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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF5015/D

The RF MOSFET Line
RF Power Field Effect Transistor
N±Channel Enhancement±Mode	MRF5015
Designed for broadband commercial and industrial applications at frequen-
cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large±signal, common source amplifier applications in 12.5

volt mobile, and base station FM equipment.
volt mobile, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 12.5 Volts	15 W, 512 MHz, 12.5 VOLTS
Output Power Ð 15 Watts	15 W, 512 MHz, 12.5 VOLTS
Output Power Ð 15 Watts	N±CHANNEL BROADBAND
Power Gain Ð 10 dB Min	N±CHANNEL BROADBAND
Power Gain Ð 10 dB Min		RF POWER FET
Efficiency Ð 50% Min		RF POWER FET
Efficiency Ð 50% Min
• Characterized with Series Equivalent Large±Signal Impedance Parameters

• S±Parameter Characterization at High Bias Levels
• S±Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

CASE 319±07, STYLE 3

MAXIMUM RATINGS

Rating		Symbol		Value		Unit

Drain±Source Voltage		VDSS		36		Vdc
Drain±Gate Voltage (RGS = 1 MΩ)		VDGR		36		Vdc
Gate±Source Voltage		VGS		± 20		Vdc
Drain Current Ð Continuous		ID		6		Adc
Total Device Dissipation @ TC = 25°C		PD		50		Watts
Derate above 25°C				0.29		W/°C

Storage Temperature Range		Tstg	± 65 to +150			°C
Operating Junction Temperature		TJ		200		°C
THERMAL CHARACTERISTICS

Characteristic		Symbol		Max		Unit

Thermal Resistance, Junction to Case		RθJC		3.5		°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic	Symbol	Min	Typ		Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage (VGS = 0, ID = 5 mAdc)	V(BR)DSS	36	Ð		Ð	Vdc
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0)	IDSS	Ð	Ð		5	mAdc
Gate±Source Leakage Current (VGS = 20 Vdc, VDS = 0)	IGSS	Ð	Ð		2	μAdc

(continued)

NOTE ± CAUTION ± MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 6

MOTOROLAMotorola, Inc. 1994RF DEVICE DATA

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(th)

1.25

2.3

3.5

Vdc

(VDS = 10 Vdc, ID = 10 mAdc)

Drain±Source On±Voltage

VDS(on)

0.375

Vdc

(VGS = 10 Vdc, ID = 1 Adc)

Forward Transconductance

gfs

1.2

(VDS = 10 Vdc, ID = 1 Adc )

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Output Capacitance

Coss

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

Crss

8.8

10.8

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

FUNCTIONAL TESTS (In Motorola Test Fixture)

Common±Source Amplifier Power Gain

Gps

(VDD = 12.5 Vdc, Pout = 15 W,

f = 512 MHz

11.5

IDQ = 100 mA)

f = 175 MHz

Drain Efficiency

(VDD = 12.5 Vdc, Pout = 15 W,

f = 512 MHz

IDQ = 100 mA)

f = 175 MHz

Load Mismatch

(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,

No Degradation in Output Power

Load VSWR = 20:1, All Phase Angles at Frequency of Test)

VGG

VDD

Socket

C12

C13

DUT

C11

Z10

C10

Z11

Input

Output

B1, B2

Ferrite Bead, Fair Rite Products

160 W, 0.1 W Chip

C1, C13

10 mF, 50 V, Electrolytic

Z1, Z11

Transmission Line*

C2, C12

0.1 mF, Chip Capacitor

Transmission Line*

C3, C4, C10, C11 120 pF, Chip Capacitor

Transmission Line*

C5, C9

0 to 20 pF, Trimmer Capacitor

Transmission Line*

36 pF, Chip Capacitor

Transmission Line*

43 pF, Chip Capacitor

Transmission Line*

30 pF, Chip Capacitor

Z7, Z8

Transmission Line+

L1, L2

7 Turns, 24 AWG 0.116″ ID

Transmission Line*

N1, N2

Type N Flange Mount

Z10

Transmission Line*

1 kW, 1/4 W, Carbon

Board

Glass Teflon

0.060″

470 kW, 1/4 W, Carbon

+ Part of Capacitor Mount Socket

*See Photomaster

Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic

MRF5015	MOTOROLA RF DEVICE DATA
2

					TYPICAL CHARACTERISTICS
	25							25					Pin = 1.5 W
			f = 400 MHz		470 MHz				IDQ = 100 mA				Pin = 1.5 W
(WATTS)	20						(WATTS)	20	f = 520 MHz
	20							20
					520 MHz								1 W
					520 MHz

POWER	15						POWER	15
													0.5 W

, OUTPUT	10						, OUTPUT	10
, OUTPUT					VDD = 12.5 V		, OUTPUT
out	5				VDD = 12.5 V		out	5
P					IDQ = 100 mA		P
					IDQ = 100 mA
	0							0
	0	0.5	1	1.5	2	2.5		6	8	10	12	14	16
			Pin, INPUT POWER (WATTS)							VDD, SUPPLY VOLTAGE (VOLTS)

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Supply Voltage

Pout , OUTPUT POWER (WATTS)

25
	VDD = 12.5 V
	Pin = 1.5 W
20	f = 520 MHz
20
15				Typical Device Shown
10				Typical Device Shown
5	1	2	3	4	5	6
0	1	2	3	4	5	6

VGS, GATE±SOURCE VOLTAGE (VOLTS)

I D, DRAIN CURRENT (AMPS)

2
1.8	VDS = 10 V
1.6
1.4
1.2
1
0.8
0.6		Typical Device Shown
0.4		Typical Device Shown
0.4
0.2
0	1	2	3	4
0	1	2	3	4

VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 4. Output Power versus Gate Voltage

