Материал: HGTP20N6

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HGTP20N60B3, HGTG20N60B3

Test Circuit

L = 100μH

90%

 

 

 

RHRP3060

VGE

10%

 

 

EOFF

EON

RG = 10Ω

VCE

 

 

90%

 

 

+

 

VDD = 480V

I

10%

 

-

 

CE

 

 

 

tD(OFF)I

tFI

tRI

 

 

 

 

 

 

tD(ON)I

FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT

FIGURE 17. SWITCHING TEST WAVEFORMS

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken:

1.Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting

springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent.

2.When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband.

3.Tips of soldering irons should be grounded.

4.Devices should never be inserted into or removed from circuits with power on.

5.Gate Voltage Rating - Never exceed the gate-voltage rat-

ing of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region.

6.Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-cir- cuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.

7.Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended.

ECCOSORBD™ is a Trademark Emerson and Cumming, Inc.

6

HGTP20N60B3, HGTG20N60B3

Packaging

 

 

ØP

E

 

Q

 

 

 

 

H1

D

 

 

E1

 

D1

 

 

L1

 

b1

 

 

L

 

b

60o

 

 

1

2

3

 

e

 

 

e1

 

A

45o

A1

TERM. 4

c

J1

LEAD 1

-

GATE

LEAD 2

-

COLLECTOR

LEAD 3

-

EMITTER

TERM. 4

-

COLLECTOR

TO-220AB

3 LEAD JEDEC TO-220AB PLASTIC PACKAGE

 

INCHES

MILLIMETERS

 

SYMBOL

 

 

 

 

NOTES

MIN

MAX

MIN

MAX

 

 

 

 

 

 

A

0.170

0.180

4.32

4.57

-

 

 

 

 

 

 

A1

0.048

0.052

1.22

1.32

-

b

0.030

0.034

0.77

0.86

3, 4

 

 

 

 

 

 

b1

0.045

0.055

1.15

1.39

2, 3

c

0.014

0.019

0.36

0.48

2, 3, 4

 

 

 

 

 

 

D

0.590

0.610

14.99

15.49

-

 

 

 

 

 

 

D1

-

0.160

-

4.06

-

E

0.395

0.410

10.04

10.41

-

 

 

 

 

 

 

E1

-

0.030

-

0.76

-

e

0.100 TYP

2.54 TYP

5

 

 

 

 

e1

0.200 BSC

5.08 BSC

5

H1

0.235

0.255

5.97

6.47

-

J1

0.100

0.110

2.54

2.79

6

L

0.530

0.550

13.47

13.97

-

 

 

 

 

 

 

L1

0.130

0.150

3.31

3.81

2

ØP

0.149

0.153

3.79

3.88

-

 

 

 

 

 

 

Q

0.102

0.112

2.60

2.84

-

 

 

 

 

 

 

NOTES:

1.These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87.

2.Lead dimension and finish uncontrolled in L1.

3.Lead dimension (without solder).

4.Add typically 0.002 inches (0.05mm) for solder coating.

5.Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.

6.Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.

7.Controlling dimension: Inch.

8.Revision 1 dated 1-93.

7

HGTP20N60B3, HGTG20N60B3

Packaging (Continued)

E

A

TERM. 4

 

ØS

ØP

 

Q

 

ØR

D

L1

 

 

b1

 

 

 

 

 

 

 

 

 

L

 

 

b2

c

 

 

 

 

b

 

 

 

 

 

 

 

 

1

2

3

 

3

2

1

 

e

 

J1

BACK VIEW

 

 

 

 

 

 

e1

 

 

 

 

 

 

 

LEAD 1

-

GATE

 

 

 

 

LEAD 2

-

COLLECTOR

 

 

 

 

LEAD 3

-

EMITTER

 

 

 

 

TERM. 4

-

COLLECTOR

 

 

TO-247

3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE

 

INCHES

MILLIMETERS

 

SYMBOL

 

 

 

 

NOTES

MIN

MAX

MIN

MAX

 

 

 

 

 

 

A

0.180

0.190

4.58

4.82

-

 

 

 

 

 

 

b

0.046

0.051

1.17

1.29

2, 3

 

 

 

 

 

 

b1

0.060

0.070

1.53

1.77

1, 2

b2

0.095

0.105

2.42

2.66

1, 2

c

0.020

0.026

0.51

0.66

1, 2, 3

 

 

 

 

 

 

D

0.800

0.820

20.32

20.82

-

 

 

 

 

 

 

E

0.605

0.625

15.37

15.87

-

 

 

 

 

 

 

e

0.219 TYP

5.56 TYP

4

 

 

 

 

e1

0.438 BSC

11.12 BSC

4

J1

0.090

0.105

2.29

2.66

5

L

0.620

0.640

15.75

16.25

-

 

 

 

 

 

 

L1

0.145

0.155

3.69

3.93

1

ØP

0.138

0.144

3.51

3.65

-

 

 

 

 

 

 

Q

0.210

0.220

5.34

5.58

-

 

 

 

 

 

 

ØR

0.195

0.205

4.96

5.20

-

 

 

 

 

 

 

ØS

0.260

0.270

6.61

6.85

-

 

 

 

 

 

 

NOTES:

1.Lead dimension and finish uncontrolled in L1.

2.Lead dimension (without solder).

3.Add typically 0.002 inches (0.05mm) for solder coating.

4.Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.

5.Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.

6.Controlling dimension: Inch.

7.Revision 1 dated 1-93.

All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.

Sales Office Headquarters

For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS

NORTH AMERICA

EUROPE

ASIA

Harris Semiconductor

Harris Semiconductor

Harris Semiconductor PTE Ltd.

P. O. Box 883, Mail Stop 53-210

Mercure Center

No. 1 Tannery Road

Melbourne, FL 32902

100, Rue de la Fusee

Cencon 1, #09-01

TEL: 1-800-442-7747

1130 Brussels, Belgium

Singapore 1334

(407) 729-4984

TEL: (32) 2.724.2111

TEL: (65) 748-4200

FAX: (407) 729-5321

FAX: (32) 2.724.22.05

FAX: (65) 748-0400

 

 

 

 

 

 

 

 

 

S E M I C O N D U C T O R

 

8

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