Документ: MJW16206, страницы 1-5 | База учебных материалов

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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SCANSWITCH

NPN Bipolar Power Deflection Transistors

For High and Very High Resolution CRT Monitors

The MJF16206 and the MJW16206 are state±of±the±art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors.

•1200 Volt VCES Breakdown Capability

•Typical Dynamic Desaturation Specified (New Turn±Off Characteristic)

•Maximum Repetitive Emitter±Base Avalanche Energy Specified (Industry First)

•High Current Capability: Performance Specified at 6.5 Amps

Continuous Rating Ð 12 Amps Max

Pulsed Rating Ð 15 Amps Max

•Isolated MJF16206 is UL Recognized

•Fast Switching: 100 ns Inductive Fall Time (Typ)

1000 ns Inductive Storage Time (Typ)

•Low Saturation Voltage

0.25Volts (Typ) at 6.5 Amps Collector Current

•High Emitter±Base Breakdown Capability For High Voltage Off Drive Circuits Ð

8.0V (Min)

MAXIMUM RATINGS

Rating		Symbol	Value	Unit

Collector±Emitter Breakdown Voltage		VCES	1200	Vdc
Collector±Emitter Sustaining Voltage		VCEO(sus)	500	Vdc
Emitter±Base Voltage		VEBO	8.0	Vdc
Isolation Voltage		VISOL	Ð	Vrms
(RMS for 1 sec., TA = 25_C,	Figure 19		Ð
Relative Humidity v 30%)	Figure 20		Ð

Collector Current Ð Continuous		IC	12	Adc
Collector Current Ð Pulsed (1)		ICM	15
Base Current Ð Continuous		IB	5.0	Adc
Base Current Ð Pulsed (1)		IBM	10
Repetitive Emitter±Base Avalanche Energy		W(BER)	0.2	mjoules
Total Power Dissipation @ TC = 25_C		PD	150	Watts
Total Power Dissipation @ TC = 100_C			39
Derated above 25_C			1.49	_
				W/ C
Operating and Storage Temperature		TJ, Tstg	± 55 to +150	_C

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance Ð Junction to Case	RqJC	0.67	_C/W
Lead Temperature for Soldering Purposes 1/8″	TL	260	_C
from the Case for 5 seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.

MJW16206

POWER TRANSISTORS

12 AMPERES

1200 VOLTS Ð VCES

50 and 150 WATTS

CASE 340F±02

TO±247AE

SCANSWITCH is a trademark of Motorola Inc.

REV 2

Motorola, Inc. 1995

MJW16206

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS (1)

Collector Cutoff Current	ICES				mAdc
(VCE = 1200 Vdc, VBE = 0 V)		Ð	Ð	250
(VCE = 850 Vdc, VBE = 0 V)		Ð	Ð	25
Emitter±Base Leakage	IEBO				mAdc
(VEB = 8.0 Vdc, IC = 0)		Ð	Ð	25
Collector±Emitter Sustaining Voltage (Figure 10)	VCEO(sus)				Vdc
(IC = 10 mAdc, IB = 0)		500	Ð	Ð
Emitter±Base Breakdown Voltage	V(BR)EBO				Vdc
(IE = 1.0 mA, IC = 0)		8.0	11	Ð
ON CHARACTERISTICS (1)

Collector±Emitter Saturation Voltage	VCE(sat)				Vdc
(IC = 3.0 Adc, IB = 400 mAdc)		Ð	0.15	1.0
(IC = 6.5 Adc, IB = 1.5 Adc)		Ð	0.25	1.0
Base±Emitter Saturation Voltage	VBE(sat)				Vdc
(IC = 6.5 Adc, IB = 1.5 Adc)		Ð	0.9	1.5
DC Current Gain	hFE				Ð
(IC = 1.0 Adc, VCE = 5.0 Vdc)		Ð	24	Ð
(IC = 10 Adc, VCE = 5.0 Vdc)		5.0	8.0	13
(IC = 12 Adc, VCE = 5.0 Vdc)		3.0	6.0	Ð
DYNAMIC CHARACTERISTICS

Dynamic Desaturation Interval (Figure 15)	tds	Ð	250	Ð	ns
(IC = 6.5 Adc, IB = 1.5 Adc, LB = 0.5 mH)
Emitter±Base Avalanche Turn±off Energy (Figure 15)	EB(off)	Ð	30	Ð	mjoules
(t = 500 ns, RBE = 22 W)
Output Capacitance	Cob	Ð	180	350	pF
(VCE = 10 Vdc, IE = 0, ftest = 100 kHz)
Gain Bandwidth Product	fT	Ð	3.0	Ð	MHz
(VCE = 10 Vdc, IC = 0.5 A, ftest = 1.0 MHz)
Collector±Heatsink Capacitance Ð MJF16206 Isolated Package	Cc±hs	Ð	17	Ð	pF
(Mounted on a 1″ x 2″ x 1/16″ Copper Heatsink,
VCE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS

Inductive Load (Figure 15) (IC = 6.5 A, IB = 1.5 A)					ns
Storage	tsv	Ð	1000	2250
Fall Time	tfi	Ð	100	250

(1) Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.

