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®

OPT202

 

FPO

PHOTODIODE

WITH ON-CHIP AMPLIFIER

FEATURES

●BANDWIDTH: 50kHz

●PHOTODIODE SIZE: 0.090 x 0.090 inch (2.29 x 2.29mm)

●1MΩ FEEDBACK RESISTOR

●HIGH RESPONSIVITY: 0.45A/W (650nm)

●LOW DARK ERRORS: 2mV

●WIDE SUPPLY RANGE: ±2.25 to ±18V

●LOW QUIESCENT CURRENT: 400μA

●TRANSPARENT 8-PIN DIP AND 5-PIN SIP

●HERMETIC 8-PIN CERAMIC DIP

APPLICATIONS

●MEDICAL INSTRUMENTATION

●LABORATORY INSTRUMENTATION

●POSITION AND PROXIMITY SENSORS

●PHOTOGRAPHIC ANALYZERS

●SMOKE DETECTORS

2

(Pin available on DIP only)

 

 

 

 

 

 

1MΩ

 

4

(4)

 

 

 

 

 

 

 

 

 

3pF

 

 

 

λ

 

 

 

 

175Ω

5

 

 

 

 

 

 

VO

 

 

 

 

 

(5)

 

 

 

 

 

 

 

 

 

 

 

OPT202

 

 

(1)

8

(2)

1

(3)

3

 

 

 

 

 

V+

V–

 

 

 

 

 

 

(SIP)

DIP

 

 

DESCRIPTION

The OPT202 is an opto-electronic integrated circuit containing a photodiode and transimpedance amplifier on a single dielectrically isolated chip. The transimpedance amplifier consists of a precision FETinput op amp and an on-chip metal film resistor. The 0.09 x 0.09 inch photodiode is operated at zero bias for excellent linearity and low dark current.

The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs such as leakage current errors, noise pick-up and gain peaking due to stray capacitance.

The OPT202 operates over a wide supply range (±2.25 to ±18V) and supply current is only 400μA. It is

packaged in a transparent plastic 8-pin DIP or 5-pin SIP, specified for the 0°C to +70°C temperature range

as well as a hermetic ceramic 8-pin DIP with a glass window, specified for the –40°C to +85°C tempera-

ture range.

SPECTRAL RESPONSIVITY

 

 

Ultraviolet

 

Blue

Green

Yellow

Red

 

Infrared

Responsivity (A/W)

 

0.5

 

 

 

 

 

0.5

 

 

 

 

 

 

 

Output (V/µW)

0.4

 

Using Internal

 

 

0.4

 

1MΩ Resistor

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

Voltage

0.2

 

 

 

 

 

 

 

 

 

0.2

Photodiode

0.1

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

0

 

 

100

200

300

400

500

600

700

800

900

1000 1100

 

Wavelength (nm)

International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132

®

PDS-1200E

OPT202

1

SPECIFICATIONS

ELECTRICAL

At TA = +25°C, VS = ±15V, λ = 650nm, internal 1MΩ feedback resistor, unless otherwise noted.

 

 

 

 

 

 

 

OPT202P, W, G

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

CONDITIONS

MIN

TYP

MAX

 

UNITS

RESPONSIVITY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Photodiode Current

650nm

 

0.45

 

 

A/W

Voltage Output

650nm

 

0.45

 

 

V/μW

vs Temperature

 

 

 

 

 

100

 

 

ppm/°C

Unit-to-Unit Variation

650nm

 

±5

 

%

Nonlinearity(1)

FS Output = 10V

 

0.01

 

 

% of FS

Photodiode Area

(0.090 x 0.090in)

 

0.008

 

 

in2

 

 

(2.29 x 2.29mm)

 

5.2

 

 

mm2

 

 

 

 

 

 

 

 

 

 

DARK ERRORS, RTO(2)

 

 

 

 

 

±0.5

±2

 

 

Offset Voltage, Output: P, W Packages

 

 

 

 

 

 

mV

 

G Package

 

 

 

 

 

±0.5

±3

 

mV

vs Temperature

 

 

 

 

 

±10

 

 

μV/°C

vs Power Supply

VS = ±2.25V to ±18V

 

10

100

 

