Материал: mrf282rev1a
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF282/D
The RF Sub±Micron MOSFET Line |
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RF Power Field Effect TransistorsMRF282S |
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N±Channel Enhancement±Mode Lateral MOSFETs |
MRF282Z |
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Designed for class A and class AB PCN and PCS base station applications at |
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frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier |
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amplifier applications. |
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10 W, 2000 MHz, 26 V |
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• Specified Two±Tone Performance @ 2000 MHz, 26 Volts |
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LATERAL N±CHANNEL |
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Output Power = 10 Watts (PEP) |
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BROADBAND |
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Power Gain = 11 dB |
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RF POWER MOSFETs |
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Efficiency = 30% |
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Intermodulation Distortion = ±30 dBc |
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• Specified Single±Tone Performance @ 2000 MHz, 26 Volts |
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Output Power = 10 Watts (CW) |
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Power Gain = 11 dB |
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Efficiency = 40% |
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• Characterized with Series Equivalent Large±Signal |
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CASE 458±03, STYLE 1 |
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Impedance Parameters |
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(MRF282S) |
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• S±Parameter Characterization at High Bias Levels |
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• Excellent Thermal Stability |
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• Capable of Handling 10:1 VSWR, @ 26 Vdc, |
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2000 MHz, 10 Watts (CW) Output Power |
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CASE 458A±01, STYLE 1 |
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• Gold Metallization for Improved Reliability |
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(MRF282Z) |
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MAXIMUM RATINGS |
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Rating |
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Symbol |
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Value |
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Unit |
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Drain±Source Voltage |
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VDSS |
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65 |
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Vdc |
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Gate±Source Voltage |
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VGS |
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± 20 |
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Vdc |
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Total Device Dissipation @ TC = 25°C |
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PD |
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60 |
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Watts |
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Derate above 25°C |
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0.34 |
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W/°C |
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Storage Temperature Range |
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Tstg |
± 65 to +150 |
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°C |
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Operating Junction Temperature |
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TJ |
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200 |
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°C |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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2.9 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
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Unit |
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OFF CHARACTERISTICS |
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Drain±Source Breakdown Voltage |
V(BR)DSS |
65 |
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Ð |
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Vdc |
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(VGS = 0, ID = 10 μAdc) |
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Zero Gate Voltage Drain Current |
IDSS |
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Ð |
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1.0 |
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μAdc |
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(VDS = 28 Vdc, VGS = 0) |
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Gate±Source Leakage Current |
IGSS |
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Ð |
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1.0 |
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μAdc |
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(VGS = 20 Vdc, VDS = 0) |
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NOTE ± CAUTION ± MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
MRF282S MRF282Z |
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1 |
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
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Typ |
Max |
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Unit |
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ON CHARACTERISTICS |
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Gate Threshold Voltage |
VGS(th) |
2.0 |
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3.0 |
4.0 |
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Vdc |
(VDS = 10 Vdc, ID = 50 μAdc) |
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Drain±Source On±Voltage |
VDS(on) |
Ð |
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0.4 |
0.6 |
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Vdc |
(VGS = 10 Vdc, ID = 0.5 Adc) |
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Forward Transconductance |
gfs |
0.5 |
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0.7 |
Ð |
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S |
(VDS = 10 Vdc, ID = 0.5 Adc) |
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Gate Quiescent Voltage |
VGS(q) |
3.0 |
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4.0 |
5.0 |
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Vdc |
(VDS = 26 Vdc, ID = 75 mAdc) |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
Ciss |
Ð |
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15 |
Ð |
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pF |
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) |
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Output Capacitance |
Coss |
Ð |
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8.0 |
Ð |
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pF |
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) |
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Reverse Transfer Capacitance |
Crss |
Ð |
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0.45 |
Ð |
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pF |
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) |
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FUNCTIONAL TESTS (In Motorola Test Fixture) |
