Материал: mrf166wrev1d
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF166W/D
The RF MOSFET Line
Power Field Effect Transistor
N±Channel Enhancement±Mode MOSFET
Designed primarily for wideband large±signal output and driver stages to 500 MHz.
•Push±Pull Configuration Reduces Even Numbered Harmonics
•Typical Performance at 400 MHz, 28 Vdc
Output Power = 40 Watts
Gain = 13 dB
Efficiency = 50%
•Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts
Gain = 17 dB Efficiency = 60%
•Excellent Thermal Stability, Ideally Suited for Class A Operation
•Facilitates Manual Gain Control, ALC and Modulation Techniques
•100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
•Low Crss Ð 4.5 pF @ V DS = 28 Volts
•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MRF166W
40 W, 500 MHz
TMOS BROADBAND RF POWER FET
CASE 412±01, Style 1
3 
4 
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
1 |
5 |
FLANGE |
2 |
Rating |
Symbol |
Value |
Unit |
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Drain±Gate Voltage |
VDSS |
65 |
Vdc |
Drain±Gate Voltage (RGS = 1.0 MΩ) |
VDGR |
65 |
Vdc |
Gate±Source Voltage |
VGS |
± 40 |
Adc |
Drain Current Ð Continuous |
ID |
8.0 |
ADC |
Total Device Dissipation @ TC = 25°C |
PD |
175 |
Watts |
Derate above 25°C |
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1.0 |
°C/W |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
Operating Junction Temperature |
TJ |
200 |
°C |
THERMAL CHARACTERISTICS |
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Thermal Resistance Ð Junction to Case |
RθJC |
1.0 |
°C/W |
NOTE: Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS (1)
Drain±Source Breakdown Voltage |
V(BR)DSS |
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Vdc |
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(VGS = 0 Vdc, ID = 5.0 mA) |
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65 |
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Ð |
Ð |
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Zero Gate Voltage Drain Current |
IDSS |
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mA |
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(VDS = 28 Vdc, VGS = 0 Vdc) |
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Ð |
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Ð |
1.0 |
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Gate±Source Leakage Current |
IGSS |
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μA |
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(VGS = 40 Vdc, VDS = 0 Vdc) |
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Ð |
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Ð |
1.0 |
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ON CHARACTERISTICS (1) |
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Gate Threshold Voltage |
VGS(th) |
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Vdc |
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(VDS= 10 Vdc, ID = 25 mA) |
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1.0 |
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3.0 |
6.0 |
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Forward Transconductance |
gfs |
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mS |
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(VDS= 10 Vdc, ID = 1.5 A) |
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600 |
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800 |
Ð |
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DYNAMIC CHARACTERISTICS (1) |
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Input Capacitance |
Ciss |
Ð |
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30 |
Ð |
pF |
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(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) |
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Output Capacitance |
Coss |
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pF |
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(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) |
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Ð |
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35 |
Ð |
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Reverse Transfer Capacitance |
Crss |
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pF |
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(VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) |
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Ð |
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4.5 |
Ð |
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FUNCTIONAL CHARACTERISTICS (2) |
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Common Source Power Gain |
Gps |
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dB |
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(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) |
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11 |
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13 |
Ð |
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Drain Efficiency |
η |
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% |
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(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) |
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45 |
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50 |
Ð |
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Electrical Ruggedness |
Ψ |
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(VDD = 28 Vdc, Pout = 40 W, f = 400 MHz, IDG = 100 mA) |
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No Degradation in Output Power |
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Load VSWR = 30:1, All phase angles at frequency of test |
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(1) |
Each transistor chip measured separately. |
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(2) |
Both transistor chips operating in a push±pull amplifier. |
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MRF166W |
MOTOROLA RF DEVICE DATA |
2 |
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B |
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R7 |
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RFC1 |
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VDD 28 V |
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A |
R1 |
C14 |
D1 |
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C17 |
+ |
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+ |
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C22 |
C15 |
C16 |
C18 |
Vdc |
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R2 |
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± |
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RFC2 |
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± |
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A |
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C10 |
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T1 |
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C21 |
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C13 |
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Z8 |
C8 |
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L1 |
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R4 |
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R3 |
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T2 |
C2 |
Z2 |
Z3 |
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Z7 |
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RF INPUT |
C23 |
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L3 |
Z5 |
D.U.T. |
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C6 |
C7 |
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C3 |
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C5 |
