Материал: HGTD8P50
S E M I C O N D U C T O R
May 1996
HGTD8P50G1,
HGTD8P50G1S
8A, 500V P-Channel IGBTs
Features
•8A, 500V
•3.7V VCE(SAT)
•Typical Fall Time - 1800ns
•High Input Impedance
•TJ = +150oC
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drives. This P- channel IGBT can be paired with N-Channel IGBTs to form a complementary power switch and it is ideal for half bridge circuit configurations. These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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HGTD8P50G1 |
TO-251AA |
G8P50G |
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HGTD8P50G1S |
TO-252AA |
G8P50G |
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NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.e., HGTD8P50G1S9A.
The development type number for these devices is TA49015.
Package
JEDEC TO-251AA
EMITTER
COLLECTOR
GATE
(FLANGE) 
COLLECTOR
JEDEC TO-252AA
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(FLANGE) |
GATE |
COLLECTOR |
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COLLECTOR |
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EMITTER |
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Symbol
C
G 
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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HGTD8P50G1/G1S |
UNITS |
Collector-Emitter Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. BVCES |
-500 |
V |
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Emitter-Collector Breakdown Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. BVECS |
10 |
V |
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Collector Current Continuous |
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At T |
C |
= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. I |
-12 |
A |
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= +90oC |
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C25 |
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At T |
C |
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. I |
-8 |
A |
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C90 |
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Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . ICM |
-18 |
A |
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Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VGES |
±20 |
V |
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Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VGEM |
±30 |
V |
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Switching SOA at TC = +25oC, VCL = -350V . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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SSOA |
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No Snubber, Figure 17 - Circuit 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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-3 |
A |
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With 0.1μF Capacitor, Figure 17 - Circuit 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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-18 |
A |
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Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . PD |
66 |
W |
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Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . . . . |
0.53 |
W/oC |
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Operating and Storage Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . |
T |
, T |
-40 to +150 |
oC |
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J |
STG |
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oC |
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . . TL |
+260 |
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(0.125" from case for 5s) NOTE:
1. TJ = 25oC, VCL = 350V, RGE = 25Ω, Figure 17 - Circuit 2 (C1 = 0.1μF)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. |
File Number 3649.2 |
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Copyright © Harris Corporation 1996 |
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Specifications HGTD8P50G1, HGTD8P50G1S
Electrical Specifications TC = +25oC, Unless Otherwise Specified
PARAMETERS |
SYMBOL |
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TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
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Collector-Emitter Breakdown Voltage |
BVCES |
ICE = -250μA |
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VGE = 0V |
-500 |
- |
- |
V |
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VCL = -600V |
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Emitter-Collector Breakdown Voltage |
BVECS |
IEC = 1mA |
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VGE = 0V |
10 |
- |
- |
V |
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Collector-Emitter Leakage Current |
ICES |
VCE = BVCES |
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TC = +25oC |
- |
- |
-250 |
μA |
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V |
CE |
= 0.8 BV |
CES |
T |
C |
= +150oC |
- |
- |
-1.0 |
mA |
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Collector-Emitter Saturation Voltage |
V |
I |
CE |
= -3.0A |
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T |
C |
= +25oC |
- |
-2.5 |
-2.9 |
V |
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CE(SAT) |
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VGE = -15V |
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TC = +150oC |
- |
-2.3 |
-2.8 |
V |
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ICE = IC90 |
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TC = +25oC |
- |
-3.0 |
-3.7 |
V |
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VGE = -15V |
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TC = +150oC |
- |
-3.3 |
-4.0 |
V |
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Gate-Emitter Threshold Voltage |
VGE(TH) |
ICE = -1.0mA |
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VCE = VGE |
-4.5 |
-6.0 |
-7.5 |
V |
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Gate-Emitter Leakage Current |
IGES |
VGE = ±20V |
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- |
- |
±100 |
nA |
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Gate-Emitter Plateau Voltage |
VGE(PL) |
IC = 3A |
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VCE = 0.5 BVCES |
- |
-7.0 |
- |
V |
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On-State Gate Charge |
QG(ON) |
IC = 3A, |
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VGE = -15V |
- |
16 |
25 |
nC |
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VCE = 0.5 BVCES |
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VGE = -20V |
- |
22 |
30 |
nC |
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Current Turn-On Delay Time |
tD(ON)I |
RL = 113Ω |
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ICE = -3A, |
- |
45 |
- |
ns |
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VGE = -15V |