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Common±Source Power Gain |
Gps |
11 |
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12.6 |
Ð |
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dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Drain Efficiency |
η |
30 |
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34 |
Ð |
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% |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Intermodulation Distortion |
IMD |
Ð |
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±32.5 |
±30 |
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dBc |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Input Return Loss |
IRL |
10 |
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14 |
Ð |
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dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
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Common±Source Power Gain |
Gps |
11 |
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12.6 |
Ð |
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dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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Drain Efficiency |
η |
Ð |
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30 |
Ð |
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% |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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Intermodulation Distortion |
IMD |
Ð |
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±32.5 |
Ð |
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dBc |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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Input Return Loss |
IRL |
10 |
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14 |
Ð |
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dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
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f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
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Common±Source Power Gain |
Gps |
11 |
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12.3 |
Ð |
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dB |
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) |
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Drain Efficiency |
η |
40 |
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45 |
Ð |
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% |
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) |
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Output Mismatch Stress |
Ψ |
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(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, |
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No Degradation In Output Power |
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f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, |
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All Phase Angles at Frequency of Test) |
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MRF282S MRF282Z |
MOTOROLA RF DEVICE DATA |
2 |
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B4 |
B5 |
B6 |
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B1 |
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B2 |
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B3 |
C8 |
C10 |
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VGG |
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VDD |
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+ |
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+ |
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C1 |
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C3 |
R2 |
C5 |
R3 |
C9 |
C11 |
R4 |
C14 |
R5 |
C15 |
R6 |
C17 |
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R1 |
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L3 |
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L2 |
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Z7 |
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Z8 |
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Z9 |
Z10 |
RF |
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RF |
Z1 |
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Z2 |
Z3 |
Z4 |
Z5 |
Z6 |
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C13 |
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OUTPUT |
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C12 |
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C16 |
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INPUT |
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L4 |
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C6 |
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DUT |
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C2 |
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C4 |
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C7 |
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L1 |
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B1, B2, B3, |
Ferrite Bead, Ferroxcube, 56±590±65±3B |
R1, R2, R3, |
12 W, 0.2 W Chip Resistor, Rohm |
B4, B5, B6 |
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R4, R5, R6 |
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C1, C17 |
470 mF, Electrolytic Capacitor, Mallory |
Z1 |
0.155″ x 0.08″ Microstrip |
C2, C4, C12 |
0.6±4.5 pF, Variable Capacitor, Johanson |
Z2 |
0.280″ x 0.08″ Microstrip |
C3, C15 |
0.1 mF, Chip Capacitor, Kemet |
Z3 |
0.855″ x 0.08″ Microstrip |
C5, C14 |
1000 pF, B Case Chip Capacitor, ATC |
Z4 |
0.483″ x 0.08″ Microstrip |
C6, C8, C10, C13 |
12 pF, B Case Chip Capacitor, ATC |
Z5 |
0.200″ x 0.330″ Microstrip |
C7 |
1.8 pF, B Case Chip Capacitor, ATC |
Z6 |
0.220″ x 0.330″ Microstrip |
C9, C11 |
100 pF, B Case Chip Capacitor, ATC |
Z7 |
0.490″ x 0.330″ Microstrip |
C16 |
0.4±2.5 pF, Variable Capacitor, Johanson |
Z8 |
0.510″ x 0.08″ Microstrip |
L1 |
Straight Wire, 21 AWG, 0.3″ |
Z9 |
0.990″ x 0.08″ Microstrip |
L2 |
8 Turns, 0.042″ ID, 24 AWG, Enamel |
Z10 |
0.295″ x 0.08″ Microstrip |
L3 |
9 Turns, 0.046″ ID, 26 AWG, Enamel |
Board |
35 Mils Glass Teflon , Arlon GX±300, |
L4 |
3 Turns, 0.048″ ID, 25 AWG, Enamel |
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er = 2.55 |
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Input/Output Connectors Type N Flange Mount |
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Figure 1. Schematic of 1.93 ± 2.0 GHz Broadband Test Circuit
MOTOROLA RF DEVICE DATA |
MRF282S MRF282Z |
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3 |
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R1 |
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R2 |
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R3 |
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R4 |
R5 |
R6 |
DC |
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SUPPLY |
+ |
+ |
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+ |
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VGG |
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B1 |
C4 |
B2 |
C7 |
B3 |
C5 |
C8 |
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B5 |
B4 |
B6 + |
VDD |
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C1 |
C14 |
C11 |
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(BIAS) |
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C10 |
C13 |
C16 |
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± |
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± |
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L1 |
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L2 |
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L3 |
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L4 |
L5 |
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DUT |
Z8 |
Z9 |
Z10 |
Z11 |
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Z6 |
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RF |
