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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF175LU/D

The RF MOSFET Line

RF Power

Field-Effect Transistors

N±Channel Enhancement±Mode

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed Performance
MRF175LU @ 28 V, 400 MHz (ªUº Suffix)
Output Power Ð 100 Watts
Power Gain Ð 10 dB Typ
Efficiency Ð 55% Typ
MRF175LV @ 28 V, 225 MHz (ªVº Suffix)
Output Power Ð 100 Watts
Power Gain Ð 14 dB Typ
Efficiency Ð 65% Typ	D

•100% Ruggedness Tested At Rated Output Power

•Low Thermal Resistance

• Low Crss Ð 20 pF Typ @ V DS = 28 V

MAXIMUM RATINGS

MRF175LU

MRF175LV

100 W, 28 V, 400 MHz

N±CHANNEL

BROADBAND

RF POWER FETs

CASE 333±04, STYLE 2

Rating	Symbol	Value	Unit

Drain±Source Voltage	VDSS	65	Vdc
Gate±Source Voltage	VGS	± 40	Vdc
Drain Current Ð Continuous	ID	13	Adc
Total Device Dissipation @ TC = 25°C	PD	270	Watts
Derate above 25°C		1.54	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Junction Temperature	TJ	200	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.65	°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage	V(BR)DSS	65	Ð	Ð	Vdc
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current	IDSS	Ð	Ð	2.5	mAdc
(VDS = 28 V, VGS = 0)
Gate±Body Leakage Current	IGSS	Ð	Ð	1.0	μAdc
(VGS = 20 V, VDS = 0)
					(continued)

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 8

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF175LU MRF175LV
	1

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.0

3.0

6.0

Vdc

Drain±Source On±Voltage (VGS = 10 V, ID = 5.0 A)

VDS(on)

0.1

0.9

1.5

Vdc

Forward Transconductance (VDS = 10 V, ID = 2.5 A)

gfs

2.0

3.0

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

180

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

200

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

FUNCTIONAL CHARACTERISTICS Ð MRF175LV (Figure 1)

Common Source Power Gain

Gps

(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA,

No Degradation in Output Power

VSWR 30:1 at all Phase Angles)

FUNCTIONAL CHARACTERISTICS Ð MRF175LU (Figure 2)

Common Source Power Gain

Gps

8.0

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA,

No Degradation in Output Power

VSWR 30:1 at all Phase Angles)

RFC1

BIAS

+28 Vdc

C10

C11

RF INPUT

RF OUTPUT

D.U.T.

C1, C2, C8 Ð Arco 463 or Equivalent C3, C7 Ð 25 pF Unelco Cap

C4 Ð 1000 pF Chip Cap

C5 Ð 0.01 mF Chip Cap

C6 Ð 250 pF Unelco Cap

C9 Ð Arco 462 or Equivalent

C10 Ð 1000 pF ATC Chip Cap

C11 Ð 10 mF 100 V Electrolytic

Ð Hairpin Inductor #18 Wire

L3 Ð Hairpin Inductor #16 Wire

0.45″

0.15″

0.32″

0.2″

Ð Stripline Inductor 0.200 ″ x 0.500″

L4 Ð 2 Turns #16 Wire 5/16 ″ ID

RFC1 Ð VK200±4B

Ð 1.0 k 1/4 W Resistor

Ð 100 W Resistor

Figure 1. 225 MHz Test Circuit

MRF175LU MRF175LV	MOTOROLA RF DEVICE DATA
2

				C11	C12	L3	C13	C14
								+ v
BIAS
C9	R2							GND
.01 mf	R2							GND
.01 mf				L2
				L2
		R1						C8
					Z2		Z3	OUT
C1	L1
IN		Z1
C2	C3	C4	D.U.T.	C5		C6	C7
				C5		C6	C7

C1, C8 Ð 270 pF ATC Chip Cap	L1	Ð Hairpin Inductor #18 Wire
C2, C4, C6, C7 Ð 1.0 ± 20 pF Trimmer Cap
C2, C4, C6, C7 Ð 1.0 ± 20 pF Trimmer Cap
C3 Ð 15 pF Mini Unelco Cap
C5 Ð 33 pF Mini Unelco Cap
C9, C12 Ð 0.1 mF Ceramic Cap		0.25″
C11, C14 Ð 680 pF Feed Thru Cap			0.4″
C13 Ð 50 mF Tantalum Cap	L2	Ð 12 Turns #18 Wire 0.450 ″ ID
	L2	Ð 12 Turns #18 Wire 0.450 ″ ID
	L3	Ð Ferroxcube VK200 20/4B

