Материал: mrf282rev1a

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Pout , OUTPUT POWER (WATTS)

			TYPICAL CHARACTERISTICS
16				14		14
14					(WATTS)POWER		0.8 W
			Gps	(dB)GAIN,	(WATTS)POWER	12	0.8 W
12			Pout	13		12
12				13
10						10		0.5 W
						10		0.5 W
8				12	OUTPUT
				G	OUTPUT	8
6				ps		8
6
4				11	,		Pin = 0.2 W
		VDD = 26 Vdc			out	6			V	DD		= 26 Vdc
2		IDQ = 75 mA			P				I	DD
2		IDQ = 75 mA							I		= 75 mA
		f = 2000 MHz Single Tone							DQ
0		f = 2000 MHz Single Tone		10		4			Single Tone
0				10		4
0.0	0.25	0.5	0.75	1.0		1800		1850	1900			1950	2000

Pin, INPUT POWER (WATTS)

Figure 4. Output Power & Power Gain

versus Input Power

(dBc)

± 10

VDD =

26 Vdc

DISTORTION

± 20

IDQ = 75 mA

= 2000.0 MHz

± 30

f2 = 2000.1 MHz

INTERMODULATION

± 40

3rd Order

± 50

5th Order

± 60

IMD,

7th Order

± 70

1.0

0.1

Pout, OUTPUT POWER (WATTS) PEP

Figure 6. Intermodulation Distortion

versus Output Power

(dBc)

± 10

VDD =

26 Vdc

DISTORTION

± 30

f1 = 2000.0 MHz

25 mA

INTERMODULATIONIMD,

± 20

= 2000.1 MHz

50 mA

± 40

100 mA

IDQ = 125 mA

± 50

75 mA

± 60

1.0

0.1

Pout, OUTPUT POWER (WATTS) PEP

Figure 8. Intermodulation Distortion

versus Output Power

f, FREQUENCY (MHz)

Figure 5. Output Power versus Frequency

	13															±15	(dBc)
	13													Gps		±15

(dB)	11															±25	DISTORTION
G	12															±20	INTERMODULATION
	12															±20
	9															±35
	9		IDQ = 75		mA											±35
GAIN ,
ps	10		Pout = 10		W (PEP)									IMD		±30
														IMD

																	IMD,
			f1 = 2000.0 MHz														IMD,
			f1 = 2000.0 MHz
	8		f2 = 2000.1 MHz													±40

			18				20	22	24	26
	16		18				20	22	24	26					28
						VDD, DRAIN SUPPLY VOLTAGE (Vdc)
			Figure 7. Power Gain and Intermodulation
				Distortion versus Supply Voltage
	14
			IDQ = 125 mA
	13
GAIN (dB)	13		100 mA
	12		75 mA
	12
POWER,	11		50 mA
			50 mA
ps
ps
G
	10		25 mA							VDD	=	26	Vdc
										f1 =	2000.0			MHz
										f2 =	2000.1			MHz
	9
	9	0.1						1.0		10
		0.1						1.0		10

Pout, OUTPUT POWER (WATTS) PEP

Figure 9. Power Gain versus Output Power

MRF282S MRF282Z	MOTOROLA RF DEVICE DATA
6

	2									100
CURRENTDRAIN(Adc)	1.5					Tflange = 75°C							Ciss
	1.5								CAPACITANCE(pF)				Ciss
										10			Coss
					Tflange = 100°C

	1
	1
D	.5								C,	1.0
D	.5								C,
,													Crss
I			TJ = 175°C										Crss
			TJ = 175°C
	0									0.1
	0	4	8	12	16	20	24	28		0	4	8	12	16	20	24	28
			VDD, DRAIN SUPPLY VOLTAGE (Vdc)									VDS, DRAIN SOURCE VOLTAGE (VOLTS)