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Current Rise Time |
tRI |
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VCE = -350V |
- |
85 |
- |
ns |
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RG = 25Ω |
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Current Turn-off Delay Time |
t |
L = 100μH |
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T |
J |
= +150oC |
- |
480 |
680 |
ns |
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D(OFF)I |
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Fig. 17, Circuit 1 |
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Current Fall Time |
tFI |
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- |
1800 |
2500 |
ns |
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Turn-Off Energy (Note 1) |
EOFF |
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- |
0.8 |
- |
mJ |
Current Turn-Off Delay Time |
tD(OFF)I |
L = 100μH |
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ICE = -8A, |
- |
100 |
200 |
ns |
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VGE = -15V |
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Current Fall Time |
tFI |
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VCE = -350V |
- |
3500 |
4000 |
ns |
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RG = 25Ω |
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Turn-Off Energy (Note 1) |
EOFF |
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TJ = +150oC |
- |
1.3 |
- |
mJ |
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Fig. 17, Circuit 2 |
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C1 = .022μF |
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Latching Current |
IL |
L = 100μH |
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VGE = -15V |
-3 |
- |
- |
A |
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RG = 25Ω |
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TJ = +25oC |
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VCE = -350V |
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Fig. 17, Circuit 1 |
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Thermal Resistance |
RθJC |
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- |
1.75 |
1.90 |
oC/W |
NOTE:
1.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD8P50G1 and HGTD8P50G1S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses.
2
HGTD8P50G1, HGTD8P50G1S
Typical Performance Curves
PULSE DURATION = 250μs, DUTY CYCLE < 0.5%, VCE = -10V
(A) |
-20 |
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CURRENT |
-16 |
TC = -40oC |
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TC = +150oC |
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EMITTER- |
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-12 |
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T |
= +25oC |
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C |
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COLLECTOR, |
-8 |
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-4 |
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CE |
0 |
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I |
-4 |
-6 |
-8 |
-10 |
-12 |
-14 |
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VGE , GATE-TO-EMITTER VOLTAGE (V) |
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FIGURE 1. TRANSFER CHARACTERISTICS |
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-14 |
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(A) |
-12 |
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CURRENT |
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-10 |
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VGE = -15V |
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COLLECTORDC, |
-8 |
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-2 |
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-6 |
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-4 |
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CE |
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I |
0 |
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50 |
75 |
100 |
125 |
150 |
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25 |
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TC , CASE TEMPERATURE (oC)
FIGURE 3. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE
(A) |
-20 |
PULSE DURATION = 250μs, DUTY CYCLE < 0.5% |
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CURRENT |
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V |
= -15V |
-12V -10V |
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GE |
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-16 |
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EMITTER- |
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-9.0V |
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-12 |
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COLLECTOR, |
-8 |
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-8.0V |
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-4 |
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-7.0V |
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CE |
0 |
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-6.5V |
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I |
-2 |
-4 |
-6 |
-8 |
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0 |
-10 |
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VCE , COLLECTOR-EMITTER VOLTAGE (V) |
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FIGURE 2. SATURATION CHARACTERISTICS
PULSE DURATION = 250μs, DUTY CYCLE < 0.5%, VGE = -15V
(A) |
-20 |
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TC = +25oC |
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CURRENT |
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-16 |
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TC = -40oC |
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EMITTER- |
-12 |
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TC = |
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+150oC |
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COLLECTOR, |
-8 |
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-4 |
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CE |
0 |
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0 |
-1 |
-2 |
-3 |
-4 |
-5 |
-6 |
-7 |
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VCE , COLLECTOR-EMITTER VOLTAGE |
(V) |
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FIGURE 4. COLLECTOR-EMITTER SATURATION VOLTAGE
FREQUENCY = 1MHz
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700 |
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600 |
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(pF) |
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CIES |
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500 |
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CAPACITANCEC, |
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400 |
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300 |
