Материал: TIP47REV
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by TIP47/D
High Voltage NPN Silicon
Power Transistors
. . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications.
•250 V to 400 V (Min) Ð V CEO(sus)
•1 A Rated Collector Current
•Popular TO±220 Plastic Package
MAXIMUM RATINGS
Rating |
Symbol |
TIP47 |
TIP48 |
|
TIP49 |
TIP50 |
Unit |
|
|
|
|
|
|
|
|
Collector±Emitter Voltage |
VCEO |
250 |
300 |
|
350 |
400 |
Vdc |
Collector±Base Voltage |
VCB |
350 |
400 |
|
450 |
500 |
Vdc |
Emitter±Base Voltage |
VEB |
|
|
5.0 |
|
Vdc |
|
Collector Current Ð Continuous |
IC |
|
|
1.0 |
|
Adc |
|
Peak |
|
|
|
2.0 |
|
|
|
|
|
|
|
|
|
|
|
Base Current |
IB |
|
|
0.6 |
|
Adc |
|
Total Power Dissipation |
PD |
|
|
|
|
|
|
@ TC = 25_C |
|
|
|
40 |
|
Watts |
|
Derate above 25_C |
|
|
0.32 |
|
W/_C |
||
|
|
|
|
|
|
|
|
Total Power Dissipation |
PD |
|
|
|
|
|
|
@ TA = 25_C |
|
|
|
2.0 |
|
Watts |
|
Derate above 25_C |
|
|
0.016 |
|
W/_C |
||
|
|
|
|
|
|
|
|
Unclamped Inducting Load |
E |
|
|
20 |
|
mJ |
|
Energy (See Figure 8) |
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Operating and Storage Junction |
TJ, Tstg |
|
± 65 to +150 |
|
_C |
||
Temperature Range |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL CHARACTERISTICS
Characteristic |
Symbol |
Max |
Unit |
|
|
|
|
Thermal Resistance, Junction to Case |
RθJC |
3.125 |
_C/W |
Thermal Resistance, Junction to Ambient |
RθJA |
62.5 |
_C/W |
TIP47*
TIP49*
TIP48*
TIP50*
*Motorola Preferred Device
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250 ± 300 ± 350 ± 400 VOLTS
40 WATTS
CASE 221A±06
TO±220AB
|
TA |
TC |
|
|
|
|
|
|
|
|
|
4 |
40 |
|
|
|
|
|
|
|
|
(WATTS) |
3 |
30 |
|
|
|
TC |
|
|
|
|
|
|
|
|
|
|
|
|
|
||
DISSIPATION |
2 |
20 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
, POWER |
1 |
10 |
|
|
|
TA |
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
D |
|
|
|
|
|
|
|
|
|
|
P |
|
|
|
|
|
|
|
|
|
|
|
0 |
0 |
|
|
|
|
|
|
|
|
|
|
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
|
|
|
|
|
TC, CASE TEMPERATURE (°C) |
|
|
|||
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1995
TIP47 TIP49 TIP48 TIP50
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic |
|
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Collector±Emitter Sustaining Voltage (1) |
TIP47 |
VCEO(sus) |
250 |
Ð |
Vdc |
(IC = 30 mAdc, IB = 0) |
TIP48 |
|
300 |
Ð |
|
|
TIP49 |
|
350 |
Ð |
|
|
TIP50 |
|
400 |
Ð |
|
|
|
|
|
|
|
Collector Cutoff Current |
|
ICEO |
|
|
mAdc |
|
|
|
|||
(VCE = 150 Vdc, IB = 0) |
TIP47 |
|
Ð |
1.0 |
|
(VCE = 200 Vdc, IB = 0) |
TIP48 |
|
Ð |
1.0 |
|
(VCE = 250 Vdc, IB = 0) |
TIP49 |
|
Ð |
1.0 |
|
(VCE = 300 Vdc, IB = 0) |
TIP50 |
|
Ð |
1.0 |
|
Collector Cutoff Current |
|
ICES |
|
|
mAdc |
(VCE = 350 Vdc, VBE = 0) |
TIP47 |
|
Ð |
1.0 |
|