2	Motorola Bipolar Power Transistor Device Data

	100
	70
	50	TJ = 100°C
GAIN		TJ = 100°C
	30
	20		25°C
CURRENT	20		25°C
	10		± 55°C
	10
	7
, DC	7
, DC	5
FE	3
h		VCE = 5 V
		VCE = 5 V
	2
	1				1		3	5	7
	0.2	0.3	0.5	0.7	1	2	3	5	7	10	20

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical DC Current Gain

(VOLTS)	7
	5							TJ = 25°C
								TJ = 25°C
VOLTAGE	3							8 A
	2							8 A
	2
	IC = 2 A		4 A		6.5 A			10 A
,COLLECTOR±EMITTER	1
	0.7
	0.5
	0.3
	0.2
	0.1
CE	0.1
CE	0.07
V	0.07		0.2	0.3	0.5	0.7	1		3	5
	0.05 0.07	0.1	0.2	0.3	0.5	0.7	1	2	3	5
			IB, BASE CURRENT (AMPS)

Figure 3. Typical Collector Saturation Region

	10K
	7K
	5K
	5K
	3K										C	ib
(pF)	2K
	2K
	1K


CAPACITANCE	700
	700
	100														Cob
	500
	300
	200
	70



C,			TC =	25	°C
	50		TC =	25	°C
			f = 1	MHz

	30
	30
	20
	20
	10
	10
	0.1	0.2 0.3 0.5				1	2	3	5	7 10	20 30		50	100 200300500		1K

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Typical Capacitance

									MJW16206
(VOLTS)	5
	3		TJ = 25°C
	2		TJ = 100°C
VOLTAGE	2		TJ = 100°C
	1
	0.7
,COLLECTOR±EMITTER	0.7
	0.5
	0.3		IC/IB1 = 10
	0.2		IC/IB1 = 10
	0.2
						10		5
	0.1
	0.07
CE	0.07
CE	0.05
V	0.05	0.3	0.5	0.7	1	2	3	5	7	10	20
	0.2	0.3	0.5	0.7	1	2	3	5	7	10	20
				IC, COLLECTOR CURRENT (AMPS)

Figure 2. Typical Collector±Emitter

Saturation Voltage

	10
(VOLTS)	7
	5
	3
VOLTAGE	3						IC/IB1	= 5 to 10
	2						IC/IB1	= 5 to 10
	2

BASE±EMITTER	1
	0.7
	0.5
	0.3								TJ = 25°C
,	0.2								TJ = 100°C
BE	0.2								TJ = 100°C
V
	0.1	0.3	0.5	0.7	1	2	3	5	7	10	20
	0.2	0.3	0.5	0.7	1	2	3	5	7	10	20
				IC, COLLECTOR CURRENT (AMPS)

Figure 4. Typical Base±Emitter

Saturation Voltage

	10
(MHz)	7
	5
	3
FREQUENCY	3
	2
	1
,TRANSITION	1
	0.7
	0.5	f(test) = 1 MHz
		f(test) = 1 MHz
	0.3	TC = 25°C
	0.2	VCE = 10 V
T		VCE = 10 V
f
	0.1	0.2		0.5		1		3
	0.1	0.2	0.3	0.5	0.7	1	2	3	5	7	10

IC, COLLECTOR CURRENT (AMPS)

Figure 6. Typical Transition Frequency

Motorola Bipolar Power Transistor Device Data

3

MJW16206

SAFE OPERATING AREA INFORMATION

	30													20
	20													20
	20
(AMPS)	10					MJW16206				10 μs			(AMPS)	16					IC/IB1 ≥ 5
	5													16					IC/IB1 ≥ 5
	5							dc		5 ms									TJ ≤ 100°C
CURRENT	3							dc		5 ms			CURRENT						TJ ≤ 100°C
	2										100			12
											100			12
	1										ns
	1
, COLLECTOR	0.5			WIREBOND LIMIT							II*		, COLLECTOR	8
	0.3										II*							VBE(off) = 5 V


