Материал: 9415
DISCRETE SEMICONDUCTORS
PHN110
N-channel enhancement mode MOS transistor
Product specification |
1996 Apr 02 |
Supersedes data of November 1994
File under Discrete Semiconductors, SC07
Philips Semiconductors |
Product specification |
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N-channel enhancement mode
PHN110
MOS transistor
FEATURES
∙High speed switching
∙No secondary breakdown
∙Very low on-resistance.
DESCRIPTION
N-channel enhancement mode MOS transistor in an 8-pin plastic SO8 (SOT96-1) package.
APPLICATIONS
∙Motor and actuator driver
∙Power management
∙Synchronized rectifying.
PINNING - SO8 (SOT96-1)
PIN |
SYMBOL |
DESCRIPTION |
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1 |
n.c |
not connected |
2 |
s |
source |
3 |
s |
source |
4 |
g |
gate |
5 |
d |
drain |
6 |
d |
drain |
7 |
d |
drain |
8 |
d |
drain |
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handbook, halfpage |
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d |
d d |
d |
8 |
5 |
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1 |
4 |
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MAM116 |
n.c. s |
s |
g |
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
MAX. |
UNIT |
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VDS |
drain-source voltage (DC) |
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− |
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30 |
V |
VSD |
source-drain diode forward voltage |
IS = 1.25 A |
− |
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1.2 |
V |
VGS |
gate-source voltage (DC) |
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− |
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±20 |
V |
VGSth |
gate-source threshold voltage |
ID = 1 mA; VDS = VGS |
1 |
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2.8 |
V |
ID |
drain current (DC) |
Ts = 80 °C |
− |
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4 |
A |
RDSon |
drain-source on-state resistance |
ID = 2.2 A; VGS = 10 V |
− |
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0.1 |
Ω |
Ptot |
total power dissipation |
Ts = 80 °C |
− |
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2.8 |
W |
1996 Apr 02 |
2 |
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode
PHN110
MOS transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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VDS |
drain-source voltage (DC) |
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− |
30 |
V |
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VGS |
gate-source voltage (DC) |
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− |
±20 |
V |
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ID |
drain current (DC) |
Ts = 80 °C; note 1 |
− |
4 |
A |
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IDM |
peak drain current |
note 2 |
− |
16 |
A |
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Ptot |
total power dissipation |
Ts = 80 °C |
− |
2.8 |
W |
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Tamb = 25 °C; note 3 |
− |
2.4 |
W |
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Tamb = 25 °C; note 4 |
− |
1.1 |
W |
Tstg |
storage temperature |
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−65 |
+150 |
°C |
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Tj |
operating junction temperature |
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−65 |
+150 |
°C |
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Source-drain diode |
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IS |
source current (DC) |
Ts = 80 °C |
− |
3.5 |
A |
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ISM |
peak pulsed source current |
note 2 |
− |
14 |
A |
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Notes
1.Ts is the temperature at the soldering point of the drain lead.
2.Pulse width and duty cycle limited by maximum junction temperature.
3.Value based on PCB with a Rth a-tp (ambient to tie-point) of 27.5 K/W.
4.Value based on PCB with a Rth a-tp (ambient to tie-point) of 90 K/W.
6 |
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MBG848 |
102 |
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MBG750 |
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handbook, halfpage |
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handbook, halfpage |
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Ptot |
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ID |
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(A) |
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(W) |
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10 |
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tp = |
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(1) |
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4 |
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10 μs |
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100 μs |
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1 |
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1 ms |
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P |
t p |
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10 ms |
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2 |
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δ = |
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T |
DC |
100 ms |
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10−1 |
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t p |
t |
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T |
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0 |
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10−2 |
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102 |
0 |
50 |
100 |
150 T |
s |
(oC) 200 |
10−1 |
1 |
10 |
VDS (V) |
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δ = 0.01; TS = 80 °C.
(1) RDSon limitation.
Fig.2 Power derating curve. |
Fig.3 DC SOAR. |
1996 Apr 02 |
3 |
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode
PHN110
MOS transistor
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
VALUE |
UNIT |
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Rth j-s |
thermal resistance from junction to soldering point |
25 |
K/W |
102 |
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MBG749 |
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handbook, full pagewidth |
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Rth j−s |
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(K/W) |
δ = |
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0.75 |
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10 |
0.5 |
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0.33 |
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0.2 |
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0.1 |
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0.05 |
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1 |
0.02 |
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P |
t p |
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δ = |
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T |
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0.01 |
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0 |
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t p |
t |
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T |
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10−1 |
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10−6 |
10−5 |
10−4 |
10−3 |
10−2 |
10−1 |
tp (s) |
1 |
Fig.4 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values
1996 Apr 02 |
4 |
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode
PHN110
MOS transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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V(BR)DSS |
drain-source breakdown voltage |
VGS = 0; ID = 10 μA |
30 |
− |
− |
V |
VGSth |
gate-source threshold voltage |
VGS = VDS; ID = 1 mA |
1 |
− |
2.8 |
V |
IDSS |
drain-source leakage current |
VGS = 0; VDS = 24 V |
− |
− |
100 |
nA |
IGSS |
gate leakage current |
VGS = ±20 V; VDS = 0 |
− |
− |
±100 |
nA |
RDSon |
drain-source on-state resistance |
VGS = 4.5 V; ID = 1 A |
− |
0.11 |
0.2 |
Ω |
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VGS = 10 V; ID = 2 A |
− |
0.08 |
0.1 |
Ω |
Ciss |
input capacitance |
VGS = 0; VDS = 24 V; f = 1 MHz |
− |
250 |
− |
pF |
Coss |
output capacitance |
VGS = 0; VDS = 24 V; f = 1 MHz |
− |
140 |
− |
pF |
Crss |
reverse transfer capacitance |
VGS = 0; VDS = 24 V; f = 1 MHz |
− |
50 |
− |
pF |
Qg |
total gate charge |
VGS = 10 V; VDD = 15 V; ID = 2 A |
− |
10 |
30 |
nC |
Qgs |
gate-source charge |
VGS = 10 V; VDD = 15 V; ID = 2 A |
− |
1 |
− |
nC |
Qgd |
gate-drain charge |
VGS = 10 V; VDD = 15 V; ID = 2 A |
− |
2.5 |
− |
nC |
Switching times (see Fig 11) |
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td(on) |
turn-on delay time |
VGS = 0 to 10 V; VDD = 15 V; |
− |
4.5 |
− |
ns |
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ID = 1 A; RL = 15 Ω; Rgen = 6 Ω |
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tf |
fall time |
− |
3.5 |
− |
ns |
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ton |
turn-on switching time |
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− |
8 |
16 |
ns |
td(off) |
turn-off delay time |
VGS = 10 to 0 V; VDD = 15 V; |
− |
15 |
− |
ns |
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ID = 1 A; RL = 15 Ω; Rgen = 6 Ω |
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tr |
rise time |
− |
10 |
− |
ns |
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toff |
turn-off switching time |
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− |
25 |
50 |
ns |
Source-drain diode |
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VSD |
source-drain diode forward voltage |
VGS = 0; IS = 1.25 A |
− |
− |
1.2 |
V |
trr |
reverse recovery time |
IS = 1.25 A; di/dt = −100 A/μs |
− |
35 |
100 |
ns |
1996 Apr 02 |
5 |