μV/V

Voltage Noise

Measured BW = 0.1Hz to 100kHz

 

1

 

 

mVrms

 

 

 

 

 

 

 

 

 

 

RESISTOR—1M Ω Internal

 

 

 

 

 

 

 

 

MΩ

Resistance

 

 

 

 

 

 

1

 

 

Tolerance: P, G Packages

 

 

 

 

 

±0.5

±2

%

 

W Package

 

 

 

 

 

±0.5

 

%

vs Temperature

 

 

 

 

 

50

 

 

ppm/°C

 

 

 

 

 

 

 

 

 

 

FREQUENCY RESPONSE

 

 

 

 

 

 

 

 

 

Bandwidth, Large or Small-Signal, –3dB

 

 

 

 

 

50

 

 

kHz

Rise Time, 10% to 90%

 

 

 

 

 

10

 

 

μs

Settling Time, 1%

FS to Dark

 

10

 

 

μs

 

0.1%

FS to Dark

 

20

 

 

μs

 

0.01%

FS to Dark

 

40

 

 

μs

Overload Recovery Time (to 1%)

100% Overdrive, VS = ±15V

 

44

 

 

μs

 

 

100% Overdrive, VS = ±5V

 

100

 

 

μs

 

 

100% Overdrive, VS = ±2.25V

 

240

 

 

μs

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

RL = 10kΩ

 

 

 

 

 

Voltage Output

(V+) – 1.25

(V+) – 1

 

 

V

 

 

RL = 5kΩ

(V+) – 2

(V+) – 1.5

 

 

V

Capacitive Load, Stable Operation

 

 

 

 

 

10

 

 

nF

Short-Circuit Current

 

 

 

 

 

±18

 

 

mA

 

 

 

 

 

 

 

 

 

 

POWER SUPPLY

 

 

 

 

 

±15

 

 

 

Specified Operating Voltage

 

 

 

 

±2.25

±18

 

V

Operating Voltage Range

 

 

 

 

 

 

V

Quiescent Current

VO = 0

 

±400

±500

 

μA

 

 

 

 

 

 

 

 

 

 

TEMPERATURE RANGE

 

 

 

 

 

 

 

 

°C

Specification; P, W Packages

 

 

 

 

0

 

+70

 

 

G Package

 

 

 

 

–40

 

+85

 

°C

Operating,

P, W Packages

 

 

 

 

0

 

+70

 

°C

 

G Package

 

 

 

 

–55

 

+125

 

°C

Storage

P, W Packages

 

 

 

 

–25

 

+85

 

°C

 

G Package

 

 

 

 

–55

 

+125

 

°C

Thermal Resistance, θJA

 

 

 

 

 

100

 

 

°C/W

 

 

 

 

 

 

 

 

 

 

 

NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.

®

 

OPT202

2

 

SPECIFICATIONS (CONT)

ELECTRICAL

 

Op Amp Section of OPT202(1)

 

 

 

 

 

 

At TA = +25°C, VS = ±15V, unless otherwise noted.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OPT202 Op Amp

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

CONDITIONS

MIN

 

 

TYP

 

MAX

UNITS

INPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Offset Voltage

 

 

 

±0.5

 

 

 

mV

vs Temperature

 

 

 

±5

 

 

 

mV/°C

vs Power Supply

VS = ±2.25V to ±18V

 

 

10

 

 

 

mV/V

Input Bias Current

 

 

 

1

 

 

 

pA

vs Temperature

 

 

 

doubles every 10°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOISE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Voltage Noise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Voltage Noise Density, f = 10Hz

 

 

 

 

30

 

 

 

nV/Ö

Hz

 

 

f = 100Hz

 

 

 

 

25

 

 

 

nV/Ö

Hz

 

f = 1kHz

 

 

 

 

15

 

 

 

nV/Ö

Hz

 

Current Noise Density, f = 1kHz

 

 

 

 

0.8

 

 

 

fA/Ö

Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INPUT VOLTAGE RANGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common-Mode Input Range

 

 

 

±14.4

 

 

 

V

Common-Mode Rejection

 

 

 

106

 

 

 

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

INPUT IMPEDANCE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Differential

 

 

 

