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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Designer's Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode

The MJ10007 Darlington transistor is designed for high±voltage, high±speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Fast Turn±Off Times

30 ns Inductive Fall Time Ð 25 _C (Typ)
500 ns Inductive Storage Time Ð 25 _C (Typ)
Operating Temperature Range ±65 to +200_C
100_C Performance Specified for:	≈ 100	≈ 15
100_C Performance Specified for:

MJ10007*

*Motorola Preferred Device

10 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

400 VOLTS

150 WATTS

CASE 1±07 TO±204AA (TO±3)

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	400	Vdc
Collector±Emitter Voltage	VCEX	450	Vdc
Collector±Emitter Voltage	VCEV	500	Vdc
Emitter Base Voltage	VEB	8.0	Vdc
Collector Current Ð Continuous	IC	10	Adc
Ð Peak (1)	ICM	20
Base Current Ð Continuous	IB	2.5	Adc
Ð Peak (1)	IBM	5.0
Total Power Dissipation @ TC = 25_C	PD	150	Watts
@ TC = 100_C		100
Derate above 25_C		0.86	_
			W/ C
Operating and Storage Junction Temperature Range	TJ, Tstg	± 65 to +200	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RqJC	1.17	_C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds	TL	275	_C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

Designer's and SWITCHMODE are trademarks of Motorola, Inc.

Designer's Data for ªWorst Caseº Conditions Ð The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1995

MJ10007

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Sustaining Voltage (Table 1)		VCEO(sus)	400	Ð	Ð	Vdc
(IC = 250 mA, IB = 0, Vclamp = Rated VCEO)
Collector±Emitter Sustaining Voltage (Table 1, Figure 12)		VCEX(sus)	450			Vdc
(IC = 1 A, Vclamp = Rated VCEX, TC = 100_C)			450	Ð	Ð
(IC = 5 A, Vclamp = Rated VCEX, TC = 100_C)			325	Ð	Ð
Collector Cutoff Current		ICEV				mAdc
(VCEV = Rated Value, VBE(off) = 1 5 Vdc)			Ð	Ð	0.25
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C)			Ð	Ð	5.0
Collector Cutoff Current		ICER	Ð	Ð	5.0	mAdc
(VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C)
Emitter Cutoff Current		IEBO	Ð	Ð	175	mAdc
(VEB = 2 Vdc, IC = 0)
SECOND BREAKDOWN

Second Breakdown Collector Current with base forward biased		IS/b		See Figure 11
ON CHARACTERISTICS (2)

DC Current Gain		hFE				Ð
(IC = 2.5 Adc, VCE = 5.0 Vdc)			40	Ð	500
(IC = 5.0 Adc, VCE = 5.0 Vdc)			30	Ð	300
Collector Emitter Saturation Voltage		VCE(sat)				Vdc
(IC = 5.0 Adc, IB = 250 mAdc)			Ð	Ð	1.9
(IC = 10 Adc, IB = 1.0 Adc)			Ð	Ð	2.9
(IC = 5.0 Adc, IB = 250 mAdc, TC = 100_C)			Ð	Ð	2.0
Base±Emitter Saturation Voltage		VBE(sat)				Vdc
(IC = 5.0 Adc, IB = 250 mAdc)			Ð	Ð	2.5
(IC = 5.0 Adc, IB = 250 mAdc, TC = 100_C)			Ð	Ð	2.5
Diode Forward Voltage (1)		Vf	Ð	3.0	5	Vdc
(IF = 5.0 Adc)
DYNAMIC CHARACTERISTICS

Small Signal Current Gain		hfe	10	Ð	Ð	Ð
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
Output Capacitance		Cob	60	Ð	275	pF
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS

Resistive Load (Table 1)

Delay Time		td	Ð	0.05	0.2	μs
Rise Time	(VCC = 250 Vdc, IC = 5.0 A,	t	Ð	0.25	0.6	μs
	IB1 = 250 mA, VBE(off) = 5.0 Vdc, tp = 50 μs,	r
Storage Time	IB1 = 250 mA, VBE(off) = 5.0 Vdc, tp = 50 μs,	ts	Ð	0.5	1.5	μs
Storage Time	Duty Cycle v 2.0%)	ts	Ð	0.5	1.5	μs
Fall Time		tf	Ð	0.06	0.5	μs
Inductive Load Clamped (Table 1)

Storage Time	(IC = 5.0 A(pk), Vclamp = Rated VCEX, IB1 = 250 mA,	tsv	Ð	0.8	2.0	μs
Crossover Time	VBE(off) = 5.0 Vdc, TC = 100_C)	t	Ð	0.6	1.5	μs
		c
Storage Time	(IC = 5.0 A(pk), Vclamp = Rated VCEX, IB1 = 250 mA,	tsv	Ð	0.5	Ð	μs
Crossover Time	VBE(off) = 5.0 Vdc, TC = 25_C)	t	Ð	0.3	Ð	μs
		c

(1) The internal Collector±to±Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(1)Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

(2)Pulse Test: PW = 300 μs, Duty Cycle v 2%.

