Материал: Manual E530_1
GSM TELEPHONE
SGH-E530
GSM TELEPHONE |
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CONTENTS |
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1. |
Specification |
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2. |
Flow Chart of Troubleshooting |
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3. |
Exploded Views and Parts List |
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4. |
Electrical Parts List |
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5. |
PCB Diagrams |
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6. |
Block Diagrams |
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1. SGH-E530 Specification
1-1. GSM General Specification
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GSM900 |
EGSM 900 |
DCS1800 |
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Phase 1 |
Phase 2 |
Phase 1 |
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Freq. Band[MHz] |
890~915 |
880~915 |
1710~1785 |
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Uplink/Downlink |
935~960 |
925~960 |
1805~1880 |
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ARFCN range |
1~124 |
0~124 & |
512~885 |
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975~1023 |
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Tx/Rx spacing |
45MHz |
45MHz |
95MHz |
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Mod. Bit rate/ |
270.833kbps |
270.833kbps |
270.833kbps |
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Bit Period |
3.692us |
3.692us |
3.692us |
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Time Slot |
576.9us |
576.9us |
576.9us |
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Period/Frame |
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4.615ms |
4.615ms |
4.615ms |
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Period |
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Modulation |
0.3GMSK |
0.3GMSK |
0.3GMSK |
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MS Power |
33dBm~13dBm |
33dBm~5dBm |
30dBm~0dBm |
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Power Class |
5pcl ~ 15pcl |
5pcl ~ 19pcl |
0pcl ~ 15pcl |
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Sensitivity |
-102dBm |
-102dBm |
-100dBm |
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TDMA Mux |
8 |
8 |
8 |
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Cell Radius |
35Km |
35Km |
2Km |
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1-1
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
SGH-E530 Specification
1-2. GSM TX power class
TX Power |
GSM900 |
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control level |
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5 |
33±2 dBm |
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6 |
31±2 dBm |
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7 |
29±2 dBm |
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8 |
27±2 dBm |
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9 |
25±2 dBm |
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10 |
23±2 dBm |
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11 |
21±2 dBm |
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12 |
19±2 dBm |
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13 |
17±2 dBm |
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14 |
15±2 dBm |
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15 |
13±2 dBm |
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16 |
11±3 dBm |
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17 |
9± 3dBm |
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18 |
7±3 dBm |
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19 |
5±3 dBm |
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TX Power |
DCS1800 |
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control level |
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0 |
30±3 dBm |
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1 |
28±3 dBm |
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2 |
26±3 dBm |
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3 |
24±3 dBm |
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4 |
22±3 dBm |
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5 |
20±3 dBm |
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6 |
18±3 dBm |
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7 |
16±3 dBm |
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8 |
14±3 dBm |
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9 |
12±4 dBm |
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10 |
10±4 dBm |
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11 |
8±4 dBm |
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12 |
6±4 dBm |
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13 |
4±4 dBm |
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14 |
2±5 dBm |
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15 |
0±5 dBm |
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1-2 |
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SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
2. SGH-E530 Flow Chart of Troubleshooting
2-1.Baseband
2-1-1. Power ON
'Power On' does not work
Current consumption >= 100mA
Yes
Check the Vbat Voltage of C551
Voltage >=3.3V
Yes
Check the pin of U401
Pin#J12 >= 2.8V
Yes
Pin#A13, A14 =2.8V
Yes
Freq = 13MHz Vrms >= 300mV Vpp 900mV
at the pin#27 of U102
Yes
Check the initial operation
END
No
Binary re_download
No
Charge the Battery
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Check U401 and C422 |
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No |
pin#G11 = 1.5V |
No |
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Check U401 and C442 |
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Yes |
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No |
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Check the clock generation circuit |
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(related to OSC100) |
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2-3
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization
SGH-E530 Flow Chart of Troubleshooting
C119
RTXIP
RTXIN
RTXQP
RTXQN
VRRF_2_9
CLK13M_RF
RF_EN
R102
CLK13M_RF
AFFC
VRRF_2_9
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34 |
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33 |
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32 |
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31 |
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28 |
27 |
26 |
25 |
24 |
23 |
22 |
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30 29 |
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35 |
GDN GDN |
DDV |
GDN GDN |
GDN |
PQRX |
TOUX |
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NEX |
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GDA2I |
G1DAI |
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GORF |
DORF |
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36GND |
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GND |
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RFIGN |
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1 |
RXQN |
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RFIGP |
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2 |
RXIP |
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U102 |
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RFIDN |
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3 |
RXIN |
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RFIDP |
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4 |
TXIP |
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RFIPN |
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5 |
TXIN |
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RFIPP |
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6 |
TXQP |
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GND |
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7 |
TXQN |
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NXI |
DDV |
NDP |
ODS |
NES |
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KLC S |
DSI |
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8 |
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9 |
10 |
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13 |
14 |
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C128
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VRRF_2_9 |
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L109 |
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C122 |
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OSC100 |
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C126 |
OUT 3 |
VCCC 4 |
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5 |
6 |
C124 |
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BUUFFOUT |
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BUUFFIN |
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GND |
VCCONT |
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2 |
1 |
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R105 |
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C127 |
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R106
C129
C120 |
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GSM_PAM_IN |
C121 |
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DPCS_PAM_IN |
21 |
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GSM_LNA_IN_N |
20 |
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GSM_LNA_IN_P |
19 |
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DCS_LNA_IN_N |
18 |
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DCS_LNA_IN_P |
17 |
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16 |
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15 |
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SEERRDAT
SEERRCLK
SEERRLE
C130 C131 C132
R103
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CLK13M_TR |
R104 |
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C123 |
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CLK13M_MC |
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C125 |
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CLK13M_YMU |
2-2
SAMSUNG Proprietary-Contents may change without notice
This Document can not be used without Samsung's authorization