Материал: HGTP20N6
S E M I C O N D U C T O R
February 1996
HGTP20N60B3,
HGTG20N60B3
40A, 600V, UFS Series N-Channel IGBT
Features
•40A, 600V at TC = +25oC
•Square Switching SOA Capability
•Typical Fall Time - 140ns at +150oC
•Short Circuit Rated
•Low Conduction Loss
Description
The HGTP20N60B3 and the HGTG20N60B3 are Generation 3 MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
HGTP20N60B3 |
TO-220AB |
G20N60B3 |
HGTG20N60B3 |
TO-247 |
G20N60B3 |
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NOTE: When ordering, use the entire part number.
Formerly Developmental Type TA49050.
Package |
JEDEC TO-220AB |
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EMITTER |
COLLECTOR |
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GATE |
COLLECTOR |
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(FLANGE) |
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JEDEC STYLE TO-247
EMITTER
COLLECTOR
COLLECTOR |
GATE |
(BOTTOM SIDE
METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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HGTP20N60B3 |
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HGTG20N60B3 |
UNITS |
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. BVCES |
600 |
V |
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Collector-Gate Voltage, RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. BVCGR |
600 |
V |
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Collector Current Continuous |
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At T |
C |
= +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. I |
40 |
A |
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= +110oC |
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C25 |
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At T |
C |
. . |
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20 |
A |
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C110 |
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Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . ICM |
160 |
A |
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Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VGES |
±20 |
V |
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Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VGEM |
±30 |
V |
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Switching Safe Operating Area at TC = +150oC. . . . . . . . . . . . . . . . . . . . . . . . . . |
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SSOA |
80A at 0.8 BVCES |
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Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . PD |
165 |
W |
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Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . . . . |
1.32 |
W/oC |
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Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . |
T |
, T |
-40 to +150 |
oC |
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J |
STG |
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oC |
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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. . . TL |
260 |
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Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . |
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. . tSC |
4 |
μs |
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Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . |
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. . tSC |
10 |
μs |
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NOTE:
1.Repetitive Rating: Pulse width limited by maximum junction temperature.
2.VCE(PK) = 360V, TC = +125oC, RGE = 25Ω.
HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: |
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4,364,073 |
4,417,385 |
4,430,792 |
4,443,931 |
4,466,176 |
4,516,143 |
4,532,534 |
4,567,641 |
4,587,713 |
4,598,461 |
4,605,948 |
4,618,872 |
4,620,211 |
4,631,564 |
4,639,754 |
4,639,762 |
4,641,162 |
4,644,637 |
4,682,195 |
4,684,413 |
4,694,313 |
4,717,679 |
4,743,952 |
4,783,690 |
4,794,432 |
4,801,986 |
4,803,533 |
4,809,045 |
4,809,047 |
4,810,665 |
4,823,176 |
4,837,606 |
4,860,080 |
4,883,767 |
4,888,627 |
4,890,143 |
4,901,127 |
4,904,609 |
4,933,740 |
4,963,951 |
4,969,027 |
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CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. |
File Number 3723.2 |
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Copyright © Harris Corporation 1996 |
1 |
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Specifications HGTP20N60B3, HGTG20N60B3
Electrical Specifications TC = +25oC, Unless Otherwise Specified
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LIMITS |
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PARAMETERS |
SYMBOL |
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TEST CONDITIONS |
MIN |
TYP |
MAX |
UNITS |
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Collector-Emitter Breakdown Voltage |
BVCES |
IC = 250μA, VGE = 0V |
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600 |
- |
- |
V |
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Collector-Emitter Leakage Current |
ICES |
VCE = BVCES |
TC = +25oC |
- |
- |
250 |
μA |
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VCE = BVCES |
TC = +150oC |
- |
- |
1.0 |
mA |
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Collector-Emitter Saturation Voltage |
V |
I |
C |
= I , |
T |
C |
= +25oC |
- |
1.8 |
2.0 |
V |
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CE(SAT) |
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C110 |
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VGE = 15V |
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TC = +150oC |
- |
2.1 |
2.5 |
V |
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Gate-Emitter Threshold Voltage |
V |
I |
C |
= 250μA, |
T |
C |
= +25oC |
3.0 |
5.0 |
6.0 |
V |
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GE(TH) |
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VCE = VGE |
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Gate-Emitter Leakage Current |
IGES |
VGE = ±20V |
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- |
- |
±100 |
nA |
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Latching Current |
I |
T |
C |
= +150oC |
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80 |
- |
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A |
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L |
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VCE(PK) = 0.8 BVCES |
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VGE = 15V |
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RG = 10Ω |
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L = 45μH |
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Gate-Emitter Plateau Voltage |
VGEP |
IC = IC110, VCE = 0.5 BVCES |
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8.0 |
- |
V |
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On-State Gate Charge |
QG(ON) |
IC = IC110, |
VGE = 15V |
- |
80 |
105 |
nC |
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VCE = 0.5 BVCES |
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VGE = 20V |
- |
105 |
135 |
nC |
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Current Turn-On Delay Time |
t |
T |
C |
= 150oC |
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- |
25 |
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ns |
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D(ON)I |
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ICE = IC110 |
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Current Rise Time |
tRI |
VCE(PK) = 0.8 BVCES |
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- |
20 |
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ns |
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VGE = 15V |
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Current Turn-Off Delay Time |
tD(OFF)I |
RG= 10Ω |
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- |
220 |
275 |
ns |
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L = 100μH |
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Current Fall Time |
tFI |
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- |
140 |
200 |
ns |
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Turn-On Energy |
EON |
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- |
475 |
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μJ |
Turn-Off Energy (Note 1) |
EOFF |
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- |
1050 |
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μJ |
Thermal Resistance |
RθJC |
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- |
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0.76 |
oC/W |
NOTE:
1.Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTP20N60B3 and HGTG20N60B3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include diode losses.
