Материал: mrf6414rev0
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF6414/D
The RF Line
NPN Silicon
RF Power Transistor
The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications.
•Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts
Minimum Gain = 8.5 dB @ 960 MHz, Class AB Minimum Efficiency = 50% @ 960 MHz, 50 Watts
•Silicon Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
•Circuit Board Photomaster Available by Ordering Document MRF6414PHT/D from Motorola Literature Distribution.
MAXIMUM RATINGS
MRF6414
50 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 333A± 02, STYLE 2
Rating |
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Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
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VCEO |
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28 |
Vdc |
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Collector±Base Voltage |
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VCBO |
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65 |
Vdc |
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Emitter±Base Voltage |
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VEBO |
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4 |
Vdc |
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Collector±Current Ð Continuous |
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IC |
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6 |
Adc |
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Total Device Dissipation @ TC = 25°C |
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PD |
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134 |
Watts |
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Derate above 25°C |
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0.77 |
W/°C |
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Storage Temperature Range |
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Tstg |
± 65 to +150 |
°C |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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1.3 |
°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) |
V(BR)CEO |
28 |
Ð |
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Ð |
Vdc |
Collector±Base Breakdown Voltage (IC = 20 mAdc, IE = 0) |
V(BR)CBO |
65 |
Ð |
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Ð |
Vdc |
Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0) |
V(BR)EBO |
4 |
Ð |
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Ð |
Vdc |
Collector±Emitter Leakage Current (VCE = 30 Vdc, RBE = 75 Ω) |
ICER |
Ð |
Ð |
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10 |
mAdc |
ON CHARACTERISTICS |
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DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) |
hFE |
30 |
Ð |
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120 |
Ð |
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
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Typ |
Max |
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Unit |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
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45 |
Ð |
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pF |
(VCB = 26 Vdc, IE = 0, f = 1 MHz) (1) |
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FUNCTIONAL TESTS |
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Common±Emitter Amplifier Power Gain |
Gpe |
8.5 |
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Ð |
Ð |
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dB |
(VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz) |
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Collector Efficiency |
η |
50 |
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55 |
Ð |
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% |
(VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz) |
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Output Mismatch Stress |
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(VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz) |
Ψ |
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No Degradation in Output Power |
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VSWR = 3:1; all phase angles at frequency of test |
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(1) For information only. It is not measurable in MRF6414 because of internal matching network.
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C9 |
T2 |
+VCC |
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C8 |
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R1 |
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P1 |
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D1 |
C5 |
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C6 |
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C7 |
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D2 |
C4 |
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R2 |
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RF OUTPUT |
RF INPUT |
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C3 |
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T1 |
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C1 |
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50 W |
50 W |
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C2 |
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C1, C3 |
100 pF, Chip Capacitor, Hight Q |
P1 |
1 kΩ, Trimmer |
C2, C7 |
330 pF, Chip Capacitor, 0805 |
R1 |
1 kΩ, Resistor |
C5, C8 |
10 nF, Chip Capacitor, 0805 |
R2 |
58 Ω, Resistor, 0805 |
C6 |
15 mF, Capacitor, 63 V |
T1 |
MRF6414 |
C9 |
100 mF, Capacitor, 16 V |
T2 |
Transistor NPN Type BD135 |
D1, D2 |
Diode 1N4007 |
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Figure 1. 960 MHz Test Circuit Schematic
MRF6414 |
MOTOROLA RF DEVICE DATA |
2 |
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TYPICAL CHARACTERISTICS |
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70 |
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70 |
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(WATTS) |
60 |
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(WATTS) |
60 |
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50 |
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50 |
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Pin = 5 W |
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POWER |
40 |
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POWER |
40 |
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OUTPUT, |
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OUTPUT, |
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20 |
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VCC = 26 V |
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20 |
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30 |
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30 |
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out |
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I |
= 200 mA |
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out |
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P |
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Q |