Figure 10. Class A DC Safe Operating Area

Figure 11. Capacitance versus

Drain Source Voltage

	60				14	Pout = 10 W (PEP)	39	(%)
	50					Pout = 10 W (PEP)	Gps	EFFICIENCYCOLLECTOR
(dBm)POWEROUTPUT			TOI POINT	G		VDD = 26 Vdc	Gps
(dBm)POWEROUTPUT			TOI POINT	G		VDD = 26 Vdc
	40	FUNDAMENTAL			13	IDQ = 75 mA	38
		FUNDAMENTAL
	30
	30			(dB)
	20			(dB)
	10	3rd Order		GAIN,	12		37
	10				12		37
	0			ps			η
,	±10		VDD = 26 Vdc				η
,	±10		VDD = 26 Vdc					VSWR
P								VSWR
out	± 20		ID = 600 mAdc		11		36
	± 30		f1 = 2000.0 MHz				VSWR	INPUT
			f2 = 2000.1 MHz					INPUT

							35
	± 40				10		35

10	20	30	40	1930		1940	1950		1960	1970	1980	1990	2000
	Pin, INPUT POWER (dBm)							f, FREQUENCY MHz)
Figure 12. Class A Third Order Intercept Point					Figure 13. Performance in Broadband Circuit
	)	1.E+09
		1.E+09

	2	1.E+08
	x AMPS

		1.E+07
	(HOURS

		1.E+06
	FACTOR	1.E+06
		1.E+05
		1.E+05
	MTBF	1.E+04
		1.E+04
		1.E+03
		1.E+03	50	100		150	200			250
		0	50	100		150	200			250

TJ, JUNCTION TEMPERATURE (°C)

1.6:1

1.4:1

1.2:1

	This graph displays calculated MTBF in hours x ampere2 drain cur-
	ent. Life tests at elevated temperature have correlated to better than
	±10% of the theoretical prediction for metal failure. Divide MTBF
	factor by ID2 for MTBF in a particular application.
	Figure 14. MTBF Factor versus
	Junction Temperature

MOTOROLA RF DEVICE DATA	MRF282S MRF282Z
	7

				+ j1
	+ j0.5						+ j2
							+ j3
	+ j0.2	Zin		Zo = 5	Ω		+ j5
	+ j0.2	2 GHz		Zo = 5


			ZOL*				+ j10
		f = 1.8 GHz	ZOL*
		f = 1.8 GHz	2 GHz
			2 GHz
0.0	0.2	0.5	1		2	3	5
0.0			1		2	3	5

1.8 GHz

		± j10
± j0.2		± j5
± j0.2
		± j3
	± j0.5	± j2
	± j0.5
		± j1

VCC = 26 V, ICQ = 75 mA, Pout = 10 W (PEP)

f	Zin(1)		ZOL*
MHz	Ω		Ω

1800	2.1	+ j1.0	3.8 ± j0.15

1860	2.05	+ j1.15	3.77 ± j0.13

1900	2.0	+ j1.2	3.75 ± j0.1

1960	1.9	+ j1.4	3.65 + j0.1

2000	1.85 + j1.6		3.55 + j0.2

Zin(1)= Conjugate of fixture gate terminal impedance.

ZOL* = Conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency.

Figure 15. Series Equivalent Input and Output Impedence

MRF282S MRF282Z	MOTOROLA RF DEVICE DATA
8

Table 1. Common Source S±Parameters at VDS = 24 Vdc, ID = 600 mAdc

f		S11		S21			S12			S22
GHz	\|S11\|		f	\|S21\|	f	\|S12\|		f	\|S22\|		f
	\|S11\|		f	\|S21\|	f	\|S12\|		f	\|S22\|		f
0.1	0.916		-81	33.41	128	0.016		41	0.498		-60