R1 Ð 10 k 1/4 W Resistor

R2 Ð 1 k 1/4 W Resistor

R3 Ð 1.5 k 1/4 W Resistor

Z1 Ð Microstrip Line 0.950 ″ x 0.250″

Z2 Ð Microstrip Line 1 ″ x 0.250″

Z3 Ð Microstrip Line 0.550 ″ x 0.250″

Board Material Ð 0.062 ″ Teflon Ð fiberglass, er = 2.56, 1 oz. copper clad both sides

Figure 2. 400 MHz Test Circuit

								TYPICAL CHARACTERISTICS
	4000											100
GAIN FREQUENCY (MHz)	3000					VDS = 20 V
						VDS = 20 V
	2000						10 V					10
							10 V					DRAIN CURRENT(AMPS)
												DRAIN CURRENT(AMPS)
UNITY	1000											,
	1000											D		TC = 25°C
												D
,												I
T												I
f
	0											0
	0	2	4	6	8	10	12	14	16	18	20	0	10	100

ID, DRAIN CURRENT (AMPS)	ID, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain	Figure 4. DC Safe Operating Area
Frequency versus Drain Current

MOTOROLA RF DEVICE DATA	MRF175LU MRF175LV
	3

					TYPICAL CHARACTERISTICS
	5					(NORMALIZED)	1.2
(AMPS)	4											VDD = 28 V
	4			VDS = 10 V			1.1
				VDS = 10 V			1.1
CURRENT	3					VOLTAGE					ID = 4 A
							1				ID = 4 A	3 A
												3 A


, DRAIN	2					-SOURCE						2 A
												2 A
		TYPICAL DEVICE SHOWN, VGS(th) = 3 V
D		TYPICAL DEVICE SHOWN, VGS(th) = 3 V					0.9
I	1					GATE						100 mA
												100 mA

						,
						GS
	0					V	0.8
	0						0.8
	1	2	3	4	5	6	± 25	0	25	50	75	100	125	150	175
		VGS, GATE±SOURCE VOLTAGE (VOLTS)								TC, CASE TEMPERATURE (°C)

Figure 5. Drain Current versus Gate Voltage	Figure 6. Gate±Source Voltage versus
(Transfer Characteristics)	Case Temperature

	1000
					VGS = 0 V
	500				f = 1 MHz
	500		Coss
(pF)			Coss
(pF)	200
CAPACITANCE	200		Ciss
			Ciss
	100
	50		Crss
C,	50
C,
			oss
	20
	0
	0	5	10	15	20	25

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance versus Drain±Source Voltage

MRF175LU MRF175LV	MOTOROLA RF DEVICE DATA
4

TYPICAL CHARACTERISTICS

MRF175LV

MRF175LU

Pout , OUTPUT POWER (WATTS)

160

140

120

100

Pin = 6 W

4 W

2 W

f = 225 MHz

IDQ = 100 mA

Pout , OUTPUT POWER (WATTS)

160

140

120

100

Pin = 14 W

10 W

6 W

IDQ = 100 mA

f = 400 MHz

12	16	20	24	28	12	14	16	18	20	22	24	26	28
	VDD, SUPPLY VOLTAGE (VOLTS)							SUPPLY VOLTAGE (VOLTS)
	Figure 8. Output Power versus Supply Voltage					Figure 9. Output Power versus Supply Voltage

POWER GAIN (dB)

30								160
							(WATTS)	140						f = 225 MHz
25							(WATTS)	120
25

20							POWER	100							400 MHz
							POWER


							OUTPUT,	80
15							OUTPUT,	60
15

10	VDS = 28 V						out	40							VDD = 28 V
	I	= 100 mA					out
	I	= 100 mA					P
	DQ							20							IDQ = 100 mA
	P	= 100 W						20
	P	= 100 W
	out
5								0
5	10	20	50	100	200	500		0	2	4	6	8	10	12	14	16	18	20

f, FREQUENCY (MHz)	Pin, INPUT POWER (WATTS)
	Pin, INPUT POWER (WATTS)
Figure 10. Power Gain versus Frequency	Figure 11. Output Power versus Input Power

MOTOROLA RF DEVICE DATA	MRF175LU MRF175LV
	5

Источник: https://studfile.net/preview/16503441/

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