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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MJE16106/D

Designer's Data Sheet

NPN Silicon Power Transistor

Switchmode Bridge Series

. . . specifically designed for use in half bridge and full bridge off line converters.

•Excellent Dynamic Saturation Characteristics

•Rugged RBSOA Capability

•Collector±Emitter Sustaining Voltage Ð V CEO(sus) Ð 400 V

•Collector±Emitter Breakdown Ð V (BR)CES Ð 650 V

•State±of±Art Bipolar Power Transistor Design

•Fast Inductive Switching:

tfi = 30 ns (Typ) @ 100_C tc = 65 ns (Typ) @ 100_C

tsv = 1.3 μs (Typ) @ 100_C

• Ultrafast FBSOA Specified

• 100_C Performance Specified for: RBSOA

Inductive Load Switching Saturation Voltages Leakages

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Sustaining Voltage	VCEO(sus)	400	Vdc
Collector±Emitter Breakdown Voltage	VCES	650	Vdc
Emitter±Base Voltage	VEBO	6	Vdc
Collector Current Ð Continuous	IC	8	Adc
Ð Pulsed (1)	ICM	16
Base Current Ð Continuous	IB	6	Adc
Ð Pulsed (1)	IBM	12
Total Power Dissipation @ TC = 25_C	PD	100	Watts
@ TC = 100_C		40
Derated above 25_C		0.8	_
			W/ C
Operating and Storage Temperature	TJ, Tstg	± 55 to 150	_C

THERMAL CHARACTERISTICS

Thermal Resistance Ð Junction to Case	RqJC	1.25	_C/W
Maximum Lead Temperature for	TL	275	_C
Soldering Purposes 1/8″ from
Case for 5 Seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

MJE16106

POWER TRANSISTORS

8 AMPERES

400 VOLTS

100 AND 125 WATTS

CASE 221A±06

TO±220AB

Designer's Data for ªWorst Caseº Conditions Ð The Designer' s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves Ð representing boundaries on device characteristics Ð are given to facilitate ªworst caseº design.

Designer's and SWITCHMODE are trademarks of Motorola Inc.

REV 1

Motorola, Inc. 1995

MJE16106

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

	Characteristic		Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (1)

Collector±Emitter Sustaining Voltage (Table 1)			VCEO(sus)	400	Ð	Ð	Vdc
(IC = 20 mAdc, IB = 0)
Collector Cutoff Current			ICEV				μAdc
(VCE = 650 Vdc, VBE(off) = 1.5 V)				Ð	Ð	100
(VCE = 650 Vdc, VBE(off) = 1.5 V, TC = 100_C)				Ð	Ð	1000
Collector Cutoff Current			ICER	Ð	Ð	1000	μAdc
(VCE = 650 Vdc, RBE = 50 Ω, TC = 100_C)
Emitter±Base Leakage			IEBO	Ð	Ð	10	μAdc
(VEB = 6.0 Vdc, IC = 0)
ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage			VCE(sat)				Vdc
(IC = 2.5 Adc, IB = 0.25 Adc)				Ð	0.2	0.9
(IC = 5.0 Adc, IB = 0.5 Adc)				Ð	0.4	2.0
(IC = 5.0 Adc, IB = 1.0 Adc)				Ð	0.2	1.0
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100_C)				Ð	0.3	1.5
Base±Emitter Saturation Voltage			VBE(sat)				Vdc
(IC = 5.0 Adc, IB = 1.0 Adc)				Ð	0.9	1.5
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100_C)				Ð	0.8	1.5
DC Current Gain			hFE	6	13	22	Ð
(IC = 8.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS

Dynamic Saturation			VCE(dsat)	See Figures 11, 12, and 13			V
Output Capacitance			Cob	Ð	Ð	300	pF
(VCE = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS

Inductive Load (Table 1)

Storage			tsv	Ð	950	2000	ns
Crossover		TJ = 25_C	tc	Ð	45	150
Fall Time	IC = 5.0 A, IB1 = 0.5 A,		tfi	Ð	20	75
	VBE(off) = 5 V,
Storage	VBE(off) = 5 V,		tsv	Ð	1300	2600
Storage	VCE(pk) = 250 V		tsv	Ð	1300	2600
Crossover		TJ = 100_C	tc	Ð	65	200
Fall Time			tfi	Ð	30	125
Resistive Load (Table 2)

Delay Time			td	Ð	30	Ð	ns
Rise Time	IC = 5.0 A, IB1 = 0.5 A,	IB2 = 1.0 A	tr	Ð	200	Ð
Storage Time	IC = 5.0 A, IB1 = 0.5 A,	IB2 = 1.0 A	ts	Ð	1800	Ð
Storage Time	VCC = 250 V,		ts	Ð	1800	Ð
Fall Time	PW = 30 μs,		tf	Ð	100	Ð
Fall Time	Duty Cycle = v 2.0%		tf	Ð	100	Ð
Storage Time	Duty Cycle = v 2.0%	VBE(off) = 5 V	ts	Ð	1200	Ð
Storage Time			ts	Ð	1200	Ð
Fall Time			tf	Ð	70	Ð
Fall Time			tf	Ð	70	Ð

(1) Pulse Test: Pulse Width = 300 μs, Duty Cycle v 2.0%.