(VCE = 400 Vdc, VBE = 0) |
TIP48 |
|
Ð |
1.0 |
|
(VCE = 450 Vdc, VBE = 0) |
TIP49 |
|
Ð |
1.0 |
|
(VCE = 500 Vdc, VBE = 0) |
TIP50 |
|
Ð |
1.0 |
|
Emitter Cutoff Current |
|
IEBO |
Ð |
1.0 |
mAdc |
(VBE = 5.0 Vdc, IC = 0) |
|
|
|
|
|
ON CHARACTERISTICS (1) |
|
|
|
|
|
|
|
|
|
|
|
DC Current Gain |
|
hFE |
|
|
Ð |
(IC = 0.3 Adc, VCE = 10 Vdc) |
|
|
30 |
150 |
|
(IC = 1.0 Adc, VCE = 10 Vdc) |
|
|
10 |
Ð |
|
Collector±Emitter Saturation Voltage |
|
VCE(sat) |
Ð |
1.0 |
Vdc |
|
|||||
(IC = 1.0 Adc, IB = 0.2 Adc) |
|
|
|
|
|
Base±Emitter On Voltage |
|
VBE(on) |
Ð |
1.5 |
Vdc |
(IC = 1.0 Adc, VCE = 10 Vdc) |
|
|
|
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
Current±Gain Ð Bandwidth Product |
|
fT |
10 |
Ð |
MHz |
(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz) |
|
|
|
|
|
Small±Signal Current Gain |
|
hfe |
25 |
Ð |
Ð |
|
|||||
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) |
|
|
|
|
|
(1) Pulse Test: Pulse width v 300 μs, Duty Cycle v 2.0%. |
|
|
|
|
|
TURN±ON PULSE |
|
APPROX |
VCC |
+11 V |
RC |
Vin 0 |
V |
|
SCOPE |
VEB(off) |
in |
R |
|
|
|
||
t1 |
|
B |
|
|
|
|
|
t3 |
C |
<< C |
eb |
APPROX |
jd |
|
|
|
|
|
|
+11 V |
t1 ≤ 7.0 ns |
± 4.0 V |
|
|
|||
|
|
|
|
Vin |
100 < t2 < 500 μs |
|
|
|
t3 < 15 ns |
|
|
t2 |
DUTY CYCLE ≈ 2.0% |
|
|
APPROX ±9.0 V |
|
|
|
|
|
|
|
TURN±OFF PULSE |
|
|
|
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
|
1.0 |
|
|
|
|
|
|
|
0.5 |
|
|
|
|
TJ = 25°C |
|
|
|
|
|
|
VCC = 200 V |
|
|
|
|
|
|
tr |
|
IC/IB = 5.0 |
|
|
0.2 |
|
|
|
|
|
|
μs) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
( |
|
|
|
|
|
|
|
TIME |
0.1 |
|
|
td |
|
|
|
|
|
|
|
|
|
||
t, |
0.05 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.02 |
|
|
|
|
|
|
|
0.01 |
|
|
0.2 |
|
|
|
|
0.02 |
0.05 |
0.1 |
0.5 |
1.0 |
2.0 |
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn±On Time
2 |
Motorola Bipolar Power Transistor Device Data |
|
|
|
|
|
|
|
|
|
|
|
|
|
TIP47 |
TIP49 |
TIP48 |
TIP50 |
|
(NORMALIZED) |
1.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.7 |
D = 0.5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
RESISTANCE |
0.3 |
0.2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
0.1 |
|
|
|
|
|
|
|
|
|
|
P(pk) |
|
|
|
||
0.1 |
|
|
|
|
|
|
|
Z |
|
= r(t) R |
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
THERMAL |
0.07 |
0.05 |
|
|
|
|
|
|
|
θJC(t) |
°θJC |
|
|
|
|
|
|
0.05 |
|
|
|
|
|
|
|
RθJC = 3.125 C/W MAX |
|
|
|
|
|
||||
0.02 |
|
|
|
|
|
|
D CURVES APPLY FOR POWER |
|
|
|
|
||||||
|
|
|
|
|
|
|
PULSE TRAIN SHOWN |
|
|
t1 |
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
||||||
TRANSIENT |
0.03 |
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
READ TIME AT t1 |
|
|
|
|
|
|||||
0.02 |
0.01 |
|
|
|
|
|
|
|
|
|
t2 |
|
|
||||
|
|
|
|
|
|
TJ(pk) ± TC = P(pk) ZθJC(t) |
