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Philips Semiconductors Product specification

Rectifier diode

BY359F-1500

fast, high-voltage

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass-passivated double diffused

SYMBOL

PARAMETER

MAX.

UNIT

rectifier diode in a full pack plastic

envelope

featuring low forward

VRRM

Repetitive peak reverse voltage

1500

voltage drop, fast reverse recovery

Forward voltage

1.5

and soft recovery characteristic. The

IF(AV)

Average forward current

device

is intended for use in TV

IFSM

Non-repetitive peak forward current

receivers, series resonant switched

trr

Reverse recovery time

0.6

μs

mode power supplies and other high

voltage circuits.

PINNING - SOD100

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

cathode

anode

case

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VRSM

Non-repetitive peak reverse

1500

voltage

VRRM

Repetitive peak reverse voltage

1500

VRWM

Crest working reverse voltage

sinusoidal; a = 1.57; T ≤ 54 ˚C

1300

Average forward current1

F(AV)

IF(RMS)

RMS forward current

15.7

IFRM

Repetitive peak forward current

sinusoidal; a = 1.57

IFSM

Non-repetitive peak forward

t = 10 ms

current

t = 8.3 ms

half sine wave; Tj = 150 ˚C prior to

I2t

I2t for fusing

surge; with reapplied VRWM(max)

A2s

t = 10 ms

Tstg

Storage temperature

-40

150

˚C

Operating junction temperature

150

˚C

ISOLATION

Ths = 25 ˚C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Visol

Repetitive peak voltage from

R.H. ≤ 65% ; clean and dustfree

1500

both terminals to external

heatsink

Cisol

Capacitance from cathode to

f = 1 MHz

external heatsink

1 Neglecting switching and reverse current losses.

October 1994

Rev 1.100

Philips Semiconductors Product specification

Rectifier diode					BY359F-1500
fast, high-voltage

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT

Rth j-hs	Thermal resistance junction to	with heatsink compound		-	-	4.8	K/W
	heatsink	without heatsink compound		-	-	5.9	K/W
Rth j-a	Thermal resistance junction to	in free air.		-	55	-	K/W
	ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT

VF	Forward voltage	IF = 20 A		-	1.3	1.8	V
		IF = 10 A; Tj = 150˚C		-	1.00	1.5	V
IR	Reverse current	VR = 1300 V		-	10	100	mA
		VR = 1300 V; Tj = 100 ˚C		-	50	300	mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS		MIN.	TYP.	MAX.	UNIT

trr	Reverse recovery time	IF = 2 A; VR	³ 30 V; -dIF/dt = 20 A/ms	-	0.47	0.6	ms
Qs	Reverse recovery charge	IF = 2 A; VR	³ 30 V; -dIF/dt = 20 A/ms	-	1.6	2.0	mC
Vfr	Peak forward recovery voltage	IF = 10 A; dIF/dt = 30 A/ms		-	11.0	-	V

October 1994

Rev 1.100

Philips Semiconductors	Product specification

Rectifier diode	BY359F-1500
fast, high-voltage

I		dI
I		F
F		dt
		dt
			trr
				time
		Qs	25%	100%
			25%
I	I
R	I
	rrm
	Fig.1.	Definition of trr, Qs and Irrm

I F

time

V F

V fr

V F

time

Fig.2. Definition of Vfr

30	PF / W		BY359		Ths(max) / C
		Vo = 1.1600 V			D = 1.0
		Rs = 0.0340 Ohms			D = 1.0
25							30
			0.5
20			0.2				54
			0.2
15		0.1					78
15							78
10			I	tp	D =	tp	102
			I		D =	T
5							126
					T	t
					T
0	0	5	10		15		150
	0	5	10		15		20
			IF(AV) / A

Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x ÖD.

PF / W			BY359X		Ths(max) / C
20					a = 1.57	54
20				1.9		54
			2.2	1.9
			2.2
			2.8
		4
10						102
0						150
0	2	4	6	8	10	12
			IF(AV) / A

Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).

IFS(RMS) / A				BY359
80
70
60	IFSM
60
50
40
30
20
10
0
1ms	10ms	0.1s	1s	10s

tp / s

Fig.5. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150˚C prior to surge with reapplied VRWM.

IF / A
30
	Tj=150C
	Tj=25C
20
10	typ
		max
0	1.0	2.0
0	1.0	2.0
		VF / V

Fig.6. Typical and maximum forward characteristic IF = f(VF); parameter Tj

October 1994

Rev 1.100

Philips Semiconductors	Product specification

Rectifier diode	BY359F-1500
fast, high-voltage

10 trr / us
1.0			IF =
1.0
			10A
			5A
			2A
			1A
0.1
1.0	10	-dIF/dt (A/us)	100
Fig.7. Maximum reverse recovery time trr = f(dIF/dt);
	parameter Tj

10	Qs / uC
			IF =
			10A
			5A
			2A
1.0			1A
1.0
0.1
1.0		10	100
		-dIF/dt (A/us)

Fig.8. Maximum reverse recovery charge Qs = f(dIF/dt); parameter Tj

10	Zth j-hs / (K/W)
1
0.1				PD	tp
				PD	tp
							t
0.01
10us		100us	1ms	10ms	0.1s	1s	10s
				tp / s

Fig.9. Transient thermal impedance Zth = f(tp)

October 1994

Rev 1.100

Philips Semiconductors Product specification

Rectifier diode

BY359F-1500

fast, high-voltage

MECHANICAL DATA

Dimensions in mm

	10.2
Net Mass: 2 g	max
	5.7
	max	0.9
	3.2	0.5
	3.0

4.4

4.0

seating plane

	3.5 max	4.4
	not tinned	4.4
	not tinned

13.5 min

k a

0.4M 0.9

0.7

5.08

4.4 max

2.9 max

7.9

7.5

17 max

0.55 max

1.3

top view

Fig.10. SOD100; The seating plane is electrically isolated from all terminals.

Notes

1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.

2.Epoxy meets UL94 V0 at 1/8".

October 1994

Rev 1.100

Источник: https://studfile.net/preview/16504116/

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