2	Motorola Bipolar Power Transistor Device Data

MJE16106

TYPICAL STATIC CHARACTERISTICS

	40		TJ = 100°C							(VOLTS)	3
	30		TJ = 100°C	TJ = 25°C							2

										VOLTAGE
CURRENT GAIN	20										1
											0.7
				TJ = ± 55°C							0.5
	10			TJ = ± 55°C
	10										0.3
											0.2
, DC	7									COLLECTOR±EMITTER,	0.2
	7

FE	5										0.1
h	5										0.1
								VCE = 5.0 V			0.07
								VCE = 5.0 V			0.05
	3										0.05
	2									CE	0.03
	2	0.02	0.05	0.1	0.2	0.5	1	2	5	V	0.03
	0.01	0.02	0.05	0.1	0.2	0.5	1	2	5	10
			IC, COLLECTOR CURRENT (AMPS)

						TJ = 100°C
				TJ = 25°C
								IC/IB = 5
								IC/IB = 10
0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10
		IC, COLLECTOR CURRENT (AMPS)

Figure 1. DC Current Gain	Figure 2. Collector±Emitter Saturation Voltage

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

5				TJ = 25°C
3				TJ = 25°C
3
2	IC = 1 A	3 A	5 A 7 A	8 A
	IC = 1 A	3 A	5 A 7 A

0.7

0.5

0.3

0.2

0.1

0.07

0.05

.01 .02 .03 .05 .070.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10

IB, BASE CURRENT (AMPS)

	2.0
(VOLTS)	1.5
(VOLTS)
VOLTAGE	1.0
VOLTAGE	0.7	TJ = 25°C
, BASE±EMITTER	0.7
	0.5	TJ = 100°C
		TJ = 100°C
	0.3							IC/IB = 10
BE								IC/IB = 5
V
	0.2	0.2	0.3	0.5	0.7	1	2	3	5	7	10
	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Collector±Emitter Saturation Region

Figure 4. Base±Emitter Saturation Region

	10K
	7K
	5K
	3K									TJ = 25°C
(pF)	2K			Cib						TJ = 25°C
	2K									f = 1.0 kHz
	1K									f = 1.0 kHz
CAPACITANCE	1K
	700
	500
	300
	200				Cob
	100				Cob
C,	100
C,	70
	70
	50
	30
	20
	10	0.2	0.5	1	2	5	10	20	50	100 200	500	1000
	0.1	0.2	0.5	1	2	5	10	20	50	100 200	500	1000
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 5. Capacitance

Motorola Bipolar Power Transistor Device Data

MJE16106

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

IC/IB = 10, TC = 100°C, VCE(pk) = 250 V

t sv, STORAGE TIME (ns)

20K								1K
								700
10K		IB2 = 2 (IB1)					(ns)	500		IB2 = 2 (IB1)
7K		IB2 = 2 (IB1)			IB2 = IB1		(ns)	300	IB2	= IB1
5K							TIME	200	IB2	= IB1
							TIME

3K	V		= 2 V				CROSSOVER,				VBE(off) = 5 V
2K	V		= 2 V				CROSSOVER,	100			VBE(off) = 5 V		VBE(off) = 2 V
2K								100
								70
1K								50
700		BE(off)		VBE(off) = 5 V			c	30
500				VBE(off) = 5 V			t	30
500								20
								20
300
200								10
1.5	2	3		5	7	10	15	1.5	2	3	5	7	10	15
		IC, COLLECTOR CURRENT (AMPS)								IC, COLLECTOR CURRENT (AMPS)

Figure 6. Inductive Storage Time

Figure 7. Crossover Time

tfi, FALL TIME (ns)

1 K
700
500
300
200		VBE(off) = 2 V	IB2 = IB1
			IB2 = IB1
100
70
50				VBE(off) = 5 V
30				VBE(off) = 5 V
30
20		IB2 = 2 (IB1)
10
1.5	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Collector Current Fall Time