DUTY CYCLE, D = t1/t2 |
|
|||||||||
|
SINGLE PULSE |
|
|
|
|
|
|||||||||||
0.01 |
|
|
|
|
|
|
|
|
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
r(t), |
|
|
1.0 |
|
|
1.0 |
|
|
|
|
|
|
100 |
|
|
1.0 k |
|
0.01 |
0.02 |
0.05 |
0.2 |
0.5 |
2.0 |
|
5.0 |
10 |
20 |
50 |
200 |
500 |
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
t, TIME (ms)
Figure 4. Thermal Response
|
5.0 |
TC ≤ 25°C |
|
|
|
|
|
(AMPS) |
|
|
|
|
|
|
|
2.0 |
|
|
|
|
|
100 μs |
|
|
|
|
|
|
|
||
1.0 |
|
|
|
|
|
|
|
CURRENT |
0.5 |
|
|
|
1.0 ms |
|
|
|
|
dc |
|
|
500 μs |
||
|
|
|
|
|
|||
0.2 |
|
|
|
|
|
|
|
, COLLECTOR |
SECONDARY BREAKDOWN LIMITED |
|
|
||||
0.1 |
|
|
|||||
|
|
° |
|
|
|
||
|
THERMALLY LIMITED @ 25 C |
|
|
|
|||
0.05 |
BONDING WIRE LIMITED |
|
|
|
|||
|
|
|
TIP47 |
|
|
||
|
|
|
|
|
|
||
C |
|
CURVES APPLY |
|
TIP48 |
|
|
|
I |
0.02 |
|
|
|
|||
|
BELOW RATED VCEO |
|
TIP49 |
|
|
||
|
|
|
TIP50 |
|
|
||
|
|
|
|
|
|
|
|
|
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC ± VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) v 150 _C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the limitations imposed by second breakdown.
|
5.0 |
|
|
|
|
|
|
|
|
|
|
ts |
|
|
|
|
2.0 |
|
|
|
|
|
|
( μs) |
1.0 |
|
|
|
|
|
|
|
|
|
|
|
TJ = 25°C |
|
|
TIME |
0.5 |
|
|
|
|
VCC = 200 V |
|
|
|
|
|
|
IC/IB = 5.0 |
|
|
t, |
|
|
|
tf |
|
|
|
|
0.2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
0.05 |
|
|
|
|
1.0 |
2.0 |
|
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn±Off Time
(mV/°C) |
+ 4.5 |
|
|
|
|
|
|
|
|
+ 3.5 |
*APPLIES FOR IC/IB ≤ hFE/5 |
|
|
|
|||||
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
COEFFICIENTS |
+ 2.5 |
|
|
|
|
|
|
|
|
+ 1.5 |
|
|
|
|
|
|
|
|
|
+ 0.5 |
|
|
|
|
|
+ 25°C to + 150°C |
|
|
|
TEMPERATURE |
θVC FOR VCE(sat) |
|
|
|
|
||||
0 |
|
|
|
|
|
± 55°C to +25°C |
|
||
± 0.5 |
|
|
|
|
|
|
|||
|
|
|
|
|
+ 25°C to +150°C |
|
|
||
|
|
|
|
|
|
|
|
||
± 1.5 |
θ |
VB |
FOR V |
|
|
|
|
||
, |
|
|
|
BE |
|
|
|
|
|
V |
|
|
|
|
|
|
± 55°C to +25°C |
|
|
θ |
± 2.5 |
|
|
|
|
|
|
||
|
|
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
||
|
0.02 |
|
|||||||
|
|
|
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
||
Figure 7. Temperature Coefficients
Motorola Bipolar Power Transistor Device Data |
3 |
TIP47 TIP49 TIP48 TIP50
VCE MONITOR |
tw ≈ 3 ms |
(SEE NOTE A) |
|
|
|
|
0 V |
|
|
|
|
|
INPUT |
|
|
|
|
|
VOLTAGE |
|
MJE171 |
RBB1 = |
TUT |
100 mH |
± 5 V |
|
150 Ω |
100 ms |
||||
|
|||||
50 |
|
|
VCC = 20 V |
0.63 A |
|
|
|
COLLECTOR |
|||
INPUT |
|
|
IC MONITOR |
CURRENT |
|
|
RBB2 = |
|
|||
50 |
|
|
0 V |
||
|
100 Ω |
RS |
= |
VCER |
|
VBB1 = 10 V |
VBB2 = |
|
|||
0 |
0.1 Ω |
COLLECTOR |
|||
|
|
|
|
VOLTAGE |
|
|
|
|
|
10 V |
|
|
|
|
|
VCE(sat) |
|
Note A: Input pulse width is increased until ICM = 0.63 A.