2	Motorola Bipolar Power Transistor Device Data

hFE, DC CURRENT GAIN

																														MJ10007
												TYPICAL CHARACTERISTICS
300																(VOLTS)	3												TJ = 25°C
300																	3.4
200					T	J	=	150	°C							VOLTAGE
200
100

																		IC	= 0.3 A		2.5	A			5	A			10 A


70								25	°C								2.6
								25	°C								2.6

50																COLLECTOR±EMITTER	1


30																	2.2
																	2.2

							± 55		°C								1.8
20


10																	1.4




7
7
5

										VCE =	5 V					,
																CE


3																V	0.6
3																V	0.6
0.1	0.2	0.3		0.5	0.7			1		2		3	5	7	10		10	20		30	50		70	100			200	300		500 700	1 k
			IC, COLLECTOR CURRENT (AMP)																			IB, BASE CURRENT (mA)
		Figure 1. DC Current Gain																		Figure 2. Collector Saturation Region

COLLECTOR±EMITTER SATURATION	VOLTAGE (VOLTS)
,
CE(sat)
V

2.4											2.8
										(VOLTS)			VBE(sat) @ IC/IB = 10
2	IC/IB = 10									(VOLTS)	2.4		VBE(on) @ VCE = 5 V
													VBE(on) @ VCE = 5 V
										VOLTAGE
1.6										VOLTAGE	2				TJ = ± 55°C
															TJ = ± 55°C
										BASE±EMITTER
0.8				TJ = ± 55°C						BASE±EMITTER	1.2					25°C
				TJ = ± 55°C												25°C
1.2											1.6					25°C
					25°C											25°C
					25°C
										,						150°C
										BE						150°C
					150°C					V
0.4					150°C						0.8
0.4	0.2	0.3	0.5	0.7	1	2	3	5	7	10	0.8	0.2	0.3	0.5	0.7	1	2	3	5	7	10
0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10
		IC, COLLECTOR CURRENT (AMP)											IC, COLLECTOR CURRENT (AMP)

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter Voltage

	103						400
	VCE	= 250 V														TJ = 25°C
μA)						(pF)										TJ = 25°C
μA)	TJ = 125°C					(pF)
CURRENTCOLLECTOR(	102					CAPACITANCEOUTPUT,	200
CURRENTCOLLECTOR(	100	100°C				CAPACITANCEOUTPUT,


	1	°
	10	75 C												Cob
														Cob
							100
	REVERSE			FORWARD			80
C						ob
,						C	60
I		25°C				C	60
		25°C
	10±1	0	+ 0.2	+ 0.4	+ 0.6	+ 0.8	40	0.2	0.5	1	2	5	10	20	50	100 200	500	1000
	± 0.2	0	+ 0.2	+ 0.4	+ 0.6	+ 0.8	0.1	0.2	0.5	1	2	5	10	20	50	100 200	500	1000
		VBE, BASE±EMITTER VOLTAGE (VOLTS)								VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Collector Cutoff Region

Figure 6. Output Capacitance

Motorola Bipolar Power Transistor Device Data

3

MJ10007

Table 1. Test Conditions for Dynamic Performance

VCEO(sus)

1

INPUT CONDITIONS

20

0

2

PW Varied to Attain

IC = 250 mA

CIRCUIT VALUES

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

INDUCTIVE TEST CIRCUIT

CIRCUITS	TUT		Rcoil
	1	1N4937	Rcoil
		1N4937
	INPUT	OR	Lcoil
	INPUT	EQUIVALENT	Lcoil
	SEE ABOVE FOR	Vclamp
	DETAILED CONDITIONS		V
	DETAILED CONDITIONS		V
TEST			CC
TEST	2	RS =
		0.1 Ω