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P |
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VCC = 26 V |
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10 |
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f = 960 MHz |
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10 |
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IQ = 200 mA |
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0 |
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0 |
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0 |
2 |
4 |
6 |
8 |
10 |
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900 |
920 |
940 |
960 |
980 |
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Pin, INPUT POWER (WATTS) |
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f, FREQUENCY (MHz) |
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Figure 2. Output Power versus Input Power (Typical) |
Figure 3. Output Power versus Frequency |
Pout , OUTPUT POWER (WATTS)
60 |
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50 |
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Pin = 5 W |
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40 |
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3 W |
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30 |
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IQ = 200 mA |
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f = 960 MHz |
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20 |
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18 |
20 |
22 |
24 |
26 |
28 |
30 |
32 |
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12 |
Gpe |
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70 |
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10 |
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65 |
(dB) |
9 |
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η |
60 |
GAIN |
8 |
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55 |
, POWER |
7 |
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1.6 |
50 |
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1.4 |
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pe |
6 |
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45 |
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G |
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VSWR |
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1.2 |
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5 |
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40 |
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4 |
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950 |
960 |
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35 |
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920 |
930 |
940 |
970 |
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Vdc, SUPPLY VOLTAGE (VOLTS) |
f, FREQUENCY (MHz) |
Figure 4. Output Power versus Supply Voltage |
Figure 5. Typical Broadband Amplifier |
MOTOROLA RF DEVICE DATA |
MRF6414 |
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3 |
C9
MRF6414 |
C6 |
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C4
C8
C5
C7 
FB
C1 |
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C2 |
C3 |
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INPUT |
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OUTPUT |
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Figure 6. 960 MHz Test Circuit Components Layout
Z*load
Zin
Normalized to 10 W
f |
Zin |
ZOL* |
MHz |
Ohms |
Ohms |
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900 |
4.4 + j4.6 |
4.7 + j4.7 |
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935 |
5.1 + j4.8 |
4.0 + j3.9 |
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960 |
5.4 + j3.6 |
3.7 + j4.5 |
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980 |
4.7 + j2.5 |
3.4 + j4.7 |
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ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency.
Figure 7. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, IQ = 200 mA, Pout = 50 W
MRF6414 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
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L |
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IDENTIFICATION |
N |
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NOTES: |
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NOTCH |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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4 |
5 |
6 |
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Y14.5M, 1982. |
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2. |
CONTROLLING DIMENSION: INCH. |
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INCHES |
MILLIMETERS |
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±B± |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
0.965 |
0.985 |
24.52 |
25.01 |
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B |
0.390 |
0.410 |
9.91 |
10.41 |
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C |
0.250 |
0.290 |
6.35 |
7.36 |
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D |
0.075 |
0.090 |
1.91 |
2.28 |
1 |
2 |
3 |
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E |
0.095 |
0.115 |
2.42 |
2.92 |
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F |
0.110 |
0.130 |
2.80 |
3.30 |
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K 2 PL |
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Q 2 PL |
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H |
0.155 |
0.175 |
3.94 |
4.44 |
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D 4 PL |
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0.13 (0.005) M |
T |
A |
M |
B |
M |
J |
0.004 |
0.006 |
0.11 |
0.15 |
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K |
0.090 |
0.116 |
2.29 |
2.94 |
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F 2 PL |
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L |
0.725 BSC |
18.41 BSC |
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N |
0.415 |
0.435 |
10.55 |
11.04 |
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J |
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Q |
0.120 |
0.135 |
3.05 |
3.42 |
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STYLE 2: |
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PIN 1. EMITTER |
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C |
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2. BASE |
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3. EMITTER |
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E |
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H |
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4. EMITTER |
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5. COLLECTOR |
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±T± |
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6. EMITTER |
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±A± |
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SEATING |
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PLANE |
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CASE 333A±02
ISSUE C
MOTOROLA RF DEVICE DATA |
MRF6414 |
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5 |