0.2	0.850		-118	20.81	101	0.020		16	0.499		-88

0.3	0.843		-135	14.45	84	0.020		2	0.532		-106

0.4	0.848		-144	10.61	73	0.019		-7	0.552		-117

0.5	0.861		-151	8.34	63	0.017		-15	0.609		-125

0.6	0.872		-154	6.61	55	0.015		-19	0.647		-132

0.7	0.882		-158	5.43	47	0.013		-23	0.675		-139

0.8	0.895		-160	4.54	41	0.011		-24	0.728		-145

0.9	0.901		-163	3.82	34	0.009		-24	0.740		-150

1.0	0.902		-164	3.27	29	0.008		-18	0.773		-160

1.1	0.909		-166	2.83	24	0.006		-6	0.794		-164

1.2	0.917		-168	2.48	19	0.006		10	0.813		-168

1.3	0.923		-169	2.18	14	0.006		14	0.826		-172

1.4	0.931		-171	1.94	10	0.006		15	0.842		-176

1.5	0.933		-172	1.73	6	0.005		43	0.853		-179

1.6	0.934		-174	1.55	2	0.007		60	0.859		177

1.7	0.937		-175	1.40	-1	0.009		60	0.869		174

1.8	0.938		-176	1.27	-4	0.010		63	0.869		171

1.9	0.942		-177	1.16	-7	0.011		71	0.874		169

2.0	0.943		-178	1.06	-10	0.014		73	0.876		166

2.1	0.946		-178	0.98	-12	0.016		71	0.884		163

2.2	0.950		-179	0.92	-15	0.019		67	0.897		160

2.3	0.953		-180	0.86	-18	0.019		63	0.903		157

2.4	0.954		179	0.80	-21	0.020		62	0.907		154

2.5	0.955		178	0.76	-24	0.020		65	0.907		151

2.6	0.961		177	0.71	-26	0.024		69	0.912		149

MOTOROLA RF DEVICE DATA	MRF282S MRF282Z
	9

PACKAGE DIMENSIONS

U 4 PL

		3
W 4 PL	B	P
W 4 PL
V 4 PL	K 2 PL
	2
	D 2 PL
E
	C
H	J
H	N
	N
		CASE 458±03
		ISSUE C
		(MRF282S)

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.197	0.203	5.00	5.16
B	0.157	0.163	3.99	4.14
C	0.085	0.110	2.16	2.79
D	0.047	0.053	1.19	1.35
E	0.006	0.010	0.15	0.25
H	0.025	0.031	0.64	0.79
J	0.006	0.010	0.15	0.25
K	0.060	0.100	1.52	2.54
N	0.177	0.183	4.50	4.65
P	0.137	0.143	3.48	3.63
U	0.000	0.005	0.00	0.13
V	0.030	0.040	0.76	1.02
W	0.017	0.023	0.43	0.58

STYLE 1:

PIN 1. DRAIN

2.GATE

3.SOURCE

U 4 PL

W 4 PL

1	S
	Y
	3
B	P

V 4 PL	K 2 PL
V 4 PL	2
	D 2 PL
E	C
	H
	N

CASE 458A±01

ISSUE O (MRF282Z)

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.DIMENSION ±H± (PACKAGE COPLANARITY): THE BOTTOM OF THE LEADS AND REFERENCE PLANE ±T± MUST BE COPLANAR WITHIN DIMENSION ±H±.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.197	0.203	5.00	5.16
B	0.157	0.163	3.99	4.14
C	0.085	0.110	2.16	2.79
D	0.047	0.053	1.19	1.35
E	0.006	0.010	0.15	0.25
H	0.000	0.004	0.00	0.10
J	0.006	0.010	0.15	0.25
K	0.050	0.080	1.27	2.03
N	0.177	0.183	4.50	4.65
P	0.137	0.143	3.48	3.63
S	0.020	0.040	0.51	1.02
U	0.000	0.005	0.00	0.13
V	0.030	0.040	0.76	1.02
W	0.017	0.023	0.43	0.58
Y	0.030	0.040	0.76	1.02

STYLE 1:

PIN 1. DRAIN

2.GATE

3.SOURCE

MRF282S MRF282Z	MOTOROLA RF DEVICE DATA
10

Источник: https://studfile.net/preview/16503520/

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