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HGTP20N60B3, HGTG20N60B3 |
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Typical Performance Curves |
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100 |
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PULSE DURATION = 250μs, DUTY CYCLE <0.5%, TC = +25oC |
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100 |
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(A) |
PULSE DURATION = 250μs |
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(A) |
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VGE = 15V |
12V |
10V |
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DUTY CYCLE <0.5%, VCE = 10V |
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CURRENT |
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CURRENT |
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80 |
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80 |
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TC = +150oC |
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9V |
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COLLECTOR-EMITTER |
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COLLECTOR-EMITTER |
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60 |
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60 |
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TC = +25oC |
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8.5V |
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40 |
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40 |
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TC = -40oC |
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8.0V |
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20 |
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20 |
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7.5V |
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, |
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7.0V |
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CE |
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CE |
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I |
0 |
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0 |
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0 |
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2 |
4 |
6 |
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10 |
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6 |
8 |
10 |
12 |
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, GATE-TO-EMITTER VOLTAGE (V) |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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GE |
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FIGURE 1. TRANSFER CHARACTERISTICS |
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FIGURE 2. SATURATION CHARACTERISTICS |
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100 |
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(A) |
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PULSE DURATION = 250μs |
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DUTY CYCLE <0.5%, VGE = 15V |
T |
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= +25oC |
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COLLECTORCURRENT (A) |
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-EMITTER CURRENT |
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C |
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40 |
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80 |
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VGE = 15V |
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30 |
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60 |
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TC = -40oC |
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20 |
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40 |
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TC = +150oC |
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DC |
10 |
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COLLECTOR, |
20 |
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I |
0 |
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CE |
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I |
0 |
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+25 |
+50 |
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+75 |
+100 |
+125 |
+150 |
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0 |
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1 |
2 |
3 |
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4 |
5 |
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T , CASE TEMPERATURE (oC) |
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C |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE |
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FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE |
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5000 |
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600 |
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IG REF = 1.685mA, RL = 30Ω, TC = +25oC |
15 |
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FREQUENCY = 1MHz |
(V) |
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4000 |
CIES |
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VOLTAGE |
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VOLTAGE (V) |
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480 |
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12 |
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(pF) |
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BVCE = 600V |
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3000 |
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360 |
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9 |
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CAPACITANCEC, |
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, COLLECTOREMITTER- |
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-EMITTER |
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2000 |
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240 |
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BVCE = 400V |
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6 |
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COES |
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VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) |
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QG , GATE CHARGE (nC) |
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FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE |
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FIGURE 6. GATE CHARGE WAVEFORMS |
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HGTP20N60B3, HGTG20N60B3
Typical Performance Curves (Continued)
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100 |
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TIME (ns) |
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TJ = +150oC, RG = 10Ω, L = 100μH |
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DELAY |
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TURN-ON |
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VCE(PK) = 480V, VGE = 15V |
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D(ON)I |
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ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT
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500 |
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(ns)TIME |
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TJ = +150oC, RG = 10Ω, L = 100μH |
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-OFF DELAY |
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VCE(PK) = 480V, VGE = 15V |
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200 |
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D(OFF)I |
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ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
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100 |
TJ = +150oC, RG = 10Ω, L = 100μH |
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TIMERISE |
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VCE(PK) = 480V, VGE = 15V |
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TURN-ON |
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RI |
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ICE , COLLECTOR-EMITTER CURRENT (A) |
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FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF |
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COLLECTOR-EMITTER CURRENT |
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1400 |
TJ = +150oC, RG = 10Ω, L = 100μH |
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μJ) |
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1200 |
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LOSS |
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ENERGY |
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VCE(PK) = 480V, VGE = 15V |
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-ON |
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TURN, |
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ON |
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ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
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TJ = +150oC, RG = 10Ω, L = 100μH |
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TIME |
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FALL |
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ICE , COLLECTOR-EMITTER CURRENT (A) |
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FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF |
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COLLECTOR-EMITTER CURRENT |
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= +150oC, R |
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ENERGY |
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VCE(PK) = 480V, VGE = 15V |
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TURN, -OFF |
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OFF |
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ICE , COLLECTOR-EMITTER CURRENT (A)
FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF
COLLECTOR-EMITTER CURRENT
4
HGTP20N60B3, HGTG20N60B3
Typical Performance Curves (Continued) |
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= +150 |
o |
C, T |
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o |
C, V |
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= +15V |
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EMITTERCURRENT (A) |
100 |
T |
C |
= +150oC, V |
= 15V, R = 10Ω, L = 45μH |
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OPERATINGFREQUENCY (kHz) |
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RG = 10Ω, L = 100μH |
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PC = CONDUCTION DISSIPATION |
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VCE = 480V |
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fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) |
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fMAX2 = (PD - PC)/(EON + EOFF) |
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PD = ALLOWABLE DISSIPATION |
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RθJC = 0.76 C/W |
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ICE, COLLECTOR-EMITTER CURRENT (A) |
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VCE, COLLECTOR-EMITTER VOLTAGE (V) |
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FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF |
FIGURE 14. SWITCHING SAFE OPERATING AREA |
COLLECTOR-EMITTER CURRENT
THERMAL |
C/W) |
NORMALIZED |
o |
RESPONSE ( |
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θJC |
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0.5 |
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10-1 |
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t2 |
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SINGLE PULSE |
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DUTY FACTOR, D = t1 / t2 |
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PEAK TJ = (PD X ZθJC X RθJC) + TC |
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10-3 |
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10-1 |
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t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE
Operating Frequency Information
Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical
device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a
typical device and is bounded by the maximum rated junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I+ tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-
state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 17.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC.
The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-
off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0).
5