1012||3

 

 

 

W || pF

Common-Mode

 

 

 

1012||3

 

 

 

W || pF

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OPEN-LOOP GAIN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Open-Loop Voltage Gain

 

 

 

120

 

 

 

dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FREQUENCY RESPONSE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain-Bandwidth Product

 

 

 

16

 

 

 

MHz

Slew Rate

 

 

 

6

 

 

 

V/ms

Settling Time 0.1%

 

 

 

4

 

 

 

ms

0.01%

 

 

 

5

 

 

 

ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Voltage Output

RL = 10kW

(V+) – 1.25

 

 

(V+) – 1

 

 

V

 

RL = 5kW

(V+) – 2

 

 

(V+) – 1.5

 

 

V

Short-Circuit Current

 

 

 

±18

 

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER SUPPLY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Specified Operating Voltage

 

 

 

±15

 

 

 

V

Operating Voltage Range

 

±2.25

 

 

 

 

 

±18

V

Quiescent Current

IO = 0

 

 

±400

 

 

±500

mA

NOTE: (1) Op amp specifications provided for information and comparison only.

PHOTODIODE SPECIFICATIONS

At TA = +25°C, unless otherwise noted.

 

 

 

 

Photodiode of OPT202

 

 

 

 

 

 

 

 

 

 

PARAMETER

CONDITIONS

MIN

TYP

 

MAX

UNITS

 

 

 

 

 

 

 

in2

Photodiode Area

(0.090 x 0.090in)

 

0.008

 

 

 

(2.29 x 2.29mm)

 

5.2

 

 

mm2

Current Responsivity

650nm

 

0.45

 

 

A/W

Dark Current

VD = 0V(1)

 

500

 

 

fA

vs Temperature

 

 

 

doubles every 10°C

 

 

 

Capacitance

VD = 0V(1)

 

600

 

 

pF

NOTE: (1) Voltage Across Photodiode.

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems.

®

3

OPT202

 

 

PIN CONFIGURATIONS

Top View

 

 

 

 

DIP

 

 

 

 

 

 

V+

1

 

8

Common

 

 

 

 

 

 

 

 

 

 

 

 

–In

2

(1)

7

NC

 

 

 

 

 

 

 

 

 

 

V–

3

 

6

NC

1MΩ Feedback

 

 

 

 

 

 

 

 

 

 

4

 

5

Output

 

 

 

 

 

 

 

 

 

 

NOTE: (1) Photodiode location.

 

 

 

 

 

 

Top View

 

 

 

 

SIP

 

 

 

 

 

 

Common

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V+

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V–

 

3

(1)

 

 

1MΩ Feedback

 

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ABSOLUTE MAXIMUM RATINGS

Supply Voltage ...................................................................................

 

±18V

Input Voltage Range (Common Pin)

.................................................... ±VS

Output Short-Circuit (to ground) ...............................................

Continuous

Operating Temperature: P, W ...........................................

–25 ° C to +85°C

 

G .............................................

–55 ° C to +125°C

Storage Temperature:

P, W ...........................................

–25 ° C to +85°C

 

G .............................................

–55 ° C to +125°C

Junction Temperature:

P, W ..........................................................

+85°C

 

G .............................................................

+150°C

Lead Temperature (soldering, 10s) ................................................

+300°C

(Vapor-Phase Soldering Not Recommended on Plastic Packages)

PACKAGE INFORMATION

 

 

PACKAGE DRAWING

PRODUCT

PACKAGE

NUMBER(1)

OPT202P

8-Pin Plastic DIP

006-1

OPT202W

5-Pin Plastic SIP

321

OPT202G

8-Pin Ceramic DIP

161-1

 

 

 

NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.

ELECTROSTATIC DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

MOISTURE SENSITIVITY AND SOLDERING

Clear plastic does not contain the structural-enhancing fillers used in black plastic molding compound. As a result, clear plastic is more sensitive to environmental stress than black plastic. This can cause difficulties if devices have been stored in high humidity prior to soldering. The rapid heating during soldering can stress wire bonds and cause failures. Prior to

soldering, it is recommended that plastic devices be baked-out at 85°C for 24 hours.