		IC(pk)	VCE(pk)
			VCE(pk)
		90% VCE(pk)	90% IC(pk)
IC	tsv	trv	tfi		tti
VCE			tc
VCE		10% VCE(pk)
I	90% I	10% VCE(pk)		10%	2% IC
I				I	2% IC
B				I
	B1			C(pk)
		t,TIME

Figure 9. Inductive Switching Measurements

	10
(AMPS)	9
(AMPS)	8
CURRENT	8
	7								IB1	= 1.0 A
	6								IB1	= 1.0 A
	6								IB1	= 1.0 A

BASE	5
	5
	4
, REVERSE	4
	3							IC = 5.0 A
								IC = 5.0 A
	2							TJ = 25°C
B2	1
I

	0	1	2	3	4	5	6	7	8	9	10
	0	1	2	3	4	5	6	7	8	9	10
			VBE(off), REVERSE BASE VOLTAGE (VOLTS)

Figure 10. Peak Reverse Base Current

4	Motorola Bipolar Power Transistor Device Data

								MJE16106
					Table 1. Inductive Load Switching
		Drive Circuit				VCEO(sus)
+15						VCEO(sus)		IC(pk)
1 μF	150 Ω	100 Ω	100 μF			L = 10 mH		IC(pk)
1 μF	150 Ω	100 Ω	100 μF			RB2 = ∞		IC
						RB2 = ∞		IC
			MTP8P10		MTP8P10	VCC = 20 Volts		VCE(pk)
						I	= 20 mA	VCE(pk)
						C(pk)
					RB1	Inductive Switching		V
		MPF930				L = 200 μH		CE
		MPF930			A	L = 200 μH
+10					A	RB2 = 0
MPF930					RB2	VCC = 20 Volts		I
					RB2	RB1 selected for desired IB1		B1
50 Ω			MUR105			RB1 selected for desired IB1		IB
50 Ω			MUR105			RBSOA		IB
					MTP12N10	RBSOA
					MTP12N10	L = 200 μH
						L = 200 μH		IB2
500 μF			MJE210			RB2 = 0		IB2
500 μF						VCC = 20 Volts
	150 Ω			1 μF		VCC = 20 Volts		*IC
	150 Ω			1 μF		R selected for desired I		*IC
						B1	B1	L
								L
Voff							A	T.U.T.
					Lcoil (ICpk)		A	T.U.T.
*Tektronix AM503	Scope Ð Tektronix			T1 [	Lcoil (ICpk)	T1	+ V	MR918
*P6302 or Equivalent	7403 or Equivalent			T1 [	VCC	T1	+ V	*IB
				T1 adjusted to obtain IC(pk)		0 V		Vclamp	VCC

Note: Adjust Voff to obtain desired VBE(off) at Point A.		± V

Table 2. Resistive Load Switching

td and tr

ts and tf

H.P. 214

*IC

EQUIV.

*IB

P.G.

V(off) adjusted

T.U.T.

to give specified

RB = 8.5 Ω

off drive

VCC

250 V

5 A

VCC

250 Vdc

IB1

0.5 A

≈ 11 V

25 Ω

IB2

Per Spec

5 A

0 V

RB1

30 Ω

0.5 A

tr ≤ 15 ns

Per Spec

*Tektronix AM503

25 Ω

*P6302 or Equivalent

VCE	VCE(dsat) = DYNAMIC SATURATION VOLTAGE							(VOLTS)
VCE	AND IS MEASURED FROM THE 90% POINT OF							VOLTAGE
	IB1 (t = 0) TO A MEASUREMENT POINT ON THE							VOLTAGE
	TIME AXIS (t1, t2 or t3 etc.)							COLLECTOR±EMITTER
IB1								COLLECTOR±EMITTER
90% IB1
0								,
								CE
								V
0	t1	t2	t3	t4	t5	t6	t7	t8
			t, TIME

Figure 11. Definition of Dynamic Saturation

Measurement

+15
1 μF	150 Ω	100 Ω	100 μF
			MTP8P10	MTP8P10
		MPF930		RB1
		MPF930
+10 V					A
+10 V	MPF930
	MPF930			RB2
			MUR105	RB2
50 Ω			MUR105
				MTP12N10
	500 μF		MJE210
	500 μF
	150 Ω		1 μF
	150 Ω
Voff
	A		T.U.T.	*IC
				*IC	R
			*IB		L
			*IB
				VCC
5
				IC = 5 A
4				TJ = 25°C
3			t = 1 μs
3
2
1	t = 2 μs
1
	MAXIMUM
0	TYPICAL
0		1	1.5	2
0	0.5	1	1.5	2	2.5

IB, BASE CURRENT (AMPS)

Figure 12. Dynamic Saturation Voltage

Motorola Bipolar Power Transistor Device Data

Источник: https://studfile.net/preview/16503825/

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