
5 |
6 |
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8 |
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1 |
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IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc and tfi |
Figure 12. Inductive Switching, tc and tfi |
IC/IB = 5 |
IC/IB = 10 |
3±4 |
Motorola Bipolar Power Transistor Device Data |
BUL147 BUL147F
TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching)
|
180 |
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TJ = 25°C |
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IB(off) = IC/2 |
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300 |
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160 |
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TJ = 125°C |
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VCC = 15 V |
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250 |
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IC = 2 A |
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VZ = 300 V |
(ns) |
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TIME (ns) |
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L |
C |
= 200 |
μH |
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140 |
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TIME |
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200 |
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120 |
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FALL |
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CROSSOVER |
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150 |
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, |
100 |
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fi |
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t |
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, |
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C |
100 |
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80 |
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T |
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60 |
IC = 4.5 A |
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50 |
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4 |
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3 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
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13 |
14 |
15 |
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IC = 2 A |
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IB(off) = IC/2 |
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VCC = 15 V |
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VZ = 300 V |
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LC = 200 μH |
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IC = 4.5 A |
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TJ = 25°C |
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TJ = 125°C |
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3 |
4 |
5 |
6 |
7 |
8 |
9 |
10 |
11 |
12 |
13 |
14 |
15 |
hFE, FORCED GAIN |
hFE, FORCED GAIN |
Figure 13. Inductive Fall Time |
Figure 14. Inductive Crossover Time |
GUARANTEED SAFE OPERATING AREA INFORMATION
|
100 |
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9 |
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DC (BUL147) |
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8 |
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(AMPS) |
5 ms |
1 ms |
10 μs |
1 μs |
(AMPS) |
||
7 |
|||||||
10 |
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CURRENT |
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CURRENT |
6 |
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EXTENDED |
5 |
|||
1 |
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SOA |
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COLLECTOR |
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COLLECTOR |
4 |
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DC (BUL147F) |
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3 |
|||
0.1 |
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2 |
|||
, |
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, |
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C |
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C |
1 |
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I |
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I |
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0.01 |
100 |
|
1000 |
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0 |
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10 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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TC ≤ 125°C |
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IC/IB ≥ 4 |
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LC = 500 μH |
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± 5 V |
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VBE(off) = 0 V |
|
±1, 5 V |
|
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0 |
100 |
200 |
300 |
400 |
500 |
600 |
700 |
800 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area |
Figure 16. Reverse Bias Switching Safe Operating Area |
|
1.0 |
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FACTOR |
0.8 |
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SECOND BREAKDOWN |
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DERATING |
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DERATING |
0.6 |
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0.4 |
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POWER |
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0.2 |
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THERMAL DERATING |
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0.0 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
|
20 |
|||||||
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|
|
TC, CASE TEMPERATURE (°C) |
|
|
|||
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Fig-
ure 17. TJ(pk) may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn±off with the base±to±emitter junction reverse±biased. The safe level is specified as a reverse±biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Motorola Bipolar Power Transistor Device Data |
3±5 |