Материал: 9415
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode
PHN110
MOS transistor
10 |
|
|
|
MBE136 |
|
|
|
|
|
handbook, halfpage |
|
|
|
|
VGS |
|
|
|
|
(V) |
|
|
|
|
8 |
|
|
|
|
6 |
|
|
|
|
4 |
|
|
|
|
2 |
|
|
|
|
0 |
|
|
|
|
0 |
2 |
4 |
6 |
Q g (nC) 8 |
VDD = 15 V: ID = 2 A. |
|
|
|
|
Fig.5 Gate-source voltage as a function of total gate charge; typical values.
MBG748
18 handbook, halfpage
ID |
VGS = |
|
|
|
|
|
(A) |
|
|
|
|
|
|
10 V |
6 V |
|
|
|
|
|
16 |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
5.5 V |
|
|
|
12 |
|
|
|
|
|
4.5 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
4 V |
8 |
|
|
|
|
|
|
|
|
|
|
|
|
3.5 V |
4 |
|
|
|
|
|
|
|
|
|
|
|
|
3 V |
|
|
|
|
|
|
2.5 V |
0 |
0 |
2 |
4 |
6 |
8 |
10 |
|
||||||
|
|
|
|
|
|
VDS (V) |
Tj = 25 °C.
Fig.6 Output characteristics; typical values.
MBG747
16 handbook, halfpage
ID
(A)
12
8
4
0
0 |
2 |
4 |
6 VGS (V) 8 |
VDS = 10 V; Tj = 25 °C.
Fig.7 Transfer characteristics; typical values.
MBG746
16 handbook, halfpage
IS
(A)
12
8
(1) |
(2) |
(3) |
4
0
0 |
0.4 |
0.8 |
VSD (V) |
1.2 |
|
|
|
|
VGD = 0.
(1)Tj = 150 °C.
(2)Tj = 25 °C.
(3)Tj = −65 °C.
Fig.8 Source current as a function of source-drain diode forward voltage; typical values.
1996 Apr 02 |
6 |
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode
PHN110
MOS transistor
103 |
MBG846 |
|
|
handbook, halfpage |
ID= 100 mA |
|
|
|
500 mA |
|
1 A |
RDSon |
2 A |
(mW) |
4 A |
|
5.4 A |
102 |
|
10 |
|
|
|
|
|
|
|
|
|
|
|
8 |
|
|
|
0 |
2 |
4 |
6 |
10 |
|||
|
|
|
|
|
|
VGS (V) |
|
VDS ³ ID ´ RDSon; Tj = 25 °C. |
|
|
|
|
|
||
Fig.9 |
Drain-source on-resistance as a function of |
||||||
|
|
gate-source voltage; typical values. |
|||||
MBG847
600 handbook, halfpage
C (pF)
400
Ciss
200
Coss
Crss
0
0 |
8 |
16 |
VDS (V) |
24 |
|
|
|
|
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.10 Capacitance as a function of drain-source voltage; typical values.
handbook, full pagewidth |
|
90 % |
|
|
VDD |
|
|
|
|
|
|
|
|
|
|
Vin |
|
|
|
RL |
0 |
10 % |
|
|
|
|
|
|
|
|
Vout |
90 % |
|
|
|
|
|
|
|
Vin |
Vout |
|
|
|
|
10 % |
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
td(on) |
td(off) |
|
|
|
tf |
|
tr |
|
|
ton |
toff |
MBH538 |
|
|
|
Fig.11 Switching time test circuit and input and output waveforms.
1996 Apr 02 |
7 |
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode |
|
|
|
|
|
PHN110 |
|||||
MOS transistor |
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|||
1.2 |
|
|
|
|
MBG745 |
1.8 |
|
|
|
|
MBG744 |
|
|
|
|
|
|
|
|
|
|
||
handbook, halfpage |
|
|
|
|
|
handbook, halfpage |
|
|
|
|
|
k |
|
|
|
|
|
k |
|
|
|
|
|
1.1 |
|
|
|
|
|
1.6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(1) |
|
1.0 |
|
|
|
|
|
1.4 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(2) |
|
0.9 |
|
|
|
|
|
1.2 |
|
|
|
|
|
0.8 |
|
|
|
|
|
1.0 |
|
|
|
|
|
0.7 |
|
|
|
|
|
0.8 |
|
|
|
|
|
0.6 |
−25 |
|
|
|
|
0.6 |
−25 |
|
|
|
|
−75 |
25 |
75 |
125 |
175 |
−75 |
25 |
75 |
125 |
175 |
||
|
|
|
|
Tj (oC) |
|
|
|
|
Tj (oC) |
||
|
|
|
|
|
|
RDSon |
at Tj |
Typical RDSon at: |
|
|
|
|
|
|
|
|
|
k = ----------------------------------------- |
|
|
|||
VGSth |
at Tj |
|
|
|
|
RDSon at 25 °C |
|
|
|
|
|
k = -------------------------------------- |
|
|
|
|
(1) ID = 2 A; VGS = 10 V. |
|
|
|
|||
VGSth at 25°C |
|
|
|
|
|
|
|
||||
Typical VGSth at VDS =VGS; ID = 1 mA. |
|
|
|
(2) ID = 1 A; VGS = 4.5 V. |
|
|
|
||||
Fig.12 Temperature coefficient of gate-source |
Fig.13 Temperature coefficient of drain-source |
threshold voltage; typical values. |
on-resistance; typical values. |
1996 Apr 02 |
8 |
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode
PHN110
MOS transistor
PACKAGE OUTLINE
|
5.0 |
4.0 |
|
|
handbook, full pagewidth |
3.8 |
A |
||
4.8 |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
6.2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
S |
|
|
|
0.1 |
S |
|
|||||||||||||||
|
|
|
5.8 |
|
|
||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
0.7
0.3
8 |
|
5 |
|
0.7 |
|
|
|
|
1.45 |
|
0.6 |
0.25 |
1.75 |
|
|
1.25 |
|
|
0.19 |
1.35 |
1 |
|
4 |
0.25 |
1.0 |
0 to 8o |
|
|
|
|
0.5 |
|
||
pin 1 |
|
|
0.10 |
|
||
|
|
|
|
|
||
index |
|
|
|
|
|
|
|
|
|
|
detail A |
MBC180 - 1 |
|
1.27 |
0.49 |
0.25 M |
|
|
|
|
|
0.36 |
|
|
|
|
|
|
(8x) |
|
|
|
|
|
|
|
|
|
|
|
Dimensions in mm.
Fig.14 Plastic small outline package; 8 leads; body width 3.9 mm; SO8 (SOT96-1).
1996 Apr 02 |
9 |
Philips Semiconductors |
Product specification |
|
|
N-channel enhancement mode
PHN110
MOS transistor
DEFINITIONS
Data Sheet Status
Objective specification |
This data sheet contains target or goal specifications for product development. |
|
|
Preliminary specification |
This data sheet contains preliminary data; supplementary data may be published later. |
|
|
Product specification |
This data sheet contains final product specifications. |
|
|
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1996 Apr 02 |
10 |