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200 |
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COES |
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100 |
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0 |
CRES |
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-5 |
-10 |
-15 |
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0 |
-20 |
-25 |
VCE , COLLECTOR-EMITTER VOLTAGE (V)
FIGURE 5. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE
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T |
J |
= +25oC, V = -15V, I |
G(REF) |
= -0.391mA |
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GE |
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-400 |
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-15 |
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(V) |
VCE = -400V |
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VOLTAGEEMITTER- |
VCE = -100V |
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(V)VOLTAGEEMITTER |
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VCE = -400V |
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GATE-EMITTER VOLTAGE |
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COLLECTOR |
-200 |
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-7.5 |
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GE |
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GATE, - |
CE, |
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V |
V |
COLLECTOR-EMITTER VOLTAGE |
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0 |
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IG(REF) |
0 |
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IG(REF) |
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TIME (μs) |
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20 IG(ACT) |
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80 IG(ACT) |
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FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT. (REFER TO APPLICATION NOTES AN7254 AND AN7260)
3
HGTD8P50G1, HGTD8P50G1S
Typical Performance Curves (Continued)
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TJ = +150oC |
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-10 |
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(V) |
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VOLTAGE |
-5 |
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VGE = -10V |
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SATURATION, |
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VGE = -15V |
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CE(SAT) |
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V |
-1 |
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0 |
-2 |
-4 |
-6 |
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-8 |
-10 |
-12 |
-14 |
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ICE , COLLECTOR-EMITTER CURRENT (A) |
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FIGURE 7. SATURATION VOLTAGE AS A FUNCTION OF |
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COLLECTOR-EMITTER CURRENT |
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T |
= +150oC, V |
CE |
= -350V, V |
= -15V, L = 100μH |
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J |
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GE |
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1.0 |
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(μs) |
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RGE = 50Ω |
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TIME |
0.5 |
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RGE = 25Ω |
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TURN-OFF DELAY |
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D(OFF)I |
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FIG. 17, CIRCUIT 1 |
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t |
0.1 |
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-1 |
-2 |
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-3 |
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-4 |
-5 |
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ICE , PEAK COLLECTOR-EMITTER CURRENT (A)
FIGURE 9. TURN-OFF DELAY AS A FUNCTION OF COLLECTOREMITTER CURRENT
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10 |
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TJ = +150oC, RG = 25Ω, L = 100μH |
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(mJ) |
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FIG. 17, CIRCUIT 1 |
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LOSS |
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SWITCHINGOFF- |
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VCE = -350V, VGE = -15V |
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1.0 |
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TURN |
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VCE = -200V, VGE = -15V |
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, |
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OFF |
0.1 |
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W |
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-1 |
-2 |
-3 |
-4 |
-5 |
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ICE , PEAK COLLECTOR-EMITTER CURRENT (A)
FIGURE 8. TURN-OFF SWITCHING LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
TJ = +150oC, TC = +75oC, VGE = -15V, RGE = 25Ω, L = 100μH
(kHz) |
100 |
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FIG. 17, CIRCUIT 1 |
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FREQUENCY |
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50 |
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OPERATING, |
VCE = -350V |
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(DUTY FACTOR = 50%) |
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fMAX1 = 0.05/tD(OFF)I |
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fMAX2 = (PD - PC)/EOFF |
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PD = ALLOWABLE DISSIPATION |
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MAX |
PC = CONDUCTION DISSIPATION |
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RθJC = 1.9oC/W |
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f |
10 |
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-1 |
-5 |
-10 |
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ICE , PEAK COLLECTOR-EMITTER CURRENT (A) |
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FIGURE 10. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT AND VOLTAGE
TJ = +150oC, VGE = -15V, RG = 25Ω, L = 100μH
5
FIG. 17, CIRCUIT 1
4
s) |
3 |
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(μ |
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TIME |
VCE = -200V |
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FALL |
2 |
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VCE = -350V |
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FI |