Figure 5. Drain Current versus Gate Voltage

	200						SOURCE VOLTAGE (NORMALIZED)
						VGS = 0
						f = 1 MHz
C, CAPACITANCE (pF)	150
	100	Coss
	100
	50
							-
				Ciss			, GATE
				Ciss
			Crss
			Crss				GS
	0						V
	0
	0	5	10	15	20	25	30
		VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

1.04
1.03		VDD = 12.5 V				ID = 1.5 A
1.02							ID = 1 A
1.01							ID = 1 A
1.01
1.00
0.99
0.98
0.97
0.96		ID = 0.05 A					ID = 0.5 A
0.95		ID = 0.05 A				ID = 0.25 A
0.95						ID = 0.25 A
0.94	0
± 25	0	25	50	75	100	125	150	175
			TC, CASE TEMPERATURE (°C)

Figure 6. Capacitance versus Voltage	Figure 7. Gate±Source Voltage
	versus Case Temperature

MOTOROLA RF DEVICE DATA	MRF5015
	3

TYPICAL CHARACTERISTICS

	10
(AMPS)
, DRAIN CURRENT	1	TC = 25°C
	1

D
I
	0.1	10	100
	1	10	100

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 8. DC Safe Operating Area

520 ZOL* 460

f = 400 MHz

Zo = 10 Ω

520

460

Zin

f = 400 MHz

VDD = 12.5 V, IDQ = 100 mA, Pout = 15 W

f	Zin	ZOL*
(MHz)	(Ω)	(Ω)

400	2.0 ± j6.1	1.3 ± j0.4

420	1.8 ± j5.3	1.4 ± j0.4

440	1.6 ± j4.7	1.5 ± j0.4

460	1.5 ± j4.2	1.5 ± j0.3

480	1.4 ± j3.8	1.5 ± j0.2

500	1.3 ± j3.6	1.4 ± j0.1

520	1.2 ± j3.5	1.3 + j0.1

Zin = Conjugate of source impedance with parallel 160 Ω resistor and 36 pF capacitor in series with gate.

ZOL* = Conjugate of the load impedance at given output power, voltage and frequency that produces maximum gain.

Figure 9. Series Equivalent Input and Output Impedance

MRF5015	MOTOROLA RF DEVICE DATA
4

Table 1. Common Source Scattering Parameters (VDS = 12.5 V)

ID = 50 mA

f		S11			S21			S12			S22
MHz	\|S11\|		φ	\|S21\|		φ	\|S12\|		φ	\|S22\|		φ
50	0.63		±123	8		100	0.063		11	0.79		±149
100	0.62		±142	4		82	0.063		± 6	0.82		±162
200	0.70		±152	1.8		61	0.056		± 23	0.86		±169
300	0.78		±157	1.1		47	0.046		± 35	0.90		±171
400	0.84		±162	0.70		36	0.037		± 42	0.93		±174
500	0.88		±165	0.49		28	0.029		± 46	0.94		±175
700	0.93		±171	0.28		17	0.016		± 45	0.97		±179
850	0.95		±175	0.20		13	0.010		± 31	0.97		179
1000	0.96		±178	0.15		10	0.007		11	0.98		178

ID = 100 mA

f		S11			S21			S12			S22
MHz	\|S11\|		φ	\|S21\|		φ	\|S12\|		φ	\|S22\|		φ
50	0.67		±136	9.1		99	0.047		10	0.82		±158
100	0.66		±153	4.6		84	0.048		±3	0.85		±168
200	0.71		±160	2.2		66	0.043		±17	0.87		±172
300	0.77		±163	1.3		54	0.037		± 26	0.90		±174
400	0.82		±165	0.89		44	0.031		± 32	0.92		±175
500	0.86		±168	0.64		36	0.025		± 35	0.94		±177
700	0.91		±173	0.37		25	0.015		± 30	0.96		±179
850	0.93		±176	0.27		20	0.010		±11	0.97		179
1000	0.95		±179	0.20		16	0.009		25	0.98		177

ID = 500 mA

f		S11			S21			S12			S22
MHz	\|S11\|		φ	\|S21\|		φ	\|S12\|		φ	\|S22\|		φ
50	0.81		±150	11.1		98	0.027		11	0.85		±168
100	0.81		±164	5.6		86	0.027		2	0.87		±174
200	0.82		±170	2.7		73	0.025		± 5	0.88		±176
300	0.84		±173	1.7		63	0.023		± 9	0.89		±177
400	0.86		±174	1.2		55	0.020		± 9	0.91		±178
500	0.88		±175	0.92		47	0.018		± 7	0.92		±179
700	0.91		±178	0.57		35	0.013		7	0.94		180
850	0.93		180	0.43		29	0.013		26	0.95		178
1000	0.94		178	0.33		23	0.014		44	0.96		177

ID = 2.5 A

f		S11			S21			S12			S22
MHz	\|S11\|		φ	\|S21\|		φ	\|S12\|		φ	\|S22\|		φ
50	0.86		±144	10.1		101	0.022		15	0.85		±171
100	0.85		±161	5.2		88	0.022		5	0.87		±175
200	0.86		±170	2.5		74	0.021		±1	0.89		±177
300	0.87		±173	1.6		64	0.019		± 4	0.90		±178
400	0.89		±175	1.1		55	0.017		± 2	0.91		±178
500	0.91		±176	0.84		48	0.015		2	0.93		±179
700	0.93		±179	0.52		37	0.013		22	0.95		179
850	0.94		179	0.39		30	0.014		39	0.96		178
1000	0.95		177	0.30		26	0.016		52	0.96		176

MOTOROLA RF DEVICE DATA	MRF5015
	5

Источник: https://studfile.net/preview/16503480/

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