VCEX(sus) AND INDUCTIVE SWITCHING	RESISTIVE SWITCHING

INDUCTIVE TEST CIRCUIT

TUT		Rcoil
1	1N4937	Rcoil
INPUT	OR	Lcoil
INPUT	EQUIVALENT	Lcoil
SEE ABOVE FOR	EQUIVALENT
SEE ABOVE FOR	Vclamp
DETAILED CONDITIONS	Vclamp	V
		CC
2	RS =
	0.1 Ω

	Lcoil = 180 μH	VCC = 250 V
	Rcoil = 0.05 Ω
		RL = 50 Ω
	Vclamp = Rated VCEX Value
	VCC = 20 V	Pulse Width = 50 μs
	fo = 500 kHz

OUTPUT WAVEFORMS								RESISTIVE TEST CIRCUIT
IC	tf UNCLAMPED [ t2	t1 Adjusted to
IC	tf UNCLAMPED [ t2	Obtain I
					C				TUT
				Lcoil (ICpk)					TUT
IC(pk)		t	≈	Lcoil (ICpk)				1	RL
	tf CLAMPED	1			VCC
	tf CLAMPED				VCC			2
	t			L		(I	)	2	VCC
	t			L	coil	(I	)		VCC
t1	tf	t2	≈		coil	Cpk
t1	tf	t2	≈		VClamp
					VClamp
VCE		Test Equipment
VCE or		Scope Ð Tektronix
VCE or		475 or Equivalent
Vclamp		475 or Equivalent
TIME	t
TIME	t2
	t2

IC			V
	90% Vclamp	90% IC	clamp
	90% Vclamp	90% IC
tsv	trv	tfi	tti
Vclamp		tc
Vclamp	10%	10%
90% IB1	Vclamp	IC	2%
90% IB1			I
			C
IB
	TIME

Figure 7. Inductive Switching Measurements

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp trv = Voltage Rise Time, 10±90% Vclamp

tfi = Current Fall Time, 90±10% IC tti = Current Tail, 10±2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the turn±off waveforms is shown in Figure 7 to aid in the visual identity of these terms.

4	Motorola Bipolar Power Transistor Device Data

SWITCHING TIMES NOTE (continued)

For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN±222.

PSWT = 1/2 VCC IC (tc) f

MJ10007

In general, trv + tfi ]tc. However, at lower test currents this relationship may not be valid.

As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a ªSWITCHMODEº transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C.

RESISTIVE SWITCHING PERFORMANCE

t, TIME ( μs)

1

0.7VCC = 250 V

0.5	IB1 = 250 mA
0.3	TJ = 25°C
0.3
0.2
0.2

0.1							tr
0.07


0.05
0.05
0.03
0.03							td
0.02
0.02
0.01

	0.2	0.3	0.5	0.7	1	2	3	5	7	10
0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMP)

t, TIME ( μs)

5
5
3									VBE(off)		=	5	V
3									VCC =		250	V
2			t						VCC =		250	V
2			t	s					IB1 = 250			mA
1									TJ = 25°C
1
0.7


0.5
0.5
0.3		tf
0.2
0.2
0.1


0.07


0.05
0.05	0.2	0.3	0.5		0.7	1	2	3		5		7		10
0.1	0.2	0.3	0.5		0.7	1	2	3		5		7		10

IC, COLLECTOR CURRENT (AMP)

Figure 8. Turn±On Time

Figure 9. Turn±Off Time

	THERMAL RESISTANCE (NORMALIZED)	1.0
		0.7	D = 0.5
		0.5	D = 0.5
r(t), EFFECTIVE TRANSIENT		0.5
		0.3		0.2
				0.2
		0.2
		0.1		0.1									RθJC = r(t) θJC					P(pk)
		0.1		0.05									RθJC = r(t) θJC					P(pk)
		0.07		0.05									RθJC = 1.17°C/W MAX
				0.02									RθJC = 1.17°C/W MAX
													D CURVES APPLY FOR POWER
		0.05

													PULSE TRAIN SHOWN						t1
		0.03			0.01								PULSE TRAIN SHOWN						t1
		0.03			0.01								READ TIME AT t1						t2
		0.02		SINGLE PULSE									TJ(pk) ± TC = P(pk) RθJC(t)					DUTY CYCLE, D = t1/t2
																		DUTY CYCLE, D = t1/t2
		0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
		0.01		0.02 0.03	0.05	0.1	0.2	0.3	0.5	1.0	2.0	3.0	5.0	10	20	30	50	100	200	300	500	1000
											t, TIME (ms)

Figure 10. Thermal Response

Motorola Bipolar Power Transistor Device Data

5

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