	0.2			THERMAL LIMIT
	0.1			SECONDARY BREAKDOWN										4		0 V
	0.1			LIMIT
				LIMIT
C	0.05												C						2 V
I													I

	0.03													0
	0.02	2	3	5	10	20	30	50	100	200 300	500	1K		0	200	400	600	800	1K	1.2K
	1	2	3	5	10	20	30	50	100	200 300	500	1K		0	200	400	600	800	1K	1.2K

	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)	VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
	*REGION II Ð EXPANDED FBSOA USING	Figure 8. Maximum Reverse Bias
	MUR8100E, ULTRAFAST RECTIFIER (SEE FIGURE 12)	Figure 8. Maximum Reverse Bias
	MUR8100E, ULTRAFAST RECTIFIER (SEE FIGURE 12)	Safe Operating Area
		Safe Operating Area

Figure 7. Maximum Forward Biased

Safe Operating Area

FORWARD BIAS

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 7 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9.

At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

REVERSE BIAS

Inductive loads, in most cases, require the emitter±to± base junction be reversed biased because high voltage and high current must be sustained simultaneously during turn± off. Under these conditions, the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as

	100
	100
	90
	90
(%)	80
	80			SECOND	BREAKDOWN


FACTOR	70				DERATING
	70
	60
RATING	60
RATING	40		DERATING
	50
			THERMAL
POWER	20
	30
	30
	10


	0
	25	50	75	100		125	150

TC, CASE TEMPERATURE (°C)

Figure 9. Power Derating

active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltage±current condition allowable during reverse biased turn±off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the RBSOA characteristics.

4	Motorola Bipolar Power Transistor Device Data

MJW16206

0.02 μF

+ V ≈ 11 V

100

H.P. 214

IC(pk)

OR EQUIV.

2N6191

T1

+ V

P.G.

20

IC

+

0 V

10 μF

± V

*IC

0

±

RB1

VCE(pk)

L

≈ ± 35 V

A

T.U.T.

MR856

VCE

μ

RB2

*IB

V

0.02

F

50

CC

IB1

Vclamp

50

+

±

2N5337

IB

1 μF

RBSOA

500

V(BR)CEO

Lcoil (ICpk)

IB2

L = 200 μH

100

L = 10 mH

T1 [

VCC

RB2 = 0

± V

RB2 = ∞

T1 adjusted to obtain IC(pk)

V

CC

= 20 Volts

V

= 20 Volts

CC

RB1 selected for desired IB1

*Tektronix P±6042 or Equivalent

Note: Adjust ±V to obtain desired VBE(off) at Point A.

Figure 10. RBSOA/V(BR)CEO(sus) Test Circuit

		1
		0.5	D = 0.5
	RESISTANCE(NORMALIZED)	0.5
r(t), TRANSIENT THERMAL		0.2	0.2
		0.2
		0.1	0.1		RθJC(t) = r(t) RθJC	P(pk)
		0.1			RθJC(t) = r(t) RθJC	P(pk)
		0.05			RθJC = 0.67°C/W MAX
		0.05			D CURVES APPLY FOR POWER
			SINGLE PULSE		PULSE TRAIN SHOWN	t1
					READ TIME AT t1	t
					TJ(pk) ± TC = P(pk) RθJC(t)	2
					TJ(pk) ± TC = P(pk) RθJC(t)	DUTY CYCLE, D = t1/t2
						DUTY CYCLE, D = t1/t2
		0.01			100	1K	10K
		0.1	1	10	100	1K	10K

t, TIME (ms)

Figure 11. Thermal Response

			VCE (1000 V MAX)
			10 μF	MUR8100
+15
1 μF		100 μF		10 mH
				10 mH
		100 Ω	MTP8P10
		100 Ω
	150 Ω	RB1
		RB1	MUR1100
		MTP8P10	MUR1100
		MPF930
+10		MPF930	MUR105
+10		MPF930		T.U.T.
50 Ω		MUR105	RB2
50 Ω			MTP12N10
			MTP12N10
	500 μF	MJE210
	500 μF		1 μF
		150 Ω	1 μF
VOff

Note: Test Circuit for Ultrafast FBSOA

Note: RB2 = 0 and VOff = ± 5 Volts

Figure 12. Switching Safe Operating Area

Motorola Bipolar Power Transistor Device Data

5

Материал: MJW16206

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