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RF |
Z1 |
Z2 |
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Z3 |
Z4 |
C6 |
Z5 |
Z7 |
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OUTPUT |
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INPUT |
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C12 |
C15 |
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C17 |
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C2 |
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C3 |
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C9 |
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B1, B2, B3, |
Ferrite Bead, Fair Rite, (2743021446) |
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R1, R2, R3, |
12 W, 1/8 W Fixed Film Chip Resistor, |
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B4, B5, B6 |
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R4, R5, R6 |
0.08″ x 0.13″ |
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C1, C16 |
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470 mF, 63 V, Electrolytic Capacitor, Mallory |
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W1, W2 |
Berrylium Copper, 0.010″ x 0.110″ |
x 0.210″ |
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C2, C9, C12 |
0.6±4.5 pF, Variable Capacitor, Johanson Gigatrim |
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Z1 |
0.122″ x 0.08″ Microstrip |
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C3 |
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0.8±4.5 pF, Variable Capacitor, Johanson Gigatrim |
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Z2 |
0.650″ x 0.08″ Microstrip |
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C4, C13 |
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0.1 mF, Chip Capacitor |
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Z3 |
0.160″ x 0.08″ Microstrip |
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C5, C14 |
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100 pF, B Case Chip Capacitor, ATC |
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Z4 |
0.030″ x 0.08″ Microstrip |
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C6, C8, C11, C15 12 pF, B Case Chip Capacitor, ATC |
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Z5 |
0.045″ x 0.08″ Microstrip |
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C7, C10 |
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1000 pF, B Case Chip Capacitor, ATC |
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Z6 |
0.291″ x 0.08″ Microstrip |
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C17 |
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0.1 pF, B Case Chip Capacitor, ATC |
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Z7 |
0.483″ x 0.330″ Microstrip |
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L1 |
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3 Turns, 27 AWG, 0.087″ OD, 0.050″ |
ID, |
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Z8 |
0.414″ x 0.330″ Microstrip |
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0.053″ |
Long, 6.0 nH |
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Z9 |
0.392″ x 0.08″ Microstrip |
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L2 |
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5 Turns, 27 AWG, 0.087″ OD, 0.050″ |
ID, |
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Z10 |
0.070″ x 0.08″ Microstrip |
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0.091″ |
Long, 15 nH |
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Z11 |
1.110″ x 0.08″ Microstrip |
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L3, L4 |
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9 Turns, 26 AWG, 0.080″ OD, 0.046″ |
ID, |
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Board |
1 = 0.03 Glass Teflon |
, Arlon GX±0300±55±22, |
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0.170″ |
Long, 30.8 nH |
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2 oz Copper, 3 x 5″ Dimenson, 0.030″ , er = 2.55 |
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L5 |
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4 Turns, 27 AWG, 0.087″ OD, 0.050″ |
ID, |
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0.078″ |
Long, 10 nH |
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Figure 2. Schematic of 1.81 ± 1.88 GHz Broadband Test Circuit
MRF282S MRF282Z |
MOTOROLA RF DEVICE DATA |
4 |
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VGG |
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R1 |
R5 |
C1 |
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R2 |
Q1 |
VDD |
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R3 |
Q2 |
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R4 |
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B1 |
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B2 |
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B3 |
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R6 |
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C13 |
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VDD |
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R7 |
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C2 |
C4 |
C5 |
C6 |
R8 |
C8 |
C9 |
C14 |
R9 |
C16 |
R10 |
C18 |
C20 |
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L2 |
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L1 |
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DUT |
Z5 |
Z6 |
Z7 |
Z8 |
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Z9 |
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RF |
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RF |
Z1 |
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Z2 |
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Z3 |
Z4 |
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C17 |
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OUTPUT |
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C15 |
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C19 |
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INPUT |
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C7 |
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C11 |
C12 |
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C3 |
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C10 |
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B1, B2, B3, |
Ferrite Bead, Ferroxcube, 56±590±65±3B |
R2 |
1.0 kW, 1/2 W Potentiometer |
C1, C20 |
470 mF, 63 V, Electrolytic Capacitor, Mallory |
R3 |
13 kW, Axial, 1/4 W Resistor |
C2 |
0.01 mF, B Case Chip Capacitor, ATC |
R4, R6, R7 |
390 W, 1/8 W Chip Resistor, Rohm |
C3, C10, C15 |
0.6±4.5 pF, Variable Capacitor, Johanson |
R5 |
1.0 W, 10 W 1% Resistor, DALE |
C4, C16 |
0.02 mF, B Case Chip Capacitor, ATC |
R8, R9, R10 |
12 W, 1/8 W Chip Resistor, Rohm |
C5 |
100 mF, 50 V, Electrolytic Capacitor, Sprague |
Z1 |
0.624″ x 0.08″ Microstrip |
C6, C7, C9, |
12 pF, B Case Chip Capacitor, ATC |
Z2 |
0.725″ x 0.08″ Microstrip |
C14, C17 |
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Z3 |
0.455″ x 0.08″ Microstrip |
C8, C13 |
51 pF, B Case Chip Capacitor, ATC |
Z4 |
0.530″ x 0.330″ Microstrip |
C11, C12 |
0.3 pF, B Case Chip Capacitor, ATC |
Z5 |
0.280″ x 0.330″ Microstrip |
C18 |
0.1 mF, Chip Capacitor, Kemet |
Z6 |
0.212″ x 0.330″ Microstrip |
C19 |
0.4±2.5 pF, Variable Capacitor, Johanson |
Z7 |
0.408″ x 0.08″ Microstrip |
L1 |
8 Turns, 0.042″ ID, 24 AWG, Enamel |
Z8 |
0.990″ x 0.08″ Microstrip |
L2 |
9 Turns, 0.046″ ID, 26 AWG, Enamel |
Z9 |
0.295″ x 0.08″ Microstrip |
Q1 |
NPN, 15 W, Bipolar Transistor, MJD310 |
Board |
35 Mils Glass Teflon , Arlon GX±0300, er = 2.55 |
Q2 |
PNP, 15 W, Bipolar Transistor, MJD320 |
Input/Output |
Type N Flange Mount RF55±22, Connectors, |
R1 |
200 W, Axial, 1/4 W Resistor |
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Omni Spectra |
Figure 3. Schematic of Class A Test Circuit
MOTOROLA RF DEVICE DATA |
MRF282S MRF282Z |
|
5 |