The fire-retardant fillers used in black plastic are not compatible with clear molding compound. The OPT202 plastic packages cannot meet flammability test, UL-94.

®

 

OPT202

4

 

TYPICAL PERFORMANCE CURVES

At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.

NORMALIZED SPECTRAL RESPONSIVITY

Output

1.0

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

(0.48A/W)

 

 

 

 

 

 

 

 

 

Voltage

 

 

 

 

 

650nm

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(0.45A/W)

 

 

0.6

 

 

 

 

 

 

 

 

 

or

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Normalized

0.2

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

200

300

400

500

600

700

800

900

1000 1100

 

 

 

 

 

Wavelength (nm)

 

 

 

VOLTAGE RESPONSIVITY vs IRRADIANCE

 

10

 

 

 

 

 

 

 

 

 

(V)

1

 

Ω

 

 

 

 

 

 

 

=

10M

 

 

 

 

 

 

Voltage

 

 

 

 

 

 

 

R

F

 

 

Ω

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

=

1M

 

Ω

 

 

 

 

 

 

 

 

 

 

 

 

R

F

 

 

 

 

 

Output

 

 

 

 

 

 

 

 

 

 

 

 

100k

 

 

 

 

 

 

 

 

=

 

 

 

0.01

 

 

 

R

F

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

λ = 650nm

 

 

 

 

 

 

 

 

 

 

 

 

0.001

 

 

 

 

 

 

 

 

 

 

0.001

0.01

 

 

 

0.1

1

10

100

 

 

 

 

 

 

Irradiance (W/m2)

 

 

VOLTAGE RESPONSIVITY vs RADIANT POWER

 

10

 

 

 

 

 

 

 

 

 

 

 

1

 

 

Ω

 

 

 

 

 

 

(V)

 

 

10M

 

 

 

 

 

 

 

 

 

=

 

 

 

 

 

 

 

Voltage

 

R

F

 

 

Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

=

1M

Ω

 

 

 

 

 

R

F

 

 

 

 

 

Output

 

 

 

 

 

 

100k

 

 

 

 

 

 

 

 

 

=

 

 

 

 

 

 

 

 

R

F

 

λ = 650nm

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.001

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

0.1

 

 

1

10

100

1k

 

 

 

 

 

 

 

 

Radiant Power (µW)

 

 

VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY

 

10

RF

= 10MΩ

 

 

 

 

 

 

λ = 650nm

 

 

 

RF = 3.3MΩ

 

 

 

 

 

 

 

(V/µW)

1

 

 

RF = 1MΩ

 

 

 

 

 

 

 

 

Responsivity

0.1

RF = 330kΩ CEXT = 3pF

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

0.001

 

 

 

 

 

 

100

1k

10k

100k

1M

10M

 

 

 

Frequency (Hz)

 

 

RESPONSE vs INCIDENT ANGLE

 

1.0

 

 

 

 

 

 

0.8

θX

SIP Package

θY

 

θX

 

θY

 

Response

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

Relative

0.4

θX

Plastic

θY

 

 

DIP Package

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

0

 

 

 

 

 

 

 

0

±20

 

±40

±60

 

 

 

 

Incident Angle (°)

 

 

 

 

 

RESPONSE vs INCIDENT ANGLE

 

 

1.0

 

1.00

 

 

 

 

 

 

 

 

 

 

 

0.90

 

 

 

 

 

 

 

 

 

0.8

 

0.80

 

 

 

 

 

 

 

 

 

 

Output

0.70

 

 

 

 

θX and θY

 

 

 

0.6

0.60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Relative

0.50

θX

 

 

θY

 

 

 

 

 

0.4

0.40

Ceramic

 

 

 

 

 

 

 

 

 

 

 

 

DIP Package

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.30

 

 

 

 

 

 

 

 

 

0.2

 

02.0

 

 

 

 

 

 

 

 

 

 

 

0.10

 

 

 

 

 

 

 

 

 

0

 

0

 

 

 

 

 

 

 

 

 

±80

 

0

10

20

30

40

50

60

70

80

90

 

 

 

 

 

Angle of Incidence

 

 

 

®

5

OPT202

 

 

Источник: https://studfile.net/preview/16502785/