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t |
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1
-1 |
-2 |
-3 |
-4 |
-5 |
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ICE , COLLECTOR-EMITTER CURRENT (A) |
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FIGURE 11. FALL TIME AS A FUNCTION OF COLLECTOREMITTER CURRENT
(A) |
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T |
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= 25oC, V |
= -15V, R = 25Ω, L = 100μH |
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J |
GE |
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G |
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CURRENT |
-25 |
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FIG. 17, CIRCUIT 2 |
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EMITTER- |
-20 |
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-15 |
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COLLECTOR |
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-5 |
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-10 |
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VCE = -350V |
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PEAK |
0 |
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10-1 |
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10-5 |
10-4 |
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10-3 |
10-2 |
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100 |
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CE |
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C1, SNUBBER CAPACITANCE (μF) |
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FIGURE 12. LATCHING CURRENT AS A FUNCTION OF SNUBBER CAPACITANCE
4
HGTD8P50G1, HGTD8P50G1S
Typical Performance Curves (Continued)
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VCE = -350V, VGE = -15V, RG = 25Ω, L = 100μH |
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-7 |
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-EMITTER |
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FIG. 17, CIRCUIT 1 |
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-6 |
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PEAKCOLLECTOR |
-5 |
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-4 |
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CURRENT(A) |
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CE |
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I |
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-3 |
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-50 |
0 |
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100 |
150 |
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TC , CASE TEMPERATURE (oC) |
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FIGURE 13. LATCHING CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE
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VCE = VGE, ICE = 1.0mA |
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(V) |
6.5 |
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VOLTAGE |
6.0 |
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THRESHOLD |
5.5 |
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GATE |
5.0 |
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TH |
4.5 |
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V |
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-40 |
0 |
40 |
80 |
120 |
160 |
TC , CASE TEMPERATURE (oC)
FIGURE 14. GATE THRESHOLD VOLTAGE AS A FUNCTION OF JUNCTION TEMPERATURE
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T |
C |
= 25oC, V |
= -15V, R = 25Ω, L = 100μH |
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GE |
G |
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100 |
0.5 |
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15 |
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THERMAL |
C/W) |
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EMITTER |
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10-1 |
0.05 |
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t1 |
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0.2 |
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12 |
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0.1 |
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PDS |
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COLLECTORPEAK, - |
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JC |
(RESPONSE |
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(A)CURRENT |
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9 |
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NORMALIZED, |
o |
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SINGLE PULSE |
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t2 |
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0.02 |
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FIG. 17, CIRCUIT 1 |
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0.01 |
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NOTES: |
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6 |
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10-2 |
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1. DUTY FACTOR, D = t1/t2 |
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2.PEAK TJ = (PDS x ZθJC x RθJC) + TA |
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3 |
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θ |
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CE |
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Z |
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10-3 |
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I |
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10-5 |
10-4 |
10-3 |
10-2 |
10-1 |
100 |
101 |
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0 |
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0 |
100 |
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200 |
300 |
400 |
500 |
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t1 , RECTANGULAR PULSE DURATION (s) |
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VCE , COLLECTOR-EMITTER (V) |
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FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL |
FIGURE 16. LATCHING CURRENT AS A FUNCTION OF |
IMPEDANCE, JUNCTION TO CASE |
COLLECTOR-EMITTER VOLTAGE |
Test Circuits
CIRCUIT 1 |
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CIRCUIT 2 |
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L = 100μH |
L = 100μH |
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D1 = GSI TranZorb |
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- |
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- |
VCC = 350V |
D1 |
VCC = 350V |
+ |
+ |
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RG = 25Ω |
RG = 25Ω |
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C1 |
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FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUITS
5