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C4 |
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RF OUTPUT |
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Z6 |
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C1 |
Z1 |
L2 |
Z4 |
L4 |
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Z9 |
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Z10 |
C9 |
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R5 |
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R6 |
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A |
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C11 |
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RFC3 |
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B |
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C20 |
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C12 |
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C19 |
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L3, L4 |
0.065″ |
L1, L2 |
0.116″ |
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0.265″ |
0.455″ |
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C1, C2, C8, C9, |
270 pF, Chip Cap |
RFC1 |
Ferroxcube VK±200±19/4B |
C12, C13, C15 |
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RFC2, RFC3 |
10T, ID = 1/4″ , 18 AWG |
C3 |
5.6 pF, Chip Cap |
R1 |
10 kW, 10T |
C4 |
20 pF, Chip Cap |
R2 |
9.2 kW, 1/2 W |
C5 |
0 ± 20 pF, Johanson* |
R3, R6 |
330 W, 1.0 W |
C6 |
8.2 pF, Chip Cap |
R4 R5 |
520 W, 1/4 W |
C7 |
15 pF, Chip Cap |
R7 |
1.5 kW, 1/2 W |
C10, C11, C14, C19, |
0.01 mF |
T1, T2 |
Balun 2.0″ , 50 W Semi±Rigid Coax |
C20, C21, C22 |
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Z1, Z2 |
0.120 x 0.467″ |
C16, C17 |
680 pF, Feedthru |
Z3, Z4 |
0.120 x 0.55″ * |
C18 |
10 mF, 50 V |
Z5, Z6 |
0.120 x 0.49″ |
C23 |
0 ± 10 pF, Johanson* |
Z7, Z9 |
0.120 x 0.85″ |
D1 |
IN5343 ± Motorola Zener |
Z8, Z10 |
0.120 x 0.6″ for C6 |
L1, L2 |
Hair Pin Inductor #18 AWG, |
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0.065 W x 0.265 H |
* C4, C5 Center of Z3 and Z4 |
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L3, L4 |
Hair Pin Inductor #18 AWG, |
Board Material ± Teflon |
Fiberglass |
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0.116 W x 0.445 H |
Dielectric Thickness = 0.030″ , er = 2.55 Copper Clad, 2.0 oz. Copper |
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Figure 1. MRF166 400 MHz Test Circuit Schematic
MOTOROLA RF DEVICE DATA |
MRF166W |
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3 |
Pout , OUTPUT POWER (WATTS)
50 |
f = 175 MHz |
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45 |
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400 MHz |
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40 |
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35 |
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500 MHz |
30 |
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25 |
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20 |
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15 |
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10 |
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5 |
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VDD = 28 Vdc |
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IDQ = 200 mA |
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0 |
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0 |
1 |
2 |
3 |
4 |
Pin, INPUT POWER (WATTS)
Pout , OUTPUT POWER (WATTS)
45 |
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f = 400 |
MHz |
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Pin = |
3.0 W |
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40 |
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IDQ = |
100 mA |
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35 |
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2.0 W |
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30 |
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1.0 W |
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25 |
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15 |
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0.5 W |
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10 |
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0 |
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14 |
16 |
18 |
20 |
22 |
24 |
26 |
28 |
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12 |
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VDS, DRAIN±SOURCE VOLTAGE (VOLTS)
Figure 2. Output Power versus Input Power |
Figure 3. Output Power versus Voltage |
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40 |
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100 |
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V |
DD = 28 Vdc |
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35 |
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90 |
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(WATTS) |
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IDQ = 100 mA |
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SHOWN, |
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(pF) |
70 |
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TYPICAL DEVICE |
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30 |
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80 |
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OUTPUT, POWER |
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CAPACITANCEC, |
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25 |
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VGS(th) = 3.0 V |
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30 |
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60 |
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20 |
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f = |
400 |
MHz |
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50 |
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15 |
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40 |
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out |
10 |
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20 |
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P |
5 |
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0 |
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0 |
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±10 |
± 9 ± 8 ±7 ± 6 ± 5 ± 4 ± 3 ± 2 ±1 0 1 2 |
3 |
0 |
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VGS, GATE±SOURCE VOLTAGE (VOLTS)
Figure 4. Output Power versus Gate Voltage
VGS = 0 V
f = 1.0 MHz
Coss
Ciss
Crss
4 |
8 |
12 |
16 |
20 |
24 |
28 |
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VDS, DRAIN±SOURCE VOLTAGE (VOLTS) |
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Figure 5. Capacitance versus Voltage
MRF166W |
MOTOROLA RF DEVICE DATA |
4 |
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f = 500 MHz
Zin
400
ZOL*
f = 500 MHz
400 175
175
Zo = 50 Ω
VDD = 28 Vdc, IDQ = 100 mA, Pout = 40 W
f |
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Zin |
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ZOL* |
MHz |
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Ohms |
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Ohms |
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175 |
3.7 ± |
j 22.4 |
15.2 |
± j 16.6 |
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400 |
3.6 ± |
j 10.99 |
10.3 |
± j 7.99 |
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500 |
2.6 ± |
j 3.2 |
10.2 |
+ j 0.5 |
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Table 1. Input and Output Impedances
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
Figure 6. Series Equivalent Input/Output Impedance
MOTOROLA RF DEVICE DATA |
MRF166W |
|
5 |