Figure 8. Inductive Load Switching
|
200 |
|
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
VCE = 10 V |
|
|
|
TJ = 150°C |
|
|
|
|
|
|
||
GAIN |
60 |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
||
40 |
|
25°C |
|
|
|
|
|
|
|
CURRENT |
|
|
|
|
|
|
|
||
20 |
|
± 55°C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
, DC |
10 |
|
|
|
|
|
|
|
|
FE |
|
|
|
|
|
|
|
|
|
h |
6.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4.0 |
|
|
|
|
|
|
|
|
|
2.0 |
|
|
|
|
0.4 |
0.6 |
1.0 |
|
|
0.02 |
0.04 |
0.06 |
0.1 |
0.2 |
2.0 |
|||
|
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
||||
Figure 9. DC Current Gain
|
1.4 |
|
|
|
|
|
|
|
|
|
1.2 |
|
|
|
|
|
|
|
|
(VOLTS) |
1.0 |
|
|
|
|
|
|
|
|
0.8 |
|
VBE(sat) @ IC/IB = 5.0 V |
|
|
|
|
|||
V, VOLTAGE |
0.6 |
|
|
VBE(on) @ VCE = 4 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
||
0.4 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.2 |
|
VCE(sat) @ IC/IB = 5.0 V |
|
|
|
|
||
|
0 |
0.04 |
0.06 |
0.1 |
0.2 |
0.4 |
0.6 |
1.0 |
2.0 |
|
0.02 |
||||||||
|
|
|
IC, COLLECTOR CURRENT (AMPS) |
|
|
||||
Figure 10. ªOnº Voltages
4 |
Motorola Bipolar Power Transistor Device Data |
TIP47 TIP49 TIP48 TIP50
PACKAGE DIMENSIONS
|
|
|
|
±T± |
|
B |
|
F |
C |
|
|
|
T |
S |
4 |
|
|
|
|
Q |
|
|
A |
|
1 |
2 |
3 |
U |
|
H |
|
|
|
|
Z |
|
|
K |
|
|
|
|
|
|
L |
|
|
|
R |
V |
|
|
|
J |
G |
|
|
|
|
|
|
|
D |
|
|
N |
|
|
|
SEATING PLANE
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.570 |
0.620 |
14.48 |
15.75 |
B |
0.380 |
0.405 |
9.66 |
10.28 |
C |
0.160 |
0.190 |
4.07 |
4.82 |
D |
0.025 |
0.035 |
0.64 |
0.88 |
F |
0.142 |
0.147 |
3.61 |
3.73 |
G |
0.095 |
0.105 |
2.42 |
2.66 |
H |
0.110 |
0.155 |
2.80 |
3.93 |
J |
0.018 |
0.025 |
0.46 |
0.64 |
K |
0.500 |
0.562 |
12.70 |
14.27 |
L |
0.045 |
0.060 |
1.15 |
1.52 |
N |
0.190 |
0.210 |
4.83 |
5.33 |
Q |
0.100 |
0.120 |
2.54 |
3.04 |
R |
0.080 |
0.110 |
2.04 |
2.79 |
S |
0.045 |
0.055 |
1.15 |
1.39 |
T |
0.235 |
0.255 |
5.97 |
6.47 |
U |
0.000 |
0.050 |
0.00 |
1.27 |
V |
0.045 |
±±± |
1.15 |
±±± |
Z |
±±± |
0.080 |
±±± |
2.04 |
STYLE 1:
PIN 1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
CASE 221A±06
TO±220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data |
5 |